JP7522250B2 - CONTROL DEVICE, FILM FORMING APPARATUS, SCHEDULE SETTING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - Google Patents

Description

The present invention relates to a control device, a film forming device, a schedule setting method, and a method for manufacturing an electronic device.

In the manufacture of organic EL display panels and the like, a deposition material is deposited on a substrate through a mask. The deposition process may be performed with the substrate attached to an electrostatic chuck. It is known that in electrostatic chuck attachment, the time from when a voltage is applied to the electrostatic chuck until the capacitance reaches a steady value is read (e.g., Patent Documents 1 and 2). Patent Document 3 discloses that a control unit that controls the voltage of the electrodes of the electrostatic chuck adjusts the voltage according to the change in capacitance measured by a capacitance sensor.

Japanese Patent Application Publication No. 05-036806 JP 2001-308164 A JP 2016-063005 A

If a film deposition process is performed when the electrostatic chuck is not sufficiently adhering to the substrate, the film deposition accuracy may decrease. As one example, a film may not be deposited according to the shape and dimensions of the opening in the mask, resulting in a phenomenon known as "film blurring."

The present invention provides technology that suppresses deterioration in film formation accuracy.

According to one aspect of the present invention,
an electrostatic chuck for adsorbing the substrate;
a detection means for detecting attraction of a substrate by the electrostatic chuck;
A control device for a film forming apparatus comprising:
The detection means detects an electrostatic capacitance between the substrate and the electrostatic chuck,
an identifying means for identifying a time period from when an attraction voltage for attracting a substrate is applied to the electrostatic chuck to when the capacitance detected by the detecting means reaches a predetermined value , based on the capacitance detected by the detecting means, as information about an attraction time, which is a time period from when the attraction voltage is applied to the electrostatic chuck to when attraction of the substrate is completed;
A schedule control means for controlling a process schedule of the film forming apparatus,
the schedule control means changes a time period from the start of application of the attracting voltage to the electrostatic chuck to a start timing of a process performed after attracting the substrate, for one substrate, based on the information specified by the specifying means.
A control device is provided.

The present invention makes it possible to suppress deterioration in film formation accuracy.

Schematic diagram of a part of a manufacturing line for electronic devices. 1 is a schematic diagram of a film forming apparatus according to an embodiment. FIG. 4 is an explanatory diagram of a substrate supporting unit and an adsorption plate. FIG. 2 is a diagram showing an example of the hardware configuration of a film forming apparatus. 1 is a flowchart showing an example of a manufacturing process of a film forming apparatus. 6A to 6C are diagrams illustrating the state of the film forming apparatus in each step of the flowchart in FIG. 5 . 1A is a schematic diagram showing a relationship between an electrostatic chuck and a substrate when the electrostatic chuck attracts the substrate, and FIG. 1B is a diagram showing an example of a conductive film pattern formed on the substrate. 11A and 11B are flowcharts showing an example of processing by a processing unit. FIG. 13 is a graph showing the relationship between the adsorption voltage and the adsorption time. 11A and 11B are flowcharts showing an example of processing by a processing unit. 1A is an overall view of an organic EL display device, and FIG. 1B is a view showing a cross-sectional structure of one pixel.

The following embodiments are described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe multiple features, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicate explanations are omitted.

<Electronic device manufacturing line>
1 is a schematic diagram showing a part of the configuration of a manufacturing line for electronic devices to which the film forming apparatus of the present invention can be applied. The manufacturing line in FIG. 1 is used, for example, for manufacturing display panels for organic EL display devices for smartphones. In the manufacturing line, substrates 100 are sequentially transported to a film forming block 301, and organic EL elements are formed on the substrates 100.

In the deposition block 301, a plurality of deposition chambers 303a to 303d in which deposition processing is performed on the substrate 100, and a mask storage chamber 305 in which masks before and after use are stored are arranged around a transfer chamber 302 having an octagonal shape in a plan view. A transfer robot 302a for transporting the substrate 100 is arranged in the transfer chamber 302. The transfer robot 302a includes a hand for holding the substrate 100 and an articulated arm for moving the hand in the horizontal direction. In other words, the deposition block 301 is a cluster-type deposition unit in which a plurality of deposition chambers 303a to 303d are arranged so as to surround the transfer robot 302a. When the deposition chambers 303a to 303d are collectively referred to or when no distinction is made, they are referred to as deposition chambers 303.

In the transport direction (arrow direction) of the substrate 100, a buffer chamber 306, a swirl chamber 307, and a delivery chamber 308 are arranged upstream and downstream of the deposition block 301, respectively. During the manufacturing process, each chamber is maintained in a vacuum state. Although only one deposition block 301 is shown in FIG. 1, the manufacturing line according to this embodiment has multiple deposition blocks 301, and the multiple deposition blocks 301 are connected by a connection device composed of a buffer chamber 306, a swirl chamber 307, and a delivery chamber 308. The configuration of the connection device is not limited to this, and may be composed of only the buffer chamber 306 or the delivery chamber 308, for example.

The transfer robot 302a transfers the substrate 100 from the upstream delivery chamber 308 to the transfer chamber 302, transfers the substrate 100 between the deposition chambers 303, transfers the mask between the mask storage chamber 305 and the deposition chamber 303, and transfers the substrate 100 from the transfer chamber 302 to the downstream buffer chamber 306.

The buffer chamber 306 is a chamber for temporarily storing the substrates 100 depending on the operating status of the production line. The buffer chamber 306 is provided with a substrate storage shelf, also called a cassette, and a lifting mechanism. The substrate storage shelf has a multi-stage structure capable of storing multiple substrates 100 while maintaining the horizontal state in which the surface to be processed (surface to be film-formed) of the substrate 100 faces downward in the direction of gravity. The lifting mechanism raises and lowers the substrate storage shelf to align the stage where the substrate 100 is loaded or unloaded with the transport position. This allows multiple substrates 100 to be temporarily stored and retained in the buffer chamber 306.

The swirl chamber 307 is equipped with a device for changing the orientation of the substrate 100. In this embodiment, the swirl chamber 307 rotates the orientation of the substrate 100 by 180 degrees using a transport robot provided in the swirl chamber 307. The transport robot provided in the swirl chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and delivers it to the delivery chamber 308, so that the front end and the rear end of the substrate are swapped between the buffer chamber 306 and the delivery chamber 308. As a result, the orientation of the substrate 100 when it is brought into the deposition chamber 303 is the same in each deposition block 301, so that the scanning direction of the evaporation source relative to the substrate 100 and the orientation of the mask can be matched in each deposition block 301. With this configuration, the orientation of the mask installed in the mask storage chamber 305 in each deposition block 301 can be aligned, simplifying mask management and improving usability.

The control system of the manufacturing line includes a higher-level device 300 that controls the entire line as a host computer, and control devices 14a-14d, 309, and 310 that control each component, and these can communicate via a wired or wireless communication line 300a. The control devices 14a-14d are provided corresponding to the deposition chambers 303a-303d, and control the deposition device 1 described below. Note that when the control devices 14a-14d are referred to collectively or when no distinction is made, they are referred to as control device 14.

The control device 309 controls the transport robot 302a. The control device 310 controls the devices in the swirl chamber 307. The higher-level device 300 transmits information about the substrate 100 and instructions such as transport timing to each of the control devices 14, 309, and 310, and each of the control devices 14, 309, and 310 controls each component based on the received instructions.

