CN115142036A

CN115142036A - Control device, film forming apparatus, substrate suction method, schedule setting method, and method for manufacturing electronic device

Info

Publication number: CN115142036A
Application number: CN202210290302.1A
Authority: CN
Inventors: 泷泽毅; 川畑奉代; 河合慈
Original assignee: Canon Tokki Corp
Current assignee: Canon Tokki Corp
Priority date: 2021-03-30
Filing date: 2022-03-23
Publication date: 2022-10-04
Also published as: JP2022155114A; KR20240027640A; JP7390328B2; JP2023080107A; KR20220136157A

Abstract

The invention relates to a control device, a film forming apparatus, a substrate adsorption method, a plan setting method and a manufacturing method of an electronic device, and provides a technology for restraining the reduction of film forming precision. A control device for a film forming apparatus includes: an electrostatic chuck that adsorbs a substrate; and a detection unit that detects the adsorption of the substrate by the electrostatic chuck. The control device is provided with: an acquisition unit that acquires a detection result of the detection unit; and a voltage control unit that sets a clamping voltage of the electrostatic chuck based on a clamping time of the electrostatic chuck to the substrate, which is determined based on the detection result obtained by the obtaining unit.

Description

Control device, film forming apparatus, substrate suction method, schedule setting method, and method for manufacturing electronic device

Technical Field

The invention relates to a control device, a film forming apparatus, a substrate adsorption method, a plan setting method and a manufacturing method of an electronic device.

Background

In the production of an organic EL display panel or the like, a vapor deposition substance is formed on a substrate through a mask. The film formation process may be performed in a state where the substrate is attracted to the electrostatic chuck. In the adsorption by the electrostatic chuck, a technique is known in which a time from when a voltage is applied to the electrostatic chuck until a stable value of electrostatic capacitance is obtained is read (for example, patent documents 1 and 2). Further, patent document 3 discloses that a control unit for controlling a voltage of an electrode of an electrostatic chuck adjusts the voltage in accordance with a change in electrostatic capacitance measured by an electrostatic capacitance sensor.

Prior art documents

Patent literature

Patent document 1: japanese patent laid-open No. H05-036806

Patent document 2: japanese patent laid-open No. 2001-308164

Patent document 3: japanese patent laid-open publication No. 2016-063005

Disclosure of Invention

Problems to be solved by the invention

When the film formation process is performed in a state where the substrate is insufficiently attracted by the electrostatic chuck, the film formation accuracy may be lowered. For example, there may be a case where so-called "film blurring" occurs in which film formation is not performed in accordance with the shape and size of an opening provided in a mask.

The invention provides a technique for suppressing the reduction of film forming precision.

Means for solving the problems

According to one aspect of the present invention, there is provided a control device for a film forming apparatus including an electrostatic chuck that adsorbs a substrate and a detection member that detects adsorption of the substrate by the electrostatic chuck, the control device including: an acquisition unit that acquires a detection result of the detection unit; and a voltage control unit that sets a clamping voltage of the electrostatic chuck based on a clamping time of the electrostatic chuck to the substrate, which is determined based on the detection result obtained by the obtaining unit.

Further, according to another aspect of the present invention, there is provided a control device for a film deposition apparatus including an electrostatic chuck configured to attract a substrate and a detection member configured to detect attraction of the substrate by the electrostatic chuck, the control device including: an acquisition unit that acquires information relating to a chucking time from when a chucking voltage for chucking a substrate is applied to the electrostatic chuck until a detection result of the detection unit reaches a predetermined value; and a schedule control unit that controls a process schedule of the film formation apparatus, wherein the schedule control unit changes a time from a start of application of the chucking voltage to the electrostatic chuck to a start timing of a process performed after chucking of a substrate with respect to one substrate, based on the information acquired by the acquisition unit.

Further, according to another aspect of the present invention, there is provided a film deposition apparatus comprising: an electrostatic chuck that adsorbs a substrate; and a detection unit that detects the adsorption of the substrate by the electrostatic chuck, wherein the film formation device is controlled by the control device.

In addition, according to another aspect of the present invention, there is provided a substrate chucking method in a film forming apparatus including an electrostatic chuck that chucks a substrate and a detection member that detects chucking of the substrate by the electrostatic chuck, the substrate chucking method including: an acquisition step of acquiring information on a chucking time from when a chucking voltage for chucking a substrate is applied to the electrostatic chuck until a detection result of the detection means reaches a predetermined value; and a voltage control step of changing a magnitude of the chucking voltage applied to the electrostatic chuck based on the information acquired in the acquisition step.

In addition, according to another aspect of the present invention, there is provided a method of manufacturing an electronic device, the method including: a substrate suction step of sucking a substrate to the electrostatic chuck by the substrate suction method; an alignment step of performing alignment between the substrate adsorbed to the electrostatic chuck by the substrate adsorption step and a mask placed on a mask stage; and a film formation step of forming a film on the substrate through the mask.

In addition, according to another aspect of the present invention, there is provided a plan setting method of setting a process plan of a film deposition apparatus including an electrostatic chuck that adsorbs a substrate and a detection member that detects adsorption of the substrate by the electrostatic chuck, the plan setting method including: an acquisition step of acquiring information on a chucking time from when a chucking voltage for chucking a substrate is applied to the electrostatic chuck until a detection result of the detection means reaches a predetermined value; and a schedule setting step of setting a process schedule of the film forming apparatus, wherein in the schedule setting step, a time from a start of application of the chucking voltage to the electrostatic chuck to a start timing of a process performed after chucking of a substrate with respect to one substrate is changed based on the information acquired in the acquisition step.

In addition, according to another aspect of the present invention, there is provided a method of manufacturing an electronic device, including: a plan setting step of setting the start timing by the plan setting method; an alignment step of aligning the substrate attracted to the electrostatic chuck and a mask placed on a mask stage at the start timing set in the plan setting step; and a film formation step of forming a film on the substrate through the mask.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present invention, a decrease in film formation accuracy can be suppressed.

Drawings

FIG. 1 is a schematic view of a portion of a manufacturing line for electronic devices.

Fig. 2 is a schematic view of a film deposition apparatus according to an embodiment.

Fig. 3 is an explanatory view of the substrate support unit and the suction plate.

Fig. 4 is a diagram showing an example of the hardware configuration of the film formation apparatus.

Fig. 5 is a flowchart illustrating an example of a manufacturing process of the film formation apparatus.

Fig. 6 is an explanatory diagram of a state of the film formation apparatus in each step of the flowchart of fig. 5.

Fig. 7 (a) is a schematic view showing a relationship between the electrostatic chuck and the substrate when the electrostatic chuck adsorbs the substrate, and (B) is a view showing an example of a conductive film pattern formed on the substrate.

Fig. 8 (a) and (B) are flowcharts showing an example of processing by the processing unit.

Fig. 9 is a graph showing a relationship between the clamping voltage and the clamping time.

Fig. 10 (a) and (B) are flowcharts showing an example of processing by the processing unit.

Fig. 11 (a) is an overall view of the organic EL display device, and (B) is a view showing a cross-sectional configuration of one pixel.

Description of the reference numerals

1 film forming device, 5 mask stage, 6 substrate supporting unit, 141 processing unit, 15 electrostatic chuck, 151 electrode unit, 16 detection unit, 100 substrate, 101 mask.

Detailed Description

Hereinafter, embodiments will be described in detail with reference to the drawings. The following embodiments do not limit the claims. Although a plurality of features are described in the embodiments, all of the plurality of features are not necessarily essential to the invention, and a plurality of features may be arbitrarily combined. In the drawings, the same or similar components are denoted by the same reference numerals, and redundant description thereof is omitted.

< production line of electronic device >

Fig. 1 is a schematic view showing a part of the structure of a production line of electronic devices to which a film forming apparatus of the present invention can be applied. The production line shown in fig. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smart phone, and the substrates 100 are sequentially conveyed to the film formation module 301, and film formation of organic EL elements is performed on the substrates 100.

In the film formation module 301, a plurality of film formation chambers 303a to 303d for performing film formation processing on the substrate 100 and a mask storage chamber 305 for storing masks before and after use are arranged around a transfer chamber 302 having an octagonal shape in a plan view. A transfer robot 302a for transferring the substrate 100 is disposed in the transfer chamber 302. The transfer robot 302a includes a hand that holds the substrate 100 and a multi-joint arm that moves the hand in the horizontal direction. In other words, the film formation module 301 is a cluster-type film formation unit in which a plurality of film formation chambers 303a to 303d are arranged so as to surround the periphery of the transfer robot 302a. The film forming chambers 303a to 303d are collectively referred to as a film forming chamber 303 or are not distinguished from each other.

