JP7562054B1 - 電磁波検出器及び電磁波検出器アレイ - Google Patents

電磁波検出器及び電磁波検出器アレイ Download PDF

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JP7562054B1
JP7562054B1 JP2024543362A JP2024543362A JP7562054B1 JP 7562054 B1 JP7562054 B1 JP 7562054B1 JP 2024543362 A JP2024543362 A JP 2024543362A JP 2024543362 A JP2024543362 A JP 2024543362A JP 7562054 B1 JP7562054 B1 JP 7562054B1
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semiconductor layer
electromagnetic wave
dimensional material
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material layer
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JPWO2025134255A5 (https=
JPWO2025134255A1 (https=
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学 岩川
昌一郎 福島
政彰 嶋谷
新平 小川
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Mitsubishi Electric Corp
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JP2024543362A 2023-12-20 2023-12-20 電磁波検出器及び電磁波検出器アレイ Active JP7562054B1 (ja)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120035233A (zh) * 2025-02-24 2025-05-23 中国科学院上海技术物理研究所 一种外尔半金属长波红外探测器及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170256667A1 (en) * 2016-03-02 2017-09-07 Gwangju Institute Of Science And Technology Graphene-semiconductor schottky junction photodetector of having tunable gain
WO2021002070A1 (ja) * 2019-07-04 2021-01-07 三菱電機株式会社 電磁波検出器
WO2021124609A1 (ja) * 2019-12-17 2021-06-24 三菱電機株式会社 電磁波検出器および電磁波検出器集合体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170256667A1 (en) * 2016-03-02 2017-09-07 Gwangju Institute Of Science And Technology Graphene-semiconductor schottky junction photodetector of having tunable gain
WO2021002070A1 (ja) * 2019-07-04 2021-01-07 三菱電機株式会社 電磁波検出器
WO2021124609A1 (ja) * 2019-12-17 2021-06-24 三菱電機株式会社 電磁波検出器および電磁波検出器集合体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120035233A (zh) * 2025-02-24 2025-05-23 中国科学院上海技术物理研究所 一种外尔半金属长波红外探测器及其制备方法

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