JP7487692B2 - 電界効果トランジスタ - Google Patents

電界効果トランジスタ Download PDF

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Publication number
JP7487692B2
JP7487692B2 JP2021039305A JP2021039305A JP7487692B2 JP 7487692 B2 JP7487692 B2 JP 7487692B2 JP 2021039305 A JP2021039305 A JP 2021039305A JP 2021039305 A JP2021039305 A JP 2021039305A JP 7487692 B2 JP7487692 B2 JP 7487692B2
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JP
Japan
Prior art keywords
trench
layer
body layer
insulating film
contact
Prior art date
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Active
Application number
JP2021039305A
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English (en)
Japanese (ja)
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JP2022139077A5 (enExample
JP2022139077A (ja
Inventor
秀史 高谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2021039305A priority Critical patent/JP7487692B2/ja
Priority to PCT/JP2021/037474 priority patent/WO2022190444A1/ja
Priority to CN202180095363.6A priority patent/CN116964753A/zh
Publication of JP2022139077A publication Critical patent/JP2022139077A/ja
Publication of JP2022139077A5 publication Critical patent/JP2022139077A5/ja
Priority to US18/358,992 priority patent/US20230369484A1/en
Application granted granted Critical
Publication of JP7487692B2 publication Critical patent/JP7487692B2/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2021039305A 2021-03-11 2021-03-11 電界効果トランジスタ Active JP7487692B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021039305A JP7487692B2 (ja) 2021-03-11 2021-03-11 電界効果トランジスタ
PCT/JP2021/037474 WO2022190444A1 (ja) 2021-03-11 2021-10-08 電界効果トランジスタ
CN202180095363.6A CN116964753A (zh) 2021-03-11 2021-10-08 场效应晶体管
US18/358,992 US20230369484A1 (en) 2021-03-11 2023-07-26 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021039305A JP7487692B2 (ja) 2021-03-11 2021-03-11 電界効果トランジスタ

Publications (3)

Publication Number Publication Date
JP2022139077A JP2022139077A (ja) 2022-09-26
JP2022139077A5 JP2022139077A5 (enExample) 2023-02-09
JP7487692B2 true JP7487692B2 (ja) 2024-05-21

Family

ID=83227742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021039305A Active JP7487692B2 (ja) 2021-03-11 2021-03-11 電界効果トランジスタ

Country Status (4)

Country Link
US (1) US20230369484A1 (enExample)
JP (1) JP7487692B2 (enExample)
CN (1) CN116964753A (enExample)
WO (1) WO2022190444A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7613570B2 (ja) * 2021-05-11 2025-01-15 富士電機株式会社 半導体装置
CN120693985A (zh) * 2023-02-17 2025-09-23 株式会社电装 开关元件
WO2025084070A1 (ja) * 2023-10-16 2025-04-24 ローム株式会社 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012169386A (ja) 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2012169384A (ja) 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2014017469A (ja) 2012-06-13 2014-01-30 Denso Corp 炭化珪素半導体装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018060943A (ja) * 2016-10-06 2018-04-12 トヨタ自動車株式会社 スイッチング素子
JP7057555B2 (ja) * 2017-11-29 2022-04-20 国立研究開発法人産業技術総合研究所 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012169386A (ja) 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2012169384A (ja) 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2014017469A (ja) 2012-06-13 2014-01-30 Denso Corp 炭化珪素半導体装置およびその製造方法

Also Published As

Publication number Publication date
WO2022190444A1 (ja) 2022-09-15
CN116964753A (zh) 2023-10-27
JP2022139077A (ja) 2022-09-26
US20230369484A1 (en) 2023-11-16

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