A buffer chamber 306, a spin chamber 307, and a delivery chamber 308 are disposed upstream and downstream of the film formation module 301, respectively, in the conveyance direction (arrow direction) of the substrate 100. During the manufacturing process, each chamber is maintained in a vacuum state. Although only one film formation module 301 is illustrated in fig. 1, the production line according to the present embodiment includes a plurality of film formation modules 301, and the plurality of film formation modules 301 are connected by a connection device including a buffer chamber 306, a rotation chamber 307, and a delivery chamber 308. The configuration of the coupling device is not limited to this, and may be constituted by only the buffer chamber 306 or the delivery chamber 308, for example.

The transfer robot 302a carries the substrate 100 into the transfer chamber 302 from the delivery chamber 308 on the upstream side, carries the substrate 100 between the film forming chambers 303, carries the mask between the mask storage chamber 305 and the film forming chamber 303, and carries the substrate 100 out from the transfer chamber 302 to the buffer chamber 306 on the downstream side.

The buffer chamber 306 is a chamber for temporarily storing the substrate 100 according to the operating state of the production line. The buffer chamber 306 is provided with a substrate storage shelf, also called a cassette, and an elevating mechanism. The substrate storage shelf has a multi-layer structure capable of storing a plurality of substrates 100 while keeping a target surface (film formation target surface) of the substrates 100 in a horizontal state facing downward in the direction of gravity. The lifting mechanism lifts and lowers the substrate storage shelf so as to match the layer for carrying in and out the substrate 100 with the carrying position. This allows the plurality of substrates 100 to be temporarily stored and retained in the buffer chamber 306.

The turning chamber 307 is provided with a device for changing the orientation of the substrate 100. In the present embodiment, the direction of the substrate 100 is rotated by 180 degrees in the spin chamber 307 by a transfer robot provided in the spin chamber 307. The transfer robot provided in the turning chamber 307 turns 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and transfers the substrate to the delivery chamber 308, thereby exchanging the front end and the rear end of the substrate between the buffer chamber 306 and the delivery chamber 308. Accordingly, since the directions when the substrate 100 is carried into the film forming chamber 303 are the same in each film forming module 301, the scanning direction of the evaporation source with respect to the substrate 100 and the direction of the mask can be made uniform in each film forming module 301. With such a configuration, the orientation in which the mask is set in the mask storage chamber 305 can be made uniform in each film formation module 301, and management of the mask can be simplified and usability can be improved.

The control system of the production line includes a host device 300 that controls the entire production line as a host, and control devices 14a to 14d, 309, and 310 that control the respective configurations, and can communicate with each other via a wired or wireless communication line 300 a. The control devices 14a to 14d are provided corresponding to the film forming chambers 303a to 303d, and control the film forming apparatus 1 described later. The control devices 14a to 14d are collectively referred to as the control device 14 or are not distinguished from each other.

The control device 309 controls the transfer robot 302a. The control device 310 controls the device of the turning chamber 307. The host device 300 transmits information about the substrate 100, instructions such as transfer timing, and the like to the

control devices

14, 309, and 310, and the

control devices

14, 309, and 310 control the respective configurations based on the received instructions.

< overview of film Forming apparatus >

Fig. 2 is a schematic view of the film deposition apparatus 1 according to an embodiment. The film forming apparatus 1 provided in the film forming chamber 303 is an apparatus for forming a film of a vapor deposition substance on a substrate 100, and forms a thin film of the vapor deposition substance in a predetermined pattern through a mask 101. The material of the substrate 100 on which the film is formed by the film forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal, and a material in which a resin layer such as polyimide is formed on glass is preferably used. The vapor deposition material may be an organic material, an inorganic material (metal, metal oxide, or the like), or the like. The film formation apparatus 1 is applicable to a manufacturing apparatus for manufacturing electronic devices such as display devices (flat panel displays), thin film solar cells, and organic photoelectric conversion elements (organic thin film imaging elements), optical members, and the like, and particularly applicable to a manufacturing apparatus for manufacturing organic EL panels. In the following description, an example in which the film forming apparatus 1 forms a film on the substrate 100 by vacuum deposition is described, but the present embodiment is not limited thereto, and can be applied to various film forming methods such as sputtering and CVD. In each drawing, arrow Z indicates a vertical direction (gravity direction), and arrows X and Y indicate horizontal directions perpendicular to each other.

The film deposition apparatus 1 includes a box-shaped vacuum chamber 3 (also simply referred to as a chamber) capable of maintaining the inside of the chamber in a vacuum state. The internal space 3a of the vacuum chamber 3 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In the present embodiment, the vacuum chamber 3 is connected to a vacuum pump, not shown. In the present specification, "vacuum" refers to a state filled with a gas having a pressure lower than atmospheric pressure, in other words, a reduced pressure state. In the internal space 3a of the vacuum chamber 3, a substrate support unit 6 for supporting the substrate 100 in a horizontal posture, a mask stage 5 for supporting the mask 101, a film formation unit 4, a plate unit 9, and an electrostatic chuck 15 are arranged. The mask 101 is a metal mask having an opening pattern corresponding to a thin film pattern formed on the substrate 100, and is placed on the mask stage 5. The mask stage 5 may be replaced with a member of another form for fixing the mask 101 at a predetermined position. As the mask 101, a mask having a structure in which a mask foil having a thickness of about several μm to several tens μm is fixed by welding to a frame-shaped mask frame can be used. The material of the mask 101 is not particularly limited, and a metal having a small thermal expansion coefficient such as invar may be used. The film formation process is performed in a state where the substrate 100 is placed on the mask 101 and the substrate 100 and the mask 101 are overlapped with each other.

The plate unit 9 includes a cooling plate 10 and a magnet plate 11. The cooling plate 10 is suspended below the magnet plate 11 so as to be displaceable in the Z direction with respect to the magnet plate 11. The cooling plate 10 has a function of cooling the substrate 100, which is adsorbed to the electrostatic chuck 15 described later, by coming into contact with the electrostatic chuck 15 during film formation. The cooling plate 10 is not limited to being provided with a water cooling mechanism or the like to actively cool the substrate 100, and may be a plate-shaped member that is not provided with a water cooling mechanism or the like but that takes heat from the substrate 100 by coming into contact with the electrostatic chuck 15. The magnet plate 11 is a plate that attracts the mask 101 by magnetic force, and is placed above the substrate 100 to improve the adhesion between the substrate 100 and the mask 101 during film formation.

The cooling plate 10 and the magnet plate 11 may be omitted as appropriate. For example, when the cooling mechanism is provided in the electrostatic chuck 15, the cooling plate 10 may be omitted. In addition, when the electrostatic chuck 15 adsorbs the mask 101, the magnet plate 11 may be omitted.

The film forming unit 4 is a vapor deposition source for depositing a vapor deposition material on the substrate 100, and is configured by a heater, a shutter, a driving mechanism of an evaporation source, an evaporation rate monitor, and the like. More specifically, in the present embodiment, the film formation unit 4 is a linear evaporation source in which a plurality of nozzles (not shown) are arranged in an array in the X direction and a vapor deposition material is discharged from each nozzle. For example, the linear evaporation source is reciprocated in the Y direction (depth direction of the apparatus) by an evaporation source moving mechanism (not shown). In the present embodiment, the film deposition unit 4 is provided in the vacuum chamber 3 that performs an alignment process described later. However, in an embodiment in which the film formation process is performed using a chamber different from the vacuum chamber 3 in which the alignment is performed, the film formation unit 4 is not disposed in the vacuum chamber 3.

In addition to fig. 2, the description will be made with reference to fig. 3. Fig. 3 is an explanatory view of the substrate support unit 6 and the electrostatic chuck 15, and a view of them as viewed from below.