<Overview of the film formation equipment>
FIG. 2 is a schematic diagram of a film forming apparatus 1 according to an embodiment. The film forming apparatus 1 provided in the film forming chamber 303 is an apparatus for forming a film of a deposition material on a substrate 100, and forms a thin film of the deposition material in a predetermined pattern through a mask 101. The material of the substrate 100 on which a film is formed in the film forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal, and a resin layer such as polyimide formed on glass is preferably used. The deposition material is an organic material, an inorganic material (metal, metal oxide, etc.), and the like. The film forming apparatus 1 can be applied to a manufacturing apparatus for manufacturing electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), and optical members, and is particularly applicable to a manufacturing apparatus for manufacturing organic EL panels. In the following description, an example will be described in which the film forming apparatus 1 forms a film on the substrate 100 by vacuum deposition, but this embodiment is not limited thereto, and can also be applied to various film forming methods such as sputtering and CVD. In each drawing, arrow Z indicates the vertical direction (gravity direction), and arrows X and Y indicate horizontal directions that are perpendicular to each other.

The film forming apparatus 1 has a box-shaped vacuum chamber 3 (also simply called a chamber) capable of maintaining a vacuum inside. The internal space 3a of the vacuum chamber 3 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 3 is connected to a vacuum pump (not shown). In this specification, "vacuum" refers to a state filled with gas at a pressure lower than atmospheric pressure, in other words, a reduced pressure state. In the internal space 3a of the vacuum chamber 3, a substrate support unit 6 that supports the substrate 100 in a horizontal position, a mask table 5 that supports the mask 101, a film forming unit 4, a plate unit 9, and an electrostatic chuck 15 are arranged. The mask 101 is a metal mask having an opening pattern corresponding to the thin film pattern to be formed on the substrate 100, and is placed on the mask table 5. The mask table 5 can be replaced with other forms of means for fixing the mask 101 in a predetermined position. As the mask 101, a mask having a structure in which a mask foil having a thickness of several μm to several tens of μm is welded and fixed to a frame-shaped mask frame can be used. The material of the mask 101 is not particularly limited, but a metal with a small thermal expansion coefficient, such as Invar, may be used. The film formation process is performed with the substrate 100 placed on the mask 101 and the substrate 100 and the mask 101 superimposed on each other.

The plate unit 9 includes a cooling plate 10 and a magnet plate 11. The cooling plate 10 is suspended below the magnet plate 11 so as to be displaceable in the Z direction relative to the magnet plate 11. The cooling plate 10 has a function of cooling the substrate 100 attracted to the electrostatic chuck 15 during film formation by contacting the electrostatic chuck 15 described later. The cooling plate 10 is not limited to a type that is equipped with a water cooling mechanism or the like and actively cools the substrate 100, and may be a plate-shaped member that does not have a water cooling mechanism or the like but removes heat from the substrate 100 by contacting the electrostatic chuck 15. The magnet plate 11 is a plate that attracts the mask 101 by magnetic force, and is placed on the upper surface of the substrate 100 to improve the adhesion between the substrate 100 and the mask 101 during film formation.

The cooling plate 10 and the magnetic plate 11 may be omitted as appropriate. For example, if the electrostatic chuck 15 is provided with a cooling mechanism, the cooling plate 10 may not be necessary. Also, if the electrostatic chuck 15 attracts the mask 101, the magnetic plate 11 may be omitted.

The film-forming unit 4 is composed of a heater, a shutter, an evaporation source drive mechanism, an evaporation rate monitor, etc., and is an evaporation source that deposits an evaporation material onto the substrate 100. More specifically, in this embodiment, the film-forming unit 4 is a linear evaporation source in which multiple nozzles (not shown) are arranged in the X direction, and the evaporation material is emitted from each nozzle. For example, the linear evaporation source is moved back and forth in the Y direction (depth direction of the device) by an evaporation source moving mechanism (not shown). In this embodiment, the film-forming unit 4 is provided in the vacuum chamber 3 in which the alignment process described below is performed. However, in an embodiment in which the film-forming process is performed in a chamber other than the vacuum chamber 3 in which the alignment is performed, the film-forming unit 4 is not disposed in the vacuum chamber 3.

The following description will be given with reference to FIG. 3 in addition to FIG. 2. FIG. 3 is an explanatory diagram of the substrate support unit 6 and the electrostatic chuck 15, as viewed from below.

The substrate support unit 6 supports the peripheral portion of the substrate 100. The substrate support unit 6 includes a plurality of base portions 61a-61d that form the outer frame of the substrate support unit 6, and a plurality of mounting portions 62 and 63 that protrude inward from the base portions 61a-61d. The mounting portions 62 and 63 are sometimes called "claws" or "fingers". The base portions 61a-61d are each supported by a support shaft R3. The mounting portions 62 are spaced apart on the base portions 61a-61d so as to support the long side of the peripheral portion of the substrate 100. The mounting portions 63 are spaced apart on the base portions 61a-61d so as to support the short side of the peripheral portion of the substrate 100. The substrate 100 that is carried into the film forming apparatus 1 by the transport robot 302a is supported by the mounting portions 62 and 63. Hereinafter, when base parts 61a to 61d are collectively referred to or when no distinction is made, they will be referred to as base part 61.

In this embodiment, the multiple mounting portions 62 and 63 are composed of leaf springs, and when the substrate 100 supported by the multiple mounting portions 62 and 63 is attracted to the electrostatic chuck 15, the elastic force of the leaf springs can press the periphery of the substrate 100 against the electrostatic chuck 15.

In the example of FIG. 3, the four base parts 61 form a rectangular frame with partial cutouts, but this is not limited thereto, and the base parts 61 may be a continuous rectangular frame that surrounds the outer periphery of the rectangular substrate 100. However, by providing cutouts by the multiple base parts 61, the transport robot 302a can avoid the base parts 61 when transferring the substrate 100 to the placement parts 62 and 63. This can improve the efficiency of transferring and transferring the substrate 100.

In addition, the substrate support unit 6 may be provided with a plurality of clamping parts corresponding to the plurality of mounting parts 62 and 63, and the peripheral part of the substrate 100 mounted on the mounting parts 62 and 63 may be clamped and held by the clamping parts.

The electrostatic chuck 15 attracts the substrate 100. In this embodiment, the electrostatic chuck 15 is provided between the substrate support unit 6 and the plate unit 9, and is supported by one or more support shafts R1. In this embodiment, the electrostatic chuck 15 is supported by four support shafts R1. In one embodiment, the support shaft R1 is a cylindrical shaft.

The electrostatic chuck 15 includes a structure in which an electric circuit such as a metal electrode is embedded inside a matrix (also called a base) made of a ceramic material. The surface of the electrostatic chuck 15 may be polyimide (resin) or may be anodized. In this embodiment, the electrostatic chuck 15 has a plurality of electrode portions 151. The electrode portion 151 includes an electrode 1511 to which a positive (+) voltage is applied and an electrode 1512 to which a negative (-) voltage is applied. When a voltage is applied to the electrodes 1511 and 1512, a polarization charge is induced in the substrate 100 through the ceramic matrix, and the substrate 100 is attracted and fixed to the attraction surface 150 of the electrostatic chuck 15 by the electrostatic attraction (electrostatic force) between the substrate 100 and the electrostatic chuck 15.

