TWI905253B - 積層體、單晶鑽石基板及其製造方法 - Google Patents

積層體、單晶鑽石基板及其製造方法

Info

Publication number
TWI905253B
TWI905253B TW110131420A TW110131420A TWI905253B TW I905253 B TWI905253 B TW I905253B TW 110131420 A TW110131420 A TW 110131420A TW 110131420 A TW110131420 A TW 110131420A TW I905253 B TWI905253 B TW I905253B
Authority
TW
Taiwan
Prior art keywords
film
diamond
ruthenium
crystal
ruthenium film
Prior art date
Application number
TW110131420A
Other languages
English (en)
Chinese (zh)
Other versions
TW202219301A (zh
Inventor
川原田洋
費文茜
森下葵
Original Assignee
學校法人早稻田大學
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 學校法人早稻田大學 filed Critical 學校法人早稻田大學
Publication of TW202219301A publication Critical patent/TW202219301A/zh
Application granted granted Critical
Publication of TWI905253B publication Critical patent/TWI905253B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/06—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of natural rubber or synthetic rubber
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laminated Bodies (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
TW110131420A 2020-08-26 2021-08-25 積層體、單晶鑽石基板及其製造方法 TWI905253B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-143009 2020-08-26
JP2020143009A JP7569527B2 (ja) 2020-08-26 2020-08-26 積層体、単結晶ダイヤモンド基板及びその製造方法

Publications (2)

Publication Number Publication Date
TW202219301A TW202219301A (zh) 2022-05-16
TWI905253B true TWI905253B (zh) 2025-11-21

Family

ID=80355162

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110131420A TWI905253B (zh) 2020-08-26 2021-08-25 積層體、單晶鑽石基板及其製造方法

Country Status (4)

Country Link
US (1) US12378691B2 (enExample)
JP (1) JP7569527B2 (enExample)
TW (1) TWI905253B (enExample)
WO (1) WO2022044946A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20260132542A1 (en) * 2024-06-03 2026-05-14 Tech University Of Korea Industry Academic Cooperation Foundation Single-crystal diamond substrate with twin defects removed and method for manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06212428A (ja) * 1993-01-20 1994-08-02 Matsufumi Takatani 金属表面へのダイヤモンド被覆の形成方法
TW522504B (en) * 2001-02-15 2003-03-01 Ngk Insulators Ltd Diamond-coated member
CN111270307A (zh) * 2018-12-04 2020-06-12 信越化学工业株式会社 层叠基板、自支撑基板、层叠基板的制造方法及自支撑基板的制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6201342B1 (en) * 1997-06-30 2001-03-13 The United States Of America As Represented By The Secretary Of The Navy Automatically sharp field emission cathodes
DE10320133B4 (de) * 2003-05-06 2011-02-10 Universität Augsburg Verfahren zur Herstellung von einkristallinen oder quasi-einkristallinen Diamantschichten und auf einem Körper angeordnete einkristalline oder quasi-einkristalline Diamantschicht
JP2005219962A (ja) * 2004-02-05 2005-08-18 Sumitomo Electric Ind Ltd ダイヤモンド単結晶基板及びその製造方法
EP2801551A1 (en) * 2013-05-08 2014-11-12 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Graphene with very high charge carrier mobility and preparation thereof
DE102015200692B4 (de) * 2015-01-19 2018-10-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Epitaktische Diamantschicht und Verfahren zu ihrer Herstellung
US20160218183A1 (en) * 2015-01-28 2016-07-28 Panasonic Intellectual Property Management Co., Ltd. Diamond multilayer structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06212428A (ja) * 1993-01-20 1994-08-02 Matsufumi Takatani 金属表面へのダイヤモンド被覆の形成方法
TW522504B (en) * 2001-02-15 2003-03-01 Ngk Insulators Ltd Diamond-coated member
CN111270307A (zh) * 2018-12-04 2020-06-12 信越化学工业株式会社 层叠基板、自支撑基板、层叠基板的制造方法及自支撑基板的制造方法

Also Published As

Publication number Publication date
US20230349070A1 (en) 2023-11-02
US12378691B2 (en) 2025-08-05
TW202219301A (zh) 2022-05-16
JP7569527B2 (ja) 2024-10-18
JP2022038478A (ja) 2022-03-10
WO2022044946A1 (ja) 2022-03-03

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