TWI862840B - 用於重疊之測量模式 - Google Patents
用於重疊之測量模式 Download PDFInfo
- Publication number
- TWI862840B TWI862840B TW110118397A TW110118397A TWI862840B TW I862840 B TWI862840 B TW I862840B TW 110118397 A TW110118397 A TW 110118397A TW 110118397 A TW110118397 A TW 110118397A TW I862840 B TWI862840 B TW I862840B
- Authority
- TW
- Taiwan
- Prior art keywords
- overlay
- pupil
- illumination
- sample
- metrology tool
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title claims description 143
- 210000001747 pupil Anatomy 0.000 claims abstract description 332
- 238000005286 illumination Methods 0.000 claims abstract description 244
- 238000009826 distribution Methods 0.000 claims abstract description 45
- 230000000737 periodic effect Effects 0.000 claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 70
- 238000002834 transmittance Methods 0.000 claims description 32
- 230000003287 optical effect Effects 0.000 claims description 26
- 238000003384 imaging method Methods 0.000 claims description 19
- 230000003068 static effect Effects 0.000 claims description 14
- 230000004044 response Effects 0.000 claims description 11
- 238000013461 design Methods 0.000 claims description 9
- 239000013307 optical fiber Substances 0.000 claims description 9
- 238000012883 sequential measurement Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 33
- 238000010586 diagram Methods 0.000 description 31
- 238000001459 lithography Methods 0.000 description 13
- 230000010287 polarization Effects 0.000 description 10
- 238000000691 measurement method Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
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- 239000004020 conductor Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063028568P | 2020-05-22 | 2020-05-22 | |
| US63/028,568 | 2020-05-22 | ||
| US17/068,328 | 2020-10-12 | ||
| US17/068,328 US11346657B2 (en) | 2020-05-22 | 2020-10-12 | Measurement modes for overlay |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202208812A TW202208812A (zh) | 2022-03-01 |
| TWI862840B true TWI862840B (zh) | 2024-11-21 |
Family
ID=78607884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110118397A TWI862840B (zh) | 2020-05-22 | 2021-05-21 | 用於重疊之測量模式 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11346657B2 (https=) |
| EP (1) | EP4115172A4 (https=) |
| JP (1) | JP7527400B2 (https=) |
| KR (1) | KR102789381B1 (https=) |
| CN (1) | CN115552228B (https=) |
| TW (1) | TWI862840B (https=) |
| WO (1) | WO2021236470A1 (https=) |
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| US10705435B2 (en) | 2018-01-12 | 2020-07-07 | Globalfoundries Inc. | Self-referencing and self-calibrating interference pattern overlay measurement |
| US12104891B1 (en) * | 2019-08-12 | 2024-10-01 | Nikon Corporation | Spatially filtered talbot interferometer for wafer distortion measurement |
| US11346657B2 (en) * | 2020-05-22 | 2022-05-31 | Kla Corporation | Measurement modes for overlay |
| JP7510280B2 (ja) * | 2020-06-02 | 2024-07-03 | キヤノン株式会社 | 検出器、インプリント装置および物品製造方法 |
| US11686576B2 (en) | 2020-06-04 | 2023-06-27 | Kla Corporation | Metrology target for one-dimensional measurement of periodic misregistration |
| US20220189023A1 (en) * | 2020-12-10 | 2022-06-16 | FEV Group GmbH | Systems, methods and computer program products for detecting individuals with fever in view of acute infection of the individual |
| US11460783B2 (en) * | 2021-01-07 | 2022-10-04 | Kla Corporation | System and method for focus control in extreme ultraviolet lithography systems using a focus-sensitive metrology target |