In this embodiment, the electrodes 1511 and 1512 each have a comb-tooth shaped metal member, and the comb-tooth portions are arranged alternately so that they are intertwined. However, the configuration of the electrode portion 151 can be set as appropriate as long as it is possible to generate an electrostatic attraction force between the electrode portion 151 and the substrate 100, which is the object to be attracted. The shape and number of the electrode portions 151 can also be changed as appropriate. For example, one electrode portion 151 may be formed over substantially the entire surface of the attraction surface 150 of the electrostatic chuck 15.

In addition, multiple openings 152 are formed in the electrostatic chuck 15, and the measurement units (first measurement unit 7 and second measurement unit 8) described later capture images of alignment marks described later through the multiple openings 152 to obtain information regarding the relative positional relationship between the substrate 100 and the mask 101.

The position adjustment unit 20 adjusts the relative position of the substrate 100, the peripheral portion of which is supported by the substrate support unit 6, or the substrate 100, the peripheral portion of which is attracted by the electrostatic chuck 15, and the mask 101. The position adjustment unit 20 adjusts the relative position of the substrate 100 with respect to the mask 101 by displacing the substrate support unit 6 or the electrostatic chuck 15 on the X-Y plane. In other words, the position adjustment unit 20 can be said to be a unit that adjusts the horizontal positional relationship between the mask 101 and the substrate 100. For example, the position adjustment unit 20 can displace the substrate support unit 6 in the X-direction and the Y-direction, and rotate it around an axis in the Z-direction. In this embodiment, the position of the mask 101 is fixed, and the substrate 100 is displaced to adjust their relative positions, but the mask 101 may be displaced to adjust the position, or both the substrate 100 and the mask 101 may be displaced. For example, the position adjustment unit 20 may displace the substrate support unit 6 using a well-known configuration, such as a motor as a driving source and a ball screw mechanism that converts the driving force of the motor into linear motion.

The distance adjustment unit 22 adjusts the distance between the electrostatic chuck 15 and the substrate support unit 6 and the mask table 5 by raising and lowering them, and moves the substrate 100 and the mask 101 closer to each other and farther apart in the thickness direction (Z direction) of the substrate 100. In this embodiment, the distance adjustment unit 22 includes a first lift plate 220 that supports the electrostatic chuck 15 via a plurality of support shafts R1 and supports the substrate support unit 6 via a plurality of support shafts R3. The distance adjustment unit 22 raises and lowers the electrostatic chuck 15 and the substrate support unit 6 by raising and lowering the first lift plate 220. In other words, the distance adjustment unit 22 brings the substrate 100 and the mask 101 closer to each other in the direction in which they are superimposed, and moves them apart in the opposite direction. The "distance" adjusted by the distance adjustment unit 22 is the so-called vertical distance (or perpendicular distance), and the distance adjustment unit can also be said to be a unit that adjusts the vertical positions of the mask 101 and the substrate 100. For example, the position adjustment unit 20 may displace the first lift plate 220 using a known configuration, such as a motor as a drive source and a ball screw mechanism that converts the drive force of the motor into linear motion. The distance adjustment unit 22 also includes an actuator 65 that moves the substrate support unit 6 relative to the first lift plate 220, thereby changing the relative position of the substrate support unit 6 with respect to the electrostatic chuck 15.

In the present embodiment, the distance adjustment unit 22 fixes the position of the mask table 5 and moves the substrate support unit 6 and electrostatic chuck 15 to adjust the distance in the Z direction, but this is not limited to this. The positions of the substrate support unit 6 or electrostatic chuck 15 may be fixed and the mask table 5 may be moved to adjust, or each of the substrate support unit 6, electrostatic chuck 15, and mask table 5 may be moved to adjust the distance between them.

The plate unit lifting unit 13 lifts and lowers the second lifting plate 12, which is disposed outside the vacuum chamber 3, thereby lifting and lowering the plate unit 9, which is connected to the second lifting plate 12 and disposed inside the vacuum chamber 3. The plate unit 9 is connected to the second lifting plate 12 via one or more support shafts R2. In this embodiment, the plate unit 9 is supported by two support shafts R2. The support shafts R2 extend upward from the magnet plate 11 and are connected to the second lifting plate 12 through the openings of the upper wall portion 30, the openings of the fixed plate 20a and the movable plate 20b, and the opening of the first lifting plate 220. For example, the position adjustment unit 20 may displace the second lifting plate 12 using a known configuration such as a motor as a driving source and a ball screw mechanism that converts the driving force of the motor into linear motion.

The openings in the upper wall 30 of the vacuum chamber 3 through which the support shafts R1 to R3 pass have a size that allows the support shafts R1 to R3 to be displaced in the X and Y directions. To maintain the airtightness of the vacuum chamber 3, bellows or the like are provided in the openings in the upper wall 30 through which the support shafts R1 to R3 pass.

The measurement units (first measurement unit 7 and second measurement unit 8) measure the positional misalignment between the substrate 100, whose peripheral portion is supported by the substrate support unit 6, and the mask 101. In this embodiment, the first measurement unit 7 and the second measurement unit 8 are both imaging devices (cameras) that capture images. The first measurement unit 7 and the second measurement unit 8 are disposed above the upper wall portion 30, and are capable of capturing images of the inside of the vacuum chamber 3 through a window portion (not shown) formed in the upper wall portion 30.

In this embodiment, the substrate 100 and the mask 101 are each formed with alignment marks used for these alignments. Furthermore, the substrate 100 and the mask 101 are each provided with rough alignment marks for performing rough position adjustments and fine alignment marks for performing more precise position adjustments.

The first measurement unit 7 is a low-magnification CCD camera (rough camera) with a relatively wide field of view but low resolution, and measures the rough positional deviation between the substrate 100 and the mask 101. For example, two first measurement units 7 are provided so as to capture images of rough alignment marks provided near the centers of the short sides of the substrate 100 and the mask 101 through the openings 152.

The second measurement unit 8 is a high-magnification CCD camera (fine camera) that has a relatively narrow field of view but high resolution (e.g., on the order of a few μm), and measures the misalignment between the substrate 100 and the mask 101 with high precision. For example, four second measurement units 8 are provided so as to capture images of fine alignment marks provided at the four corners of the substrate 100 and the mask 101 through the openings 152.

In this embodiment, the substrate 100 and mask 101 are roughly adjusted in position based on the measurement results of the first measurement unit 7, and then the substrate 100 and mask 101 are precisely adjusted in position based on the measurement results of the second measurement unit 8.

<Hardware Configuration>
Fig. 4 is a diagram showing an example of the hardware configuration of the film forming apparatus 1. Note that Fig. 4 is a diagram mainly showing the configuration related to the features of this embodiment, and some of the configuration is omitted.

The control device 14 controls the entire film forming apparatus 1. The control device 14 includes a processing unit 141, a memory unit 142, an input/output interface (I/O) 143, and a communication unit 144. The processing unit 141 is a processor such as a CPU, and executes a program stored in the memory unit 142 to control the film forming apparatus 1. The memory unit 142 is a storage device such as a ROM, RAM, or HDD, and stores various control information in addition to the program executed by the processing unit 141. The I/O 143 is an interface that transmits and receives signals between the processing unit 141 and each component of the film forming apparatus 1. The communication unit 144 is a communication device that communicates with the upper device 300 or other control devices 14, 309, 310, etc. via the communication line 300a, and the processing unit 141 receives information from the upper device 300 or transmits information to the upper device 300 via the communication unit 144. In addition, all or part of the control device 14 and the higher-level device 300 may be configured using a PLC, ASIC, or FPGA.