The substrate support unit 6 supports the peripheral edge portion of the substrate 100. The substrate support unit 6 includes a plurality of base portions 61a to 61d constituting an outer frame thereof, and a plurality of

placement portions

62 and 63 projecting inward from the base portions 61a to 61d. In addition, the

placement portions

62 and 63 are also sometimes referred to as "receiving claws" or "fingers". The base portions 61a to 61d are supported by support shafts R3, respectively. The plurality of placement portions 62 are disposed at intervals on the base portions 61a to 61d so as to receive the long sides of the peripheral edge portion of the substrate 100. The plurality of placement portions 63 are disposed at intervals on the base portions 61a to 61d so as to receive the short sides of the peripheral edge portion of the substrate 100. The substrate 100 carried into the film deposition apparatus 1 by the transfer robot 302a is supported by the plurality of

placement units

62 and 63. Hereinafter, the base portion 61a to 61d will be referred to as a base portion 61 in a generic term or without distinction.

In the present embodiment, the plurality of

placement portions

62 and 63 are formed of plate springs, and when the substrate 100 supported by the plurality of

placement portions

62 and 63 is attracted to the electrostatic chuck 15, the peripheral edge of the substrate 100 can be pressed against the electrostatic chuck 15 by the elastic force of the plate springs.

In the example of fig. 3, a rectangular frame body having a cutout in a part thereof is configured by four base portions 61, but the present invention is not limited to this, and the base portions 61 may be a rectangular frame body having no gap so as to surround the outer periphery of the rectangular substrate 100. However, by providing the cutouts in the plurality of base portions 61, the transfer robot 302a can escape from the base portions 61 and retreat when the transfer robot 302a delivers and receives the substrate 100 to and from the

placement portions

62 and 63. This can improve the efficiency of conveyance and transfer of the substrate 100.

Further, the following form may be adopted: the substrate support unit 6 is provided with a plurality of clamps corresponding to the plurality of

placement portions

62 and 63, and the clamps clamp and hold the peripheral edge portions of the substrate 100 placed on the

placement portions

62 and 63.

The electrostatic chuck 15 adsorbs the substrate 100. In the present embodiment, the electrostatic chuck 15 is provided between the substrate support unit 6 and the plate unit 9, and is supported by one or more support shafts R1. In the present embodiment, the electrostatic chuck 15 is supported by four support shafts R1. In one embodiment, the support shaft R1 is a cylindrical shaft.

The electrostatic chuck 15 includes a structure in which a circuit such as a metal electrode is embedded in a ceramic base (also referred to as a base), for example. The surface of the electrostatic chuck 15 may be made of polyimide (resin) or may be anodized aluminum. In the present embodiment, the electrostatic chuck 15 has a plurality of electrode portions 151. The electrode section 151 includes an electrode 1511 to which a positive (+) voltage is applied and an electrode 1512 to which a negative (-) voltage is applied. When a voltage is applied to the electrode 1511 and the electrode 1512, the polarization charge is guided to the substrate 100 by the ceramic base, and the substrate 100 is attracted and fixed to the attraction surface 150 of the electrostatic chuck 15 by an electrostatic attraction (electrostatic force) between the substrate 100 and the electrostatic chuck 15.

In the present embodiment, each of the

electrodes

1511 and 1512 has a metal member having a comb-tooth shape, and the comb-tooth portions are alternately arranged so as to have a staggered structure. However, the structure of the electrode portion 151 can be set as appropriate as long as electrostatic attraction can be generated between the electrode portion and the substrate 100 as an adsorbate. The shape and number of the electrode portions 151 can be changed as appropriate. For example, one electrode portion 151 may be formed over substantially the entire suction surface 150 of the electrostatic chuck 15.

Further, a plurality of openings 152 are formed in the electrostatic chuck 15, and information on the relative positional relationship between the substrate 100 and the mask 101 is acquired by imaging alignment marks (described later) through the plurality of openings 152 by measurement means (the first measurement means 7 and the second measurement means 8) described later.

The position adjusting unit 20 adjusts the relative position of the substrate 100 whose peripheral edge portion is supported by the substrate supporting unit 6 or the substrate 100 sucked by the electrostatic chuck 15 and the mask 101. The position adjusting unit 20 adjusts the relative position of the substrate 100 with respect to the mask 101 by displacing the substrate supporting unit 6 or the electrostatic chuck 15 on the X-Y plane. That is, the position adjusting means 20 can be said to be means for adjusting the horizontal positional relationship between the mask 101 and the substrate 100. For example, the position adjusting unit 20 can displace the substrate supporting unit 6 in the X direction and the Y direction and rotate about an axis in the Z direction. In the present embodiment, the position of the mask 101 is fixed and the substrate 100 is displaced, and the relative position of the mask 101 and the substrate 100 is adjusted, but the mask 101 may be displaced and adjusted, or both the substrate 100 and the mask 101 may be displaced. For example, the position adjusting means 20 may displace the substrate supporting means 6 by a known structure such as a motor serving as a driving source and a ball screw mechanism that converts the driving force of the motor into a linear motion.

The distance adjusting unit 22 moves the electrostatic chuck 15 and the substrate support unit 6 up and down to adjust the distance between them and the mask stage 5, thereby moving the substrate 100 and the mask 101 closer to and away from each other (away from each other) in the thickness direction (Z direction) of the substrate 100. In the present embodiment, the distance adjusting unit 22 includes the first elevating plate 220 that supports the electrostatic chuck 15 via the plurality of support shafts R1 and supports the substrate supporting unit 6 via the plurality of support shafts R3. The distance adjusting unit 22 moves the first elevating plate 220 up and down to move the electrostatic chuck 15 and the substrate supporting unit 6 up and down. That is, the distance adjusting means 22 moves the substrate 100 and the mask 101 closer to each other in the direction of overlapping or away from each other in the opposite direction. The "distance" to be adjusted by the distance adjusting means 22 is a so-called vertical distance (or vertical distance), and the distance adjusting means may be a means for adjusting the vertical position of the mask 101 and the substrate 100. For example, the position adjusting means 20 may displace the first elevating plate 220 by a known structure such as a motor serving as a driving source and a ball screw mechanism that converts a driving force of the motor into a linear motion. Further, the distance adjusting unit 22 includes an actuator 65 that moves the substrate supporting unit 6 relative to the first elevating plate 220, thereby changing the relative position of the substrate supporting unit 6 with respect to the electrostatic chuck 15.

The distance adjusting unit 22 of the present embodiment adjusts the Z-direction distance of the substrate support unit 6 and the electrostatic chuck 15 by fixing the position of the mask stage 5 and moving them, but is not limited to this. The position of the substrate support unit 6 or the electrostatic chuck 15 may be fixed and the mask stage 5 may be moved to adjust the position, or the distance between the substrate support unit 6, the electrostatic chuck 15, and the mask stage 5 may be adjusted by moving each of them.

The plate unit lifting and lowering unit 13 lifts and lowers the plate unit 9 coupled to the second lifting and lowering plate 12 and disposed inside the vacuum chamber 3 by lifting and lowering the second lifting and lowering plate 12 disposed outside the vacuum chamber 3. The plate unit 9 is coupled to the second elevating plate 12 via one or more support shafts R2. In the present embodiment, the plate unit 9 is supported by two support shafts R2. The support shaft R2 extends upward from the magnet plate 11, and is connected to the second elevating plate 12 through the opening of the upper wall portion 30, the openings of the fixed plate 20a and the movable plate 20b, and the opening of the first elevating plate 220. For example, the position adjusting means 20 may displace the second lifter plate 12 using a known structure such as a motor as a driving source and a ball screw mechanism that converts the driving force of the motor into linear motion.

The opening of the upper wall portion 30 of the vacuum chamber 3 through which the support shafts R1 to R3 pass has a size allowing the support shafts R1 to R3 to be displaced in the X direction and the Y direction. In order to maintain the airtightness of the vacuum chamber 3, a bellows or the like is provided in an opening of the upper wall portion 30 through which each of the support shafts R1 to R3 passes.

The measurement units (the first measurement unit 7 and the second measurement unit 8) measure the positional displacement between the mask 101 and the substrate 100 whose peripheral portion is supported by the substrate support unit 6. Both the first measurement unit 7 and the second measurement unit 8 of the present embodiment are imaging devices (cameras) that capture images. The first measuring unit 7 and the second measuring unit 8 are disposed above the upper wall portion 30, and can take images of the inside of the vacuum chamber 3 through a window portion (not shown) formed in the upper wall portion 30.

In this embodiment, alignment marks for alignment of the substrate 100 and the mask 101 are formed on the substrate and the mask, respectively. Further, a rough alignment mark for performing rough position adjustment and a fine alignment mark for performing more precise position adjustment are provided on the substrate 100 and the mask 101, respectively.

