JP7459628B2 - Operating method of liquid processing equipment and liquid processing equipment - Google Patents

Description

The present disclosure relates to a method of operating a liquid processing device and a liquid processing device.

In the manufacturing process of semiconductor devices, various processing liquids are supplied to a semiconductor wafer (hereinafter referred to as a wafer), which is a substrate, using a liquid processing apparatus to perform liquid processing. An example of liquid processing is a process in which a processing liquid such as a resist is supplied to a wafer to form a coating film. In order to prevent foreign matter from being supplied to the wafer together with the processing liquid, the piping system that constitutes the liquid processing apparatus is required to be kept clean. Patent Document 1 describes a coating device configured to clean pipes with a plurality of types of chemical solutions. Patent Document 2 describes a method of cleaning piping of a liquid processing device with a chemical solution containing a specific component.

JP 2005-131637 A Japanese Patent Application Publication No. 6-320128

The present disclosure provides a technology that can reliably and quickly clean a channel system that constitutes the device when operating a liquid processing device that supplies processing liquid to a substrate to perform processing.

The method of operating a liquid processing apparatus according to the present disclosure includes a processing step of supplying a processing liquid from a processing liquid supply source to a downstream side of a supply path having a filter therebetween by a pump provided in a flow path system including the supply path, and supplying the processing liquid to a substrate from a supply unit that forms the downstream end of the supply path, thereby processing the substrate;
a cleaning step of supplying a cleaning solution to the flow path system to clean the flow path system;
a supply channel cleaning step, which is included in the cleaning step, for supplying the cleaning liquid from the upstream side to the downstream side of the supply channel in a cleaning state in which a pressure loss of a fluid in the supply channel is lower than a pressure loss in the treatment step, to clean the supply channel;
Equipped with
The cleaning step is included in a step of eliminating an abnormality that is carried out before carrying out the processing step,
The abnormality resolving step includes a canceling step of canceling the cleaning state.
a processing liquid filling step, which is performed after the releasing step, of supplying the processing liquid from the processing liquid supply source to the flow path system to fill it;
a processing liquid purging step, which is carried out after the processing liquid filling step, in which the processing liquid is caused to flow from the upstream side to the downstream side of the supply path by the pump at a flow rate lower than a flow rate of the processing liquid in the processing step, and is discharged from the supply part;
Equipped with .

According to the present disclosure, when operating a liquid processing apparatus that performs processing by supplying a processing liquid to a substrate, it is possible to reliably and quickly clean a flow path system that constitutes the apparatus.

1 is a configuration diagram of a resist coating apparatus that is an embodiment of the present disclosure. FIG. 3 is an explanatory diagram illustrating processing by the resist coating device. FIG. 4 is a flow chart showing steps performed when an abnormality occurs in the resist coating apparatus. FIG. 2 is an explanatory diagram showing steps of the flow. It is an explanatory diagram showing steps of the above-mentioned flow. FIG. 2 is an explanatory diagram showing steps of the flow. It is an explanatory diagram showing steps of the above-mentioned flow. It is an explanatory diagram showing steps of the above-mentioned flow. It is an explanatory diagram showing steps of the above-mentioned flow. FIG. 2 is an explanatory diagram showing steps of the flow. It is an explanatory diagram showing steps of the above-mentioned flow. FIG. 2 is an explanatory diagram showing steps of the flow. FIG. 2 is an explanatory diagram showing steps of the flow. It is a chart figure showing an outline of change of a pump at the time of execution of the above-mentioned flow. It is an explanatory view showing the state of a channel at the time of execution of the above-mentioned flow. It is an explanatory view showing the state of a channel at the time of execution of the above-mentioned flow. FIG. 3 is a side view of a nozzle provided in the resist coating device. It is an explanatory view showing the state of a channel at the time of execution of the above-mentioned flow. FIG. 13 is a configuration diagram of a resist coating apparatus according to another embodiment. FIG. 3 is a configuration diagram of a resist coating apparatus according to another embodiment. FIG. 3 is a configuration diagram of a resist coating apparatus according to another embodiment.

Hereinafter, a resist coating apparatus 1, which is an embodiment of the liquid processing apparatus of the present disclosure, will be described with reference to FIG. The resist coating apparatus 1 coats a resist, which is a processing liquid, on a wafer W, which is a substrate, by spin coating to form a resist film. The resist coating device 1 includes a processing section 11, a nozzle moving section 2, and a piping system 3.

The processing section 11 includes a spin chuck 12, which is a substrate holding section, a rotation mechanism 13, and a cup 14. The spin chuck 12 holds the center of the back surface of the wafer W by suction, and the rotation mechanism 13 rotates the spin chuck 12. The cup 14 surrounds the side circumference of the wafer W held by the spin chuck 12 and receives liquid splashed from the wafer W.

The nozzle moving section 2 allows the nozzle 31 forming the end of the piping system 3 to move freely between the center of the wafer W held by the spin chuck 12 and the standby section 15 provided outside the cup 14. has been done. The standby section 15 includes a drainage path, which is not shown in FIG. The nozzle moving unit 2 includes an arm 21 that supports the nozzle 31, a moving mechanism 22 that moves the arm 21 up and down and horizontally, and a camera 23. A camera 23 is provided on the arm 21 and moves together with the nozzle 31. The camera 23 can image the flow path provided inside the nozzle 31 from outside the nozzle 31.

Next, the configuration of the piping system 3 will be explained. In order to avoid complicating the explanation, the piping system 3 is shown in the figure in a simplified manner compared to the actual configuration. The piping system 3 is composed of the above-mentioned nozzle 31, piping, valves, and tanks, and a flow path system is constituted by the flow paths inside each piping, inside each valve, inside the nozzle 31, and inside the tank that make up the piping system 3. .

The downstream end of the pipe 32 constituting the pipe system 3 is connected to the nozzle 31. The upstream side of the pipe 32 is connected to the bottom of the tank 34 via the valve V1, the filter 33, the valve V2, and the valve V3 in this order. The downstream end of the pipe 35 is connected to the top of the tank (storage section) 34, and the upstream side of the pipe 35 is connected to the resist bottle RB in which the resist is stored via the valve V4, and is immersed in the liquid phase in the bottle. The pipes 32, 35, and the tank 34 connect the resist bottle RB, which is a processing liquid supply source, to the nozzle 31, which is a resist supply section, to form a supply path for supplying the resist to the wafer W. The resist is supplied from the resist bottle RB to the tank 34 and stored therein, and the resist in the tank 34 is supplied to the nozzle 31.

