EP3887569A2 - Dispositif d'entrée de gaz pour un réacteur cvd - Google Patents

Dispositif d'entrée de gaz pour un réacteur cvd

Info

Publication number
EP3887569A2
EP3887569A2 EP19816554.0A EP19816554A EP3887569A2 EP 3887569 A2 EP3887569 A2 EP 3887569A2 EP 19816554 A EP19816554 A EP 19816554A EP 3887569 A2 EP3887569 A2 EP 3887569A2
Authority
EP
European Patent Office
Prior art keywords
gas
gas distribution
gas inlet
section
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19816554.0A
Other languages
German (de)
English (en)
Inventor
Marcel Kollberg
Francisco Ruda Y Witt
Merim Mukinovic
Mike PFISTERER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of EP3887569A2 publication Critical patent/EP3887569A2/fr
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Definitions

  • the invention relates to a gas inlet device for a CVD reactor with a gas inlet member that can be fastened to a fastening section having a gas supply line, with a plurality of gas distribution levels arranged one above the other, each having a gas distribution wall with gas outlet openings, which are connected to a gas distribution chamber surrounded by the gas distribution wall is, a gas inlet channel opening into the gas distribution chamber and the gas distribution chambers of the gas distribution levels being separated from one another by partition plates, the gas inlet channels being arranged in particular in a columnar central section of the gas inlet member.
  • the invention also relates to a CV inlet reactor provided with such a gas inlet device.
  • a gas inlet element made of quartz is described in DE 10 2008 055 582 A1.
  • the gas inlet element described there has a central body which is arranged around a figure axis of the gas inlet element.
  • In the central region of the gas inlet member there are a plurality of gas inlet channels arranged concentrically to one another, which open into openings that extend over an entire circumference.
  • gas distribution chambers surrounding the central section are connected in a ring, which are separated by dividing floors into a plurality of gas distribution levels arranged one above the other.
  • each of the gas distribution chambers is surrounded by a gas distribution wall which contains a large number of gas
  • a gas distribution wall which contains a large number of gas
  • An individual process gas can be fed into each of the several gas distribution chambers.
  • the different process gases can flow separately from one another at different heights into a process chamber adjoining the gas inlet element.
  • substrates are placed on a susceptor heated from below, which can be coated with a MOCVD process with III-V layers or with IV layers or with II-VI layers.
  • a quartz blank with a polished surface is first treated with a laser beam.
  • the laser beam generates ultrashort pulses and is focused.
  • the focus is moved in a writing movement, for example line by line, through the volume of the quartz blank.
  • the laser beam reaches an intensity above a threshold intensity, at which material conversion takes place in the quartz material.
  • the converted material can then be removed with a fluid etchant, for example potassium hydroxide solution. It is known from the prior art to use this method to produce liquid channels for nozzle bodies of spray heads or spray cans.
  • the invention has for its object to further develop a gas inlet member of the type described in the use advantageous, in particular it is provided to design the gas inlet member in such a way that it is easier to handle and further design such that it is technically easier to manufacture and assemble . Furthermore, a method is to be specified who can be used to implement designs of gas inlet organs that have not been able to be manufactured to date.
  • At least one of the preferably several gas distribution levels arranged one above the other has a flow barrier.
  • the flow barrier can extend through the gas distribution chamber such that the flow barrier divides the gas distribution chamber into an upstream section, which adjoins the mouth of the gas inlet channel, and a downstream section.
  • the downstream section can adjoin another flow barrier.
  • the downstream section can also adjoin the gas distribution wall.
  • the flow barrier surrounds a central section, which has the mouth of the gas inlet channel, before being given a ring and particularly preferably a ring.
  • the flow barrier can also directly adjoin the gas distribution wall.
  • the flow barrier has gas passage channels which open into the gas passage holes in the gas distribution wall.
  • the gas passage channels have a smaller cross-sectional area than the gas passage bore.
