JP7569527B2 - 積層体、単結晶ダイヤモンド基板及びその製造方法 - Google Patents

積層体、単結晶ダイヤモンド基板及びその製造方法 Download PDF

Info

Publication number
JP7569527B2
JP7569527B2 JP2020143009A JP2020143009A JP7569527B2 JP 7569527 B2 JP7569527 B2 JP 7569527B2 JP 2020143009 A JP2020143009 A JP 2020143009A JP 2020143009 A JP2020143009 A JP 2020143009A JP 7569527 B2 JP7569527 B2 JP 7569527B2
Authority
JP
Japan
Prior art keywords
film
diamond
ruthenium
single crystal
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020143009A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022038478A5 (enExample
JP2022038478A (ja
Inventor
洋 川原田
文茜 費
葵 森下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Waseda University
Original Assignee
Waseda University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Waseda University filed Critical Waseda University
Priority to JP2020143009A priority Critical patent/JP7569527B2/ja
Priority to US18/042,725 priority patent/US12378691B2/en
Priority to PCT/JP2021/030346 priority patent/WO2022044946A1/ja
Priority to TW110131420A priority patent/TWI905253B/zh
Publication of JP2022038478A publication Critical patent/JP2022038478A/ja
Publication of JP2022038478A5 publication Critical patent/JP2022038478A5/ja
Application granted granted Critical
Publication of JP7569527B2 publication Critical patent/JP7569527B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/06—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of natural rubber or synthetic rubber
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laminated Bodies (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP2020143009A 2020-08-26 2020-08-26 積層体、単結晶ダイヤモンド基板及びその製造方法 Active JP7569527B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020143009A JP7569527B2 (ja) 2020-08-26 2020-08-26 積層体、単結晶ダイヤモンド基板及びその製造方法
US18/042,725 US12378691B2 (en) 2020-08-26 2021-08-19 Laminate, single crystal diamond substrate and method of producing same
PCT/JP2021/030346 WO2022044946A1 (ja) 2020-08-26 2021-08-19 積層体、単結晶ダイヤモンド基板及びその製造方法
TW110131420A TWI905253B (zh) 2020-08-26 2021-08-25 積層體、單晶鑽石基板及其製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020143009A JP7569527B2 (ja) 2020-08-26 2020-08-26 積層体、単結晶ダイヤモンド基板及びその製造方法

Publications (3)

Publication Number Publication Date
JP2022038478A JP2022038478A (ja) 2022-03-10
JP2022038478A5 JP2022038478A5 (enExample) 2023-07-28
JP7569527B2 true JP7569527B2 (ja) 2024-10-18

Family

ID=80355162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020143009A Active JP7569527B2 (ja) 2020-08-26 2020-08-26 積層体、単結晶ダイヤモンド基板及びその製造方法

Country Status (4)