The power supply unit 17 is a power supply circuit that receives power from an external power supply 90, such as an AC power supply, and converts it into a predetermined power. In this embodiment, the power supply unit 17 includes a plurality of power supplies 171 corresponding to the plurality of electrode portions 151, respectively. The power supplies 171 apply a predetermined DC voltage to the electrode portions 151 based on instructions from the processing unit 141.

The detection unit 16 detects the capacitance of the electrode portion 151 of the electrostatic chuck 15. In this embodiment, the detection unit 16 includes a plurality of detectors 161 corresponding to each of the plurality of electrode portions 151. In other words, in this embodiment, a plurality of sets of the electrode portion 151, the detector 161, and the power source 171 are provided. In this embodiment, the detection unit 16 is provided outside the chamber 3.

In this embodiment, the detection unit 16 detects the capacitance of the electrode portion 151 of the electrostatic chuck 15, so there is no need to provide a separate electrode for detecting capacitance on the electrostatic chuck 15. This allows a wide area to be secured for the arrangement of the electrode portion 151 of the electrostatic chuck 15, and improves the chucking force of the electrostatic chuck 15.

In this embodiment, the processing unit 141 determines the suction time of the substrate 100 by the electrostatic chuck 15 based on the detection result of the detection unit 16. Specifically, when the voltage applied by the power supply 171 to the electrode unit 151 is constant, the capacitance between the electrode unit 151 and the substrate 100 changes depending on the distance between the electrode unit 151 and the conductive film pattern formed on the substrate 100 (see FIG. 7A, etc.). Therefore, the capacitance between the electrode unit 151 and the substrate 100 increases as the distance between them decreases while the substrate 100 is being suctioned. On the other hand, when the suction of the substrate 100 ends and the distance between the substrate 100 and the electrode unit 151 no longer changes, the capacitance takes a constant value. In other words, the processing unit 141 can determine the time from when the power supply unit 17 starts applying a voltage to the electrode unit 151 to when the capacitance detected by the detection unit 16 becomes a steady value as the suction time of the substrate 100 by the electrostatic chuck 15.

In addition, in this embodiment, as described below, the processing unit 141 controls the voltage value that the power supply unit 17 applies to the multiple electrode units 151 or the timing at which the power supply unit 17 applies the voltage to the multiple electrode units 151 based on the detection results of the detection unit 16.

<Manufacturing process of film forming device>
Fig. 5 is a flowchart showing an example of a manufacturing process of the film forming apparatus 1. This flowchart shows an overview of the process executed by the film forming apparatus 1 for one substrate 100. Fig. 6 is an explanatory diagram of the state of the film forming apparatus 1 in each process.

Step S1 (hereinafter, simply referred to as S1, and the same applies to the other steps) is a loading process. In this process, the substrate 100 is loaded into the film forming apparatus 1 by the transport robot 302a. The loaded substrate 100 is supported by the substrate support unit 6 (state ST100).

S2 is an adsorption process. For example, the processing unit 141 raises the substrate support unit 6 supporting the substrate 100 to a predetermined position (state ST101). Here, in state ST101, the peripheral portion of the substrate 100 supported by the substrate support unit 6 is in contact with the electrostatic chuck 15 or is slightly spaced apart. Meanwhile, the center portion of the substrate 100 is bent due to its own weight and is therefore spaced apart from the electrostatic chuck 15 compared to the peripheral portion. In state ST101, the processing unit 141 applies a voltage to the electrode portion 151 by the power supply unit 17 to generate an adsorption force, and adsorbs the substrate 100 to the electrostatic chuck 15 (state ST102).

S3 is an alignment process. The processing section 141 lowers the electrostatic chuck 15, which is holding the substrate 100, by using the distance adjustment unit 22 to bring the substrate 100 closer to the mask 101. Then, the position adjustment unit 20 adjusts the horizontal positions of the substrate 100 and the mask 101 (state ST103).

S4 is a film-forming step. In preparation for this, the processing section 141 brings the substrate 100, which has been aligned, into contact with the mask 101. Next, the processing section 141 lowers the plate unit 9 to bring the substrate 100 and the mask 101 into closer contact with each other by the magnetic force of the magnet plate 11 (state ST104). In this state, the processing section 141 causes the film-forming unit 4 to deposit the deposition material onto the substrate 100.

S5 is a peeling process. The processing unit 141 peels off the substrate 100 from the electrostatic chuck 15 by stopping the application of voltage to the electrode unit 151 (state ST100). Note that the processing unit 141 may reduce the adsorption voltage of the electrode unit 151 to a level where the electrostatic chuck 15 cannot maintain adsorption of the substrate 100 without stopping the application of voltage to the electrode unit 151.

S6 is a removal process. In this process, the substrate 100 is removed from the deposition apparatus to the outside of the apparatus by the transfer robot 302a.

<Adsorption of substrate by electrostatic chuck>
Fig. 7A is a schematic diagram showing the relationship between the electrostatic chuck 15 and the substrate 100 when the electrostatic chuck 15 attracts the substrate 100. Fig. 7B is a diagram showing an example of a conductive film pattern formed on the substrate 100.

First, the force of attraction of the electrostatic chuck 15 to the substrate 100 will be described. The force of attraction F of the electrostatic chuck 15 is calculated by the following formula (1):

F=Kε0εV2/2r2...(1)
Here, K is a constant due to the overlap rate between the electrode pattern of the electrostatic chuck 15 and the conductive film pattern of the substrate 100. In addition, ε0 is the dielectric constant of a vacuum, and ε is the dielectric constant of the dielectric layer (electrostatic chuck 15 (a) is a dielectric constant of the dielectric layer 153, the vacuum from the surface of the electrostatic chuck 15 to the substrate attracting surface, and the substrate thickness), V is an attraction voltage from the power source 171, and r is the thickness of the dielectric layer. is the sum of the thickness of the dielectric layer 153 of the electrostatic chuck 15 and the distance from the attraction surface 150 to the conductive film 1000 of the substrate 100.

In this embodiment, since the electrode pattern on the electrostatic chuck 15 side is basically constant, the constant K is determined to a value according to the conductive film pattern density of the substrate 100. Specifically, the greater the conductive film pattern density of the substrate 100, the greater the value of the constant K. For example, the conductive film 1000 of the substrate 100 shown in FIG. 7(A) has a greater conductive film pattern density than the conductive film 1000a of the substrate 100 shown in FIG. 7(B). Therefore, the constant K for the substrate 100 in FIG. 7(A) is greater than the constant K for the substrate 100 in FIG. 7(B).

When the adsorption voltage V is constant, according to formula (1), the adsorption force F of the electrostatic chuck 15 increases as the constant K increases. The greater the adsorption force F, the shorter the adsorption time from when the power supply 171 starts to apply voltage until the substrate 100 is adsorbed to the electrostatic chuck 15. Therefore, the substrate 100 shown in FIG. 7(A) has a shorter adsorption time than the substrate shown in FIG. 7(B). In this way, when the adsorption voltage V is constant, the adsorption time varies depending on the type of substrate 100, or more specifically, the conductive film pattern density of the substrate 100.