  • the gas passage channels can be gas passage holes through which the process gas can flow from the upstream section of the gas distribution chamber into the downstream section of the gas distribution chamber.
  • the flow barrier forms a pressure barrier, so that a higher gas pressure is present on the upstream side of the flow barrier than on the downstream side of the flow barrier.
  • the gas passage openings are preferably arranged essentially in the same distribution on a gas outlet surface of the flow barrier.
  • the gas outlet surface of the flow barrier is preferably a peripheral surface and in particular a jacket surface of a cylinder.
  • the openings can have a diameter which is less than 0.1 mm, less than 0.2 mm, less than 0.5 mm, less than 1 mm, less than 2 mm or less than 3 mm.
  • the gas passage channels of the flow barrier can also be gaps.
  • each of the superimposed gas distribution levels is formed by a disc-shaped gas distribution section, the gas distribution section preferably being formed by a gas distribution body / section.
  • the gas distribution section can have a circular disk shape.
  • the gas distribution wall can be connected to the separating floor in a material-uniform or integral manner, the separating floor having a circular disk shape.
  • a central section can emerge from the partition.
  • the central section is in particular base-shaped and forms the mouth of the gas inlet channel opening into the gas distribution chamber.
  • the central section can have an upward-facing broad surface that extends in particular in one plane, an upper edge of the gas distribution wall also being able to extend in this plane of extension.
  • the gas distribution body / sections are in particular essentially designed identically.
  • the gas supply Partial bodies / sections can be stacked one on top of the other in such a way that the broad side surface of the central section of a lower gas distribution body / section lies flat against an underside of the partition of an upper gas distribution body / section.
  • an upward-facing upper side of the gas distribution wall rests sealingly on the underside of the partition, so that by placing at least two gas distribution bodies / sections, a gas distribution chamber is closed at the top and bottom by a partition.
  • the Gasverteilkam mern are preferably only open in a radial direction, the Gasver sub-chamber is open in the radial outward direction by means of the gas passage openings of the gas distribution wall and in the radial inward direction through the mouth of the gas inlet channel. It is further provided that at least some of the gas distribution bodies / sections have a passage opening in their central section. The passage opening is open to the upper broad side surface and to the underside of the separating bottom, so that the passage opening can connect an opening of a gas channel of a lower gas distribution body / section with a passage opening of an upper gas distribution body / section. A plurality of gas passage openings arranged one above the other thus form a gas inlet channel.
  • Another aspect of the invention relates to the arrangement of a central opening in the gas inlet element, which can be a flushing channel or a fastening opening for a fastening screw.
  • the fastening section can be fastened to a cover part of a reactor wall, the cover part being able to be separated from a lower part of the reactor housing for maintenance of the reactor.
  • the gas inlet element is removed from the process chamber raised.
  • the gas inlet member is fastened with a fastening opening of the gas inlet member penetrating fastening means on the fastening portion.
  • the gas distribution levels are formed from essentially disk-shaped gas distribution bodies / sections. Through the gas distribution body / sections, a fastening opening extends for receiving the fastening element, which can be a screw.
  • the fastening opening can be a central opening, which extends in a central section of the gas distribution body / sections.
  • the gas distribution body / sections can be integrally connected to one another. However, they can also be connected to one another using the same material.
  • the entire gas inlet element can thus be in several parts. But it can also be made in one piece.
  • the gas inlet member is preferably formed as a rotationally symmetrical body and has a central fastening opening, wherein a plurality of gas inlet channels can extend in the circumferential direction around the fastening opening, which open into different gas distribution levels.
  • decentralized, eccentric fastening openings can also be provided, with which the gas inlet element can be fastened to a fastening surface.
  • the decentralized mounting openings can in particular be arranged on a flange section which projects radially beyond the gas distribution wall. With this flange section, the gas inlet element can be attached to a carrier.
  • the gas inlet channels which are formed by a columnar central section of the gas inlet organ, do not run concentrically to one another, but are arranged separately from one another in a circumferential direction about an axis, which can be a figure axis are.
