JP7475154B2 - 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 - Google Patents
反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 Download PDFInfo
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- JP7475154B2 JP7475154B2 JP2020022459A JP2020022459A JP7475154B2 JP 7475154 B2 JP7475154 B2 JP 7475154B2 JP 2020022459 A JP2020022459 A JP 2020022459A JP 2020022459 A JP2020022459 A JP 2020022459A JP 7475154 B2 JP7475154 B2 JP 7475154B2
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Landscapes
- Physical Vapour Deposition (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020022459A JP7475154B2 (ja) | 2020-02-13 | 2020-02-13 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
| JP2024066024A JP7676624B2 (ja) | 2020-02-13 | 2024-04-16 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
| JP2025075419A JP2025105890A (ja) | 2020-02-13 | 2025-04-30 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2020022459A JP7475154B2 (ja) | 2020-02-13 | 2020-02-13 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
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| JP2024066024A Division JP7676624B2 (ja) | 2020-02-13 | 2024-04-16 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
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| JP2021128247A JP2021128247A (ja) | 2021-09-02 |
| JP2021128247A5 JP2021128247A5 (enExample) | 2023-01-25 |
| JP7475154B2 true JP7475154B2 (ja) | 2024-04-26 |
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| JP2020022459A Active JP7475154B2 (ja) | 2020-02-13 | 2020-02-13 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
| JP2024066024A Active JP7676624B2 (ja) | 2020-02-13 | 2024-04-16 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
| JP2025075419A Pending JP2025105890A (ja) | 2020-02-13 | 2025-04-30 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
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| JP2025075419A Pending JP2025105890A (ja) | 2020-02-13 | 2025-04-30 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7315128B1 (ja) * | 2021-09-28 | 2023-07-26 | Agc株式会社 | Euvリソグラフィ用反射型マスクブランクおよび導電膜付き基板 |
| KR102882943B1 (ko) * | 2022-04-01 | 2025-11-07 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| WO2024005038A1 (ja) * | 2022-06-28 | 2024-01-04 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| KR102852320B1 (ko) | 2022-07-05 | 2025-09-01 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법, 및 반사형 마스크의 제조 방법 |
| KR102762202B1 (ko) | 2022-07-05 | 2025-02-07 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| KR20240007530A (ko) * | 2022-07-08 | 2024-01-16 | 엘지이노텍 주식회사 | 포토 마스크 |
| JP2024119143A (ja) * | 2023-02-22 | 2024-09-03 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
| KR102801300B1 (ko) * | 2023-03-17 | 2025-04-30 | 에이지씨 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 및 도전막 구비 기판 |
| WO2024195577A1 (ja) * | 2023-03-17 | 2024-09-26 | Agc株式会社 | Euvリソグラフィ用反射型マスクブランクおよび導電膜付き基板 |
| JP2024142177A (ja) * | 2023-03-29 | 2024-10-10 | Hoya株式会社 | 反射型マスクブランク及び反射型マスク、並びに反射型マスク及び半導体装置の製造方法 |
| WO2025033114A1 (ja) * | 2023-08-09 | 2025-02-13 | Agc株式会社 | 光学式検査装置の校正方法、及び反射型マスクブランクの製造方法 |
| JP2025095450A (ja) * | 2023-12-14 | 2025-06-26 | Hoya株式会社 | 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、および半導体装置の製造方法 |
| WO2025239181A1 (ja) * | 2024-05-16 | 2025-11-20 | Agc株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクの製造方法 |
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| JP6125772B2 (ja) * | 2011-09-28 | 2017-05-10 | Hoya株式会社 | 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法 |
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| WO2011004850A1 (ja) | 2009-07-08 | 2011-01-13 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク |
| JP2015008265A (ja) | 2013-05-31 | 2015-01-15 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク |
| JP2015122468A (ja) | 2013-12-25 | 2015-07-02 | Hoya株式会社 | 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| US20190146325A1 (en) | 2017-11-14 | 2019-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet mask with reduced wafer neighboring effect and method of manufacturing the same |
| JP2018173664A (ja) | 2018-08-01 | 2018-11-08 | Hoya株式会社 | 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法 |
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