The downstream end of the pipe 36 is connected to the resist bottle RB and opens to the gas phase inside the bottle. The upstream end of the pipe 36 is connected to a supply source 37 of _N2 (nitrogen) gas via a valve V5. The supply and cut-off of _N2 gas to the downstream side of the pipe 36 is controlled by opening and closing the valve V5, and the resist bottle RB is pressurized by the supply of _N2 gas, and the resist is pressure-fed to the downstream side of the pipe system 3. Note that, in order to carry out a recovery flow from an abnormality described later, the resist bottle RB can be replaced with a thinner bottle TB in which thinner is stored instead of resist, and when the thinner bottle TB is attached to the pipe system 3, the thinner is pressure-fed to the downstream side.

The filter 33 described above consists of a casing that forms a fluid flow path, and a filter main body that is provided inside the casing and is made of filter paper or the like that collects foreign substances. One end of a pipe (vent pipe) 41 is connected so that the gas accumulated in the filter 33 can be removed, and the other end of the pipe 41 is connected to the factory where the resist coating device 1 is installed via a valve V6. Connected to the drain. The filter 33 is configured to be detachable from the piping system 3 in order to carry out a recovery flow from an abnormality, which will be described later. One end of a pipe 42 is connected to the upper part of the tank 34 so that gas accumulated in the tank 34 can be removed, and the other end of the pipe 42 is opened to the atmosphere via a valve V7. .

Further, a pipe 43 is provided that connects the N ₂ gas supply source 37 forming the purge gas supply section and the downstream side of the valve V4 in the pipe 35, and the pipe 43 is provided with a valve V8. Therefore, N ₂ gas can be supplied into the tank 34 by bypassing the resist bottle RB.

Further, one end of a pipe 45 is connected between the valve V1 and the filter 33 in the pipe 32. The other end of the pipe 45 is connected between the valves V2 and V3 in the pipe 32 via a pressure sensor 46, a valve V9, a pump 47, and a valve V10 in this order. The pump 47 is, for example, a diaphragm pump, and the volume of the fluid storage space 49 is changed by deformation of the diaphragm 48, and fluid is sucked and discharged. The expansion speed and contraction speed of the storage space 49 can be adjusted, and the pressure applied to the storage space 49 (i.e., the discharge pressure of the pump 47) when the storage space 49 is contracted can also be adjusted. These expansion speed, contraction speed, and discharge pressure are controlled by a control section 5, which will be described later.

With the resist stored in the tank 34, only valves V3 and V10 of the valves V are opened and the pump 47 sucks up the resist. Next, valve V3 is closed and valves V1 and V2 are opened, and the pump 4 ejects the resist. As shown in FIG. 2, the resist is ejected from the nozzle 31 and supplied to the center of the wafer W on the spin chuck 12. The wafer W rotates, and the resist is supplied to the entire surface of the wafer W by spin coating, forming a resist film. For convenience, the operation of processing the wafer W in this manner is referred to as a processing step. Note that in FIG. 2 above and in each diagram showing the piping system 3 described below, the parts where the fluid is flowing are shown in bold.

Further, the piping 45 and a portion of the piping 32 form a circulation path in which a pump 47 and a filter 33 are interposed. In normal times, when the resist is in a standby state where no processing steps are being performed, the resist circulates through the circulation path, and the filter 33 collects foreign substances. Specifically, by switching the opening and closing of the valves V2, V9, and V10 and repeating the suction and discharge operations of the pump 47, the resist passes through the pump 47, the valves V10, V2, the filter 33, and the valve V9 in this order, and then the resist is removed again. A circulating flow is formed which flows into the pump 47. For convenience, the operation in this standby state will be referred to as a cyclic step.

As shown in FIG. 1, the resist coating apparatus 1 includes a control section 5 consisting of a computer. The control section 5 includes a program 51, an operation section 52, a notification section 53, and a memory 54. The program 51 transmits control signals to control the opening and closing of each valve V and the operation of the pump 47. In accordance with the control signal, each of the above-described normal steps and some steps constituting the abnormality recovery flow are executed. As will be described in detail later, the recovery flow from an abnormality includes a step of cleaning the piping system 3 and a step of filling the piping system 3 with resist. The above program 51 is stored and installed in a storage medium such as a compact disk, hard disk, memory card, DVD, etc. This program 51 also performs various determinations that will be described later.

The operation unit 52 is composed of, for example, a touch panel or a mouse. By performing a predetermined operation from the operation unit 52, the user of the apparatus instructs the start of some of the steps that constitute the recovery flow from an abnormality. In other words, the user can select whether or not to start a step using the operation unit 52. The notification unit 53 is constituted by, for example, a display, and after each step constituting the recovery flow is completed, the completion is displayed on the screen to notify the user of the device. Note that the notification unit 53 is not limited to a configuration that performs such a screen display, but may be configured to include, for example, a speaker or the like, and provide audio notification. As for the memory 54, image data acquired by the camera 23 is stored. Further, data for controlling the opening/closing sequence of each valve V and the operation sequence of the pump 47 for implementing each step of the recovery flow is stored in the memory 54.

Next, the recovery flow from the above abnormality (process for resolving the abnormality) will be described. During the repeated processing of wafers W, an abnormality may occur in which the resist flowing through the piping system 3 is supplied to the wafer W accompanied by particles due to some cause, and these particles remain in the resist film. This resist coating apparatus 1 is configured to be able to implement the recovery flow when such an abnormality is confirmed, for example, by inspecting a processed wafer W.

3 shows each step constituting this recovery flow in order. To explain the outline of the recovery flow, after removing the resist from the piping system 3, a cleaning process (cleaning step) is performed in which thinner (cleaning liquid) which is a solvent for the resist, and _N2 gas are sequentially supplied to the piping system 3. Thereafter, the piping system 3 is refilled with resist, and the wafer W is made ready for reprocessing. This refilling is performed such that the resist flows through the piping system 3 at different speeds in each step, so that the thinner and air bubbles used in the cleaning process are effectively removed from the piping system 3. In other words, the recovery flow is composed of steps in which fluids are passed through the piping system 3 in different modes (types of fluids or flow rates of fluids).