  • the gas inlet channels are inventively in a cross-sectional plane through the central section next to each other.
  • the mouths of different gas inlet channels are in The circumferential direction around the central section is offset from one another.
  • the orifices preferably point in a radial outward direction.
  • the central section is surrounded by at least one flow barrier, so that from the gas passage openings of the flow barrier which extend on a circumferential surface, a gas stream which is uniformly distributed in the circumferential direction can flow essentially and which flows into a downstream section of the Gas distribution chamber opens, from which the process gas can flow through the passage opening of the gas distribution wall into the process chamber.
  • the gas inlet element designed according to the invention as described above can consist of quartz. But it can also consist of metal, in particular special stainless steel. If the gas inlet member made of stainless steel or egg nem other metal, it is preferably made in several parts, where the individual parts of the gas inlet member are positively connected, for example by a threaded connection, or cohesively, for example by welding. The gas passage openings can be created by drilling. In a preferred embodiment of the invention, however, the gas inlet member is made of quartz. Here, too, it is possible to manufacture the individual components of the gas inlet element, i.e.
  • the gas inlet element consists of a plurality of gas distribution bodies, which are arranged one above the other in the form of disks and which can be formed in one piece. They can be machined from a disk-shaped quartz body, the SLE method (selective laser-induced etching) being used in particular for this purpose. In this method, a local material conversion of the homogeneous quartz starting body is carried out in a first process step.
  • an ultra-short pulse is pulsed Focused laser beam on a focus in the micrometer range, the focus being guided through the volume of the quartz body in writing by moving the laser beam relative to the quartz workpiece.
  • the laser beam focuses on a material conversion of the quartz material using a multi-photon process.
  • the material converted in this way can be removed in a second process step using an etching fluid.
  • the etching fluid is preferably a liquid, for example KOH.
  • the material-like disc-shaped gas distribution body / sections produced in this way can then be stacked on top of one another and, in particular, integrally connected to one another.
  • the gas distribution bodies are materially interconnected.
  • the previously described SLE method is also used to produce such a one-piece gas inlet element made from a uniform quartz blank. In this manufacturing process, a solid quartz body is first produced, which has a polished surface. The cavities are then exposed with a focused laser beam. The exposed material is then removed with the etching fluid. If the gas inlet member has the flange section described above, then the flange section can be connected to the gas distribution body in the same material and can also be produced using the SLE method.
  • FIG. 2 is a perspective view of five gas distribution bodies 4.1, 4.2,
  • FIG. 4 shows a second exemplary embodiment of a gas inlet element in a representation according to FIG. 1,
  • Fig. 7 shows a gas inlet member of a second embodiment of the
  • FIG. 8 shows a representation similar to FIG. 5 of a further exemplary embodiment of a gas inlet element
  • FIG. 9 shows a representation similar to FIG. 5 of a further exemplary embodiment of a gas inlet element.
  • FIG. 1 essentially shows the structure of a CVD reactor, in the process chamber 20 of which a CVD deposition process is carried out. can be performed, in which an in particular semiconducting layer can be deposited on a plurality of substrates 21.
  • the substrates 21 can consist of III-V compounds, silicon, sapphire or another suitable material.
  • One or more layers are deposited on the substrate, which may consist of elements from the IV main group, the III-V main group or the II-VI main group.
  • various process gases are introduced into the process chamber 20 by means of a carrier gas, for example Eh, or a noble gas, the process gases Hyd ride of the V main group, the IV main group or metal-organic compounds of the IV main group or the III- Main group can contain.
  • a susceptor 19 made of coated graphite or the like carrying the substrates 21 is brought from below to a process temperature with a heating device 24, so that the process gases fed into the center of the process chamber 20 by means of the gas inlet element are arranged on the surfaces of the circles around the center disassemble arranged substrates pyrolytically to form a single-crystal layer in particular.
