JP7481937B2 - 平坦化方法、平坦化装置及び物品製造方法 - Google Patents

平坦化方法、平坦化装置及び物品製造方法 Download PDF

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Publication number
JP7481937B2
JP7481937B2 JP2020126728A JP2020126728A JP7481937B2 JP 7481937 B2 JP7481937 B2 JP 7481937B2 JP 2020126728 A JP2020126728 A JP 2020126728A JP 2020126728 A JP2020126728 A JP 2020126728A JP 7481937 B2 JP7481937 B2 JP 7481937B2
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chuck
superstrate
zones
substrate
lands
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Japanese (ja)
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JP2021034723A (ja
JP2021034723A5 (enExample
Inventor
ビュン－ジン チョイ
ジェイ バーメスバーガー セス
イム セヒュン
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
  • Auxiliary Devices For And Details Of Packaging Control (AREA)
JP2020126728A 2019-08-15 2020-07-27 平坦化方法、平坦化装置及び物品製造方法 Active JP7481937B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/542,062 US11145535B2 (en) 2019-08-15 2019-08-15 Planarization process, apparatus and method of manufacturing an article
US16/542,062 2019-08-15

Publications (3)

Publication Number Publication Date
JP2021034723A JP2021034723A (ja) 2021-03-01
JP2021034723A5 JP2021034723A5 (enExample) 2023-06-01
JP7481937B2 true JP7481937B2 (ja) 2024-05-13

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JP2020126728A Active JP7481937B2 (ja) 2019-08-15 2020-07-27 平坦化方法、平坦化装置及び物品製造方法

Country Status (4)

Country Link
US (1) US11145535B2 (enExample)
JP (1) JP7481937B2 (enExample)
KR (1) KR102815060B1 (enExample)
TW (1) TWI772838B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11875967B2 (en) * 2020-05-21 2024-01-16 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11538714B2 (en) 2020-05-21 2022-12-27 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
KR20220124090A (ko) * 2021-03-02 2022-09-13 캐논 가부시끼가이샤 척, 기판 유지장치, 기판 처리장치, 및 물품의 제조방법
JP7778482B2 (ja) * 2021-03-02 2025-12-02 キヤノン株式会社 チャック、基板保持装置、基板処理装置、及び物品の製造方法
CN115008025B (zh) * 2021-03-04 2024-05-03 鑫天虹(厦门)科技有限公司 基板及半导体磊晶结构的雷射分离方法
US12027373B2 (en) 2021-05-28 2024-07-02 Canon Kabushiki Kaisha Planarization process, planarization system, and method of manufacturing an article
US12138747B2 (en) 2022-05-19 2024-11-12 Canon Kabushiki Kaisha Planarization process, apparatus and method of manufacturing an article
WO2024049719A2 (en) * 2022-08-29 2024-03-07 Rajeev Bajaj Advanced fluid delivery

Citations (2)

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JP2012532448A (ja) 2009-07-02 2012-12-13 モレキュラー・インプリンツ・インコーポレーテッド 引っ込んだ支持特徴部を有するチャッキングシステム
JP2017162987A (ja) 2016-03-09 2017-09-14 日本特殊陶業株式会社 真空吸着部材および真空吸着方法

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JP3106499B2 (ja) * 1990-11-30 2000-11-06 株式会社ニコン 露光装置
JPH0851143A (ja) * 1992-07-20 1996-02-20 Nikon Corp 基板保持装置
US5923408A (en) * 1996-01-31 1999-07-13 Canon Kabushiki Kaisha Substrate holding system and exposure apparatus using the same
JPH10242255A (ja) * 1997-02-28 1998-09-11 Kyocera Corp 真空吸着装置
TW524873B (en) 1997-07-11 2003-03-21 Applied Materials Inc Improved substrate supporting apparatus and processing chamber
US7790231B2 (en) * 2003-07-10 2010-09-07 Brewer Science Inc. Automated process and apparatus for planarization of topographical surfaces
JP3894562B2 (ja) * 2003-10-01 2007-03-22 キヤノン株式会社 基板吸着装置、露光装置およびデバイス製造方法
JP4739039B2 (ja) * 2006-01-31 2011-08-03 住友大阪セメント株式会社 静電チャック装置
US8336188B2 (en) * 2008-07-17 2012-12-25 Formfactor, Inc. Thin wafer chuck
JP2010067796A (ja) * 2008-09-11 2010-03-25 Canon Inc インプリント装置
WO2012083578A1 (zh) 2010-12-22 2012-06-28 青岛理工大学 整片晶圆纳米压印的装置和方法.
USRE48429E1 (en) * 2013-05-23 2021-02-09 Nikon Corporation Substrate holding method, substrate holding apparatus, exposure apparatus and exposure method
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JP2017162987A (ja) 2016-03-09 2017-09-14 日本特殊陶業株式会社 真空吸着部材および真空吸着方法

Also Published As

Publication number Publication date
KR20210020795A (ko) 2021-02-24
US11145535B2 (en) 2021-10-12
JP2021034723A (ja) 2021-03-01
TW202109735A (zh) 2021-03-01
US20210050245A1 (en) 2021-02-18
TWI772838B (zh) 2022-08-01
KR102815060B1 (ko) 2025-06-02

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