In carrying out the above-mentioned cleaning process, if the filter 33 is left installed in the piping 32, it is difficult to sufficiently increase the flow rate of the cleaning liquid and _N2 gas downstream of the filter 33 due to the pressure loss in the filter 33. In other words, there is a risk that a sufficient cleaning effect cannot be obtained. Therefore, before carrying out the cleaning process, the filter 33 is removed from the piping system 3, and the dummy filter 30 is installed in the piping system 3 instead of the filter 33. The dummy filter 30 has the same configuration as the filter 33, except that it is not provided with a filter body such as filter paper. When the same fluid is flowed from the upstream side to the downstream side in the piping 32 under the same conditions, the case where the dummy filter 30 is provided and the case where the filter 33 is provided are in a state (cleaning state) in terms of pressure loss because the filter body is not provided. In this way, the cleaning state refers to a state in which the pressure loss is small when the same fluid is flowed under the same conditions. In addition, the dummy filter 30, which is a flow path forming member, may have any shape as long as it can reduce the pressure loss (i.e., reduce the flow path resistance) compared to the case where the filter 33 is provided and can form a flow path for the thinner and _N2 gas.

The filter 33 is reattached to the piping system 3 after the cleaning process of the piping system 3 and reused before refilling the piping system 3 with resist. The reason for removing the filter 33 during purging is also to save the trouble of reusing it. Specifically, when the filter 33 is removed from the piping system 3, the filter body (filter paper) of the filter 33 is already wetted with resist due to its previous use. If thinner and _N2 gas are supplied while the filter 33 is attached to the piping system 3 during the cleaning process, wetting with resist again is required for reuse, and a long time of resist passage is required to remove bubbles from the filter 33. By replacing the filter with the dummy filter 30 and performing the cleaning process as described above, these problems are prevented.

Each step constituting the recovery flow will be described below. As shown in Fig. 3, the recovery flow is composed of a dummy filter attachment step S1, a resist drying step S2, a thinner bottle attachment step S3, a cleaning step S4, a thinner drying step S5, a filter attachment step S6, a resist bottle attachment step S7, a resist installation step S8, a resist purging step S9, and a discharge state check step S10. Each step S is carried out in this order. The above cleaning step S4 is a step in which thinner and _N2 gas are supplied in this order as described above, and therefore includes a thinner supply step S41 and a thinner purging step S42.

For example, the resist drying step S2, cleaning step S4, thinner drying step S5, resist installation step S8, resist purge step S9, and discharge state check step S10 proceed automatically in accordance with the control signal output from the control unit 5. In other words, the opening and closing sequence of each valve V and the operation sequence of the pump 47 are controlled in accordance with the control signal, and the processing during the step proceeds automatically. When each of the above steps that proceed automatically is completed, the notification unit 53 notifies the user that the step has been completed. In response to the notification, the user proceeds to the next step. Specifically, when the next step is a step that proceeds non-automatically, the user himself proceeds to proceed to the next step. When the next step is a step that proceeds automatically, the user issues a predetermined instruction to execute the next step from the operation unit 52, and the next step is started and proceeds automatically.

Hereinafter, each step S constituting the recovery flow will be explained in detail in turn with reference to FIGS. 4 to 13. The user instructs the start of the recovery flow, that is, the start of the dummy filter attachment step S1, from the operation unit 52. In response to this start instruction, if the above-described processing steps or circulation steps are being executed, those steps are stopped and the nozzle 31 is located in the standby section 15. The filter 33 is removed from the piping system 3 by the user, and the dummy filter 30 is attached to the piping system 3 in place of the filter 33. The vent pipe 41 attached to the filter 33 is replaced with a dummy filter 30 (FIG. 4).

When the dummy filter attachment step S1 is completed and the user performs a predetermined operation from the operation unit 52, the resist drying step S2 is started. In this step S2, the valve V8 is opened, and _N2 gas is supplied from the _N2 gas supply source 37 to the piping system 3 via the tank 34, bypassing the resist bottle RB. The other valves V are also opened and closed in a predetermined manner, and _N2 gas is supplied from the tank 34 to other parts of the piping system 3. For example, the open and closed states of each valve V other than the valve V8 change according to the elapsed time from the start of step S2, and _N2 gas is sequentially supplied to each part constituting the piping system 3. By supplying _N2 gas, the resist remaining in the piping system 3 is washed away and removed from the piping system 3 via the nozzle 31, the pipe 42 connected to the tank 34, and the pipe 41 connected to the dummy filter 30. Therefore, the resist is removed not only from the flow paths in each pipe, but also from the tank 34. Note that a part of the resist in the piping system 3 is exposed to the _N2 gas and dried, and remains on the wall surface constituting the piping system 3.

To show an example in which step S2 is being executed, FIG. 5 shows a state in which the valves V1 to V3 are opened and N ₂ gas flows through the pipe 32 and is discharged from the nozzle 31. The resist is removed from the piping 32 and the tank 34 by the flow of N ₂ gas, and is discharged from the nozzle 31. The inside of the pipe 32 and the tank 34 from which the resist has been removed in this way are dried by the action of N ₂ gas. Note that since the opening and closing of the valve V is switched over time as described above, N ₂ gas is also supplied to the piping 45 and the like that are not shown as being supplied with N ₂ gas in the figure.

After each valve V has gone through a predetermined opening and closing sequence, the valve V8 is closed to stop the supply of _N2 gas from the _N2 gas supply source 37, and a notice is issued to the effect that step S2 is complete. After that, the user removes the resist bottle RB from the piping system 3, and instead installs a thinner bottle TB filled with thinner, which is a solvent for the resist. That is, the above-mentioned thinner bottle installation step S3 is performed (FIG. 6).

Thereafter, a cleaning step S4 is started in response to a user's instruction from the operation unit 52. More specifically, a thinner supply step S41 that constitutes this cleaning step S4 is started. Specifically, valve V5 is opened to supply _N2 gas to the thinner bottle TB, which is the cleaning liquid supply source, and valves V4 and V7 are opened to store thinner in the tank 34 (see Fig. 7). Note that the other valves V are closed.

Next, the valves V4, V5, and V7 are closed to stop the filling of the thinner into the tank 34, and the valve V8 is opened to supply _N2 gas from the _N2 gas supply source 37 to the tank 34, bypassing the thinner bottle TB. The other valves are opened and closed in a predetermined manner, and the thinner is supplied to the downstream side of the piping system 3 from the tank 34 pressurized by _N2 gas. The open/close state of each valve V downstream of the tank 34 changes according to the elapsed time from the start of step S41, and the thinner is sequentially supplied to each part constituting the piping system 3, and is removed from the piping system 3 via the nozzle 31 and the piping 41 and 42. As a result, the resist remaining in the piping system 3 is dissolved by the thinner and removed from the piping system 3 together with the thinner.