| US12111580B2 (en) | 2021-03-11 | 2024-10-08 | Kla Corporation | Optical metrology utilizing short-wave infrared wavelengths |
| US11841621B2 (en) * | 2021-10-29 | 2023-12-12 | KLA Corporation CA | Moiré scatterometry overlay |
| KR102875946B1 (ko) * | 2021-11-27 | 2025-10-23 | 케이엘에이 코포레이션 | 회절 기반 오버레이 오차 계측을 위한 개선된 타겟 |
| US11796925B2 (en) * | 2022-01-03 | 2023-10-24 | Kla Corporation | Scanning overlay metrology using overlay targets having multiple spatial frequencies |
| CN114354627B (zh) * | 2022-01-04 | 2022-11-22 | 浙江大学 | 一种用于表面缺陷检测的环形均匀准直照明装置及方法 |
| US12032300B2 (en) * | 2022-02-14 | 2024-07-09 | Kla Corporation | Imaging overlay with mutually coherent oblique illumination |
| US12487190B2 (en) | 2022-03-30 | 2025-12-02 | Kla Corporation | System and method for isolation of specific fourier pupil frequency in overlay metrology |
| US12422363B2 (en) | 2022-03-30 | 2025-09-23 | Kla Corporation | Scanning scatterometry overlay metrology |
| JP2024014030A (ja) * | 2022-07-21 | 2024-02-01 | キヤノン株式会社 | 検出装置、リソグラフィー装置および物品製造方法 |
| US20240110780A1 (en) * | 2022-09-30 | 2024-04-04 | Kla Corporation | Mosaic overlay targets |
| KR102546552B1 (ko) * | 2022-11-14 | 2023-06-22 | (주)오로스테크놀로지 | 오버레이 계측 장치의 동작을 제어하는 데이터를 저장하기 위한 데이터 구조를 기록한 컴퓨터 판독 가능 저장 매체 및 이를 위한 오버레이 계측 장치 |
| US12235588B2 (en) | 2023-02-16 | 2025-02-25 | Kla Corporation | Scanning overlay metrology with high signal to noise ratio |
| JP2024127783A (ja) * | 2023-03-09 | 2024-09-20 | レーザーテック株式会社 | 照明装置及び照明方法 |
| US12504697B2 (en) | 2023-06-02 | 2025-12-23 | Kla Corporation | Single grab pupil landscape via broadband illumination |
| KR102742571B1 (ko) * | 2023-06-26 | 2024-12-16 | (주) 오로스테크놀로지 | 필터 조립체 및 이를 구비한 오버레이 측정 장치 |
| US12360463B2 (en) * | 2023-09-26 | 2025-07-15 | Tokyo Electron Limited | Fiber bundle based optical spot size selector |
| US20250139814A1 (en) * | 2023-11-01 | 2025-05-01 | Kla Corporation | Overlay mark design enabling large overlay measurement |
| US12373936B2 (en) | 2023-12-08 | 2025-07-29 | Kla Corporation | System and method for overlay metrology using a phase mask |
| US20250306477A1 (en) * | 2024-03-27 | 2025-10-02 | Kla Corporation | Single grab pupil landscape via outside the objective lens broadband illumination |
| US20250314973A1 (en) * | 2024-04-09 | 2025-10-09 | Kla Corporation | METHODS FOR MEASUREMENT OF rAIM |
| US20260023269A1 (en) * | 2024-07-22 | 2026-01-22 | Kla Corporation | Dark field imaging system with twice-diffracted light for overlay metrology |
| US20260064017A1 (en) * | 2024-09-05 | 2026-03-05 | Kla Corporation | Systems and methods for dual-conjugate imaging for overlay metrology |
| CN121541419A (zh) * | 2026-01-19 | 2026-02-17 | 中国科学院光电技术研究所 | 多工况补偿器参数计算方法、系统、介质和程序产品 |
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| US9140998B2 (en) * | 2010-11-12 | 2015-09-22 | Asml Netherlands B.V. | Metrology method and inspection apparatus, lithographic system and device manufacturing method |
| US20170082932A1 (en) * | 2015-09-23 | 2017-03-23 | Kla-Tencor Corporation | Spectroscopic Beam Profile Overlay Metrology |
| US9632424B2 (en) * | 2011-07-28 | 2017-04-25 | Asml Netherlands B.V. | Illumination source for use in inspection methods and/or lithography; inspection and lithographic apparatus and inspection method |
| US9719920B2 (en) * | 2013-07-18 | 2017-08-01 | Kla-Tencor Corporation | Scatterometry system and method for generating non-overlapping and non-truncated diffraction images |