The first measurement unit 7 is a low-magnification CCD camera (coarse camera) having a relatively wide field of view but a low resolution, and measures an approximate positional deviation of the substrate 100 from the mask 101. For example, two first measurement units 7 are provided so as to take images of rough alignment marks provided near the centers of the short sides of the substrate 100 and the mask 101, respectively, through the openings 152.

The second measurement unit 8 is a high-magnification CCD camera (fine camera) having a relatively narrow field of view but a high resolution (for example, on the order of several μm), and measures the positional deviation of the substrate 100 and the mask 101 with high accuracy. The second measurement units 8 are provided with, for example, four so as to take images of fine alignment marks provided at the four corners of the substrate 100 and the mask 101, respectively, via the openings 152.

In the present embodiment, after rough position adjustment of the substrate 100 and the mask 101 is performed based on the measurement result of the first measurement unit 7, precise position adjustment of the substrate 100 and the mask 101 is performed based on the measurement result of the second measurement unit 8.

< hardware architecture >

Fig. 4 is a diagram showing a configuration example of hardware of the film formation apparatus 1. Fig. 4 is a diagram mainly showing a structure relating to the features of the present embodiment, and a part of the structure is omitted.

The controller 14 controls the entire film deposition apparatus 1. The control device 14 includes a processing unit 141, a storage unit 142, an input/output interface (I/O) 143, and a communication unit 144. The processing unit 141 is a processor represented by a CPU, and executes a program stored in the storage unit 142 to control the film deposition apparatus 1. The storage unit 142 is a storage device such as a ROM, a RAM, and an HDD, and stores various control information in addition to the program executed by the processing unit 141. The I/O143 is an interface for transmitting and receiving signals between the processing unit 141 and the respective components of the film deposition apparatus 1. The communication unit 144 is a communication device that communicates with the host device 300 or

other control devices

14, 309, 310 via the communication line 300a, and the processing unit 141 receives information from the host device 300 or transmits information to the host device 300 via the communication unit 144. All or a part of the control device 14 and the host device 300 may be configured by a PLC, an ASIC, or an FPGA.

The power supply unit 17 is a power supply circuit that receives electric power from an external power supply 90 such as an ac power supply and converts the electric power into predetermined electric power. In the present embodiment, the power supply unit 17 includes a plurality of power supplies 171 corresponding to the plurality of electrode portions 151, respectively. The power supply 171 applies a predetermined dc voltage to the electrode portion 151 based on an instruction from the processing portion 141.

The detection unit 16 detects the electrostatic capacitance of the electrode portion 151 of the electrostatic chuck 15. In the present embodiment, the detection unit 16 includes a plurality of detectors 161 corresponding to the plurality of electrode portions 151, respectively. That is, in the present embodiment, a plurality of groups of the electrode unit 151, the detector 161, and the power source 171 are provided. In addition, in the present embodiment, the detection unit 16 is provided outside the chamber 3.

In the present embodiment, the detection unit 16 does not need to separately provide an electrode for electrostatic capacitance detection or the like on the electrostatic chuck 15 in order to detect the electrostatic capacitance of the electrode portion 151 of the electrostatic chuck 15. This can ensure a wide arrangement region of the electrode portion 151 of the electrostatic chuck 15, and can improve the suction force of the electrostatic chuck 15.

In the present embodiment, the processing unit 141 determines the time for which the electrostatic chuck 15 sucks the substrate 100 based on the detection result of the detection unit 16. Specifically, when the voltage applied to the electrode portion 151 by the power source 171 is constant, the electrostatic capacitance between the electrode portion 151 and the substrate 100 changes depending on the distance between the electrode portion 151 and a conductive film pattern (see fig. 7 a and the like) formed on the substrate 100. Therefore, while the substrate 100 is being attracted, the capacitance between the electrode portion 151 and the substrate 100 increases as the distance therebetween decreases. On the other hand, when the adsorption of the substrate 100 is completed and the distance between the substrate 100 and the electrode portion 151 is not changed any more, a constant value is adopted. That is, the processing unit 141 can determine the time from when the power supply unit 17 starts applying the voltage to the electrode portion 151 until the electrostatic capacitance detected by the detection unit 16 becomes a stable value as the time for the electrostatic chuck 15 to attract the substrate 100.

In the present embodiment, as described later, the processing unit 141 controls the voltage value of the voltage applied to the plurality of electrode portions 151 by the power supply unit 17 or the timing of applying the voltage to the plurality of electrode portions 151 by the power supply unit 17 based on the detection result of the detection unit 16.

< Process for producing film Forming apparatus >

Fig. 5 is a flowchart illustrating an example of the manufacturing process of the film formation apparatus 1. The present flowchart shows an outline of the process performed by the film formation apparatus 1 for one substrate 100. Fig. 6 is an explanatory diagram of a state of the film formation apparatus 1 in each step.

Step S1 (hereinafter, simply referred to as S1, and the same applies to the other steps) is a carry-in step. In this step, the substrate 100 is carried into the film deposition apparatus 1 by the transfer robot 302a. The carried-in substrate 100 is supported by the substrate support unit 6 (state ST 100).

S2 is an adsorption process. For example, the processing unit 141 raises the substrate supporting unit 6 supporting the substrate 100 to a predetermined position (state ST 101). In state ST101, the peripheral edge of the substrate 100 supported by the substrate support unit 6 is in contact with the electrostatic chuck 15 or is slightly distant therefrom. On the other hand, the center portion of the substrate 100 is deflected by its own weight, and therefore, is located at a position farther from the electrostatic chuck 15 than the peripheral portion. The processing unit 141 generates the adsorption force by applying a voltage to the electrode unit 151 using the power supply unit 17 in the state ST101, the electrostatic chuck 15 is made to attract the substrate 100 (state ST 102).

And S3 is an alignment procedure. The processing unit 141 lowers the electrostatic chuck 15, to which the substrate 100 is attracted, by the distance adjustment unit 22 to bring the substrate 100 close to the mask 101. Then, the position adjustment unit 20 adjusts the horizontal positions of the substrate 100 and the mask 101 (state ST 103).

S4 is a film forming process. In preparation for this, the processing unit 141 brings the aligned substrate 100 into contact with the mask 101. Next, the processing unit 141 lowers the plate unit 9, and the substrate 100 and the mask 101 are further brought into close contact by the magnetic force of the magnet plate 11 (state ST 104). In this state, the processing section 141 uses the film forming unit 4 to deposit a vapor deposition material on the substrate 100.

And S5 is a stripping process. The processing unit 141 stops applying the voltage to the electrode unit 151, thereby peeling the substrate 100 off the electrostatic chuck 15 (state ST 100). The processing unit 141 may reduce the chucking voltage of the electrode unit 151 to such an extent that the electrostatic chuck 15 cannot maintain the chucking of the substrate 100 without stopping the application of the voltage to the electrode unit 151.

S6 is a carry-out step. In this step, the substrate 100 is carried out of the film deposition apparatus by the transfer robot 302a.

< attraction of substrate by electrostatic chuck >

Fig. 7 (a) is a schematic view showing a relationship between the electrostatic chuck 15 and the substrate 100 when the electrostatic chuck 15 adsorbs the substrate 100. Fig. 7 (B) is a diagram showing an example of a conductive film pattern formed on the substrate 100.

First, the attraction force of the electrostatic chuck 15 to the substrate 100 will be described. The suction force F of the electrostatic chuck 15 is calculated by the following formula (1).

F＝Kε0εV2/2r2···(1)

Here, K is a constant resulting from the overlapping ratio of the electrode pattern of the electrostatic chuck 15 and the conductive film pattern of the substrate 100. In addition, ∈ 0 is a dielectric constant of vacuum, ∈ is a dielectric constant of a dielectric layer (a composite dielectric constant of the dielectric layer 153 of the electrostatic chuck 15, vacuum from the surface layer of the electrostatic chuck 15 to the substrate suction surface, and the substrate thickness), V is a suction voltage by the power source 171, and r is the dielectric layer thickness. The thickness r of the dielectric layer is the sum of the thickness of the dielectric layer 153 of the electrostatic chuck 15 and the distance from the suction surface 150 to the conductive film 1000 of the substrate 100.