Figure 8 shows the state of the apparatus during a certain period during the execution of step S41. During this period, valves V1 to V4 are opened, and thinner flows through pipe 32 and is discharged from nozzle 31. Pipe 32 is provided with dummy filter 30 instead of filter 33 (cleaning state), and as described above, the pressure loss of thinner due to dummy filter 30 is low. Therefore, thinner flows at a relatively high flow rate both upstream and downstream of dummy filter 30 in pipe 32. As a result, a relatively large pressure acts on the resist remaining on the upstream and downstream sides of pipe 32, and the resist is swept away by the thinner and removed from nozzle 31 together with the thinner. The flow rate of thinner flowing through pipe 32 in this way is higher than the flow rate of resist in pipe 32 when resist is discharged from nozzle 31 in the processing step. As described above, during execution of step S41, the open/closed state of each valve is switched, so the thinner also flows through each pipe other than the illustrated pipe 32, and is then discharged from the pipe system 3.

The thinner is supplied to the entire piping system 3 through a predetermined opening and closing sequence for each valve V, and is filled therein. Also, all the thinner is released from the tank 34. Then, the valve V8 is closed, the supply _{of N2 gas} from the N2 gas supply source 37 to the tank 34 is stopped, and the end of step S41 is notified. After that, when the thinner purge step (cleaning liquid purge process) S42 is started by the user's instruction from the operation unit 52, the valve V8 is opened again, and _N2 gas is supplied to the tank 34, bypassing the thinner bottle TB. Then, the valves V downstream of the tank 34 are opened in a predetermined opening and closing state, and _N2 gas is supplied from the tank 34 to other parts of the piping system 3. As in each step described above, the opening and closing state of the valve V changes, and _N2 gas is sequentially supplied to each part constituting the piping system 3. By this supply of _N2 gas, the thinner is removed from the piping system 3 through the nozzle 31 and the pipes 41 and 42. As the _N2 gas flows through the piping system 3 in this manner, the resist adhering to the wall surface of the piping system 3 that was not completely removed in step S41 is pressurized, peeled off from the wall surface, and removed from the piping system 3 together with the thinner.

FIG. 9 shows the state of the apparatus during a certain period during the execution of step S42. During this period, the valves V1 to V3 are opened, and _N2 gas is supplied to the nozzle 31 through the pipe 32. As in step S41, the pipe 32 is provided with the dummy filter 30, so that the pressure loss of _N2 gas due to the dummy filter 30 is low as described above. Therefore, the thinner flows at a relatively high flow rate on both the upstream and downstream sides of the dummy filter 30 in the pipe 32. This allows the removal of the resist and thinner to proceed efficiently. The flow rate of the _N2 gas flowing through the pipe 32 is higher than the flow rate of the resist in the pipe 32 when the resist is discharged from the nozzle 31 in the processing step. Note that, since the open/closed state of each valve is switched during the execution of step S42 as described above, _N2 gas is also supplied to each pipe other than the pipe 32 shown in the figure, and the thinner is removed.

After each valve V has gone through a predetermined opening and closing sequence, each valve V is closed, and the completion of step S42 is notified. Then, the thinner drying step S5 is started by an instruction from the user's operation unit 52. Specifically, the valve V5 is opened, and _N2 gas is supplied to the thinner bottle TB. The other valves V are in a predetermined opening and closing state, and _N2 gas is supplied from the thinner bottle TB to other parts of the piping system 3. At the start of this step S5, for example, the thinner bottle TB is empty due to the execution of the above step S41. As with the other steps S, the opening and closing states of each valve V other than the valve V5 change depending on the elapsed time from the start of step S42, and _N2 gas is sequentially supplied to each part constituting the piping system 3. The thinner attached to the wall surface forming the flow path is dried by the supply of this _N2 gas.

After passing through a predetermined opening/closing sequence for each valve V, each valve V including the valve V5 is closed and the supply of N ₂ gas from the N ₂ gas supply source 37 is stopped, step S5 is completed, and a message to that effect is displayed. be notified. Thereafter, the dummy filter 30 is removed from the piping system 3 by the user, and the filter 33 that was removed in step S1 is reattached to the piping system 3 in its place. That is, the filter attachment step S6, which is a release step for releasing the cleaning state, is performed. Subsequently, the thinner bottle TB is removed from the piping system 3 by the user, and the resist bottle RB that was removed in step S3 is reattached to the piping system. That is, the resist bottle attaching step S7 is performed (FIG. 10).

Thereafter, when the user performs a predetermined operation from the operation unit 52, a resist installation step S8 (processing liquid filling step) is started. Specifically, the valve V5 is opened and _N2 gas is supplied from the _N2 gas supply source 37 to the resist bottle RB, and the other valves V are operated from the start of the step as in each step S described above. The open/close state changes depending on the time. Thereby, the tank 34 and the pipes 32 and 45 are filled with the resist supplied from the resist bottle RB. FIG. 11 shows a situation when the valves V1 to V4 are opened and the resist is flowed through the tank 34 and the piping 32 to be filled, and the resist that has flowed through the piping 32 is discharged from the nozzle 31.

When the resist is filled in the piping system 3 as described above through a predetermined opening and closing sequence for each valve V, the valve V5 is closed to stop _the supply of _N2 gas from the N2 gas supply source 37 to the resist bottle RB, step S7 is completed, and a notification to that effect is given. Then, when a user performs a predetermined operation from the operation unit 52, a resist purge step S9 (processing liquid purge process) is started. To be specific about this step S9, the pump 47 sucks the resist from the tank 34 with the valves V3 and V10 open. Then, the valve V3 is closed and the valves V1 and V2 are opened, and the pump 47 discharges the resist to the nozzle 31 through the filter 33 and discharges it from the nozzle 31. The pump 47 operates continuously so that the resist always flows through the piping system 3 during the execution of step S9 by discharging the resist from the pump 47.

Figure 14 shows a schematic diagram of how the storage space 49 changes in each step to illustrate the difference between the operation of the pump 47 in step S9 and the other steps. The top part of Figure 14 shows the change in the storage space 49 in step S9. As shown here, in step S9, after suction is performed, the pump 47 operates so that the storage space 49 slowly and continuously contracts. As a result, the flow rate of the resist in the piping system 3 becomes, for example, 0.1 mm/sec to 0.5 mm/sec.

