JP7486670B2 - 圧電素子アッセンブリ及びその製造方法 - Google Patents

圧電素子アッセンブリ及びその製造方法 Download PDF

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Publication number
JP7486670B2
JP7486670B2 JP2023531006A JP2023531006A JP7486670B2 JP 7486670 B2 JP7486670 B2 JP 7486670B2 JP 2023531006 A JP2023531006 A JP 2023531006A JP 2023531006 A JP2023531006 A JP 2023531006A JP 7486670 B2 JP7486670 B2 JP 7486670B2
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Japan
Prior art keywords
piezoelectric element
electrode
internal electrode
electrode terminal
wiring
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Active
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JP2023531006A
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English (en)
Japanese (ja)
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JPWO2023053160A1 (https=
JPWO2023053160A5 (https=
Inventor
知 高杉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suncall Corp
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Suncall Corp
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Publication of JPWO2023053160A5 publication Critical patent/JPWO2023053160A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H10N30/067—Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H10N30/063—Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
    • H10N30/874—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices embedded within piezoelectric or electrostrictive material, e.g. via connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
JP2023531006A 2021-09-28 2021-09-28 圧電素子アッセンブリ及びその製造方法 Active JP7486670B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/035501 WO2023053160A1 (ja) 2021-09-28 2021-09-28 圧電素子アッセンブリ及びその製造方法

Publications (3)

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JPWO2023053160A1 JPWO2023053160A1 (https=) 2023-04-06
JPWO2023053160A5 JPWO2023053160A5 (https=) 2023-09-06
JP7486670B2 true JP7486670B2 (ja) 2024-05-17

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JP2023531006A Active JP7486670B2 (ja) 2021-09-28 2021-09-28 圧電素子アッセンブリ及びその製造方法

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US (1) US20250204257A1 (https=)
JP (1) JP7486670B2 (https=)
WO (1) WO2023053160A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4424430A3 (en) * 2020-01-30 2024-11-13 Suncall Corporation Ultrasonic transducer and method for manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006060281A (ja) 2004-08-17 2006-03-02 Seiko Epson Corp 圧電発振器
JP2018051903A (ja) 2016-09-28 2018-04-05 ブラザー工業株式会社 アクチュエータ装置、及び、液体吐出装置
WO2019234854A1 (ja) 2018-06-06 2019-12-12 サンコール株式会社 超音波トランスデューサー及びその製造方法
WO2021152776A1 (ja) 2020-01-30 2021-08-05 サンコール株式会社 超音波トランスデューサー及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006060281A (ja) 2004-08-17 2006-03-02 Seiko Epson Corp 圧電発振器
JP2018051903A (ja) 2016-09-28 2018-04-05 ブラザー工業株式会社 アクチュエータ装置、及び、液体吐出装置
WO2019234854A1 (ja) 2018-06-06 2019-12-12 サンコール株式会社 超音波トランスデューサー及びその製造方法
WO2021152776A1 (ja) 2020-01-30 2021-08-05 サンコール株式会社 超音波トランスデューサー及びその製造方法

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WO2023053160A1 (ja) 2023-04-06
JPWO2023053160A1 (https=) 2023-04-06
US20250204257A1 (en) 2025-06-19

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