In the present embodiment, since the electrode pattern on the electrostatic chuck 15 side is substantially constant, the constant K is determined to be a value corresponding to the pattern density of the conductive film of the substrate 100. Specifically, the larger the conductive film pattern density of the substrate 100, the larger the value of the constant K. For example, the conductive film 1000 of the substrate 100 shown in fig. 7 (a) has a higher pattern density than the conductive film 1000a of the substrate 100 shown in fig. 7 (B). Therefore, the constant K of the substrate 100 of fig. 7 (a) is larger than the constant K of the substrate 100 of fig. 7 (B).

When the suction voltage V is constant, it is understood from the equation (1) that the larger the constant K is, the larger the suction force F of the electrostatic chuck 15 becomes. As the attraction force F increases, the attraction time from when the power source 171 starts applying the voltage until the substrate 100 is attracted to the electrostatic chuck 15 decreases. Therefore, the substrate 100 shown in fig. 7 (a) has a shorter adsorption time than the substrate shown in fig. 7 (B). As described above, when the chucking voltage V is constant, the chucking time varies according to the type of the substrate 100, more specifically, according to the pattern density of the conductive film of the substrate 100.

In the manufacturing process of the film forming apparatus 1, the following may occur: the process plan is managed so that the next process is started after a predetermined time has elapsed, based on the start of the suction of the substrate 100 by the electrostatic chuck 15. In the example of fig. 5, the process plan is managed so that the alignment process (S3) as the next process is started after a predetermined time has elapsed from the start of the application of the clamping voltage V to the electrode portion 151 of the electrostatic chuck 15 in the clamping process (S2). In such a case, if the suction time varies depending on the type of the substrate 100, the next step may be started in a state where the suction of the substrate 100 by the electrostatic chuck 15 is insufficient.

If the next process is started in a state where the electrostatic chuck 15 is not sufficiently adsorbing the substrate 100, the film forming accuracy may be lowered in the subsequent film forming process (S4). For example, when the next step is an alignment step, alignment is performed in a state where the substrate 100 is bent, and therefore, alignment accuracy may be lowered. The reduction in alignment accuracy may affect the film formation accuracy. Further, for example, when the film formation process is performed in a state where the adsorption of the electrostatic chuck 15 to the substrate 100 is insufficient, film formation accuracy may be lowered due to the influence of the deflection of the substrate 100, such as so-called "film blur" in which film formation is not performed in accordance with the shape and size of the opening provided in the mask.

Therefore, in the present embodiment, the following process is executed to suppress a decrease in film formation accuracy.

< processing example 1 >

Fig. 8 (a) is a flowchart showing an example of processing by the processing unit 141. The outline of the flow chart refers to the following case: the chucking voltage V to the electrode portion 151 of the electrostatic chuck 15 is set based on the chucking time of the substrate 100 by the electrostatic chuck 15. Further, the following is meant: when the substrates 100 are processed in a batch unit, the chucking voltage V at the time of chucking the substrates is set based on the chucking time of the first plurality of substrates 100 in the batch. For example, the flowchart is started when the electrostatic chuck 15 is used to chuck a first substrate 100 in a batch of a plurality of substrates 100.

In S10, the processing unit 141 sets the set value of the clamping voltage V of the electrode unit 151 to the reference voltage VS. In the present embodiment, since the plurality of power supplies 171 are provided for the plurality of electrode portions 151, the processing unit 141 sets a set value to the voltage VS for each electrode portion 151, for example. Here, it can be said that the set value of the clamping voltage V is initialized. The value of the reference voltage VS can be set as appropriate.

In S11, the processing unit 141 sets the number of measurement blocks to i =1. For example, the processing unit 141 stores the set number of measurement blocks (i = 1) in the storage unit 142. This step is the initialization of the control parameters.

In S12, the processing unit 141 checks whether or not the number of measurement blocks i is equal to or less than the predetermined number of blocks PN, and proceeds to S13 if the number of measurement blocks i is equal to or less than the predetermined number of blocks PN, and proceeds to S15 if the number of measurement blocks i exceeds the predetermined number of blocks PN. The predetermined number PN of blocks is set as the number of blocks of the substrate 100 to be subjected to the step S13 described later. The predetermined number of blocks PN can be set as appropriate, but may be, for example, a predetermined number of blocks PN =3 to 5.

In S13, the processing unit 141 (measuring means) executes the adsorption time measuring process. For example, as described above, the processing unit 141 measures the time from the start of applying the clamping voltage V to the electrode unit 151 until the capacitance value detected by the detection means 16 becomes a stable value as the clamping time. That is, the processing unit 141 acquires the detection result of the detection means 16, and determines the adsorption time based on the acquired detection result. In the present embodiment, since the detector 161 is provided for each of the plurality of electrode portions 151, the processing unit 141 measures the adsorption time for each of the detectors 161. In other words, the processing section 141 determines the adsorption time at a plurality of positions of the electrostatic chuck 15 based on the detection results of the plurality of detectors 161.

In S14, the processing unit 141 sets the number of measurement blocks to i = i +1. That is, the number of measurement blocks i is increased by 1. For example, the processing unit 141 updates the number i of measurement blocks stored in the storage unit 142. After that, the processing unit 141 returns to S12 and repeats the processing. That is, the adsorption time measurement processing of S13 is performed for the PN block substrate 100.

When the process proceeds to no in the branch of S12, the processing unit 141 (voltage control means) executes the voltage setting process based on the measurement result in S13 in S15. Thereafter, the flowchart is ended.

Fig. 8 (B) is a flowchart illustrating an example of processing by the processing unit 141, and illustrates a specific example of S15. In the present embodiment, since the adsorption time is measured for each electrode unit 151 based on the detection results of the plurality of detectors 161, the processing unit 141 can execute the processing of the flowchart sequentially or in parallel for each electrode unit 151.

In S151, the processing unit 141 checks whether or not the adsorption time T is equal to or longer than the threshold Th1, and proceeds to S152 if the adsorption time T is equal to or longer than the threshold Th1 (equal to or longer than the threshold), and proceeds to S153 if the adsorption time T is shorter than the threshold Th 1.

Here, the adsorption time T is the adsorption time of the substrate 100 based on the measurement result in the adsorption time measurement processing of S13. For example, the adsorption time T may be an average value of adsorption times of a predetermined number of substrates 100 PN. The method of setting the suction time T may be appropriately changed, and may be, for example, an average value of values obtained by subtracting the outlier from the suction time of the predetermined number of substrates 100 of the number PN, or a median of the suction time of the predetermined number PN of substrates 100.

The threshold Th1 may be set based on the reference time TS of the time for which the electrostatic chuck 15 sucks the substrate 100. For example, when the allowable range TA of the adsorption time T is represented by the reference time TS and the allowable error T0, the threshold Th1= TS + T0 (see fig. 9) may be set. The reference time TS is a reference value of the time for which the electrostatic chuck 15 sucks the substrate 100, which is set in advance when the film formation apparatus 1 performs the suction process of the substrate 100. For example, the reference time TS may be a suction time when the electrostatic chuck 15 sucks the substrate 100 having a predetermined conductive film pattern density at a predetermined suction voltage V.

In S152, the processing unit 141 increases the set value of the clamping voltage V to the electrode unit 151 by the power source 171. When the adsorption time T is equal to or longer than the threshold Th1, the adsorption time T is longer than the reference time TS. Therefore, the processing unit 141 increases the chucking voltage V to increase the chucking force F of the electrostatic chuck 15, thereby shortening the chucking time of the substrates 100 in the batch.

In S153, the processing unit 141 checks whether or not the adsorption time T is equal to or less than the threshold value Th2 (equal to or less than the threshold value Th 1), and if the adsorption time T is equal to or less than the threshold value Th2 (equal to or less than the threshold value), the routine proceeds to S154, and if the adsorption time T exceeds the threshold value Th2, the flowchart is terminated. For example, when the allowable range TA of the adsorption time T is represented by the reference time TS and the allowable error T0, the threshold Th2= TS-T0 may be set.

In S154, the processing unit 141 decreases the set value of the clamping voltage V to the electrode unit 151 by the power source 171. When the adsorption time T is less than or equal to the threshold Th2, the adsorption time T is shortened with respect to the reference time TS. Therefore, the processing unit 141 reduces the chucking voltage V to reduce the chucking force F of the electrostatic chuck 15, thereby increasing the chucking time of the substrates 100 in the batch.