In the manufacturing process in the film forming apparatus 1, the process schedule may be managed so that the next process starts after a predetermined time has elapsed, based on the start of the adsorption of the substrate 100 by the electrostatic chuck 15. In the example of FIG. 5, the process schedule is managed so that the next process, the alignment process (S3), starts a predetermined time after the adsorption voltage V starts to be applied to the electrode portion 151 of the electrostatic chuck 15 in the adsorption process (S2). In such a case, if the adsorption time varies depending on the type of substrate 100, the next process may start in a state where the electrostatic chuck 15 is not yet sufficiently adsorbing the substrate 100.

If the next process is started while the electrostatic chuck 15 is not yet fully adsorbing the substrate 100, the accuracy of the film formation process (S4) may be reduced. For example, if the next process is an alignment process, the alignment accuracy may be reduced if the alignment is performed while the substrate 100 is bent. The reduced alignment accuracy may affect the film formation accuracy. Also, for example, if the film formation process is performed while the electrostatic chuck 15 is not fully adsorbing the substrate 100, the film formation accuracy may be reduced due to the influence of the bending of the substrate 100, causing a film not formed according to the shape and dimensions of the opening provided in the mask, resulting in so-called "film blurring."

Therefore, in this embodiment, the following process is performed to prevent a decrease in film formation accuracy.

<Processing Example 1>
8A is a flowchart showing a processing example of the processing unit 141. The outline of this flowchart is that the adsorption voltage V to the electrode unit 151 of the electrostatic chuck 15 is set based on the adsorption time of the substrate 100 by the electrostatic chuck 15. More specifically, when processing the substrates 100 in units of lots, the adsorption voltage V at the time of substrate adsorption is set based on the adsorption time of the first plurality of substrates 100 in the lot. This flowchart is started, for example, when the first substrate 100 of a lot consisting of multiple substrates 100 is adsorbed by the electrostatic chuck 15.

In S10, the processing unit 141 sets the setting value of the chucking voltage V of the electrode unit 151 to the reference voltage VS. In this embodiment, multiple power sources 171 are provided for multiple electrode units 151, respectively, so the processing unit 141 sets the setting value for each electrode unit 151 to the voltage VS, for example. Here, it can be said that the setting value of the chucking voltage V is initialized. The value of the reference voltage VS can be set as appropriate.

In S11, the processing unit 141 sets the number of measurements to i=1. For example, the processing unit 141 stores the set number of measurements (i=1) in the memory unit 142. This step is the initialization of the control parameters.

In S12, the processing unit 141 checks whether the number of measured sheets i is equal to or smaller than the predetermined number PN, and proceeds to S13 if the number of measured sheets i is equal to or smaller than the predetermined number PN, and proceeds to S15 if the number of measured sheets i exceeds the predetermined number PN. The predetermined number PN is set as the number of substrates 100 for which step S13, which will be described later, is executed. The predetermined number PN can be set appropriately, but may be, for example, 3 to 5.

In S13, the processing unit 141 executes an adsorption time measurement process. For example, as described above, the processing unit 141 measures the adsorption time as the time from when the adsorption voltage V starts to be applied to the electrode unit 151 until the capacitance value detected by the detection unit 16 reaches a steady value. That is, the processing unit 141 acquires the detection result of the detection unit 16 and identifies the adsorption time from the acquired detection result. In this embodiment, since a detector 161 is provided corresponding to each of the multiple electrode units 151, the processing unit 141 measures the adsorption time for each detector 161. In other words, the processing unit 141 identifies the adsorption time at multiple positions of the electrostatic chuck 15 based on the detection results of the multiple detectors 161.

In S14, the processing unit 141 sets the number of measured sheets to i = i + 1. That is, the number of measured sheets i is increased by 1. For example, the processing unit 141 updates the number of measured sheets i stored in the memory unit 142. Thereafter, the processing unit 141 returns to S12 and repeats the process. That is, the adsorption time measurement process in S13 is performed on P N substrates 100.

If the process branches to No in S12, in S15 the processing unit 141 executes a voltage setting process based on the measurement results in S13. The flow chart then ends.

Figure 8 (B) is a flowchart showing an example of processing by the processing unit 141, and shows a specific example of S15. Note that in this embodiment, since the adsorption time is measured for each electrode unit 151 based on the detection results of multiple detectors 161, the processing unit 141 can execute the processing of this flowchart for each electrode unit 151 sequentially or in parallel.

In S151, the processing unit 141 checks whether the adsorption time T is greater than or equal to the threshold value Th1, and if the adsorption time T is greater than or equal to the threshold value Th1 (above the threshold value), the processing proceeds to S152, and if the adsorption time T is less than the threshold value Th1, the processing proceeds to S153.

Here, the adsorption time T is the adsorption time of the substrate 100 based on the measurement results in the adsorption time measurement process of S13. For example, the adsorption time T may be the average value of the adsorption times of a predetermined number of substrates PN. The method of setting the adsorption time T may be changed as appropriate, and may be, for example, the average value of the adsorption times of the predetermined number of substrates PN excluding outliers, or the median value of the adsorption times of the predetermined number of substrates PN.

The threshold value Th1 may be set based on a reference time TS of the adsorption time of the substrate 100 by the electrostatic chuck 15. For example, when the allowable range TA of the adsorption time T is expressed by the reference time TS and an allowable error t0, the threshold value Th1 may be set as TS+t0 (see FIG. 9). The reference time TS is a reference value of the adsorption time of the substrate 100 by the electrostatic chuck 15, which is set in advance when the film forming apparatus 1 executes the adsorption process of the substrate 100. For example, the reference time TS may be the adsorption time when the electrostatic chuck 15 adsorbs the substrate 100 having a predetermined conductive film pattern density at a predetermined adsorption voltage V.

In S152, the processing unit 141 increases the set value of the adsorption voltage V applied to the electrode unit 151 by the power source 171. If the adsorption time T is greater than or equal to the threshold value Th1, the adsorption time T is longer than the reference time TS. Therefore, the processing unit 141 increases the adsorption voltage V to increase the adsorption force F of the electrostatic chuck 15 and shorten the adsorption time of the substrates 100 in the lot.

In S153, the processing unit 141 checks whether the adsorption time T is less than or equal to the threshold Th2 (less than or equal to the threshold Th1), and proceeds to S154 if the adsorption time T is less than or equal to the threshold Th2 (less than or equal to the threshold), and ends the flowchart if the adsorption time T exceeds the threshold Th2. For example, if the allowable range TA of the adsorption time T is represented by a reference time TS and an allowable error t0, the threshold Th2 can be set as TS-t0.

In S154, the processing unit 141 reduces the set value of the adsorption voltage V applied to the electrode unit 151 by the power source 171. If the adsorption time T is less than or equal to the threshold value Th2, the adsorption time T is shorter than the reference time TS. Therefore, the processing unit 141 reduces the adsorption voltage V to reduce the adsorption force F of the electrostatic chuck 15 and lengthen the adsorption time of the substrates 100 in the lot.