The middle part of FIG. 14 shows how the volume of the storage space 49 changes when the processing steps described in FIG. 2 are executed. In each of this processing step and step S9, the resist coating apparatus 1 has the same configuration, and the resist flows through the same route. However, in step S9, the pump 47 operates as described above, so that the contraction speed of the storage space 49 is lower in step S9 than in the processing step. Therefore, the flow velocity of the resist in the channel from the pump to the nozzle 31 during discharge from the pump 47 is lower in step S9 than in the processing step. The middle part of FIG. 14 shows an example of a change in the volume of the storage space 49 when the pump 47 sucks the resist to the maximum extent and then performs one discharge operation (that is, processes one wafer W). There is. When repeatedly performing the ejection operation a plurality of times (processing a plurality of wafers W), the volume of the storage space 49 is gradually reduced as in step S10, which will be described later.

This step S9 is a step in which the thinner remaining in the pipes 32 and 45 is removed by passing the resist through the resist. By removing the thinner in this manner, the thinner is prevented from becoming particles and being supplied to the wafer W when the processing step is restarted. As described above, in step S9, the resist is passed through the piping system 3 at an extremely low speed. The reason for this will be explained below.

For example, the pipes 32 and 35 are bent. For example, suppose that thinner (indicated by T) remains at the corners of bent pipes 32 and 35 as shown in FIG. If the flow rate of the resist is high, there is a possibility that the resist will flow concentrated in a part of the corner and the resist will not be sufficiently supplied to the other part. In other words, as shown in FIG. 15, the thinner T may not be washed away by the resist and may remain even after step S9 is completed. Therefore, by lowering the flow rate of the resist as described above, as shown in FIG. 16, the resist is sufficiently passed through the entire corner, and the replacement of the areas where thinner T remains with the resist is promoted. I'm trying to make it happen. Although the bent part of the pipe is taken as an example, if the flow velocity of the resist is high even in areas where the flow path is relatively narrow, such as inside the valve V, the flow of the resist in the flow path will be biased, just like in the bent part. Therefore, it is considered effective to flow the resist at a low flow rate in order to discharge the thinner in this way.

By the way, as described above, in step S8 before step S9, the resist is pressure-fed using _N2 gas. Assume that in each of steps S8 and S9, the flow velocity of each portion of the piping system 3 through which the resist flows is measured. The measurement position is assumed to be the same between steps S8 and S9, and specifically, for example, at an arbitrary position on the pipe 32. Due to the operation of the pump 47 described above, the resist flow rate in step S9 is lower than the resist flow rate in step S8. That is, in steps S8 and S9, the resist is passed through at a relatively high flow rate, and the resist is passed at a relatively low flow rate.

In step S8 above, the resist is passed through at a high flow rate, which applies high pressure to the flow path, and thus the thinner and other foreign matter are removed efficiently. After that, in step S9, the resist is passed through at a low flow rate as described above, which removes the thinner that was not completely removed in step S8. In other words, by passing the resist through steps S8 and S9 at different flow rates, foreign matter is more reliably removed from the piping system 3. Note that the comparison of flow rates between steps here is a comparison of the highest flow rates during step execution. Therefore, it is not a comparison of the flow rates of the resist when it is not yet at a sufficient speed, for example, immediately after the start of a step.

When the operation of the pump 47 is repeated a predetermined number of times from the start of step S9, step S9 ends, and a notification to that effect is issued. Thereafter, when the user performs a predetermined operation from the operation unit 52, a discharge state check step S10 is started. The respective valves and pump 47 operate in the same manner as the processing steps specifically explained in FIG. 2, and the resist is discharged from the nozzle 31 (FIG. 13). Therefore, the volume of the storage space 49 of the pump 47 changes as shown in the middle part of FIG. However, unlike when a processing step is executed, the resist is discharged to the standby section 15 and not to the wafer W. After the resist is discharged to the standby section 15, an image is taken by the camera 23, and the control section 5 detects the height H1 of the liquid level of the resist in the flow path in the nozzle 31 based on the acquired image data. Such discharge of the resist and detection of the liquid level height based on image data are defined as an inspection step.

Note that FIG. 17 shows a schematic example of such an image. When the resist in the piping system 3 contains air bubbles and the resist containing such bubbles is supplied to the wafer W, the air bubbles may cause defects in the resist film. As described above, when the resist in the piping system 3 contains a large number of air bubbles, the liquid level height H1 in the nozzle 31 may deviate from the normal height range H2. The control unit 5 performs a determination step to determine whether or not there are air bubbles in the resist in the piping system 3 based on the detected liquid level height H1. If the height H1 is within a preset normal range, the control unit 5 notifies the user that there is no abnormality and that the recovery flow has ended. If the height H1 is outside the normal range, it is determined that the resist contains air bubbles, and corrective action is taken to remove the bubbles.

As the above-mentioned countermeasure operation, a resist discharging operation that is substantially the same as the processing step is performed. However, in this countermeasure operation, a higher pressure is applied to the resist in the storage space 49 for a short time compared to the operation in the processing step. Specifically, in this countermeasure operation, the discharge pressure is higher than that during execution of the processing step, for example, a pressure of 100 kPa to 300 kPa is applied to the storage space 49 to discharge the resist. The lower part of FIG. 14 shows how the storage space 49 changes when this countermeasure operation is executed. As shown therein, due to the high pressure applied to the storage space 49 as described above, the amount of contraction (contraction speed) per unit time is greater than when the processing step is executed. Therefore, the contraction speed of the storage space 49 is as follows: contraction speed in the coping operation of step S10>contraction speed in the processing step>contraction speed in step S9. As the pump 47 operates in this manner during the countermeasure operation, the resist flows through the piping system 3 at a higher flow rate than when the processing step is executed, and is discharged (discharged) from the nozzle 31. In this countermeasure operation, the resist is also discharged to the standby section 15, for example, instead of the wafer W.

Figure 18 is a schematic diagram showing the resist flowing through the portion of the piping system 3 from the pump 47 to the nozzle 31 (i.e., the pipes 32, 45) due to the above-mentioned countermeasure operation. When the resist flows through that portion of the flow path, the high flow rate creates turbulence. This turbulence sweeps away air bubbles B that have been retained in bends, etc., toward the nozzle 31, where they are removed together with the resist. By repeatedly and intermittently applying high pressure for a short period of time in this manner, for example, the resist is more reliably agitated and the air bubbles B are washed away.

When the resist is ejected as the countermeasure operation a predetermined number of times, the test step for detecting the liquid level H1 of the nozzle 31 is performed again to determine whether there is an abnormality. If the liquid level height H1 is within the normal range H2, the notification unit 53 notifies the user of the end of the recovery flow. If the height H1 is outside the normal range, it is assumed that the resist still contains air bubbles, and the above-mentioned countermeasure action is to eject the resist again a predetermined number of times, and then the inspection step is performed. Implemented. After the recovery flow is completed, the processing steps and circulation steps described above are performed again to process the wafer W and form a resist film.