| US10401738B2 (en) * | 2017-08-02 | 2019-09-03 | Kla-Tencor Corporation | Overlay metrology using multiple parameter configurations |
| US20200124408A1 (en) * | 2018-10-17 | 2020-04-23 | Kla-Tencor Corporation | Efficient Illumination Shaping for Scatterometry Overlay |
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| JPH07297101A (ja) * | 1994-04-22 | 1995-11-10 | Nikon Corp | 投影露光装置 |
| US5805290A (en) * | 1996-05-02 | 1998-09-08 | International Business Machines Corporation | Method of optical metrology of unresolved pattern arrays |
| JPH11287616A (ja) * | 1998-03-31 | 1999-10-19 | Nikon Corp | ２光束生成装置及び位置検出装置 |
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| NL1036857A1 (nl) | 2008-04-21 | 2009-10-22 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
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| KR101003532B1 (ko) | 2008-08-06 | 2010-12-28 | (주)다미화학 | 탈모의 예방, 치료, 또는 육모용 조성물 |
| KR20120058572A (ko) * | 2009-08-24 | 2012-06-07 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 장치, 리소그래피 처리 셀 및 메트롤로지 타겟들을 포함하는 기판 |
| WO2015009739A1 (en) * | 2013-07-18 | 2015-01-22 | Kla-Tencor Corporation | Illumination configurations for scatterometry measurements |
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| CN112859540B (zh) * | 2015-05-19 | 2024-10-18 | 科磊股份有限公司 | 成像计量目标及方法 |
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| US11346657B2 (en) * | 2020-05-22 | 2022-05-31 | Kla Corporation | Measurement modes for overlay |
-
2020
- 2020-10-12 US US17/068,328 patent/US11346657B2/en active Active
-
2021
- 2021-05-17 KR KR1020227045266A patent/KR102789381B1/ko active Active
- 2021-05-17 JP JP2022571783A patent/JP7527400B2/ja active Active
- 2021-05-17 EP EP21808030.7A patent/EP4115172A4/en active Pending
- 2021-05-17 CN CN202180032424.4A patent/CN115552228B/zh active Active
- 2021-05-17 WO PCT/US2021/032655 patent/WO2021236470A1/en not_active Ceased
- 2021-05-21 TW TW110118397A patent/TWI862840B/zh active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9140998B2 (en) * | 2010-11-12 | 2015-09-22 | Asml Netherlands B.V. | Metrology method and inspection apparatus, lithographic system and device manufacturing method |
| US9632424B2 (en) * | 2011-07-28 | 2017-04-25 | Asml Netherlands B.V. | Illumination source for use in inspection methods and/or lithography; inspection and lithographic apparatus and inspection method |
| US9719920B2 (en) * | 2013-07-18 | 2017-08-01 | Kla-Tencor Corporation | Scatterometry system and method for generating non-overlapping and non-truncated diffraction images |
| US20170082932A1 (en) * | 2015-09-23 | 2017-03-23 | Kla-Tencor Corporation | Spectroscopic Beam Profile Overlay Metrology |
| US10401738B2 (en) * | 2017-08-02 | 2019-09-03 | Kla-Tencor Corporation | Overlay metrology using multiple parameter configurations |
| US20200124408A1 (en) * | 2018-10-17 | 2020-04-23 | Kla-Tencor Corporation | Efficient Illumination Shaping for Scatterometry Overlay |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021236470A1 (en) | 2021-11-25 |
| CN115552228B (zh) | 2024-10-18 |
| EP4115172A4 (en) | 2024-04-24 |
| KR20230014766A (ko) | 2023-01-30 |
| JP2023526864A (ja) | 2023-06-23 |
| US11346657B2 (en) | 2022-05-31 |
| US20210364279A1 (en) | 2021-11-25 |
| CN115552228A (zh) | 2022-12-30 |
| KR102789381B1 (ko) | 2025-03-31 |
| TW202208812A (zh) | 2022-03-01 |
| EP4115172A1 (en) | 2023-01-11 |
| JP7527400B2 (ja) | 2024-08-02 |
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