Fig. 9 is a graph showing a relationship between the clamping voltage V and the clamping time T. Fig. 9 shows the relationship between the clamping voltage V and the clamping time T for three types of substrates 100a to 100c having different conductive film pattern densities. The conductive film pattern density of each substrate is set to be increased in the order of 100a, 100b, and 100 c. In the example of fig. 9, when the clamping voltage V is set to the reference voltage VS, the clamping time T1 is less than the threshold Th2 for the substrate 100a having the highest pattern density of the conductive film (S153: "yes"). Therefore, the processing unit 141 sets the clamping voltage to V1 lower than VS (S154)). This allows the adsorption time T to fall within the allowable range TA. Then, with respect to the substrate 100b, the chucking voltage V is set to the reference voltage VS, and the chucking time T2 is converged within the allowable range TA (S151: "NO" and S153: "NO"). Therefore, the processing unit 141 does not change the voltage set value from the adsorption voltage VS. Finally, in the substrate 100c having the smallest pattern density of the conductive film, the threshold value Th1 is exceeded by the adsorption time T3 when the adsorption voltage V is set to the reference voltage VS (S151: "YES"). Therefore, the processing unit 141 sets the clamping voltage to V3 higher than VS (S152). This makes it possible to keep the adsorption time T within the allowable range TA.

As described above, according to the present processing example, the chucking voltage of the electrostatic chuck 15 is set based on the chucking time of the substrate 100 by the electrostatic chuck 15. This can suppress the process of the subsequent step from being executed in a state where the electrostatic chuck 15 insufficiently adsorbs the substrate 100, and can suppress a decrease in film formation accuracy in the film formation process with respect to the substrate 100.

In addition, according to the present processing example, when the clamping voltage V is set to the reference voltage VS, and when the clamping time T is out of the predetermined range, that is, not in the range from the threshold value Th2 to the threshold value Th1, the clamping voltage V at the time of clamping of the substrate 100 thereafter is set to a value different from the reference voltage VS. Specifically, when the attraction time T is equal to or longer than the threshold Th1, the processing unit 141 sets the attraction voltage V to a voltage higher than the reference voltage VS. Accordingly, since the suction time T can be adjusted in a direction in which the suction time T converges in the predetermined range, it is possible to suppress the processing in the subsequent step from being executed in a state in which the suction of the substrate 100 by the electrostatic chuck 15 is insufficient. This can suppress a decrease in film formation accuracy in the film formation process on the substrate 100.

When the attraction time T is equal to or less than the threshold Th2, the processing unit 141 sets the attraction voltage V to a voltage lower than the reference voltage VS. When the adsorption time T is equal to or less than the threshold Th2, the adsorption force F may be higher than necessary. In such a case, the substrate 100 may not be smoothly peeled off from the electrostatic chuck 15 in the peeling step of S5, and a peeling failure may occur. Therefore, when the chucking time T is short, the chucking voltage V is set low to generate an appropriate chucking force F, thereby suppressing peeling failure of the substrate 100 and the like.

In addition, according to the present processing example, the chucking voltage V for the subsequent substrates 100 is set based on the chucking time T of the first plurality of substrates 100 in the same batch. Therefore, the chucking voltage V can be set for the substrates 100 having the same substrate characteristics based on the measured value of the chucking time T.

In the present embodiment, since the suction voltage V is set for each electrode portion 151, the suction force of the electrostatic chuck 15 can be set for each position where the electrode portion 151 is disposed. This enables the suction force of the electrostatic chuck 15 to be more effectively adjusted. However, the voltage of each electrode portion 151 may be set uniformly. For example, the average time and the latest time based on the adsorption time of the plurality of electrode portions 151 on the substrate 100 may be set as the adsorption time T of the substrate 100, and the adsorption voltage V of the plurality of electrode portions 151 may be set uniformly based on the adsorption time T. In this case, one power source 171 may be provided for each of the plurality of electrode portions 151.

Alternatively, the electrode portion 151 may be divided into a plurality of groups, and the power source 171 may be provided for each group. For example, when nine electrode portions 151 are provided in the electrostatic chuck 15 as shown in fig. 3, three electrode portions 151 arranged in the longitudinal direction may be provided as one group, and a power supply 171 capable of applying a voltage to each group of electrode portions 151 may be provided.

In the above example, the case where the processing unit 141 measures the time from the start of applying the clamping voltage V to the electrode unit 151 to the time when the capacitance value detected by the detection means 16 becomes a stable value as the clamping time has been described. Instead of setting the time until the capacitance value becomes a stable value as the adsorption time, the time until the capacitance value reaches a predetermined threshold value may be set as the adsorption time. In this case, even if the capacitance value changes (i.e., even if it is unstable), it can be determined that the adsorption time has elapsed.

< treatment example 2 >

Fig. 10 (a) is a flowchart showing an example of processing by the processing unit 141. The flow chart is outlined as follows: a process plan after the start of the chucking of the substrate 100 by the electrostatic chuck 15 for the subsequent substrate 100 is set based on the chucking time of the substrate 100 by the electrostatic chuck 15. Specifically, the process plan may be set at the start timing of the subsequent process. Further, the following may be also possible: when the substrates 100 are processed in a batch unit, the timing of starting the process after the start of the adsorption of the substrates 100 by the electrostatic chuck 15 on the following substrates 100 is set based on the adsorption time of the first plurality of substrates 100 in the batch.

That is, when a comparison with the processing example 1 is described, in the processing example 1, when the chucking time T of the substrate 100 does not converge to the allowable range TA, the chucking voltage V is changed so that the chucking time T converges to the allowable range TA. This can prevent the substrate 100 from being insufficiently adsorbed and from entering the next step, and can prevent the film formation accuracy from being lowered in the film formation step. On the other hand, in process example 2, by changing the start timing of the next step when the adsorption time T of the substrate 100 does not fall within the allowable range TA, it is possible to suppress the progress to the next step and the like in a state where the adsorption of the substrate 100 is insufficient, and it is possible to suppress a decrease in film forming accuracy in the film forming step.

For example, the flowchart is started when the electrostatic chuck 15 is used to chuck a first substrate 100 in a batch of a plurality of substrates 100.

The following is explained below: when the film formation apparatus 1 executes the process shown in fig. 5, the timing for starting the alignment process of S3 is set after the start of the suction by the electrostatic chuck 15 in the suction process of S2. In the present embodiment, the following will be explained: when the start timing of the alignment step in S3 is changed, the start timing of the subsequent steps (S4 to S6) is also changed.

In S20, the processing unit 141 sets the start timing after the start of the chucking of the substrate 100 by the electrostatic chuck 15 to a reference value. The processing in S21 to S24 is the same as the processing in S11 to S14, and therefore, the description thereof is omitted. In S25, the processing unit 141 (schedule control means) sets the start timing of the alignment process as the schedule setting of the process of the film formation apparatus 1, and ends the flowchart.

Fig. 10 (B) is a flowchart showing a specific example of the processing of S25. S251 and S253 are the same processes as S151 and S153, respectively, and therefore, the description thereof is omitted.

In S252, the processing unit 141 sets the start timing of the alignment process as the subsequent process to be later with respect to the subsequent substrate 100. When the adsorption time T is equal to or longer than the threshold Th1, the adsorption time T is longer than the reference time TS. Therefore, the processing unit 141 sets the start timing of the subsequent step to be later.

In S254, the processing unit 141 sets the start timing of the alignment process, which is a subsequent process, to be earlier for the subsequent substrate 100. When the adsorption time T is less than or equal to the threshold Th2, the adsorption time T is shortened with respect to the reference time TS. Therefore, the processing unit 141 sets the start timing of the subsequent step earlier.

As described above, according to the present processing example, when the clamping voltage V is set to the reference voltage VS, and the clamping time T is out of the predetermined range, that is, not in the range from the threshold value Th2 to the threshold value Th1, the start timing of the subsequent step is set to a timing different from the reference value. Specifically, when the adsorption time T is equal to or greater than the threshold value Th1, the start timing of the subsequent step is set to be later, and when the adsorption time T is equal to or less than the threshold value Th2, the start timing of the subsequent step is set to be earlier. This can suppress the process of the subsequent step from being executed in a state where the electrostatic chuck 15 insufficiently adsorbs the substrate 100, and can suppress a decrease in film formation accuracy in the film formation process with respect to the substrate 100. When the suction time T is short, the timing for starting the subsequent process is advanced, and the subsequent process is performed immediately after the substrate 100 is sucked by the electrostatic chuck 15. This can shorten the processing time of the film deposition apparatus 1 for one substrate 100.

