JP7493250B2 - 画素、固体撮像装置及び画素の製造方法 - Google Patents

画素、固体撮像装置及び画素の製造方法 Download PDF

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Publication number
JP7493250B2
JP7493250B2 JP2021533975A JP2021533975A JP7493250B2 JP 7493250 B2 JP7493250 B2 JP 7493250B2 JP 2021533975 A JP2021533975 A JP 2021533975A JP 2021533975 A JP2021533975 A JP 2021533975A JP 7493250 B2 JP7493250 B2 JP 7493250B2
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light
region
pixel
conversion unit
photoelectric conversion
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JPWO2021015070A1 (https=
Inventor
信一 寺西
篤史 小野
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Shizuoka University NUC
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Shizuoka University NUC
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H04N23/21—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only from near infrared [NIR] radiation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2021533975A 2019-07-22 2020-07-15 画素、固体撮像装置及び画素の製造方法 Active JP7493250B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019134322 2019-07-22
JP2019134322 2019-07-22
JP2020018082 2020-02-05
JP2020018082 2020-02-05
PCT/JP2020/027504 WO2021015070A1 (ja) 2019-07-22 2020-07-15 画素、固体撮像装置及び画素の製造方法

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JPWO2021015070A1 JPWO2021015070A1 (https=) 2021-01-28
JP7493250B2 true JP7493250B2 (ja) 2024-05-31

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WO (1) WO2021015070A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509358A (ja) 2002-12-09 2006-03-16 クォンタム セミコンダクター リミテッド ライアビリティ カンパニー Ｃｍｏｓ画像センサー
JP2010263158A (ja) 2009-05-11 2010-11-18 Sony Corp ２次元固体撮像装置、及び、２次元固体撮像装置における偏光光データ処理方法
JP2015232599A (ja) 2014-06-09 2015-12-24 ソニー株式会社 光学フィルタ、固体撮像装置、および電子機器
WO2016136502A1 (ja) 2015-02-26 2016-09-01 ソニー株式会社 固体撮像素子、および電子装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064703A (ja) * 2010-09-15 2012-03-29 Sony Corp 撮像素子および撮像装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509358A (ja) 2002-12-09 2006-03-16 クォンタム セミコンダクター リミテッド ライアビリティ カンパニー Ｃｍｏｓ画像センサー
JP2010263158A (ja) 2009-05-11 2010-11-18 Sony Corp ２次元固体撮像装置、及び、２次元固体撮像装置における偏光光データ処理方法
JP2015232599A (ja) 2014-06-09 2015-12-24 ソニー株式会社 光学フィルタ、固体撮像装置、および電子機器
WO2016136502A1 (ja) 2015-02-26 2016-09-01 ソニー株式会社 固体撮像素子、および電子装置

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JPWO2021015070A1 (https=) 2021-01-28

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