9 is a diagram showing the relationship between the adsorption voltage V and the adsorption time T. In FIG. 9, the relationship between the adsorption voltage V and the adsorption time T is shown for three types of substrates 100a to 100c having different conductive film pattern densities. The conductive film pattern densities of the substrates are 100a, 100b, and 100c in order. In the example of FIG. 9, the substrate 100a having the highest conductive film pattern density has an adsorption time T1 that is less than the threshold value Th2 when the adsorption voltage V is the reference voltage VS (S153: Yes). Therefore, the processing unit 141 sets the adsorption voltage to V1, which is lower than VS (S154)). This allows the adsorption time T to fall within the allowable range TA. Next, when the adsorption voltage V of the substrate 100b is the reference voltage VS, the adsorption time T2 falls within the allowable range TA (S151: No and S153: No). Therefore, the processing unit 141 does not change the voltage setting value from the adsorption voltage VS. Finally, for the substrate 100c with the smallest conductive film pattern density, when the chucking voltage V is the reference voltage VS, the chucking time T3 exceeds the threshold value Th1 (S151: Yes). Therefore, the processing unit 141 sets the chucking voltage to V3, which is higher than VS (S152). This allows the chucking time T to fall within the allowable range TA.

As described above, according to this processing example, the adsorption voltage of the electrostatic chuck 15 is set based on the adsorption time of the substrate 100 by the electrostatic chuck 15. This makes it possible to prevent subsequent processing from being performed in a state where the substrate 100 is not sufficiently adsorbed by the electrostatic chuck 15, and to prevent a decrease in film formation accuracy in the film formation process on the substrate 100.

Furthermore, according to this processing example, when the adsorption voltage V is set to the reference voltage VS, if the adsorption time T is outside the predetermined range, i.e., not within the range from the threshold value Th2 to the threshold value Th1, the adsorption voltage V during subsequent adsorption of the substrate 100 is set to a value different from the reference voltage VS. Specifically, when the adsorption time T is equal to or greater than the threshold value Th1, the processing unit 141 sets the adsorption voltage V to a voltage higher than the reference voltage VS. This allows the adsorption time T to be adjusted so that it falls within the predetermined range, thereby preventing subsequent processing from being performed in a state where the electrostatic chuck 15 is not sufficiently adsorbing the substrate 100. This prevents a decrease in the accuracy of film formation during film formation processing on the substrate 100.

Furthermore, the processing unit 141 sets the chucking voltage V to a voltage lower than the reference voltage VS when the chucking time T is equal to or shorter than the threshold value Th2. When the chucking time T is equal to or shorter than the threshold value Th2, the chucking force F may be higher than necessary. In such a case, the substrate 100 may not be properly detached from the electrostatic chuck 15 in the peeling process of S5, resulting in peeling failure. Therefore, when the chucking time T is short, the chucking voltage V is set low to generate an appropriate chucking force F, thereby preventing peeling failure of the substrate 100.

Furthermore, according to this processing example, the adsorption voltage V for the subsequent substrates 100 is set based on the adsorption time T for the first multiple substrates of the same lot. Therefore, the adsorption voltage V for substrates 100 having similar substrate characteristics can be set based on the actual measured value of the adsorption time T.

In addition, in this embodiment, since the adsorption voltage V is set for each electrode unit 151, the adsorption force of the electrostatic chuck 15 can be set for each position where the electrode unit 151 is arranged. This makes it possible to more effectively adjust the adsorption force of the electrostatic chuck 15. However, the voltage of each electrode unit 151 may be set uniformly. For example, the average time or the latest time of adsorption of the substrate 100 by the multiple electrode units 151 may be set as the adsorption time T of the substrate 100, and the adsorption voltage V of the multiple electrode units 151 may be set uniformly based on the adsorption time T. In this case, one power source 171 may be provided for the multiple electrode units 151.

Also, the electrode portions 151 may be divided into a plurality of groups, and a power supply 171 may be provided for each group. For example, in a case where the electrostatic chuck 15 has nine electrode portions 151 as shown in FIG. 3, three electrode portions 151 arranged in the long side direction may be treated as one group, and a power supply 171 capable of applying a voltage to the electrode portions 151 of each group may be provided.

In the above example, it was described that the processing unit 141 measures the time from when the adsorption voltage V starts to be applied to the electrode unit 151 until the capacitance value detected by the detection unit 16 reaches a steady-state value as the adsorption time. The adsorption time may be the time until the capacitance value reaches a certain threshold value, rather than the time until the capacitance value reaches a steady-state value. In this case, even if the capacitance value is changing (i.e., even if it does not reach a steady state), it may be determined that the adsorption time has elapsed.

<Processing Example 2>
10A is a flowchart showing a processing example of the processing unit 141. The outline of this flowchart is to set a process schedule for the subsequent substrates 100 after the electrostatic chuck 15 starts to adsorb the substrates 100 based on the adsorption time of the substrates 100 by the electrostatic chuck 15. Specifically, the process schedule may be set to set the start timing of a subsequent process. Furthermore, when processing the substrates 100 in units of a lot, the start timing of a process for the subsequent substrates 100 after the electrostatic chuck 15 starts to adsorb the substrates 100 may be set based on the adsorption time of the first plurality of substrates 100 of the lot.

In other words, in comparison with process example 1, in process example 1, when the adsorption time T of the substrate 100 does not fall within the allowable range TA, the adsorption voltage V is changed so that the adsorption time T falls within the allowable range TA. This prevents the substrate 100 from proceeding to the next process in a state where it is not sufficiently adsorbed, and prevents a decrease in film formation accuracy in the film formation process. On the other hand, in process example 2, when the adsorption time T of the substrate 100 does not fall within the allowable range TA, the start timing of the next process is changed, thereby preventing the substrate 100 from proceeding to the next process in a state where it is not sufficiently adsorbed, and prevents a decrease in film formation accuracy in the film formation process.

This flowchart is started, for example, when the first substrate 100 in a lot consisting of multiple substrates 100 is attracted by the electrostatic chuck 15.

The following describes a case where the film forming apparatus 1 executes the process shown in FIG. 5, and the timing for starting the alignment process S3 after the start of adsorption by the electrostatic chuck 15 during the adsorption process S2 is set. Note that in this embodiment, if the start timing of the alignment process S3 is changed, the start timings of the subsequent processes (S4 to S6) are also changed accordingly.

In S20, the processing unit 141 sets the start timing after the electrostatic chuck 15 starts attracting the substrate 100 to a reference value. Note that the processes of S21 to S24 are similar to the processes of S11 to S14, and therefore will not be described. In S25, the processing unit 141 sets the start timing of the alignment process as a schedule setting for the process of the film forming apparatus 1, and ends the flowchart.

Figure 10 (B) is a flowchart showing a specific example of the process of S25. S251 and S253 are similar to S151 and S153, respectively, and therefore will not be described.

In S252, the processing unit 141 sets the start timing of the post-process, the alignment process, to be later for the subsequent substrate 100. If the adsorption time T is greater than or equal to the threshold value Th1, the adsorption time T is longer than the reference time TS. Therefore, the processing unit 141 sets the start timing of the post-process to be later.

In S254, the processing unit 141 sets the start timing of the post-process, the alignment process, earlier for the subsequent substrate 100. If the adsorption time T is less than or equal to the threshold value Th2, the adsorption time T is shorter than the reference time TS. Therefore, the processing unit 141 sets the start timing of the post-process earlier.