According to the resist coating apparatus 1 described above, by implementing the recovery flow, it is possible to suppress particles from being supplied to the wafer W together with the resist. In other words, it is possible to prevent the particles from remaining in the resist film, resulting in defects, and reducing the yield of semiconductor products. Regarding this recovery flow, thinner and _N2 gas are sequentially supplied with the dummy filter 30 attached to the piping system 3 as described above.
Thereby, the flow velocity of the thinner and the N ₂ gas in the pipe 32 can be made sufficiently high without applying high pressure to each of the thinner and the N ₂ gas. As a result, foreign matter within the piping system 3 can be removed with high reliability and in a short time.

Further, step S9 is executed to flow the resist through the piping system 3, but as described above, before this step S9, step S8 is performed to flow the resist at a higher flow rate than step S9. Flowing the resist at different flow rates in this way is preferable because particles can be removed from the piping system 3 more reliably and quickly.

In addition, some of the steps that make up the recovery flow are automatically carried out by the control unit 5 sending a control signal. This makes it possible to eliminate the difference in skill level between users who execute this recovery flow. This therefore reduces the difference in the time required between users from starting to finishing the recovery flow, allowing the recovery flow to proceed quickly. In addition, the effort required by the user to execute this recovery flow is reduced.

However, the steps described as proceeding automatically in this way do not have to be processed automatically. That is, the user may manually use the operation unit 52 to instruct the opening and closing of each valve V and the operation of the pump 47. That is, each time an instruction is given, a control signal corresponding to that instruction may be output to each part of the apparatus, and the steps may proceed. Also, when the user proceeds through the steps in this way, for example, in the discharge state check step S10, the user may visually inspect the resist in the nozzle 31 or the resist supplied from the nozzle 31 to the wafer W, and determine whether or not there are bubbles, thereby selecting whether or not to carry out the above-mentioned corrective action. Note that only some of the steps described above as proceeding automatically may proceed automatically.

By the way, assume that a pressure sensor is provided downstream of the filter 33 in the piping 32, for example. When the resist is discharged from the nozzle 31 via the piping 32, if the resist contains air bubbles, the pressure detected by the pressure sensor will be reduced. Therefore, in step S10, instead of using the camera 23 to make the determination, this pressure sensor may be used to make the determination. Specifically, for example, the presence or absence of air bubbles is detected by discharging the resist from the nozzle 31 and monitoring the pressure at that time in the same manner as in the above inspection step. If the pressure is lower than the reference value, it is determined that the resist contains bubbles, that is, there is an abnormality in the resist. That is, in step S10, it is not limited to determining whether or not to perform a countermeasure action based on the image data. Moreover, although the above-mentioned countermeasure operation is performed based on the result of abnormality determination, it may be performed a predetermined number of times regardless of such a result.

In the above recovery flow, even when the next step S is automatically performed after the end of one step S that is performed automatically, it has been explained that the user instructs the start of the next step S. Step S may be started automatically. That is, for example, steps S8 to S10 are steps that are each performed automatically, but these steps S may be performed automatically and successively without any instructions from the user.

In the above resist purge step S9, in the example described above, the pump 47 is operated so that the flow rate of the resist is constant, but a different resist flow rate may be used. In other words, the pump 47 may be operated so that the flow rate of the resist in one period during execution of step S9 is different from the flow rate of the resist in another period. As described above, if the flow rate is slow, the resist can be sufficiently distributed to each part of the flow path, and if the flow rate is high, strong pressure can be applied to the particles in the flow path, so by supplying the resist at such different flow rates, the particles can be more reliably removed. Note that the flow rate of the resist is not limited to being changed in two stages as described above, and may be changed in more stages.

In addition, in the thinner supply step S41 of the cleaning step S4, the flow rate of the thinner may be made to be different between one period and another period during execution of the step S41. In changing the flow rate for each period in this way, it is possible to supply the thinner at a low flow rate during one period, and then to supply the thinner at a higher flow rate during the other period. By controlling the flow rate in this way, the thinner flowing at a low flow rate can liberate foreign matter from the corners of the piping, and then the thinner flowing at a high flow rate can wash away and remove the liberated foreign matter. Note that even when the flow rate of the resist is controlled for each period in step S9 described above, the flow rate can be controlled such that the resist flows in the order of low flow rate and high flow rate, for example. In adjusting the flow rate of the thinner as described above, for example, the opening degree of the valve V8 interposed between the N ₂ gas supply source 37 and the tank 34 in which the thinner is stored is adjusted, and the flow rate of the thinner is adjusted. The flow rate of N ₂ gas may be adjusted. Note that the one period and the other period correspond to different periods.

As in step S41, the thinner purge step S42 may be changed for each period in the step S42. In this case, as in step S41 _{, N2} gas can be supplied at a low flow rate and then at a high flow rate. In order to adjust the flow rate of _N2 gas in this manner, for example, the opening of the valve V8 may be adjusted. Also, as in the resist purge step S9, the thinner purge step S42 and the thinner supply step S41 may have more than two stages of change in the flow rate of the fluid.

Next, a resist coating apparatus 61, which is a modified example of the resist coating apparatus 1, will be described with reference to FIG. 19. The difference between the resist coating apparatus 61 and the resist coating apparatus 1 is that a pipe 62 is provided for bypassing the filter 33 and supplying fluid to the downstream side of the pipe 32. One end of the pipe 62 is connected to the pipe 32 between the filter 33 and the valve V2. The other end of the pipe 62 is connected to the pipe 32 between the valve V11 and the position to which the pipe 45 is connected. Valves V12 and V13 are provided at one end and the other end of the pipe 62, respectively.

In the resist coating device 61, instead of replacing the filter 33 with the dummy filter 30, the above cleaning step S4 is performed by passing thinner and _N2 gas through the pipe 62 in order to bypass the filter 33. Valves V12 and V13 are closed except when such filter 33 is to be bypassed. The pipe 62 is configured such that the pressure loss of the fluid is smaller when the fluid passes through the pipe 62 than when it passes through the filter 33. Therefore, when supplying thinner and N ₂ gas to the piping system 3 to perform the above-mentioned cleaning step S4, the filter 33 is not necessarily removed.

FIG. 20 shows a resist coating device 63 that is a modification of the resist coating device 1. As shown in FIG. The difference between the resist coating device 63 and the resist coating device 1 is that a bubble sensor 64 is provided on the downstream side of the valve V6 of the piping 41 connected to the dummy filter 30. In the resist coating device 63, in the thinner supply step S41, thinner is supplied from the tank 34 to the downstream side of the piping system 3, for example, as shown in FIG. As time passes in step S41, the storage space 49 of the pump 47 is gradually expanded. That is, the storage space 49 is expanded according to the progress of filling the piping system 3 with thinner.

