JP7441175B2 - 半導体装置、及び電子機器 - Google Patents

半導体装置、及び電子機器 Download PDF

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JP7441175B2
JP7441175B2 JP2020556355A JP2020556355A JP7441175B2 JP 7441175 B2 JP7441175 B2 JP 7441175B2 JP 2020556355 A JP2020556355 A JP 2020556355A JP 2020556355 A JP2020556355 A JP 2020556355A JP 7441175 B2 JP7441175 B2 JP 7441175B2
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circuit
transistor
wiring
potential
terminal
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JPWO2020095140A5 (https=
JPWO2020095140A1 (ja
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肇 木村
義元 黒川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Theoretical Computer Science (AREA)
  • Biophysics (AREA)
  • Neurology (AREA)
  • Computer Hardware Design (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Evolutionary Computation (AREA)
  • Data Mining & Analysis (AREA)
  • Computational Linguistics (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2020556355A 2018-11-08 2019-10-28 半導体装置、及び電子機器 Active JP7441175B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024021696A JP2024055903A (ja) 2018-11-08 2024-02-16 半導体装置
JP2025094375A JP7854547B2 (ja) 2018-11-08 2025-06-05 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018210628 2018-11-08
JP2018210628 2018-11-08
PCT/IB2019/059204 WO2020095140A1 (ja) 2018-11-08 2019-10-28 半導体装置、及び電子機器

Related Child Applications (1)

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JP2024021696A Division JP2024055903A (ja) 2018-11-08 2024-02-16 半導体装置

Publications (3)

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JPWO2020095140A1 JPWO2020095140A1 (ja) 2021-12-23
JPWO2020095140A5 JPWO2020095140A5 (https=) 2022-10-14
JP7441175B2 true JP7441175B2 (ja) 2024-02-29

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JP2020556355A Active JP7441175B2 (ja) 2018-11-08 2019-10-28 半導体装置、及び電子機器
JP2024021696A Withdrawn JP2024055903A (ja) 2018-11-08 2024-02-16 半導体装置
JP2025094375A Active JP7854547B2 (ja) 2018-11-08 2025-06-05 半導体装置

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JP2025094375A Active JP7854547B2 (ja) 2018-11-08 2025-06-05 半導体装置

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US (2) US12453072B2 (https=)
JP (3) JP7441175B2 (https=)
WO (1) WO2020095140A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020126426A (ja) * 2019-02-04 2020-08-20 ソニー株式会社 演算装置、及び積和演算システム
TWI906891B (zh) 2019-02-15 2025-12-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
JP7480133B2 (ja) 2019-05-17 2024-05-09 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP7123860B2 (ja) * 2019-06-17 2022-08-23 株式会社東芝 演算装置
US20210125049A1 (en) * 2019-10-29 2021-04-29 Taiwan Semiconductor Manufacturing Co., Ltd. System for executing neural network
WO2021084717A1 (ja) * 2019-10-31 2021-05-06 日本電気株式会社 情報処理回路および情報処理回路の設計方法
JP7356393B2 (ja) * 2020-04-10 2023-10-04 ルネサスエレクトロニクス株式会社 半導体装置
CN115836293A (zh) * 2020-07-17 2023-03-21 株式会社半导体能源研究所 半导体装置及电子设备
KR20230039668A (ko) 2020-07-17 2023-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP7800930B2 (ja) * 2020-07-27 2026-01-16 ニックスラブ・インコーポレイテッド 電気信号を生成及び測定するためのシステム及び方法
US20230411386A1 (en) * 2022-06-20 2023-12-21 International Business Machines Corporation Method and structure of forming contacts and gates for staggered fet

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017108397A (ja) 2015-11-30 2017-06-15 株式会社半導体エネルギー研究所 信号処理回路、及び該信号処理回路を有する半導体装置
WO2017221584A1 (ja) 2016-06-20 2017-12-28 ソニー株式会社 表示装置及び電子機器
WO2018150295A1 (ja) 2017-02-15 2018-08-23 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7365713B2 (en) * 2001-10-24 2008-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP6392603B2 (ja) * 2013-09-27 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
KR102344782B1 (ko) * 2014-06-13 2021-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 입력 장치 및 입출력 장치
US9312280B2 (en) * 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2017010000A (ja) 2015-04-13 2017-01-12 株式会社半導体エネルギー研究所 表示装置
US20170221899A1 (en) * 2016-01-29 2017-08-03 Semiconductor Energy Laboratory Co., Ltd. Microcontroller System
US11055607B2 (en) * 2016-06-20 2021-07-06 International Business Machines Corporation Neural network using floating gate transistor
KR20210134066A (ko) 2016-08-03 2021-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 촬상 모듈, 전자 기기, 및 촬상 시스템
CN109643514B (zh) 2016-08-26 2023-04-04 株式会社半导体能源研究所 显示装置及电子设备
WO2018069785A1 (en) * 2016-10-12 2018-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and system using the same
JP7073090B2 (ja) 2016-12-28 2022-05-23 株式会社半導体エネルギー研究所 ニューラルネットワークを利用したデータ処理装置、電子部品、および電子機器
US11515873B2 (en) * 2018-06-29 2022-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017108397A (ja) 2015-11-30 2017-06-15 株式会社半導体エネルギー研究所 信号処理回路、及び該信号処理回路を有する半導体装置
WO2017221584A1 (ja) 2016-06-20 2017-12-28 ソニー株式会社 表示装置及び電子機器
WO2018150295A1 (ja) 2017-02-15 2018-08-23 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JP2024055903A (ja) 2024-04-19
JP2025131754A (ja) 2025-09-09
US20260020215A1 (en) 2026-01-15
US20210384193A1 (en) 2021-12-09
US12453072B2 (en) 2025-10-21
JP7854547B2 (ja) 2026-05-01
WO2020095140A1 (ja) 2020-05-14
JPWO2020095140A1 (ja) 2021-12-23

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