KR20210106910A - 플라스마 처리 장치 및 부재 온도 판정 방법 - Google Patents

플라스마 처리 장치 및 부재 온도 판정 방법 Download PDF

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Publication number
KR20210106910A
KR20210106910A KR1020210020440A KR20210020440A KR20210106910A KR 20210106910 A KR20210106910 A KR 20210106910A KR 1020210020440 A KR1020210020440 A KR 1020210020440A KR 20210020440 A KR20210020440 A KR 20210020440A KR 20210106910 A KR20210106910 A KR 20210106910A
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KR
South Korea
Prior art keywords
processing
power
plasma
temperature
unit
Prior art date
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Pending
Application number
KR1020210020440A
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English (en)
Korean (ko)
Inventor
고지 가와무라
Original Assignee
도쿄엘렉트론가부시키가이샤
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Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20210106910A publication Critical patent/KR20210106910A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020210020440A 2020-02-21 2021-02-16 플라스마 처리 장치 및 부재 온도 판정 방법 Pending KR20210106910A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020028222A JP7437965B2 (ja) 2020-02-21 2020-02-21 プラズマ処理装置及び部材温度判定方法
JPJP-P-2020-028222 2020-02-21

Publications (1)

Publication Number Publication Date
KR20210106910A true KR20210106910A (ko) 2021-08-31

Family

ID=77319015

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210020440A Pending KR20210106910A (ko) 2020-02-21 2021-02-16 플라스마 처리 장치 및 부재 온도 판정 방법

Country Status (5)

Country Link
US (1) US12400844B2 (enExample)
JP (1) JP7437965B2 (enExample)
KR (1) KR20210106910A (enExample)
CN (1) CN113299530B (enExample)
TW (1) TWI889755B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025523344A (ja) * 2022-06-07 2025-07-23 ラム リサーチ コーポレーション 温度推定に基づく高周波システム保護
WO2025004430A1 (ja) * 2023-06-27 2025-01-02 東京エレクトロン株式会社 プラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000167385A (ja) 1998-12-01 2000-06-20 Sumitomo Metal Ind Ltd マイクロ波プラズマ処理装置及びその処理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1131599A (ja) * 1997-07-08 1999-02-02 Sumitomo Metal Ind Ltd プラズマ処理装置における予熱方法及びプラズマ処理装置
JP3534660B2 (ja) 1999-09-13 2004-06-07 株式会社日立製作所 プラズマ処理装置
JP4024053B2 (ja) * 2002-02-08 2007-12-19 キヤノンアネルバ株式会社 高周波プラズマ処理方法及び高周波プラズマ処理装置
US7794615B2 (en) * 2005-03-31 2010-09-14 Tokyo Electron Limited Plasma processing method and apparatus, and autorunning program for variable matching unit
WO2010080587A1 (en) * 2008-12-18 2010-07-15 Robertson Transformer Co. Variable load line gas curve intercept method to optimize system efficiency
JP5203986B2 (ja) 2009-01-19 2013-06-05 東京エレクトロン株式会社 フォーカスリングの加熱方法、プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
US10325759B2 (en) * 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
JP6488150B2 (ja) * 2015-02-27 2019-03-20 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6793019B2 (ja) * 2016-11-28 2020-12-02 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000167385A (ja) 1998-12-01 2000-06-20 Sumitomo Metal Ind Ltd マイクロ波プラズマ処理装置及びその処理方法

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Publication number Publication date
JP2021130864A (ja) 2021-09-09
CN113299530A (zh) 2021-08-24
JP7437965B2 (ja) 2024-02-26
TWI889755B (zh) 2025-07-11
CN113299530B (zh) 2025-09-12
US20210265145A1 (en) 2021-08-26
US12400844B2 (en) 2025-08-26
TW202135163A (zh) 2021-09-16

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