  • the process gas which flows through the process chamber 20 in the radial direction, leaves the process chamber 20 through a gas outlet 22 surrounding the susceptor 19, which is connected to a vacuum pump, not shown.
  • the susceptor 19 rests on a support disc 32, which in turn is carried by a support tube 33. By means not shown, the susceptor 19 shown only schematically in FIG. 1 can be rotated about an axis.
  • the reference number 34 denotes a diffusion barrier between the heating device 24 and susceptor 19th
  • a process chamber cover 23 is located inside the reactor housing 1, through which a fastening section 3 extends into the process chamber 20. protrudes.
  • the gas inlet element 2 is fastened to the fastening section 3, which can consist of metal, in particular stainless steel.
  • the gas inlet member 2 can be made of metal, in particular stainless steel. However, the gas inlet member 2 is preferably made of quartz. The gas inlet member 2 can consist of metal, in particular a non-ferrous metal or stainless steel. Preferably, the gas inlet member 2 is made of a ceramic material and particularly preferably of quartz.
  • mounting holes are schematically shown, with which the gas inlet member 2 can be fastened by means of the mounting hole 35 through opening screws on a support.
  • a fastening section 3 which has a lower section 3 "and an upper section 3 '".
  • the section 3 " can also be a material-uniform component of the gas inlet element 2.
  • fastening screws are shown in the fastening openings 35, which are screwed into threaded holes in the upper section 3 '".
  • the fastening section 3 has a substantially flat fastening surface 35 which points downwards, that is to the susceptor 19.
  • a central area of the mounting surface 3 are five in the embodiment arranged around a center gas channels, each of which is connected to a gas inlet channel 9.1, 9.2, 9.3, 9.4, 9.5 of the gas inlet member 2.
  • the gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 surround a fastening opening 27 in which a nut 28 is rotatably mounted, which is supported on a spring 29.
  • the threaded shaft of a fastening screw 30 is screwed, de ren head is supported on a base plate 31, in particular made of quartz.
  • the base plate 31 which protrudes into a recess 25 of the susceptor 19, and the fastening surface 3 'of the fastening section 3 there are five disk-shaped gas distribution bodies 4.1, 4.2, 4.3, 4.4 and 4.5, which are essentially of the same design, but with regard to the Differentiate design of a central section 15 from each other.
  • the base plate 31 can also consist of a ceramic material, a non-ferrous metal and in particular stainless steel.
  • the gas distribution bodies 4.1 to 4.5 arranged one above the other serve different purposes. Through the two upper gas parts 4.1, 4.2, Ch can be fed into the process chamber 20 for cleaning the process chamber 20. Process gases can be fed into the process chamber 20 through the lower gas distribution bodies 4.3 to 4.5.
  • the gas distribution body / sections shown in Figure 2 4.1, 4.2, 4.3, 4.4 and 4.5 each have a circular disc-shaped base plate which forms a partition 11, by means of which gas distribution body 4.1, 4.2, 4.3, 4.4 and arranged one above the other 4.5 are separated. From the circular edge of a partition 11 extends an annular gas distribution wall 6, which has a plurality of evenly arranged gas through holes 13.
  • the gas passage bores 13 have a diameter which is smaller than 3 mm and in particular smaller than 1 mm.
  • the gas passage bores 13 which extend in the radial direction each open into a gas outlet opening 7.
  • the height of a gas distribution body 4.1, 4.2, 4.3, 4.4, 4.5 measured in the axial direction - with reference to the figure axis - of the gas inlet member 2 can be between 5 mm and 2 cm.
  • the width of the gas distribution wall 6, which extends in the radial direction - based on the figure axis - can also lie in the range between 0.5 cm and 2 cm.
  • the wall thickness of the gas distribution wall 6 can also be less than 0.5 cm and in particular 1 mm.
  • the gas distribution wall 6 surrounds a gas distribution chamber 8 which extends around the central section 15.
  • the gas distribution chamber 8 is divided into three annular sections 8 ′, 8 ′′ and 8 ′ ′′.
