JP7437965B2 - プラズマ処理装置及び部材温度判定方法 - Google Patents

プラズマ処理装置及び部材温度判定方法 Download PDF

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Publication number
JP7437965B2
JP7437965B2 JP2020028222A JP2020028222A JP7437965B2 JP 7437965 B2 JP7437965 B2 JP 7437965B2 JP 2020028222 A JP2020028222 A JP 2020028222A JP 2020028222 A JP2020028222 A JP 2020028222A JP 7437965 B2 JP7437965 B2 JP 7437965B2
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Japan
Prior art keywords
high frequency
temperature
frequency power
plasma
processing container
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JP2020028222A
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English (en)
Japanese (ja)
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JP2021130864A5 (enExample
JP2021130864A (ja
Inventor
浩司 河村
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2020028222A priority Critical patent/JP7437965B2/ja
Priority to CN202110172174.6A priority patent/CN113299530B/zh
Priority to TW110104685A priority patent/TWI889755B/zh
Priority to KR1020210020440A priority patent/KR20210106910A/ko
Priority to US17/177,900 priority patent/US12400844B2/en
Publication of JP2021130864A publication Critical patent/JP2021130864A/ja
Publication of JP2021130864A5 publication Critical patent/JP2021130864A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP2020028222A 2020-02-21 2020-02-21 プラズマ処理装置及び部材温度判定方法 Active JP7437965B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020028222A JP7437965B2 (ja) 2020-02-21 2020-02-21 プラズマ処理装置及び部材温度判定方法
CN202110172174.6A CN113299530B (zh) 2020-02-21 2021-02-08 等离子体处理装置和构件温度判定方法
TW110104685A TWI889755B (zh) 2020-02-21 2021-02-08 電漿處理裝置及構件溫度判定方法
KR1020210020440A KR20210106910A (ko) 2020-02-21 2021-02-16 플라스마 처리 장치 및 부재 온도 판정 방법
US17/177,900 US12400844B2 (en) 2020-02-21 2021-02-17 Plasma processing apparatus and method of measuring temperature of members

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020028222A JP7437965B2 (ja) 2020-02-21 2020-02-21 プラズマ処理装置及び部材温度判定方法

Publications (3)

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JP2021130864A JP2021130864A (ja) 2021-09-09
JP2021130864A5 JP2021130864A5 (enExample) 2022-11-28
JP7437965B2 true JP7437965B2 (ja) 2024-02-26

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JP2020028222A Active JP7437965B2 (ja) 2020-02-21 2020-02-21 プラズマ処理装置及び部材温度判定方法

Country Status (5)

Country Link
US (1) US12400844B2 (enExample)
JP (1) JP7437965B2 (enExample)
KR (1) KR20210106910A (enExample)
CN (1) CN113299530B (enExample)
TW (1) TWI889755B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025523344A (ja) * 2022-06-07 2025-07-23 ラム リサーチ コーポレーション 温度推定に基づく高周波システム保護
WO2025004430A1 (ja) * 2023-06-27 2025-01-02 東京エレクトロン株式会社 プラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138208A (ja) 1999-09-13 2000-05-16 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP2010166006A (ja) 2009-01-19 2010-07-29 Tokyo Electron Ltd フォーカスリングの加熱方法、プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP2010251723A (ja) 2009-03-27 2010-11-04 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131599A (ja) * 1997-07-08 1999-02-02 Sumitomo Metal Ind Ltd プラズマ処理装置における予熱方法及びプラズマ処理装置
JP4294775B2 (ja) 1998-12-01 2009-07-15 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP4024053B2 (ja) * 2002-02-08 2007-12-19 キヤノンアネルバ株式会社 高周波プラズマ処理方法及び高周波プラズマ処理装置
US7794615B2 (en) * 2005-03-31 2010-09-14 Tokyo Electron Limited Plasma processing method and apparatus, and autorunning program for variable matching unit
WO2010080587A1 (en) * 2008-12-18 2010-07-15 Robertson Transformer Co. Variable load line gas curve intercept method to optimize system efficiency
US10325759B2 (en) * 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
JP6488150B2 (ja) * 2015-02-27 2019-03-20 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6793019B2 (ja) * 2016-11-28 2020-12-02 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138208A (ja) 1999-09-13 2000-05-16 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP2010166006A (ja) 2009-01-19 2010-07-29 Tokyo Electron Ltd フォーカスリングの加熱方法、プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP2010251723A (ja) 2009-03-27 2010-11-04 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
KR20210106910A (ko) 2021-08-31
JP2021130864A (ja) 2021-09-09
CN113299530A (zh) 2021-08-24
TWI889755B (zh) 2025-07-11
CN113299530B (zh) 2025-09-12
US20210265145A1 (en) 2021-08-26
US12400844B2 (en) 2025-08-26
TW202135163A (zh) 2021-09-16

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