JP7575309B2 - 膜厚測定方法、ノッチ部の検出方法、および研磨装置 - Google Patents

膜厚測定方法、ノッチ部の検出方法、および研磨装置 Download PDF

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Publication number
JP7575309B2
JP7575309B2 JP2021043328A JP2021043328A JP7575309B2 JP 7575309 B2 JP7575309 B2 JP 7575309B2 JP 2021043328 A JP2021043328 A JP 2021043328A JP 2021043328 A JP2021043328 A JP 2021043328A JP 7575309 B2 JP7575309 B2 JP 7575309B2
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Japan
Prior art keywords
film thickness
polishing
substrate
polishing head
head
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JP2021043328A
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English (en)
Japanese (ja)
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JP2022143015A (ja
JP2022143015A5 (enExample
Inventor
治 鍋谷
真吾 富樫
計介 並木
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Ebara Corp
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Ebara Corp
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Publication date
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Priority to JP2021043328A priority Critical patent/JP7575309B2/ja
Priority to US17/694,125 priority patent/US12183642B2/en
Publication of JP2022143015A publication Critical patent/JP2022143015A/ja
Publication of JP2022143015A5 publication Critical patent/JP2022143015A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2021043328A 2021-03-17 2021-03-17 膜厚測定方法、ノッチ部の検出方法、および研磨装置 Active JP7575309B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021043328A JP7575309B2 (ja) 2021-03-17 2021-03-17 膜厚測定方法、ノッチ部の検出方法、および研磨装置
US17/694,125 US12183642B2 (en) 2021-03-17 2022-03-14 Film-thickness measuring method, method of detecting notch portion, and polishing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021043328A JP7575309B2 (ja) 2021-03-17 2021-03-17 膜厚測定方法、ノッチ部の検出方法、および研磨装置

Publications (3)

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JP2022143015A JP2022143015A (ja) 2022-10-03
JP2022143015A5 JP2022143015A5 (enExample) 2023-10-24
JP7575309B2 true JP7575309B2 (ja) 2024-10-29

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US (1) US12183642B2 (enExample)
JP (1) JP7575309B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7425411B2 (ja) * 2020-10-12 2024-01-31 株式会社Sumco キャリア測定装置、キャリア測定方法、及びキャリア管理方法
US20220395956A1 (en) * 2021-06-15 2022-12-15 Axus Technology, Llc Method and apparatus for in-situ monitoring of chemical mechanical planarization (cmp) processes

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168663A (ja) 2001-12-03 2003-06-13 Sumitomo Mitsubishi Silicon Corp ワックスレスマウント式研磨方法およびその装置
US20120164917A1 (en) 2010-12-27 2012-06-28 Itsuki Kobata Polishing apparatus and polishing method
JP2015020242A (ja) 2013-07-19 2015-02-02 株式会社荏原製作所 研磨装置および研磨状態監視方法
JP2018183820A (ja) 2017-04-24 2018-11-22 株式会社荏原製作所 基板の研磨装置
US20190134774A1 (en) 2017-11-06 2019-05-09 Ebara Corporation Polishing method and polishing apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4159558B2 (ja) 1995-10-09 2008-10-01 株式会社荏原製作所 ポリッシング装置
JPH1076464A (ja) * 1996-08-30 1998-03-24 Canon Inc 研磨方法及びそれを用いた研磨装置
TWI375294B (en) * 2003-02-10 2012-10-21 Ebara Corp Elastic membrane
TWI635929B (zh) * 2013-07-11 2018-09-21 日商荏原製作所股份有限公司 研磨裝置及研磨狀態監視方法
JP6266493B2 (ja) 2014-03-20 2018-01-24 株式会社荏原製作所 研磨装置及び研磨方法
JP2015217445A (ja) 2014-05-14 2015-12-07 株式会社荏原製作所 研磨装置
JP6795337B2 (ja) * 2016-06-29 2020-12-02 株式会社荏原製作所 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
JP7178259B2 (ja) 2018-12-27 2022-11-25 株式会社荏原製作所 研磨装置および研磨方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168663A (ja) 2001-12-03 2003-06-13 Sumitomo Mitsubishi Silicon Corp ワックスレスマウント式研磨方法およびその装置
US20120164917A1 (en) 2010-12-27 2012-06-28 Itsuki Kobata Polishing apparatus and polishing method
JP2012138442A (ja) 2010-12-27 2012-07-19 Ebara Corp ポリッシング装置およびポリッシング方法
JP2015020242A (ja) 2013-07-19 2015-02-02 株式会社荏原製作所 研磨装置および研磨状態監視方法
JP2018183820A (ja) 2017-04-24 2018-11-22 株式会社荏原製作所 基板の研磨装置
US20200130131A1 (en) 2017-04-24 2020-04-30 Ebara Corporation Polishing apparatus of substrate
US20190134774A1 (en) 2017-11-06 2019-05-09 Ebara Corporation Polishing method and polishing apparatus
JP2019084614A (ja) 2017-11-06 2019-06-06 株式会社荏原製作所 研磨方法および研磨装置

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US20220344221A1 (en) 2022-10-27
JP2022143015A (ja) 2022-10-03
US12183642B2 (en) 2024-12-31

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