JP7461351B2 - Ｃｖｄリアクタ用のガス入口装置 - Google Patents

Ｃｖｄリアクタ用のガス入口装置 Download PDF

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Publication number
JP7461351B2
JP7461351B2 JP2021530047A JP2021530047A JP7461351B2 JP 7461351 B2 JP7461351 B2 JP 7461351B2 JP 2021530047 A JP2021530047 A JP 2021530047A JP 2021530047 A JP2021530047 A JP 2021530047A JP 7461351 B2 JP7461351 B2 JP 7461351B2
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gas
gas distribution
gas inlet
wall
distribution
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Japanese (ja)
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JP2022510900A (ja
Inventor
コールベルク、マルセル
ルダ・イ・ヴィット、フランシスコ
ムキノビッチ、メリム
プフィシュターラー、ミケ
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アイクストロン、エスイー
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2021530047A 2018-11-28 2019-11-27 Ｃｖｄリアクタ用のガス入口装置 Active JP7461351B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024045128A JP2024079752A (ja) 2018-11-28 2024-03-21 Ｃｖｄリアクタ用のガス入口装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102018130139.1 2018-11-28
DE102018130139.1A DE102018130139A1 (de) 2018-11-28 2018-11-28 Gaseinlassvorrichtung für einen CVD-Reaktor
PCT/EP2019/082679 WO2020109361A2 (fr) 2018-11-28 2019-11-27 Dispositif d'entrée de gaz pour un réacteur cvd

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024045128A Division JP2024079752A (ja) 2018-11-28 2024-03-21 Ｃｖｄリアクタ用のガス入口装置

Publications (2)

Publication Number Publication Date
JP2022510900A JP2022510900A (ja) 2022-01-28
JP7461351B2 true JP7461351B2 (ja) 2024-04-03

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JP2021530047A Active JP7461351B2 (ja) 2018-11-28 2019-11-27 Ｃｖｄリアクタ用のガス入口装置
JP2024045128A Pending JP2024079752A (ja) 2018-11-28 2024-03-21 Ｃｖｄリアクタ用のガス入口装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024045128A Pending JP2024079752A (ja) 2018-11-28 2024-03-21 Ｃｖｄリアクタ用のガス入口装置

Country Status (7)

Country Link
EP (1) EP3887569A2 (fr)
JP (2) JP7461351B2 (fr)
KR (1) KR20210094019A (fr)
CN (1) CN113330142A (fr)
DE (1) DE102018130139A1 (fr)
TW (1) TW202035777A (fr)
WO (1) WO2020109361A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019133023A1 (de) * 2019-12-04 2021-06-10 Aixtron Se Gaseinlassvorrichtung für einen CVD-Reaktor
DE102021103245A1 (de) * 2021-02-11 2022-08-11 Aixtron Se CVD-Reaktor mit einem in einer Vorlaufzone ansteigenden Prozesskammerboden
DE102021103368A1 (de) 2021-02-12 2022-08-18 Aixtron Se CVD-Reaktor mit einem ein Gaseinlassorgan umgebenden Temperrierring
CN115852343A (zh) * 2021-11-24 2023-03-28 无锡先为科技有限公司 一种进气分配机构及具有其的cvd反应设备
CN114318300B (zh) * 2021-12-30 2024-05-10 拓荆科技股份有限公司 一种半导体加工设备及其反应腔室、工艺管路穿腔模块
CN117418218A (zh) * 2023-12-19 2024-01-19 北京北方华创微电子装备有限公司 进气组件、进气装置及半导体工艺腔室

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012513669A (ja) 2008-12-23 2012-06-14 アイクストロン、エスイー 円筒状のガス入口部品を有するｍｏｃｖｄ反応装置
DE102014104218A1 (de) 2014-03-26 2015-10-01 Aixtron Se CVD-Reaktor mit Vorlaufzonen-Temperaturregelung

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW356554B (en) * 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
DE10029110B4 (de) 1999-06-15 2006-05-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren für die Materialbearbeitung und Verwendung desselben
US6793966B2 (en) * 2001-09-10 2004-09-21 Howmet Research Corporation Chemical vapor deposition apparatus and method
DE10247921A1 (de) * 2002-10-10 2004-04-22 Aixtron Ag Hydrid VPE Reaktor
WO2009049020A2 (fr) * 2007-10-11 2009-04-16 Valence Process Equipment, Inc. Réacteur de dépôt chimique en phase vapeur
KR101004822B1 (ko) * 2008-04-18 2010-12-28 삼성엘이디 주식회사 화학 기상 증착 장치
CN102776489B (zh) * 2011-05-09 2014-08-27 北京北方微电子基地设备工艺研究中心有限责任公司 进气环、进气组件、工艺腔装置和cvd设备
DE102011056589A1 (de) * 2011-07-12 2013-01-17 Aixtron Se Gaseinlassorgan eines CVD-Reaktors
DE102013014069B3 (de) 2013-08-22 2014-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Laserbearbeitung eines Werkstücks mit polierter Oberfläche und Verwendung dieses Verfahrens
CN105331953B (zh) * 2014-07-23 2019-04-23 北京北方华创微电子装备有限公司 进气装置以及半导体加工设备
CN106894001B (zh) * 2015-12-17 2019-04-12 杨永亮 复合式匀气装置
DE102017100725A1 (de) * 2016-09-09 2018-03-15 Aixtron Se CVD-Reaktor und Verfahren zum Reinigen eines CVD-Reaktors
ES2763387T3 (es) * 2016-10-25 2020-05-28 Werrta Gmbh Cabezal de pulverización y procedimiento para su producción
DE202017002851U1 (de) 2017-05-30 2017-06-27 WERRTA GmbH i. G. Düsenkörper, insbesondere für Sprühköpfe von Sprühdosen
DE202017005165U1 (de) * 2017-10-06 2017-10-18 WERRTA GmbH Düsen- und Zerstäubungstechnik Düsenkörper
DE102018202687A1 (de) 2018-02-22 2018-05-03 Carl Zeiss Smt Gmbh Herstellungsverfahren für Komponenten einer Projektionsbelichtungsanlage für die Halbleiterlithographie und Projektionsbelichtungsanlage

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012513669A (ja) 2008-12-23 2012-06-14 アイクストロン、エスイー 円筒状のガス入口部品を有するｍｏｃｖｄ反応装置
DE102014104218A1 (de) 2014-03-26 2015-10-01 Aixtron Se CVD-Reaktor mit Vorlaufzonen-Temperaturregelung

Also Published As

Publication number Publication date
KR20210094019A (ko) 2021-07-28
DE102018130139A1 (de) 2020-05-28
EP3887569A2 (fr) 2021-10-06
JP2022510900A (ja) 2022-01-28
WO2020109361A2 (fr) 2020-06-04
TW202035777A (zh) 2020-10-01
CN113330142A (zh) 2021-08-31
WO2020109361A3 (fr) 2020-09-03
JP2024079752A (ja) 2024-06-11

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