JPWO2021015070A1 - - Google Patents
Info
- Publication number
- JPWO2021015070A1 JPWO2021015070A1 JP2021533975A JP2021533975A JPWO2021015070A1 JP WO2021015070 A1 JPWO2021015070 A1 JP WO2021015070A1 JP 2021533975 A JP2021533975 A JP 2021533975A JP 2021533975 A JP2021533975 A JP 2021533975A JP WO2021015070 A1 JPWO2021015070 A1 JP WO2021015070A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
- H04N23/21—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only from near infrared [NIR] radiation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019134322 | 2019-07-22 | ||
| JP2019134322 | 2019-07-22 | ||
| JP2020018082 | 2020-02-05 | ||
| JP2020018082 | 2020-02-05 | ||
| PCT/JP2020/027504 WO2021015070A1 (ja) | 2019-07-22 | 2020-07-15 | 画素、固体撮像装置及び画素の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021015070A1 true JPWO2021015070A1 (https=) | 2021-01-28 |
| JP7493250B2 JP7493250B2 (ja) | 2024-05-31 |
Family
ID=74193473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021533975A Active JP7493250B2 (ja) | 2019-07-22 | 2020-07-15 | 画素、固体撮像装置及び画素の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7493250B2 (https=) |
| WO (1) | WO2021015070A1 (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006509358A (ja) * | 2002-12-09 | 2006-03-16 | クォンタム セミコンダクター リミテッド ライアビリティ カンパニー | Ｃｍｏｓ画像センサー |
| JP2010263158A (ja) * | 2009-05-11 | 2010-11-18 | Sony Corp | ２次元固体撮像装置、及び、２次元固体撮像装置における偏光光データ処理方法 |
| JP2012064703A (ja) * | 2010-09-15 | 2012-03-29 | Sony Corp | 撮像素子および撮像装置 |
| JP2015232599A (ja) * | 2014-06-09 | 2015-12-24 | ソニー株式会社 | 光学フィルタ、固体撮像装置、および電子機器 |
| WO2016136502A1 (ja) * | 2015-02-26 | 2016-09-01 | ソニー株式会社 | 固体撮像素子、および電子装置 |
-
2020
- 2020-07-15 JP JP2021533975A patent/JP7493250B2/ja active Active
- 2020-07-15 WO PCT/JP2020/027504 patent/WO2021015070A1/ja not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006509358A (ja) * | 2002-12-09 | 2006-03-16 | クォンタム セミコンダクター リミテッド ライアビリティ カンパニー | Ｃｍｏｓ画像センサー |
| JP2010263158A (ja) * | 2009-05-11 | 2010-11-18 | Sony Corp | ２次元固体撮像装置、及び、２次元固体撮像装置における偏光光データ処理方法 |
| JP2012064703A (ja) * | 2010-09-15 | 2012-03-29 | Sony Corp | 撮像素子および撮像装置 |
| JP2015232599A (ja) * | 2014-06-09 | 2015-12-24 | ソニー株式会社 | 光学フィルタ、固体撮像装置、および電子機器 |
| WO2016136502A1 (ja) * | 2015-02-26 | 2016-09-01 | ソニー株式会社 | 固体撮像素子、および電子装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021015070A1 (ja) | 2021-01-28 |
| JP7493250B2 (ja) | 2024-05-31 |
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