  • a first section 8 ′ of the gas distribution chamber 8 extends from the gas distribution wall 6 to a flow barrier 12, which is arranged concentrically with the gas distribution wall 6 Radially within the section 8 'of the gas distribution chamber 8 which is surrounded by the flow barrier 12, there extends a second flow barrier 12' which also extends concentrically to the gas distribution wall 6 'and surrounds a section 8''' of the gas distribution chamber 8, which surrounds the gas distribution chamber 8
  • the flow barriers 12, 12 ' have the same height as the gas distribution wall 6 and, in the exemplary embodiment, also the same radial width.
  • the distance was between two adjacent flow barriers 12, 12' or between the central section 15 and the flow barrier 12 ', respectively between the flow barrier 12 and the gas distribution wall 6 is greater than the wall thickness of the flow barrier ren 12, 12 'or the gas distribution wall 6.
  • the radial width of the sections 8', 8 ", 8 '" of the Gasverteilkam mer 8 is in particular greater than 1 cm.
  • the wall thickness of the flow barrier ren 12, 12 ' can be different.
  • the wall thicknesses can also be greater than the radial extent of the spaces 8 ', 8 ", 8'” between the flow barriers 12, 12 '.
  • the radial width of the sections 8 ', 8 ", 8 of the gas distribution chamber 8 can also be less than 5 mm. In the exemplary embodiment shown in FIG.
  • the ring-shaped flow barriers 12, 12 'gas passage holes 14, 14' which are arranged in a uniform circumference grant V possess.
  • the diameters of the gas passage bore 14, 14 ′ can have the same diameter as the gas passage bore 13.
  • the gas passage bores 14 'of an inner flow barrier 12' have a smaller diameter than the gas passage bores 14 of an outer flow barrier 12 and that the gas passage bores 13 of the gas distribution wall 6 have a larger diameter than the gas passage bores 14 of the flow barrier 12.
  • the flow barriers 12, 12 ' cause a pressure difference between the upstream section and the downstream section of the gas distribution chamber 8.
  • the gas passage bores 14, 14 'of the flow barriers 12, 12' are offset from one another and are not in alignment with one another.
  • the gas passage bores 14 are offset and not in alignment with the gas passage bores 13.
  • the central section 15 is designed as a base and has the same axial height as the flow barriers 12, 12 'or the gas distribution wall 6, so that the tops of the flow barriers 12, 12' and the gas distribution wall lie in the same plane in which a broad side surface of the base 15 extends.
  • Each of the bases has a mouth 10 with which a gas inlet channel 9.1, 9.2, 9.3, 9.4, 9.5 assigned to the respective gas distribution body 4.1, 4.2, 4.3, 4.4 and 4.5 opens into the radially inner section 8 "of the gas distribution chamber 8.
  • Die Mouths 10 can extend from the top of the partition 11 to the bottom of the partition 11 of an upper gas distribution body.
  • the gas distribution body 4.1 arranged at the top and directly adjoining the fastening surface 8 has four passage openings 16 arranged in the circumferential direction around a fastening opening 17, each of which has a gas inlet channel 9.2, 9.3, 9.4, 9.5 is assigned.
  • the gas inlet channel 9.1 assigned to the uppermost gas distribution body / section 4.1 opens into the mouth 10, in front of which a wall 18 is located.
  • the top of the uppermost gas distribution body 4.1 can be made of the same material with the flange portion 36, in which a plurality of gas supply lines 5 extend.
  • the second gas distribution body 4.2 seen from above has only three passage openings 16, each of which belongs to gas inlet channels 9.3, 9.4 and 9.5.
  • the gas inlet channel 9.2 opens into the mouth 10 here, in front of which if there is a baffle 18 and the offset in the circumferential direction is net to the mouth 10 of the gas distribution body 4.1.
  • the gas distribution body 4.3 arranged below the gas distribution body 4.2 has only two through openings 16, which are assigned to the gas inlet channels 9.4 and 9.5.
