JP7527400B2 - オーバーレイ計測ツールおよび方法 - Google Patents

オーバーレイ計測ツールおよび方法 Download PDF

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Publication number
JP7527400B2
JP7527400B2 JP2022571783A JP2022571783A JP7527400B2 JP 7527400 B2 JP7527400 B2 JP 7527400B2 JP 2022571783 A JP2022571783 A JP 2022571783A JP 2022571783 A JP2022571783 A JP 2022571783A JP 7527400 B2 JP7527400 B2 JP 7527400B2
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Japan
Prior art keywords
overlay
illumination
pupil
overlay metrology
metrology tool
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JP2022571783A
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Japanese (ja)
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JP2023526864A (ja
JP2023526864A5 (https=
Inventor
アムノン マナッセン
アンドリュー ブイ ヒル
ジラド ラレド
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KLA Corp
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KLA Corp
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Publication of JP2023526864A5 publication Critical patent/JP2023526864A5/ja
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/26Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706843Metrology apparatus
    • G03F7/706849Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706843Metrology apparatus
    • G03F7/706851Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2022571783A 2020-05-22 2021-05-17 オーバーレイ計測ツールおよび方法 Active JP7527400B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063028568P 2020-05-22 2020-05-22
US63/028,568 2020-05-22
US17/068,328 2020-10-12
US17/068,328 US11346657B2 (en) 2020-05-22 2020-10-12 Measurement modes for overlay
PCT/US2021/032655 WO2021236470A1 (en) 2020-05-22 2021-05-17 Measurement modes for overlay

Publications (3)

Publication Number Publication Date
JP2023526864A JP2023526864A (ja) 2023-06-23
JP2023526864A5 JP2023526864A5 (https=) 2024-03-18
JP7527400B2 true JP7527400B2 (ja) 2024-08-02

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ID=78607884

Family Applications (1)

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JP2022571783A Active JP7527400B2 (ja) 2020-05-22 2021-05-17 オーバーレイ計測ツールおよび方法

Country Status (7)

Country Link
US (1) US11346657B2 (https=)
EP (1) EP4115172A4 (https=)
JP (1) JP7527400B2 (https=)
KR (1) KR102789381B1 (https=)
CN (1) CN115552228B (https=)
TW (1) TWI862840B (https=)
WO (1) WO2021236470A1 (https=)

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US11460783B2 (en) * 2021-01-07 2022-10-04 Kla Corporation System and method for focus control in extreme ultraviolet lithography systems using a focus-sensitive metrology target
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US11841621B2 (en) * 2021-10-29 2023-12-12 KLA Corporation CA Moiré scatterometry overlay
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US11796925B2 (en) * 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
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US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
JP2024127783A (ja) * 2023-03-09 2024-09-20 レーザーテック株式会社 照明装置及び照明方法
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KR102742571B1 (ko) * 2023-06-26 2024-12-16 (주) 오로스테크놀로지 필터 조립체 및 이를 구비한 오버레이 측정 장치
US12360463B2 (en) * 2023-09-26 2025-07-15 Tokyo Electron Limited Fiber bundle based optical spot size selector
US20250139814A1 (en) * 2023-11-01 2025-05-01 Kla Corporation Overlay mark design enabling large overlay measurement
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US20250314973A1 (en) * 2024-04-09 2025-10-09 Kla Corporation METHODS FOR MEASUREMENT OF rAIM
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Also Published As

Publication number Publication date
WO2021236470A1 (en) 2021-11-25
CN115552228B (zh) 2024-10-18
EP4115172A4 (en) 2024-04-24
KR20230014766A (ko) 2023-01-30
JP2023526864A (ja) 2023-06-23
US11346657B2 (en) 2022-05-31
US20210364279A1 (en) 2021-11-25
CN115552228A (zh) 2022-12-30
TWI862840B (zh) 2024-11-21
KR102789381B1 (ko) 2025-03-31
TW202208812A (zh) 2022-03-01
EP4115172A1 (en) 2023-01-11

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