JP7520106B2 - ディスプレイ用発光素子およびそれを有するディスプレイ装置 - Google Patents

ディスプレイ用発光素子およびそれを有するディスプレイ装置 Download PDF

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JP7520106B2
JP7520106B2 JP2022510821A JP2022510821A JP7520106B2 JP 7520106 B2 JP7520106 B2 JP 7520106B2 JP 2022510821 A JP2022510821 A JP 2022510821A JP 2022510821 A JP2022510821 A JP 2022510821A JP 7520106 B2 JP7520106 B2 JP 7520106B2
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Prior art keywords
led stack
light
led
layer
emitting element
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JP2022510821A
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Japanese (ja)
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JP2022545783A5 (https=
JP2022545783A (ja
Inventor
ヒョン チェ，ジョン
グン イ，ソム
ギュ ジャン，ソン
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Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Priority claimed from US16/940,394 external-priority patent/US11482566B2/en
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Publication of JP2022545783A5 publication Critical patent/JP2022545783A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2022510821A 2019-08-20 2020-07-31 ディスプレイ用発光素子およびそれを有するディスプレイ装置 Active JP7520106B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962889158P 2019-08-20 2019-08-20
US62/889,158 2019-08-20
US16/940,394 US11482566B2 (en) 2019-08-20 2020-07-28 Light emitting device for display and display apparatus having the same
US16/940,394 2020-07-28
PCT/KR2020/010104 WO2021033949A1 (ko) 2019-08-20 2020-07-31 디스플레이용 발광 소자 및 그것을 가지는 디스플레이 장치

Publications (3)

Publication Number Publication Date
JP2022545783A JP2022545783A (ja) 2022-10-31
JP2022545783A5 JP2022545783A5 (https=) 2023-08-07
JP7520106B2 true JP7520106B2 (ja) 2024-07-22

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JP2022510821A Active JP7520106B2 (ja) 2019-08-20 2020-07-31 ディスプレイ用発光素子およびそれを有するディスプレイ装置

Country Status (8)

Country Link
US (2) US12154934B2 (https=)
EP (1) EP4020552A4 (https=)
JP (1) JP7520106B2 (https=)
KR (1) KR20220048467A (https=)
CN (2) CN114303240A (https=)
BR (1) BR112022003052A2 (https=)
MX (1) MX2022001794A (https=)
MY (1) MY209643A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN214672619U (zh) * 2020-05-28 2021-11-09 首尔伟傲世有限公司 发光元件及具有该发光元件的显示装置
US12604563B2 (en) * 2022-04-25 2026-04-14 Seoul Viosys Co., Ltd. Light emitting device and light emitting module having the same
KR102822777B1 (ko) * 2022-12-15 2025-06-19 엘지전자 주식회사 발광 구조를 구비한 디스플레이 장치
WO2025255812A1 (en) * 2024-06-14 2025-12-18 Jade Bird Display (shanghai) Limited Micro led pixel and micro led display panel

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170288093A1 (en) 2016-04-04 2017-10-05 Samsung Electronics Co., Ltd. Led light source module and display device
US20190164944A1 (en) 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Led unit for display and display apparatus having the same

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RU2349989C1 (ru) 2007-07-03 2009-03-20 Самсунг Электро-Меканикс Ко., Лтд. Многоцветное светоизлучающее устройство с использованием микрорезонатора
US8058663B2 (en) 2007-09-26 2011-11-15 Iii-N Technology, Inc. Micro-emitter array based full-color micro-display
CN101821866B (zh) 2007-10-08 2012-05-23 3M创新有限公司 具有粘接的半导体波长转换器的发光二极管
US7732803B2 (en) * 2008-05-01 2010-06-08 Bridgelux, Inc. Light emitting device having stacked multiple LEDS
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
WO2018101616A1 (ko) 2016-11-30 2018-06-07 서울바이오시스주식회사 복수의 발광셀들을 가지는 발광 다이오드
KR102550007B1 (ko) 2016-11-30 2023-07-03 서울바이오시스 주식회사 복수의 발광셀들을 가지는 발광 다이오드
US10748881B2 (en) 2017-12-05 2020-08-18 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US11552057B2 (en) * 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11552061B2 (en) * 2017-12-22 2023-01-10 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US11482566B2 (en) * 2019-08-20 2022-10-25 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170288093A1 (en) 2016-04-04 2017-10-05 Samsung Electronics Co., Ltd. Led light source module and display device
US20190164944A1 (en) 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Led unit for display and display apparatus having the same
WO2019103577A1 (en) 2017-11-27 2019-05-31 Seoul Viosys Co., Ltd. Led unit for display and display apparatus having the same

Also Published As

Publication number Publication date
US20250056952A1 (en) 2025-02-13
KR20220048467A (ko) 2022-04-19
US12154934B2 (en) 2024-11-26
US20230037604A1 (en) 2023-02-09
CN212412081U (zh) 2021-01-26
EP4020552A4 (en) 2023-10-04
EP4020552A1 (en) 2022-06-29
BR112022003052A2 (pt) 2022-05-17
CN114303240A (zh) 2022-04-08
MX2022001794A (es) 2022-03-11
MY209643A (en) 2025-07-28
JP2022545783A (ja) 2022-10-31

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