JP7548743B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7548743B2
JP7548743B2 JP2020124231A JP2020124231A JP7548743B2 JP 7548743 B2 JP7548743 B2 JP 7548743B2 JP 2020124231 A JP2020124231 A JP 2020124231A JP 2020124231 A JP2020124231 A JP 2020124231A JP 7548743 B2 JP7548743 B2 JP 7548743B2
Authority
JP
Japan
Prior art keywords
substrate
layer
sealing resin
wiring
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020124231A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022020941A (ja
JP2022020941A5 (enExample
Inventor
啓 村山
光浩 相澤
周 金子
淳 大井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2020124231A priority Critical patent/JP7548743B2/ja
Priority to US17/376,478 priority patent/US11817381B2/en
Priority to EP21186343.6A priority patent/EP3944310A1/en
Publication of JP2022020941A publication Critical patent/JP2022020941A/ja
Publication of JP2022020941A5 publication Critical patent/JP2022020941A5/ja
Application granted granted Critical
Publication of JP7548743B2 publication Critical patent/JP7548743B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for individual devices of subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2020124231A 2020-07-21 2020-07-21 半導体装置 Active JP7548743B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2020124231A JP7548743B2 (ja) 2020-07-21 2020-07-21 半導体装置
US17/376,478 US11817381B2 (en) 2020-07-21 2021-07-15 Semiconductor device
EP21186343.6A EP3944310A1 (en) 2020-07-21 2021-07-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020124231A JP7548743B2 (ja) 2020-07-21 2020-07-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2022020941A JP2022020941A (ja) 2022-02-02
JP2022020941A5 JP2022020941A5 (enExample) 2023-06-08
JP7548743B2 true JP7548743B2 (ja) 2024-09-10

Family

ID=77358057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020124231A Active JP7548743B2 (ja) 2020-07-21 2020-07-21 半導体装置

Country Status (3)

Country Link
US (1) US11817381B2 (enExample)
EP (1) EP3944310A1 (enExample)
JP (1) JP7548743B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7760360B2 (ja) * 2021-12-23 2025-10-27 新光電気工業株式会社 半導体装置
DE102022128625A1 (de) * 2022-10-28 2024-05-08 Rolls-Royce Deutschland Ltd & Co Kg Elektrisches Modul und Verfahren zur Herstellung eines elektrischen Moduls
DE102023210595A1 (de) * 2023-10-26 2025-04-30 Robert Bosch Gesellschaft mit beschränkter Haftung Leistungsmodul mit einem Schaltungsträger
JP2025087205A (ja) * 2023-11-29 2025-06-10 新光電気工業株式会社 半導体装置
DE102024201721A1 (de) 2024-02-26 2025-08-28 Robert Bosch Gesellschaft mit beschränkter Haftung Leistungsmodul mit einem Trägersubstrat und einer elektrischen Isolationsschicht

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010103231A (ja) 2008-10-22 2010-05-06 Denso Corp 電子装置
JP2012191010A (ja) 2011-03-10 2012-10-04 Fuji Electric Co Ltd 半導体装置およびその製造方法
US20170064808A1 (en) 2015-09-02 2017-03-02 Stmicroelectronics S.R.L. Electronic power module with enhanced thermal dissipation and manufacturing method thereof
JP2018181959A (ja) 2017-04-06 2018-11-15 三菱電機株式会社 電力用半導体装置およびその製造方法、ならびに電力変換装置
JP2019083234A (ja) 2017-10-27 2019-05-30 新光電気工業株式会社 半導体装置及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8907477B2 (en) 2010-01-05 2014-12-09 Fuji Electric Co., Ltd. Unit for semiconductor device and semiconductor device
JP5387620B2 (ja) 2011-05-31 2014-01-15 株式会社安川電機 電力変換装置、半導体装置および電力変換装置の製造方法
JP5971263B2 (ja) 2012-02-09 2016-08-17 富士電機株式会社 半導体装置
WO2014115561A1 (ja) 2013-01-25 2014-07-31 富士電機株式会社 半導体装置
JP6369228B2 (ja) 2014-08-29 2018-08-08 富士電機株式会社 半導体装置
JP7021854B2 (ja) 2017-01-24 2022-02-17 ゼネラル・エレクトリック・カンパニイ 電力用電子回路パッケージおよびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010103231A (ja) 2008-10-22 2010-05-06 Denso Corp 電子装置
JP2012191010A (ja) 2011-03-10 2012-10-04 Fuji Electric Co Ltd 半導体装置およびその製造方法
US20170064808A1 (en) 2015-09-02 2017-03-02 Stmicroelectronics S.R.L. Electronic power module with enhanced thermal dissipation and manufacturing method thereof
JP2018181959A (ja) 2017-04-06 2018-11-15 三菱電機株式会社 電力用半導体装置およびその製造方法、ならびに電力変換装置
JP2019083234A (ja) 2017-10-27 2019-05-30 新光電気工業株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP2022020941A (ja) 2022-02-02
US11817381B2 (en) 2023-11-14
US20220028774A1 (en) 2022-01-27
EP3944310A1 (en) 2022-01-26

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