JP7559753B2 - 撮像素子、積層型撮像素子及び固体撮像装置、並びに、撮像素子の製造方法 - Google Patents

撮像素子、積層型撮像素子及び固体撮像装置、並びに、撮像素子の製造方法 Download PDF

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JP7559753B2
JP7559753B2 JP2021522736A JP2021522736A JP7559753B2 JP 7559753 B2 JP7559753 B2 JP 7559753B2 JP 2021522736 A JP2021522736 A JP 2021522736A JP 2021522736 A JP2021522736 A JP 2021522736A JP 7559753 B2 JP7559753 B2 JP 7559753B2
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electrode
semiconductor material
photoelectric conversion
inorganic semiconductor
imaging element
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JPWO2020241169A1 (https=
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博史 中野
俊貴 森脇
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Sony Corp
Sony Group Corp
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Sony Corp
Sony Group Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2021522736A 2019-05-24 2020-04-30 撮像素子、積層型撮像素子及び固体撮像装置、並びに、撮像素子の製造方法 Active JP7559753B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019097458 2019-05-24
JP2019097458 2019-05-24
PCT/JP2020/018226 WO2020241169A1 (ja) 2019-05-24 2020-04-30 撮像素子、積層型撮像素子及び固体撮像装置、並びに、撮像素子の製造方法

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JPWO2020241169A1 JPWO2020241169A1 (https=) 2020-12-03
JP7559753B2 true JP7559753B2 (ja) 2024-10-02

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US (1) US12171107B2 (https=)
EP (1) EP3979349A4 (https=)
JP (1) JP7559753B2 (https=)
CN (1) CN113728451B (https=)
WO (1) WO2020241169A1 (https=)

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WO2025052890A1 (ja) * 2023-09-04 2025-03-13 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

Citations (8)

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US20160037098A1 (en) 2014-07-31 2016-02-04 Samsung Electronics Co., Ltd. Image Sensors Including Semiconductor Channel Patterns
JP2016063165A (ja) 2014-09-19 2016-04-25 株式会社東芝 撮像素子及び固体撮像装置
JP2017108101A (ja) 2015-12-04 2017-06-15 キヤノン株式会社 撮像装置、および、撮像システム
WO2017150540A1 (en) 2016-03-01 2017-09-08 Sony Corporation Imaging element, stacked-type imaging element, solid-state imaging device, and driving method for solid-state imaging device
WO2018194051A1 (ja) 2017-04-21 2018-10-25 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
WO2019035252A1 (ja) 2017-08-16 2019-02-21 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
WO2019035254A1 (ja) 2017-08-16 2019-02-21 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
WO2019035270A1 (ja) 2017-08-16 2019-02-21 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置

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JP5118810B2 (ja) 2004-11-10 2013-01-16 キヤノン株式会社 電界効果型トランジスタ
JP2007227574A (ja) * 2006-02-22 2007-09-06 Fujifilm Corp 光電変換素子、固体撮像素子
JP2008177191A (ja) 2007-01-16 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
JP5509846B2 (ja) 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP6136663B2 (ja) * 2013-07-04 2017-05-31 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
CN106463563B (zh) * 2014-07-17 2019-05-10 索尼公司 光电转换元件及其制造方法、成像装置、光学传感器
JP2016072547A (ja) * 2014-10-01 2016-05-09 東レ株式会社 光電変換素子およびこれを用いたイメージセンサ
JP2017059655A (ja) * 2015-09-16 2017-03-23 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法
US10978514B2 (en) * 2015-10-06 2021-04-13 Sony Semiconductor Solutions Corporation Solid-state imaging device, and method of manufacturing solid-state imaging device
CN116744702A (zh) * 2016-07-20 2023-09-12 索尼公司 光检测元件和光检测装置
TWI803616B (zh) 2018-04-20 2023-06-01 日商索尼股份有限公司 攝像元件、積層型攝像元件及固體攝像裝置
KR102653048B1 (ko) * 2018-04-20 2024-04-01 소니그룹주식회사 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
TWI820114B (zh) * 2018-04-20 2023-11-01 日商索尼股份有限公司 攝像元件、積層型攝像元件及固體攝像裝置
JP7256808B2 (ja) * 2018-07-30 2023-04-12 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160037098A1 (en) 2014-07-31 2016-02-04 Samsung Electronics Co., Ltd. Image Sensors Including Semiconductor Channel Patterns
JP2016063165A (ja) 2014-09-19 2016-04-25 株式会社東芝 撮像素子及び固体撮像装置
JP2017108101A (ja) 2015-12-04 2017-06-15 キヤノン株式会社 撮像装置、および、撮像システム
WO2017150540A1 (en) 2016-03-01 2017-09-08 Sony Corporation Imaging element, stacked-type imaging element, solid-state imaging device, and driving method for solid-state imaging device
WO2018194051A1 (ja) 2017-04-21 2018-10-25 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
WO2019035252A1 (ja) 2017-08-16 2019-02-21 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
WO2019035254A1 (ja) 2017-08-16 2019-02-21 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置
WO2019035270A1 (ja) 2017-08-16 2019-02-21 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置

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CN113728451B (zh) 2025-09-16
US12171107B2 (en) 2024-12-17
WO2020241169A1 (ja) 2020-12-03
EP3979349A4 (en) 2022-08-10
EP3979349A1 (en) 2022-04-06
US20220231085A1 (en) 2022-07-21
JPWO2020241169A1 (https=) 2020-12-03
CN113728451A (zh) 2021-11-30

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