The reason for expanding the storage space 49 in this way is to increase the area of the wall surface that forms the storage space 49 that comes into contact with the thinner, and to increase the cleanliness of the piping system 3 by cleaning. More specifically, let us assume that the volume of the storage space 49 is kept relatively large and constant in order to increase the conductance of the thinner in the pump 47, and the thinner is supplied to the piping system 3. In that case, it is considered that the thinner passes only through the lower part of the storage space 49 due to gravity, and does not come into contact with the upper wall surface that forms the storage space 49. Therefore, as described above, at the beginning of step S41, the storage space 49 is made relatively small so that the thinner comes into contact with the entire wall surface of the storage space 49, and then the storage space 49 is expanded as described above. This increases the filling rate of the thinner in the storage space 49, and the entire or most of the wall surface that forms the storage space 49 comes into contact with the thinner and is cleaned.

As described above, the supply of N ₂ gas to the thinner bottle TB and the expansion of the storage space 49 are performed in parallel, and after a predetermined time has elapsed, the supply of thinner from the tank 34 is stopped. Then, the pump 47 is operated to discharge the thinner, and the thinner is supplied to the bubble sensor 64 via the pipe 45, the dummy filter 30, and the pipe 41 in this order, and the presence or absence of bubbles is detected (FIG. 21).

If air bubbles are detected, it is assumed that the thinner filling is insufficient, and the thinner is supplied from the tank 34 described in FIG. 20 to the downstream side of the piping system 3 again. Then, along with the supply of this thinner, the storage space 49 is gradually expanded again. After that, the bubble detection described in FIG. 21 is performed again. If no bubbles are detected, step S41 is ended and the next thinner purge step S42 is started. This initiation may be determined by the user as described above, or may be initiated automatically. By using the bubble sensor 64 to determine the filling state of thinner in the piping system 3 in this way, thinner can be reliably supplied to the entire piping system 3 and the cleanliness of the piping system 3 can be improved.

Incidentally, the tank 34 may be configured to be connected to a thinner supply mechanism so that the thinner can be filled in the tank 34 in step S2. In that case, for example, in step S2, after purging the resist in the piping system 3 as described above, the tank 34 is filled with thinner, and the thinner is supplied to each part of the piping system 3 for cleaning in the same manner as in step S41. Thereafter, _N2 gas is supplied from the upstream side of the piping system 3 in a predetermined order to purge the thinner.

This order is partially shown. For example, the valve V1 downstream of the dummy filter 30, the valves V9 and V10 of the pipe 45 are closed, and the valve V6 of the pipe 41 of the dummy filter 30 is opened. In this state, _N2 gas is supplied to the tank 34 bypassing the resist bottle RB, and _N2 gas is supplied to the downstream side of the pipe 41 to remove the thinner in the path. Next, the valve V1 is opened, while the valve V6 of the pipe 41 of the dummy filter 30 is closed, and the thinner in the path from the tank 34 to the nozzle 31 is removed. That is, _N2 gas is supplied as shown in FIG. 9 to perform purging. After supplying _N2 gas in this way, the above-mentioned steps S3, S41, and S42 are executed. Therefore, in step S41, thinner is supplied to the pipe through which _N2 gas has already flowed.

Incidentally, in purging the resist in step S2 and in each of steps S41 and S42, it has been explained that the fluid ( _N2 gas or thinner) is supplied in sequence to each part of the piping system 3. In supplying the fluid in sequence in this way, the fluid can be supplied in the same sequence as the _N2 gas supply sequence when purging the thinner in step S2 described above.

In steps S2 and S42, the resist or thinner, which has a higher specific gravity than the _N2 gas, is purged with the _N2 gas. When purging in this way, _{N2 gas} is sequentially applied to each part of the piping system 3 as described above. Supply gas. As a result, the _N2 gas flows through the supplied area at a relatively high flow rate, so even if there is a difference in specific gravity between the _N2 gas and the resist and thinner as described above, the N2 gas can be applied more reliably and quickly. Resist and thinner can be removed.

In step S41, _N2 gas is supplied to each part in the piping system 3 in sequence as described above. This allows the thinner to flow at a relatively high flow rate, and is expected to thoroughly clean the flow path even if there is a relatively narrow flow path before reaching the nozzle 31 or the piping 32. Although it has been described that _N2 gas and thinner are supplied to each part of the piping system 3 in steps S2 and S4, _N2 gas and thinner may be supplied all at once from the upstream side.

The liquid processing apparatus of the present disclosure is not limited to a configuration in which a resist is applied to form a resist film. For example, a device that forms an anti-reflective film by applying a processing solution for forming an anti-reflective film, a device that forms an insulating film by applying a processing solution for forming an insulating film, and a device that performs development by supplying a developer. The technology of the present disclosure may be applied to a device or a device that supplies an adhesive for bonding wafers W together. Therefore, the cleaning liquid used is one that corresponds to the processing liquid in the liquid processing apparatus, and is not limited to thinner.

By the way, the flow consisting of steps S1 to S10 above has been described as a flow for recovering when an abnormality occurs during processing of the wafer W, but it may also be applied when a new device is started up (assembled). . In that case, wetting of the filter 33 may be performed separately, for example, using another device. Further, the technology of the present disclosure may be applied to a developing device that supplies a developer to the wafer W or a device that applies an adhesive for bonding the wafers W together. Although a diaphragm pump is exemplified as a pump, the type of pump is not limited, and for example, a bellows pump or the like may be used. Note that the embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. The embodiments described above may be omitted, replaced, modified, or combined in various ways without departing from the scope and spirit of the appended claims.