The change of the start timing is not limited to the change of the start timing of the process immediately after the adsorption of the substrate 100 by the electrostatic chuck 15. For example, the processing unit 141 may change the start timing after the film forming step of S4 without changing the start timing of the alignment step of S3.

< method for manufacturing electronic device >

Next, an example of a method for manufacturing an electronic device will be described. Hereinafter, the structure and the manufacturing method of the organic EL display device are exemplified as an example of the electronic device. In this example, the film formation module 301 illustrated in fig. 1 is provided at three locations on a production line, for example.

First, an organic EL display device to be manufactured is explained. Fig. 11 (a) is an overall view showing the organic EL display device 50, and fig. 11 (B) is a view showing a cross-sectional configuration of one pixel.

As shown in fig. 11 (a), a plurality of pixels 52 each including a plurality of light-emitting elements are arranged in a matrix in a display region 51 of an organic EL display device 50. The light-emitting elements each have a structure including an organic layer sandwiched between a pair of electrodes, which will be described in detail later.

The pixel herein refers to a minimum unit that can display a desired color in the display region 51. In the case of a color organic EL display device, the pixel 52 is configured by a combination of a plurality of sub-pixels, i.e., a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B, which emit light differently from each other. The pixel 52 is generally configured by a combination of three sub-pixels, i.e., a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited thereto. The pixel 52 only needs to include at least one sub-pixel, preferably includes more than two sub-pixels, and more preferably includes more than three sub-pixels. As the sub-pixel constituting the pixel 52, for example, a combination of four kinds of sub-pixels, i.e., a red (R) light emitting element, a green (G) light emitting element, a blue (B) light emitting element, and a yellow (Y) light emitting element, may be used.

Fig. 11 (B) is a partial cross-sectional view at the line a-B of fig. 11 (a). The pixel 52 has a plurality of sub-pixels formed of an organic EL element including a first electrode (anode) 54, a hole transport layer 55, one of a red layer 56R/a green layer 56G/a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58 on a substrate 53. The hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 correspond to organic layers. The red, green, and blue color layers 56R, 56G, and 56B are formed in patterns corresponding to light emitting elements (also referred to as organic EL elements) that emit red, green, and blue light, respectively.

The first electrode 54 is formed separately for each light emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common over the plurality of

light emitting elements

52R, 52G, and 52B, or may be formed for each light emitting element. That is, as shown in fig. 11 (B), the hole transport layer 55 may be formed as a common layer over a plurality of sub-pixel regions, the red layer 56R, the green layer 56G, and the blue layer 56B may be formed separately for each sub-pixel region, and the electron transport layer 57 and the second electrode 58 may be formed as a common layer over a plurality of sub-pixel regions.

In addition, in order to prevent a short circuit between the first electrodes 54 which are close to each other, an insulating layer 59 is provided between the first electrodes 54. Since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 60 for protecting the organic EL element from moisture and oxygen is provided.

In fig. 11 (B), the hole transport layer 55 and the electron transport layer 57 are illustrated as one layer, but may be formed of a plurality of layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display device. Further, a hole injection layer having a band structure that allows holes to be smoothly injected from the first electrode 54 into the hole transport layer 55 may be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

Each of the red, green, and blue color layers 56R, 56G, and 56B may be formed of a single light-emitting layer or may be formed by laminating a plurality of layers. For example, the red layer 56R may be formed of two layers, the upper layer may be formed of a red light-emitting layer, and the lower layer may be formed of a hole-transporting layer or an electron-blocking layer. Alternatively, the lower layer may be formed of a red light-emitting layer, and the upper layer may be formed of an electron-transporting layer or a hole-blocking layer. By providing the layer on the lower side or the upper side of the light-emitting layer in this manner, the light-emitting position of the light-emitting layer can be adjusted, and the color purity of the light-emitting element can be improved by adjusting the optical path length.

Note that, although the red layer 56R is illustrated here, the green layer 56G and the blue layer 56B may have the same structure. The number of layers may be two or more. Further, layers of different materials may be stacked as in the light-emitting layer and the electron-blocking layer, or layers of the same material may be stacked, for example, by stacking two or more layers of the light-emitting layer.

Next, an example of a method for manufacturing the organic EL display device will be specifically described. Here, a case is assumed where the red layer 56R is composed of two layers, the lower layer 56R1 and the upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light-emitting layer.

First, the substrate 53 on which the circuit (not shown) for driving the organic EL display device and the first electrode 54 are formed is prepared. The material of the substrate 53 is not particularly limited, and may be glass, plastic, metal, or the like. In the present embodiment, a substrate in which a film of polyimide is laminated on a glass substrate is used as the substrate 53.

A resin layer such as acrylic or polyimide is coated on the substrate 53 on which the first electrode 54 is formed by bar coating or spin coating, and the resin layer is patterned by photolithography so as to form an opening at a portion where the first electrode 54 is formed, and an insulating layer 59 is formed. The opening corresponds to a light-emitting region where the light-emitting element actually emits light.

The substrate 53 on which the insulating layer 59 is patterned is carried into the first film forming chamber 303, and a film is formed on the first electrode 54 in the display region with the hole transport layer 55 as a common layer. The hole transport layer 55 is formed using a mask having openings formed for each display region 51 which will eventually become a panel portion of one organic EL display device.

Subsequently, the substrate 53 having been formed on the hole transport layer 55 is carried into the second film forming chamber 303. The substrate 53 and the mask are aligned, the substrate is placed on the mask, and the red layer 56R is formed on the hole transport layer 55 at a portion where the element of the substrate 53 emitting red light (a region where a red subpixel is formed) is arranged. Here, the mask used in the second film formation chamber is a high-definition mask in which openings are formed only in a plurality of regions of a red subpixel out of a plurality of regions on the substrate 53 serving as subpixels of the organic EL display device. Thus, the red layer 56R including the red light emitting layer is formed only in the region of the sub-pixel to be red out of the regions to be the plurality of sub-pixels on the substrate 53. In other words, the red layer 56R is not formed in the region of the plurality of sub-pixels on the substrate 53 that is the blue sub-pixel region and the green sub-pixel region, and is selectively formed in the region of the red sub-pixel region.

Similarly to the formation of the red layer 56R, the green layer 56G is formed in the third film forming chamber 303, and the blue layer 56B is formed in the fourth film forming chamber 303. After the formation of the red, green, and blue color layers 56R, 56G, and 56B is completed, the electron transport layer 57 is formed in the entire display region 51 in the fifth film formation chamber 303. The electron transport layer 57 is formed as a common layer in the

layers

56R, 56G, and 56B of the three colors.

The substrate on which the electron transport layer 57 has been formed is moved to the sixth film forming chamber 303, and the second electrode 58 is formed. In the present embodiment, each layer is formed in the first to sixth film forming chambers 303 to 303 by vacuum deposition. However, the present invention is not limited to this, and for example, film formation may be performed by sputtering for film formation of the second electrode 58 in the sixth film formation chamber 303. After that, the substrate on which the second electrode 58 is formed is moved to a sealing device, and the protective layer 60 is formed by plasma CVD (sealing step), thereby completing the organic EL display device 50. Here, the protective layer 60 is formed by a CVD method, but the present invention is not limited thereto, and may be formed by an ALD method or an inkjet method.

Here, film formation in the first to sixth film formation chambers 303 to 303 is performed using a mask in which openings corresponding to the patterns of the respective layers to be formed are formed. In the film formation, after the relative position adjustment (alignment) of the substrate 53 and the mask is performed, the substrate 53 is placed on the mask to form a film. Here, the alignment process performed in each film forming chamber is performed as in the above-described alignment process.

< other embodiments >

In the above embodiment, the initialization of the clamping voltage V is performed in S10 or S20, but this step can be omitted. For example, when the substrates 100 are processed in a batch unit, the clamping voltage V in the previous batch may be used as the initial value of the clamping voltage V.

Alternatively, when the substrates 100 are processed in batch units, the process itself of < process example 1 > or < process example 2 > described above may be omitted when the substrates 100 in the next batch have the same conductive film pattern density as the substrates 100 in the previous batch. In this case, for example, the process of the film formation device 1 may be executed based on the set value of the adsorption voltage V or the start timing set in the process for the previous batch. Further, for example, the adsorption voltage V or the set value of the start timing in the subsequent lot may be set based on an average value of the set values from the initial lot to a plurality of lots (for example, 2 to 5 lots). Further, when the substrate 100 in the next lot has a different conductive film pattern density from the substrate 100 in the previous lot, the processes of < processing example 1 > and < processing example 2 > described above may be performed, and the set value of the chucking voltage V or the start timing may be set again.