As described above, according to this processing example, when the adsorption voltage V is set to the reference voltage VS, if the adsorption time T is outside the predetermined range, i.e., not within the range from the threshold value Th2 to the threshold value Th1, the start timing of the subsequent process is set to a timing different from the reference value. Specifically, if the adsorption time T is equal to or greater than the threshold value Th1, the start timing of the subsequent process is set to be later, and if the adsorption time T is equal to or less than the threshold value Th2, the start timing of the subsequent process is set to be earlier. This makes it possible to prevent the subsequent process from being performed in a state in which the electrostatic chuck 15 is not sufficiently adsorbed to the substrate 100, and to prevent a decrease in the film formation accuracy in the film formation process on the substrate 100. In addition, if the adsorption time T is short, the start timing of the subsequent process is advanced, and the subsequent process is performed as soon as the substrate 100 is adsorbed to the electrostatic chuck 15. This makes it possible to shorten the processing time for one substrate 100 in the film formation device 1.

The change in the start timing is not limited to changing the start timing of the process immediately after the electrostatic chuck 15 adsorbs the substrate 100. For example, the processing unit 141 may change the start timing of the film formation process S4 and subsequent processes without changing the start timing of the alignment process S3.

<Method of Manufacturing Electronic Device>
Next, an example of a method for manufacturing an electronic device will be described. Below, as an example of an electronic device, the configuration and manufacturing method of an organic EL display device will be illustrated. In this example, the film formation block 301 illustrated in FIG. 1 is provided in, for example, three places on a manufacturing line.

First, the organic EL display device to be manufactured will be described. Figure 11(A) is an overall view of the organic EL display device 50, and Figure 11(B) is a diagram showing the cross-sectional structure of one pixel.

As shown in FIG. 11A, a plurality of pixels 52 each including a plurality of light-emitting elements are arranged in a matrix in a display area 51 of an organic EL display device 50. As will be described in detail later, each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes.

The pixel here refers to the smallest unit that allows a desired color to be displayed in the display area 51. In the case of a color organic EL display device, the pixel 52 is composed of a combination of multiple sub-pixels of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B that emit light differently from each other. The pixel 52 is often composed of a combination of three types of sub-pixels, a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. The pixel 52 needs to include at least one type of sub-pixel, and preferably includes two or more types of sub-pixels, and more preferably includes three or more types of sub-pixels. The sub-pixels that compose the pixel 52 may be, for example, a combination of four types of sub-pixels, a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

Figure 11 (B) is a partial cross-sectional schematic diagram taken along line A-B in Figure 11 (A). Pixel 52 has a plurality of sub-pixels on substrate 53, each of which is composed of an organic EL element having a first electrode (anode) 54, a hole transport layer 55, a red layer 56R, a green layer 56G, or a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58. Of these, hole transport layer 55, red layer 56R, green layer 56G, blue layer 56B, and electron transport layer 57 are organic layers. Red layer 56R, green layer 56G, and blue layer 56B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively.

The first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common across multiple light-emitting elements 52R, 52G, and 52B, or may be formed for each light-emitting element. That is, as shown in FIG. 11B, the hole transport layer 55 may be formed as a common layer across multiple sub-pixel regions, and the red layer 56R, the green layer 56G, and the blue layer 56B may be formed separately for each sub-pixel region on top of the hole transport layer 55, and the electron transport layer 57 and the second electrode 58 may be formed as a common layer across multiple sub-pixel regions on top of the hole transport layer 55.

In addition, an insulating layer 59 is provided between the first electrodes 54 to prevent short circuits between adjacent first electrodes 54. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

In FIG. 11B, the hole transport layer 55 and the electron transport layer 57 are shown as a single layer, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure that allows holes to be smoothly injected from the first electrode 54 to the hole transport layer 55 may be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

The red layer 56R, the green layer 56G, and the blue layer 56B may each be formed of a single light-emitting layer, or may be formed by laminating multiple layers. For example, the red layer 56R may be configured of two layers, with the upper layer being a red light-emitting layer and the lower layer being a hole transport layer or an electron blocking layer. Alternatively, the lower layer may be formed of a red light-emitting layer and the upper layer being an electron transport layer or a hole blocking layer. In this way, by providing a layer below or above the light-emitting layer, the light-emitting position in the light-emitting layer can be adjusted, and the optical path length can be adjusted, thereby improving the color purity of the light-emitting element.

Note that, although an example of the red layer 56R is shown here, a similar structure may also be adopted for the green layer 56G and the blue layer 56B. The number of layers may be two or more. Furthermore, layers of different materials may be laminated, such as a light-emitting layer and an electron blocking layer, or layers of the same material may be laminated, for example, two or more light-emitting layers may be laminated.

Next, an example of a manufacturing method for an organic EL display device will be specifically described. Here, it is assumed that the red layer 56R is made up of two layers, a lower layer 56R1 and an upper layer 56R2, and the green layer 56G and the blue layer 56B are made up of a single light-emitting layer.

First, a substrate 53 is prepared on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed. The material of the substrate 53 is not particularly limited, and it can be made of glass, plastic, metal, or the like. In this embodiment, a substrate in which a polyimide film is laminated on a glass substrate is used as the substrate 53.

A resin layer such as acrylic or polyimide is coated by bar coating or spin coating on the substrate 53 on which the first electrode 54 is formed, and the resin layer is patterned by lithography so that an opening is formed in the area where the first electrode 54 is formed, forming an insulating layer 59. This opening corresponds to the light-emitting area where the light-emitting element actually emits light.

The substrate 53 with the patterned insulating layer 59 is carried into the first deposition chamber 303, and the hole transport layer 55 is deposited as a common layer on the first electrode 54 in the display area. The hole transport layer 55 is deposited using a mask with an opening for each display area 51 that will eventually become the panel portion of each organic EL display device.

Next, the substrate 53 on which the hole transport layer 55 has been formed is carried into the second film formation chamber 303. The substrate 53 and the mask are aligned, the substrate is placed on the mask, and the red layer 56R is formed on the hole transport layer 55 in the portion of the substrate 53 where the red-emitting element is arranged (the region where the red subpixel is formed). Here, the mask used in the second film formation chamber is a high-definition mask in which openings are formed only in the multiple regions that will become the red subpixels among the multiple regions on the substrate 53 that will become the subpixels of the organic EL display device. As a result, the red layer 56R including the red light-emitting layer is formed only in the region that will become the red subpixel among the multiple regions on the substrate 53 that will become the subpixels. In other words, the red layer 56R is selectively formed in the region that will become the red subpixel, without being formed in the region that will become the blue subpixel or the green subpixel among the multiple regions on the substrate 53 that will become the subpixels.

Similar to the formation of the red layer 56R, the green layer 56G is formed in the third film formation chamber 303, and then the blue layer 56B is formed in the fourth film formation chamber 303. After the formation of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is formed over the entire display area 51 in the fifth film formation chamber 303. The electron transport layer 57 is formed as a layer common to the three color layers 56R, 56G, and 56B.

The substrate on which the electron transport layer 57 has been formed is moved to the sixth deposition chamber 303, where the second electrode 58 is formed. In this embodiment, the layers are formed by vacuum deposition in the first deposition chamber 303 to the sixth deposition chamber 303. However, the present invention is not limited to this, and for example, the second electrode 58 in the sixth deposition chamber 303 may be formed by sputtering. Thereafter, the substrate on which the second electrode 58 has been formed is moved to a sealing device, and the protective layer 60 is formed by plasma CVD (sealing process), completing the organic EL display device 50. Note that, although the protective layer 60 is formed by the CVD method here, the method is not limited to this, and it may also be formed by the ALD method or the inkjet method.