Country Link
US (1) US12378691B2 (enExample)
JP (1) JP7569527B2 (enExample)
TW (1) TWI905253B (enExample)
WO (1) WO2022044946A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20260132542A1 (en) * 2024-06-03 2026-05-14 Tech University Of Korea Industry Academic Cooperation Foundation Single-crystal diamond substrate with twin defects removed and method for manufacturing the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005219962A (ja) 2004-02-05 2005-08-18 Sumitomo Electric Ind Ltd ダイヤモンド単結晶基板及びその製造方法
US20070084398A1 (en) 2003-05-06 2007-04-19 Universitat Augsburg Monocrystalline diamond layer and method for the production thereof
US20160208413A1 (en) 2015-01-19 2016-07-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Epitaxial diamond layer and method for the production thereof
JP2016145144A (ja) 2015-01-28 2016-08-12 パナソニックＩｐマネジメント株式会社 ダイヤモンド積層構造、ダイヤモンド半導体形成用基板、ダイヤモンド半導体装置およびダイヤモンド積層構造の製造方法
JP2020090408A (ja) 2018-12-04 2020-06-11 信越化学工業株式会社 積層基板、自立基板、積層基板の製造方法及び自立基板の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06212428A (ja) * 1993-01-20 1994-08-02 Matsufumi Takatani 金属表面へのダイヤモンド被覆の形成方法
US6201342B1 (en) * 1997-06-30 2001-03-13 The United States Of America As Represented By The Secretary Of The Navy Automatically sharp field emission cathodes
TW522504B (en) * 2001-02-15 2003-03-01 Ngk Insulators Ltd Diamond-coated member
EP2801551A1 (en) * 2013-05-08 2014-11-12 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Graphene with very high charge carrier mobility and preparation thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070084398A1 (en) 2003-05-06 2007-04-19 Universitat Augsburg Monocrystalline diamond layer and method for the production thereof
JP2005219962A (ja) 2004-02-05 2005-08-18 Sumitomo Electric Ind Ltd ダイヤモンド単結晶基板及びその製造方法
US20160208413A1 (en) 2015-01-19 2016-07-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Epitaxial diamond layer and method for the production thereof
JP2016145144A (ja) 2015-01-28 2016-08-12 パナソニックＩｐマネジメント株式会社 ダイヤモンド積層構造、ダイヤモンド半導体形成用基板、ダイヤモンド半導体装置およびダイヤモンド積層構造の製造方法
JP2020090408A (ja) 2018-12-04 2020-06-11 信越化学工業株式会社 積層基板、自立基板、積層基板の製造方法及び自立基板の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FEI, Wenxi et al.，Local initial heteroepitaxial growth of diamond(111) on Ru(0001)/c-sapphire by antenna-edge-type mic，Applied Physics Letters，2020年09月18日，Volume 117, Issue 11

Also Published As

Publication number Publication date
US20230349070A1 (en) 2023-11-02
TWI905253B (zh) 2025-11-21
US12378691B2 (en) 2025-08-05
TW202219301A (zh) 2022-05-16
JP2022038478A (ja) 2022-03-10
WO2022044946A1 (ja) 2022-03-03

Similar Documents

Publication Publication Date Title
US9200379B2 (en) Base material for growing single crystal diamond and method for producing single crystal diamond substrate
US20130220214A1 (en) Base material for growing single crystal diamond and method for producing single crystal diamond substrate
JP7078947B2 (ja) ダイヤモンド製膜用下地基板及びそれを用いたダイヤモンド基板の製造方法
JP5468528B2 (ja) 単結晶ダイヤモンド成長用基材及びその製造方法並びに単結晶ダイヤモンド基板の製造方法
JP6112485B2 (ja) 単結晶ダイヤモンドの製造方法
CN103456603B (zh) 在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜
JPH11147794A (ja) 単結晶ＳｉＣ及びその製造方法
JP2021166293A (ja) ダイヤモンド電子素子及びダイヤモンド電子素子の製造方法
US12378691B2 (en) Laminate, single crystal diamond substrate and method of producing same
JP2025175289A (ja) 下地基板及び単結晶ダイヤモンド積層基板並びにそれらの製造方法
JP7298832B2 (ja) ダイヤモンド製膜用下地基板及びそれを用いたダイヤモンド基板の製造方法
US20250154685A1 (en) Underlying substrate, single crystal diamond laminate substrate and method for producing them
JP7157953B2 (ja) 窒化物系薄膜複合構造体及びその製造方法
US20260068551A1 (en) Underlying substrate, single crystal diamond laminate substrate and method for producing them
JP2017226573A (ja) 積層基板の製造方法および積層基板
JP2026084013A (ja) 単結晶ダイヤモンド積層基板用の下地基板及びその製造方法、並びに単結晶ダイヤモンド基板の製造方法
JPH09309795A (ja) 立方晶窒化アルミニウム薄膜およびその合成方法
TW202528572A (zh) 鑽石基板及其製造方法以及感測器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230720

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230720

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240910

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240927

R150 Certificate of patent or registration of utility model

Ref document number: 7569527

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150