TWI889755B - 電漿處理裝置及構件溫度判定方法 - Google Patents

電漿處理裝置及構件溫度判定方法

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Publication number
TWI889755B
TWI889755B TW110104685A TW110104685A TWI889755B TW I889755 B TWI889755 B TW I889755B TW 110104685 A TW110104685 A TW 110104685A TW 110104685 A TW110104685 A TW 110104685A TW I889755 B TWI889755 B TW I889755B
Authority
TW
Taiwan
Prior art keywords
temperature
plasma
frequency power
processing
treatment
Prior art date
Application number
TW110104685A
Other languages
English (en)
Chinese (zh)
Other versions
TW202135163A (zh
Inventor
河村浩司
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202135163A publication Critical patent/TW202135163A/zh
Application granted granted Critical
Publication of TWI889755B publication Critical patent/TWI889755B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
TW110104685A 2020-02-21 2021-02-08 電漿處理裝置及構件溫度判定方法 TWI889755B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020028222A JP7437965B2 (ja) 2020-02-21 2020-02-21 プラズマ処理装置及び部材温度判定方法
JP2020-028222 2020-02-21

Publications (2)

Publication Number Publication Date
TW202135163A TW202135163A (zh) 2021-09-16
TWI889755B true TWI889755B (zh) 2025-07-11

Family

ID=77319015

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110104685A TWI889755B (zh) 2020-02-21 2021-02-08 電漿處理裝置及構件溫度判定方法

Country Status (5)

Country Link
US (1) US12400844B2 (enExample)
JP (1) JP7437965B2 (enExample)
KR (1) KR20210106910A (enExample)
CN (1) CN113299530B (enExample)
TW (1) TWI889755B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025523344A (ja) * 2022-06-07 2025-07-23 ラム リサーチ コーポレーション 温度推定に基づく高周波システム保護
WO2025004430A1 (ja) * 2023-06-27 2025-01-02 東京エレクトロン株式会社 プラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131599A (ja) * 1997-07-08 1999-02-02 Sumitomo Metal Ind Ltd プラズマ処理装置における予熱方法及びプラズマ処理装置
US20100181294A1 (en) * 2009-01-19 2010-07-22 Tokyo Electron Limited Focus ring heating method, plasma etching method, plasma etching apparatus, and computer-readable storage medium
TW201119524A (en) * 2009-03-27 2011-06-01 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4294775B2 (ja) 1998-12-01 2009-07-15 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP3534660B2 (ja) 1999-09-13 2004-06-07 株式会社日立製作所 プラズマ処理装置
JP4024053B2 (ja) * 2002-02-08 2007-12-19 キヤノンアネルバ株式会社 高周波プラズマ処理方法及び高周波プラズマ処理装置
US7794615B2 (en) * 2005-03-31 2010-09-14 Tokyo Electron Limited Plasma processing method and apparatus, and autorunning program for variable matching unit
WO2010080587A1 (en) * 2008-12-18 2010-07-15 Robertson Transformer Co. Variable load line gas curve intercept method to optimize system efficiency
US10325759B2 (en) * 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
JP6488150B2 (ja) * 2015-02-27 2019-03-20 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6793019B2 (ja) * 2016-11-28 2020-12-02 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131599A (ja) * 1997-07-08 1999-02-02 Sumitomo Metal Ind Ltd プラズマ処理装置における予熱方法及びプラズマ処理装置
US20100181294A1 (en) * 2009-01-19 2010-07-22 Tokyo Electron Limited Focus ring heating method, plasma etching method, plasma etching apparatus, and computer-readable storage medium
TW201119524A (en) * 2009-03-27 2011-06-01 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
KR20210106910A (ko) 2021-08-31
JP2021130864A (ja) 2021-09-09
CN113299530A (zh) 2021-08-24
JP7437965B2 (ja) 2024-02-26
CN113299530B (zh) 2025-09-12
US20210265145A1 (en) 2021-08-26
US12400844B2 (en) 2025-08-26
TW202135163A (zh) 2021-09-16

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