  • the gas inlet duct 9.3 opens into the mouth 10, which is arranged offset to the mouth 10 of the gas inlet body 4.2.
  • the gas distribution body 4.4 arranged under the gas distribution body 4.3 has only one passage opening 16, which is assigned to the gas inlet channel 9.5.
  • the gas inlet duct 9.5 opens here into an opening 10 which is arranged offset to the circumference to the opening 10 of the gas inlet duct 4.3.
  • the gas distribution body 4.5 arranged at the bottom has no passage opening 16.
  • the gas inlet channel 9.5 opens into a mouth 10, which is in turn offset with respect to the circumference.
  • the mouths 10 of all gas distribution bodies 4.1 to 4.5 open in different ways azimuthal directions related to the figure axis of the gas inlet organ 2.
  • the base plate 31 with a countersink for receiving the screw head of the fastening screw 30.
  • the gas inlet member 2 can be removed from the fastening section 3 only by loosening a fastening screw 30.
  • either the individual gas distribution bodies 4.1, 4.2, 4.3, 4.4 and 4.5 can be worked out "from the solid" out of a quartz blank.
  • the entire gas inlet element 2 also includes The gas distribution bodies 4.1, 4.2, 4.3, 4.4 and 4.5, which are then connected to one another in terms of material, can be worked out from a single blank
  • the gas distribution bodies 4.1, 4.2, 4.3, 4.4 and 4.5 are then gas distribution sections of gas inlet member 2, which are connected to one another in the same material.
  • the SLE method already mentioned above is preferably used, in which, with a strongly focused and ultrashort pulsed laser beam, to a certain extent volume areas of the quartz blank material are changed. These volume areas are the gas passage bores 13, the gas passage bores 14 and 14 ', the sections 8', 8 ", 8 of the gas distribution chamber 8, the gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5, their openings 10 and the fastening opening 17.
  • the converted material is detached from the quartz body by means of an etching liquid ..
  • the exemplary embodiment of a gas inlet element 2 shown in Figure 1 can be produced entirely from a blank in the SLE process.
  • the embodiment shown in Figure 7 is a gas inlet organ 2 with two gas distribution chambers 8 arranged one above the other, the gas distribution chambers 8 being divided into two sections, namely an upstream section 8 and a downstream section, by means of a flow barrier 12.
  • several gas distribution chambers can also be be arranged one another, each of which can be fed by a gas channel.
  • a gas channel 9.1, 9.2 opens into each gas distribution chamber 8.
  • the essentially cylindrical body of the gas inlet member 2 has gas through bores 13, 14, 14 'on its cylindrical surface and thereby forms a gas distribution wall 6.
  • the two gas distribution chambers 8 are separated from one another by means of a partition 11.
  • a base plate 31 forms the bottom of the lower gas distribution chamber 8.
  • the gas inlet member 2 consists of a one-piece quartz part.
  • the cavities are manufactured using the SLE process.
  • FIG. 8 shows a further variant of a gas inlet element, in which the flow barrier 12 has a lower height than the gas distribution walls 6.
  • a gas passage channel 14 ′′ is formed between the underside of the partition 11 and the top of the annular flow barrier 12 This is a circumferential gap. In a variant not shown, however, this gap can also be divided in the azimuthal direction by webs.
  • the flow barrier 12 "directly adjoins the gas distribution wall 6.
  • gas passage bores 14 with a small cross-sectional area open into a gas passage bore 13 with a larger cross-sectional area that extends to the gas outlet opening 7 .
  • the flow barriers 12, 12 ', 12 "embodied in the exemplary embodiments form a pressure barrier.
  • the orifices 10 of the gas inlet channels 9.1 to 9.5 are arranged eccentrically to the course of the gas distribution wall 6.
  • the flow path between the orifice and the gas passage bores gen 13 is therefore different.
  • the same amount of gas per unit area flows into the process chamber over the entire circumferential length of the gas outlet surface formed by a circular cylinder outer surface.