RB Resist bottle W Wafer 1 Resist coating device 3 Piping system 31 Piping 33 Filter 47 Pump

Claims (19)

a processing step in which the processing liquid is caused to flow from a processing liquid supply source to a downstream side of a supply path having a filter therebetween by a pump provided in a flow path system including the supply path, and the processing liquid is supplied to the substrate from a supply unit forming the downstream end of the supply path, thereby processing the substrate;
a cleaning step of supplying a cleaning solution to the flow path system to clean the flow path system;
a supply channel cleaning step, which is included in the cleaning step, for supplying the cleaning liquid from the upstream side to the downstream side of the supply channel in a cleaning state in which a pressure loss of a fluid in the supply channel is lower than a pressure loss in the treatment step, to clean the supply channel;
Equipped with
The cleaning step is included in a step of eliminating an abnormality that is carried out before carrying out the processing step,
The abnormality resolving step includes a canceling step of canceling the cleaning state.
a processing liquid filling step, which is performed after the releasing step, of supplying the processing liquid from the processing liquid supply source to the flow path system to fill it;
a processing liquid purging step, which is carried out after the processing liquid filling step, in which the processing liquid is caused to flow from the upstream side to the downstream side of the supply path by the pump at a flow rate lower than a flow rate of the processing liquid in the processing step, and is discharged from the supply part;
A method for operating a liquid treatment apparatus comprising : The cleaning step is included in an abnormality elimination step performed before the treatment step,
The abnormality resolving step includes a cleaning liquid purge step of supplying a purge gas to the flow path system to purge the flow path after the cleaning step, and the cleaning liquid purging step includes removing the supply path in the cleaning state. 2. The method of operating a liquid processing apparatus according to claim 1, further comprising the step of supplying the purge gas from an upstream side to a downstream side. 3. The method of operating a liquid processing apparatus according to claim 1 , wherein the processing liquid filling step includes a step of passing the processing liquid through the flow path system at a flow rate higher than a flow rate in the processing liquid purging step. The process of eliminating the abnormality is as follows:
The process is performed after the processing liquid purge step, and the pump is operated at a discharge pressure higher than the discharge pressure in the processing step, and the processing liquid is caused to flow from the upstream side to the downstream side of the supply path to the supply section. 4. The method of operating a liquid processing apparatus according to claim 1, further comprising a pressurizing step of discharging the liquid from the liquid. The abnormality eliminating step includes:
a determination step of determining whether or not there is an abnormality in the processing liquid in the flow path system after the processing liquid purging step,
The operating method according to claim 4 , wherein the pressurizing step is performed based on the result of the determination step. The determination step includes:
capturing an image of the processing liquid in the supply unit to obtain image data;
determining the presence or absence of the abnormality based on the image data;
The method of operating a liquid processing apparatus according to claim 5, comprising: 7. The method of operating a liquid processing apparatus according to claim 1 , wherein the processing liquid purging step includes a step of flowing the processing liquid at different flow rates during mutually different periods. 8. The method for operating a liquid processing apparatus according to claim 1, wherein the cleaning state is a state in which a flow path forming member is attached in place of the filter in the supply path. 9. The method of operating a liquid treatment apparatus according to claim 1, wherein the cleaning step includes the step of circulating the cleaning liquid at different flow rates for different periods of time. The cleaning step includes a step of supplying the cleaning liquid from a cleaning liquid supply source to the flow path system, and expanding a storage space in the pump for storing the cleaning liquid in accordance with the progress of filling of the cleaning liquid in the flow path system. A method for operating a liquid processing apparatus according to any one of claims 1 to 9 . 11. The method according to claim 1 , wherein the cleaning step includes a step of supplying the cleaning liquid to a bubble detection unit provided in the flow path system and detecting a filling state of the cleaning liquid in the flow path system. How to operate liquid processing equipment. the flow path system includes a storage section in which the processing liquid is stored for performing the processing step;
12. The method of operating a liquid processing apparatus according to claim 1, wherein the cleaning step includes a step of supplying the cleaning liquid stored in the storage section in place of the processing liquid to the flow path system to which a purge gas for drying the flow path system has already been supplied. In a liquid processing apparatus in which a processing liquid from a processing liquid supply source is supplied to a substrate from a supply section constituting a downstream end of a supply path included in a flow path system by a pump,
a flow path system including the pump and to which a cleaning liquid is supplied and cleaned before the processing liquid is supplied;
It is possible to set the cleaning state to be lower than the pressure loss of the fluid when processing the substrate, and when the substrate is in the cleaning state, the cleaning liquid is supplied from the upstream side to the downstream side for cleaning. the supply path;
a control unit that outputs a control signal so that a processing step of supplying and processing the processing liquid to the substrate by the pump via a filter provided in the supply path when the cleaning state is released; and ,
The control unit includes:
As a step constituting an abnormality resolution flow performed before performing the processing step,
a processing liquid filling step performed after canceling the cleaning state and supplying the processing liquid from the processing liquid supply source to the flow path system to fill it;
Performed after the processing liquid filling step, the processing liquid is caused to flow from the upstream side to the downstream side of the supply path by the pump at a flow rate lower than the flow rate of the processing liquid in the processing step, and from the supply section. A liquid processing device that outputs a control signal to perform a processing liquid purge step to discharge the processing liquid . The liquid treatment device according to claim 13, wherein the control unit outputs a control signal so as to automatically perform at least one of a plurality of steps for circulating fluid in the flow path system in mutually different manners, thereby forming a flow for resolving an abnormality that is performed before performing the processing step. a notification unit that notifies the end of the first step after the first step is completed and before performing the next step;
an operation unit that performs an operation to start the next step;
15. The liquid processing apparatus according to claim 14 , wherein the liquid processing apparatus is provided with: 16. The liquid treatment apparatus according to claim 14 , wherein the automatic progress of the one step includes automatic progress of an operation sequence of the pump or an opening/closing sequence of a valve provided in the flow path system. As a step constituting an abnormality resolution flow performed before performing the processing step, a cleaning liquid that supplies the cleaning liquid to the flow path system for cleaning, and then supplies a purge gas to the flow path system to purge the flow path. Includes a purge step,
17. A purge gas supply unit according to claim 13 , wherein a purge gas supply unit is connected to the flow path system in order to supply the purge gas from the upstream side to the downstream side of the supply path in the cleaning state. Liquid processing equipment. As a step constituting a flow for resolving an abnormality which is performed before the processing step,
18. A liquid processing apparatus according to claim 13, wherein the control unit outputs a control signal so that after the cleaning state is released and the flow path system is filled with the processing liquid supplied from the processing liquid supply source, a processing liquid purging step is performed in which the pump causes the processing liquid to flow from the upstream side to the downstream side of the supply path at a flow rate lower than the flow rate of the processing liquid in the processing step, and the processing liquid is discharged from the supply unit. As a step constituting a flow for resolving an abnormality which is performed before the processing step,
20. The liquid processing apparatus according to claim 18, wherein the control unit outputs a control signal so as to perform a step that is performed after the processing liquid purging step, in which the pump operates at a discharge pressure higher than the discharge pressure in the processing step, and the processing liquid is caused to flow from the upstream side to the downstream side of the supply path and discharged from the supply unit.

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