Here, the films are formed in the first to sixth film forming chambers 303 using a mask in which openings corresponding to the pattern of each layer to be formed are formed. When forming the film, the relative positions of the substrate 53 and the mask are adjusted (aligned), and then the substrate 53 is placed on the mask and film formation is performed. Here, the alignment process performed in each film forming chamber is performed in the same manner as the alignment process described above.

<Other embodiments>
In the above embodiment, initialization of the clamping voltage V is performed in S10 or S20, but this step can be omitted. For example, when processing the substrates 100 in units of lots, the clamping voltage V in the previous lot may be used as the initial value of the clamping voltage V.

Alternatively, when processing the substrate 100 in units of lots, if the next lot of substrates 100 has the same conductive film pattern density as the previous lot of substrates 100, the process of the above-mentioned <Processing Example 1> or <Processing Example 2> may be omitted. In this case, the process of the film forming apparatus 1 may be performed based on the set value of the adsorption voltage V or start timing set in the process for the previous lot. Also, for example, the set value of the adsorption voltage V or start timing for the subsequent lot may be set based on the average value of the set values of multiple lots (e.g., 2 to 5 lots) from the initial lot. Then, if the next lot of substrates 100 has a conductive film pattern density different from that of the previous lot of substrates 100, the process of the above-mentioned <Processing Example 1> or <Processing Example 2> may be performed, and the set value of the adsorption voltage V or start timing may be reset.

In the above embodiment, the suction time T is determined based on the detection result of the detection unit 16 that detects the electrostatic capacitance of the electrode portion 151, but the suction time T may be determined by other methods. For example, the electrostatic chuck 15 may be provided with one or more touch sensors capable of detecting contact with the substrate 100. The processing unit 141 may determine the suction time as the time from when a voltage begins to be applied to the electrode portion 151 until the touch sensor detects contact with the substrate 100. For example, the touch sensor may be a mechanical sensor having a contactor that can move forward and backward in the suction direction of the substrate 100, and in which the contactor is displaced when the contactor touches the substrate 100 to output a predetermined electrical signal. This allows the suction time T to be determined with a simple configuration.

Also, for example, the suction time T may be determined based on the detection results of a distance measurement sensor capable of optically detecting the distance to the substrate 100. For example, such a distance measurement sensor may be provided below the electrostatic chuck 15, and the suction time T may be determined as the time from when a voltage starts to be applied to the electrostatic chuck 15 until the distance between the substrate 100 and the distance measurement sensor reaches a steady value.

In the above embodiment, the processing unit 141 of the control device 14 of the film forming apparatus 1 executes the process of <Processing Example 1> or <Processing Example 2> described above. However, the process of <Processing Example 1> or <Processing Example 2> described above may be executed by a higher-level device 300 or the like that comprehensively controls the electronic device manufacturing line. Alternatively, the process of <Processing Example 1> or <Processing Example 2> described above may be executed by another device that can communicate with the control device 14.

The present invention can also be realized by supplying a program that realizes one or more of the functions of the above-mentioned embodiments to a system or device via a network or storage medium, and having one or more processors in the computer of the system or device read and execute the program. It can also be realized by a circuit (e.g., an ASIC) that realizes one or more of the functions.

The invention is not limited to the above-described embodiment, and various modifications and variations are possible without departing from the spirit and scope of the invention. Therefore, the following claims are appended to disclose the scope of the invention.

1 Film forming apparatus, 5 Mask table, 6 Substrate support unit, 141 Processing section, 15 Electrostatic chuck, 151 Electrode section, 16 Detection unit, 100 Substrate, 101 Mask

Claims (11)

an electrostatic chuck for adsorbing the substrate;
a detection means for detecting attraction of a substrate by the electrostatic chuck;
A control device for a film forming apparatus comprising:
The detection means detects an electrostatic capacitance between the substrate and the electrostatic chuck,
an identifying means for identifying a time period from when an attraction voltage for attracting a substrate is applied to the electrostatic chuck to when the capacitance detected by the detecting means reaches a predetermined value , based on the capacitance detected by the detecting means, as information about an attraction time, which is a time period from when the attraction voltage is applied to the electrostatic chuck to when attraction of the substrate is completed;
A schedule control means for controlling a process schedule of the film forming apparatus,
the schedule control means changes a time period from the start of application of the attracting voltage to the electrostatic chuck to a start timing of a process performed after attracting the substrate, for one substrate, based on the information specified by the specifying means.
A control device comprising: when the start timing is set to a first timing and the suction time is outside a predetermined range, the schedule control means sets the start timing of a process performed after the subsequent suction of the substrate to a second timing different from the first timing.
The control device according to claim 1 . when the start timing is set to the first timing and the suction time is equal to or longer than a third threshold, the schedule control means sets the start timing of a process performed after the subsequent suction of the substrate to be later than the first timing.
The control device according to claim 1 . when the start timing is set to the first timing and the suction time is equal to or shorter than a fourth threshold value, the schedule control means sets the start timing of a process performed after the subsequent suction of the substrate to be earlier than the first timing.
The control device according to claim 1 . the schedule control means sets the start timing of a process to be performed after the subsequent substrate suction based on the suction time for a predetermined number of substrates.
The control device according to any one of claims 1 to 4. a step performed after the adsorption of the substrate is an alignment step of aligning the substrate adsorbed on the electrostatic chuck with a mask;
The control device according to any one of claims 1 to 5. the detection means detects attraction of the substrate at a plurality of positions on the electrostatic chuck;
the schedule control means changes the start timing based on the suction time specified from detection results of suction of the substrate at the plurality of positions.
The control device according to any one of claims 1 to 6. an electrostatic chuck for adsorbing the substrate;
a detection means for detecting attraction of the substrate by the electrostatic chuck,
Controlled by the control device according to any one of claims 1 to 7,
A film forming apparatus comprising: the detection means is a capacitance sensor that detects a capacitance between the substrate and the electrostatic chuck;
9. The film forming apparatus according to claim 8. an electrostatic chuck for adsorbing the substrate;
a detection means for detecting attraction of a substrate by the electrostatic chuck;
A schedule setting method for setting a process schedule for a film forming apparatus comprising:
The detection means detects an electrostatic capacitance between the substrate and the electrostatic chuck,
determining, based on the capacitance detected by the detection means, a time period from when an attraction voltage for attracting a substrate is applied to the electrostatic chuck until when the capacitance detected by the detection means reaches a predetermined value, as information about an attraction time, which is a time period from when the attraction voltage is applied to the electrostatic chuck until when attraction of the substrate is completed;
A schedule setting process for setting a process schedule for the film forming apparatus,
the schedule setting step changes a time from a start of application of the attracting voltage to the electrostatic chuck to a start timing of a step performed after attracting the substrate, for one substrate, based on the information specified in the specifying step.
A schedule setting method comprising: A schedule setting step of setting the start timing by the schedule setting method according to claim 10;
an alignment step of aligning the substrate attracted to the electrostatic chuck with a mask placed on a mask table at the start timing set in the schedule setting step;
A film forming step of forming a film on the substrate through the mask.
2. A method for manufacturing an electronic device comprising the steps of:

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