  • a gas inlet device which is characterized in that at least one gas distribution chamber 8 between the mouth 10 of the gas inlet channel 9.1, 9.2, 9.3, 9.4, 9.5 and the gas distribution wall 6 has at least a first, one or more gas passage channels 14, 14 'Having flow barrier 12, 12' extends.
  • a gas inlet device which is characterized in that the flow barrier 12, 12 'surrounds a central section 15 which has the mouth 10 of a gas inlet channel 9.1, 9.2, 9.3, 9.4, 9.5.
  • a gas inlet orcardi V which is characterized in that at least two flow barriers 12, 12 'in the flow direction one behind the other are arranged, the at least two flow barriers 12, 12 'and in particular the gas distribution wall 6 being arranged concentrically around the central section 15.
  • a gas inlet device which is characterized in that the at least one flow barrier 12, 12 'divides the gas distribution chamber 8 into an upstream section 8 ", 8'" and a downstream section 8 ', 8 “or that the flow barrier 12" gas passage channels 14, which directly adjoin gas cross-sectional bores 13 of the gas distribution wall 6 which are larger in cross section and which open into the gas outlet openings 7.
  • each gas distribution level is designed as a disk-shaped gas distribution section 4.1, 4.2, 4.3, 4.4, 4.5, in which the gas distribution wall 6 is connected to one another at least by a sealing system and from the edge of the partition 11 Partition 11 arises from a central section 15, which has the mouth 10 of the gas inlet channel 9.1, 9.2, 9.3, 9.4, 9.5, with an upward-facing broad side surface 15 'of the central section 15 of a lower gas distribution section 4.2, 4.3, 4.4, 4.5 flat on a lower side of the dividing plate 11 of an upper gas distribution section 4.1, 4.2, 4.3, 4.4 is present or connected to it and a passage opening 16 of the central section 15 of the upper gas distribution section 4.1, 4.2, 4.3, 4.4 with the mouth 10 of the gas inlet channel 9.1, 9.2, 9.3, 9.4, 9.5 of the lower gas distribution section 4.2, 4.3, 4.4, 4.5 is flow-connected and open to the upper broad side surface 15 '.
  • a gas inlet device which is characterized in that the separating base 11 is connected to the central section 15 and / or the gas distribution wall 6 in the same material.
  • a gas inlet device which is characterized in that the central portion 15 is formed by a base.
  • a gas inlet device which is characterized in that each gas distribution level is formed by a disc-shaped gas distribution section 4.1, 4.2, 4.3, 4.4, 4.5 and an opening 17, 17 'extending through the entire gas inlet member 2 is provided.
  • a gas inlet device which is characterized in that the opening 17 forms a fastening opening for fastening the gas inlet member 2 to the fastening section 3 or that the opening 17 forms a flushing channel 17 '.
  • a gas inlet device which is characterized in that the disc-shaped gas distribution sections 4.1, 4.2, 4.3, 4.4, 4.5, which are arranged one above the other, are in particular gas distribution bodies which are connected to one another in a material-uniform or cohesive manner.
  • a gas inlet device which is characterized in that the
  • Gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 are located next to one another in a cross-sectional plane through the central section 15 and the orifices 10 of different gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 are arranged offset to one another in the circumferential direction around the central section 15.
  • a gas inlet device which is characterized in that the
  • Gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 are arranged around a central fastening opening 17.
  • a gas inlet V orcardi which is characterized in that the gas inlet member 2 is made of quartz and in that the termein conductingigen Gasver partial body / sections 4.1, 4.2, 4.3, 4.4, 4.5 or arrangementinmila gas inlet passage means 2 by a selective laser-induced Etching process is manufactured, in which a material conversion takes place in the focus of a focused laser beam and the converted material is removed by means of an etching fluid.
  • a method which is characterized in that the gas distribution body by 4.1, 4.2, 4.3, 4.4, 4.5 or one or more gas distribution sections 4.1, 4.2, 4.3, 4.4,
  • gas inlet member 2 4.5 having gas inlet member 2 are / are manufactured in one piece by selective laser-induced etching.