In the above embodiment, the adsorption time T is determined based on the detection result of the detection unit 16 that detects the electrostatic capacitance of the electrode portion 151, but the adsorption time T may be determined by another method. For example, one or more touch sensors capable of detecting contact with the substrate 100 may be provided in the electrostatic chuck 15. The processing unit 141 may determine a time from the start of applying the voltage to the electrode unit 151 to the detection of the contact of the touch sensor with the substrate 100 as the adsorption time. For example, the touch sensor may be a mechanical sensor that has a contact that can advance and retreat in the suction direction of the substrate 100, and outputs a predetermined electrical signal by displacing the contact by contacting the contact with the substrate 100. This allows the adsorption time T to be determined with a simple configuration.

The suction time T may be determined based on a detection result of a distance measuring sensor or the like capable of optically detecting the distance to the substrate 100, for example. For example, such a distance measuring sensor may be provided below the electrostatic chuck 15, and the time from the start of applying the voltage to the electrostatic chuck 15 to the time when the distance between the substrate 100 and the distance measuring sensor becomes a stable value may be determined as the attraction time T.

In the above embodiment, the processing unit 141 of the control device 14 of the film formation apparatus 1 executes the processing of < processing example 1 > or < processing example 2 > described above. However, the host apparatus 300 or the like that collectively controls the production line of electronic devices may execute the processing of < processing example 1 > or < processing example 2 > described above. Alternatively, the processing of < processing example 1 > or < processing example 2 > described above may be executed by another device capable of communicating with the control device 14.

The present invention can also be realized by the following processing: a program for realizing one or more functions of the above embodiments is supplied to a system or an apparatus via a network or a storage medium, and the program is read and executed by one or more processors in a computer of the system or the apparatus. The present invention can also be realized by a circuit (for example, ASIC) that realizes one or more functions.

The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the claims are included to disclose the scope of the invention.

Claims

1. A control device for a film forming apparatus including an electrostatic chuck for attracting a substrate and a detection member for detecting the attraction of the electrostatic chuck to the substrate,

the control device is provided with:

an acquisition unit that acquires information relating to a chucking time from when a chucking voltage for chucking a substrate is applied to the electrostatic chuck until a detection result of the detection unit reaches a predetermined value; and

a voltage control unit that changes a magnitude of the chucking voltage applied to the electrostatic chuck based on the information acquired by the acquisition unit.

2. The control device according to claim 1,

the voltage control unit sets the chucking voltage at the time of chucking of the substrate to a second voltage different from the first voltage when the chucking time is out of a predetermined range in a case where the chucking voltage is set to the first voltage.

3. The control device according to claim 1,

the voltage control unit sets the chucking voltage to a voltage higher than the first voltage when the chucking time is equal to or longer than a first threshold value when the chucking voltage is set to the first voltage.

4. The control device according to claim 1,

the voltage control unit sets the chucking voltage to a voltage lower than the first voltage when the chucking time is equal to or less than a second threshold value when the chucking voltage is set to the first voltage.

5. The control device according to any one of claims 1 to 4,

the voltage control unit sets the chucking voltage for subsequent chucking of the substrate based on the chucking time for a predetermined number of substrates.

6. The control device according to any one of claims 1 to 4,

the detection means detects adsorption of the substrate at a plurality of positions of the electrostatic chuck,

the voltage control means changes the chucking voltage based on the chucking time determined from the detection results of chucking of the substrate at the plurality of positions.

7. The control device according to claim 6,

the electrostatic chuck comprises a plurality of electrode parts,

the voltage control means sets the chucking voltage for each of the electrode portions based on the chucking time determined from the detection result of chucking of the substrate at the plurality of positions.

8. The control device according to claim 6,

the electrostatic chuck includes a plurality of groups each having a plurality of electrode portions,

the voltage control means sets the chucking voltage for each of the groups based on the chucking time determined from the detection results of chucking of the substrate at the plurality of positions.

9. A control device for a film forming apparatus including an electrostatic chuck for attracting a substrate and a detection member for detecting the attraction of the electrostatic chuck to the substrate,

the control device is provided with:

a schedule control unit that controls a process schedule of the film deposition apparatus,

the schedule control unit changes a time from a start of application of the chucking voltage to the electrostatic chuck to a start timing of a process to be performed after chucking of the substrate with respect to one substrate, based on the information acquired by the acquisition unit.

10. The control device according to claim 9,

the schedule control unit sets the start timing of a process to be performed after the subsequent adsorption of the substrate to a second timing different from the first timing when the adsorption time is out of a predetermined range in a case where the start timing is set to the first timing.

11. The control device according to claim 9,

the schedule control unit sets the start timing of a process to be performed after the subsequent adsorption of the substrate later than a first timing when the adsorption time is equal to or longer than a third threshold while the start timing is set to the first timing.

12. The control device according to claim 9,

the schedule control means sets the start timing of a process to be performed after the subsequent adsorption of the substrate to be earlier than the first timing when the adsorption time is equal to or less than a fourth threshold value in a case where the start timing is set to the first timing.

13. The control device according to any one of claims 9 to 12,

the schedule control means sets the start timing of a process to be performed after the subsequent substrate is sucked, based on the suction time for a predetermined number of substrates.

14. The control device according to any one of claims 9 to 12,

the step performed after the adsorption of the substrate is an alignment step of performing alignment between the substrate adsorbed by the electrostatic chuck and a mask.

15. The control device according to any one of claims 9 to 12,

the schedule control means changes the start timing based on the adsorption time determined from the detection result of adsorption of the substrate at the plurality of positions.

16. A film forming apparatus is characterized in that,

the film forming apparatus includes:

an electrostatic chuck that adsorbs a substrate; and

a detection unit that detects adsorption of the substrate by the electrostatic chuck,

the film forming apparatus is controlled by the control apparatus according to any one of claims 1 to 15.

17. The film forming apparatus according to claim 16,

the detection means is an electrostatic capacitance sensor that detects an electrostatic capacitance between the substrate and the electrostatic chuck.

18. The film forming apparatus according to claim 17,

the film forming apparatus further includes a measuring unit that measures, as the adsorption time, a time from when the voltage for adsorption starts to be applied to the electrostatic chuck until the electrostatic capacitance becomes a stable value.

19. The film forming apparatus according to claim 16,

the detection member is a contact sensor that detects contact between a substrate and the electrostatic chuck.

20. A substrate suction method of a film forming apparatus including an electrostatic chuck for sucking a substrate and a detection member for detecting the suction of the substrate by the electrostatic chuck,

the substrate adsorption method includes:

an acquisition step of acquiring information on a chucking time from when a chucking voltage for chucking a substrate is applied to the electrostatic chuck until a detection result of the detection means reaches a predetermined value; and

and a voltage control step of changing a magnitude of the chucking voltage applied to the electrostatic chuck based on the information acquired in the acquisition step.

21. A method of manufacturing an electronic device, characterized in that,

the manufacturing method of the electronic device includes:

a substrate suction step of sucking a substrate to the electrostatic chuck by the substrate suction method according to claim 20;

an alignment step of performing alignment between the substrate adsorbed to the electrostatic chuck by the substrate adsorption step and a mask placed on a mask stage; and

and a film forming step of forming a film on the substrate through the mask.

22. A plan setting method for setting a process plan of a film forming apparatus including an electrostatic chuck for attracting a substrate and a detection member for detecting attraction of the substrate by the electrostatic chuck,

the plan setting method includes:

an acquisition step of acquiring information on a chucking time from application of a chucking voltage for chucking a substrate to the electrostatic chuck until a detection result of the detection means reaches a predetermined value; and

a plan setting step of setting a process plan of the film forming apparatus,

in the plan setting step, a time from a start of application of the chucking voltage to the electrostatic chuck to a start timing of a step performed after chucking of the substrate with respect to one substrate is changed based on the information acquired in the acquiring step.

23. A method of manufacturing an electronic device, characterized in that,

the manufacturing method of the electronic device includes:

a plan setting step of setting the start timing by the plan setting method according to claim 22;

an alignment step of aligning the substrate attracted to the electrostatic chuck and a mask placed on a mask stage at the start timing set in the plan setting step; and

and a film forming step of forming a film on the substrate through the mask.