  • a method which is characterized in that the mouth 10 is arranged within the gas distribution chamber 8 in such a way that the process gas stream emerging therefrom travels flow paths of different lengths to the individual gas passage bores 13 and at least one flow barrier 12, 12 ', 12 "in the gas distribution chamber 8 causes a homogenization of the process gas emerging from the gas outlet openings 7.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un dispositif d'entrée de gaz pour un réacteur CVD (1), ledit dispositif comportant un élément d'entrée de gaz qui peut être fixé à une partie de fixation (3), dotée de conduites d'alimentation en gaz (5), et présente plusieurs niveaux de répartition de gaz agencés de manière superposée, chaque niveau de répartition de gaz comportant une paroi de répartition de gaz (6) dotée d'orifices de sortie de gaz (7) qui sont reliés en écoulement à une des chambres de répartition de gaz (8) entourant la paroi de répartition de gaz (6), un conduit d'entrée de gaz (9.1, 9.2, 9.3, 9.4, 9.5) débouchant par une embouchure (10) dans la chambre de répartition de gaz (8) et les chambres de répartition de gaz (8) de niveaux de répartition de gaz différents étant séparées les unes des autres par un fond de séparation (11). Selon l'invention, une barrière d'écoulement se situe entre l'embouchure (10) du conduit d'entrée de gaz (9.1, 9.2, 9.3, 9.4, 9.5) et la paroi de répartition de gaz (6). En outre, le dispositif d'entrée de gaz se compose de plusieurs corps de répartition de gaz (4.1, 4.2, 4.3, 4.4) sous forme de plaques qui sont agencés de manière superposée.
EP19816554.0A 2018-11-28 2019-11-27 Dispositif d'entrée de gaz pour un réacteur cvd Pending EP3887569A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018130139.1A DE102018130139A1 (de) 2018-11-28 2018-11-28 Gaseinlassvorrichtung für einen CVD-Reaktor
PCT/EP2019/082679 WO2020109361A2 (fr) 2018-11-28 2019-11-27 Dispositif d'entrée de gaz pour un réacteur cvd

Publications (1)

Publication Number Publication Date
EP3887569A2 true EP3887569A2 (fr) 2021-10-06

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EP19816554.0A Pending EP3887569A2 (fr) 2018-11-28 2019-11-27 Dispositif d'entrée de gaz pour un réacteur cvd

Country Status (7)

Country Link
EP (1) EP3887569A2 (fr)
JP (2) JP7461351B2 (fr)
KR (1) KR20210094019A (fr)
CN (1) CN113330142A (fr)
DE (1) DE102018130139A1 (fr)
TW (1) TW202035777A (fr)
WO (1) WO2020109361A2 (fr)

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DE102021103368A1 (de) 2021-02-12 2022-08-18 Aixtron Se CVD-Reaktor mit einem ein Gaseinlassorgan umgebenden Temperrierring
CN115852343A (zh) * 2021-11-24 2023-03-28 无锡先为科技有限公司 一种进气分配机构及具有其的cvd反应设备
CN114318300B (zh) * 2021-12-30 2024-05-10 拓荆科技股份有限公司 一种半导体加工设备及其反应腔室、工艺管路穿腔模块
CN117418218A (zh) * 2023-12-19 2024-01-19 北京北方华创微电子装备有限公司 进气组件、进气装置及半导体工艺腔室

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KR20210094019A (ko) 2021-07-28
DE102018130139A1 (de) 2020-05-28
JP2022510900A (ja) 2022-01-28
WO2020109361A2 (fr) 2020-06-04
JP7461351B2 (ja) 2024-04-03
TW202035777A (zh) 2020-10-01
CN113330142A (zh) 2021-08-31
WO2020109361A3 (fr) 2020-09-03
JP2024079752A (ja) 2024-06-11

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