JP7427857B2 - シランコーティングの適用方法 - Google Patents
シランコーティングの適用方法 Download PDFInfo
- Publication number
- JP7427857B2 JP7427857B2 JP2019560247A JP2019560247A JP7427857B2 JP 7427857 B2 JP7427857 B2 JP 7427857B2 JP 2019560247 A JP2019560247 A JP 2019560247A JP 2019560247 A JP2019560247 A JP 2019560247A JP 7427857 B2 JP7427857 B2 JP 7427857B2
- Authority
- JP
- Japan
- Prior art keywords
- silane
- molecules
- chamber
- water
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910000077 silane Inorganic materials 0.000 title claims description 94
- 238000000576 coating method Methods 0.000 title claims description 66
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims description 65
- 239000011248 coating agent Substances 0.000 title claims description 63
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 31
- -1 silane compound Chemical class 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 229910052729 chemical element Inorganic materials 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 13
- 238000000151 deposition Methods 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 11
- 125000003118 aryl group Chemical group 0.000 description 9
- 150000004756 silanes Chemical class 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000000383 hazardous chemical Substances 0.000 description 4
- 231100000206 health hazard Toxicity 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000001165 hydrophobic group Chemical group 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 125000004404 heteroalkyl group Chemical group 0.000 description 2
- 125000001072 heteroaryl group Chemical group 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002195 soluble material Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 125000003107 substituted aryl group Chemical group 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 239000013461 intermediate chemical Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
- G02F1/133548—Wire-grid polarisers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
- C09K2323/03—Viewing layer characterised by chemical composition
- C09K2323/033—Silicon compound, e.g. glass or organosilicon
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Polarising Elements (AREA)
- Surface Treatment Of Optical Elements (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762537270P | 2017-07-26 | 2017-07-26 | |
| US201762537291P | 2017-07-26 | 2017-07-26 | |
| US62/537,291 | 2017-07-26 | ||
| US62/537,270 | 2017-07-26 | ||
| US16/028,039 US10752989B2 (en) | 2017-07-26 | 2018-07-05 | Methods of applying silane coatings |
| US16/028,039 | 2018-07-05 | ||
| PCT/US2018/041117 WO2019022943A1 (en) | 2017-07-26 | 2018-07-06 | METHODS OF APPLICATION OF SILANE COATINGS |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020528563A JP2020528563A (ja) | 2020-09-24 |
| JP2020528563A5 JP2020528563A5 (enExample) | 2021-08-12 |
| JP7427857B2 true JP7427857B2 (ja) | 2024-02-06 |
Family
ID=65040828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019560247A Active JP7427857B2 (ja) | 2017-07-26 | 2018-07-06 | シランコーティングの適用方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US10752989B2 (enExample) |
| JP (1) | JP7427857B2 (enExample) |
| WO (1) | WO2019022943A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11079528B2 (en) | 2018-04-12 | 2021-08-03 | Moxtek, Inc. | Polarizer nanoimprint lithography |
| US11746418B2 (en) * | 2018-12-03 | 2023-09-05 | Moxtek, Inc. | Chemical vapor deposition of thick inorganic coating on a polarizer |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006507517A (ja) | 2002-05-09 | 2006-03-02 | モックステック・インコーポレーテッド | 耐蝕性ワイヤ−グリッド偏光子及び製造法 |
| JP2007505220A (ja) | 2004-06-04 | 2007-03-08 | アプライド マイクロストラクチャーズ,インコーポレイテッド | 酸化層により接着される多層コーティングの制御された気相堆積 |
| JP2012185349A (ja) | 2011-03-07 | 2012-09-27 | Seiko Epson Corp | レンズ及びレンズの製造方法 |
| JP2014526432A (ja) | 2011-09-19 | 2014-10-06 | ピルキントン グループ リミテッド | ガラス基板上にシリカコーティングを形成するプロセス |
| US20160291209A1 (en) | 2015-04-03 | 2016-10-06 | Brigham Young University | Wire Grid Polarizer with Silane Protective Coating |
| US20160289458A1 (en) | 2015-04-03 | 2016-10-06 | Moxtek, Inc. | Hydrophobic Phosphonate and Silane Chemistry |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004138762A (ja) | 2002-10-17 | 2004-05-13 | Dainippon Printing Co Ltd | シリカ薄膜とその製造装置、及びシリカ薄膜を用いた透明積層フィルム |
| DE10248775A1 (de) * | 2002-10-18 | 2004-04-29 | Swissoptic Ag | Gasphasenabscheidung von perfluorierten Alkylsilanen |
| WO2005121397A2 (en) | 2004-06-04 | 2005-12-22 | Applied Microstructures, Inc. | Controlled vapor deposition of multilayered coatings adhered by an oxide layer |
| JP5371495B2 (ja) * | 2009-03-09 | 2013-12-18 | 旭化成イーマテリアルズ株式会社 | 高耐久性ワイヤグリッド偏光板 |
| JP2011216862A (ja) | 2010-03-16 | 2011-10-27 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
| US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
| JP2012032690A (ja) * | 2010-08-02 | 2012-02-16 | Seiko Epson Corp | 光学物品およびその製造方法 |
| US9703028B2 (en) | 2015-04-03 | 2017-07-11 | Moxtek, Inc. | Wire grid polarizer with phosphonate protective coating |
-
2018
- 2018-07-05 US US16/028,039 patent/US10752989B2/en active Active
- 2018-07-06 JP JP2019560247A patent/JP7427857B2/ja active Active
- 2018-07-06 WO PCT/US2018/041117 patent/WO2019022943A1/en not_active Ceased
-
2020
- 2020-07-20 US US16/933,090 patent/US11822182B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006507517A (ja) | 2002-05-09 | 2006-03-02 | モックステック・インコーポレーテッド | 耐蝕性ワイヤ−グリッド偏光子及び製造法 |
| JP2007505220A (ja) | 2004-06-04 | 2007-03-08 | アプライド マイクロストラクチャーズ,インコーポレイテッド | 酸化層により接着される多層コーティングの制御された気相堆積 |
| JP2012185349A (ja) | 2011-03-07 | 2012-09-27 | Seiko Epson Corp | レンズ及びレンズの製造方法 |
| JP2014526432A (ja) | 2011-09-19 | 2014-10-06 | ピルキントン グループ リミテッド | ガラス基板上にシリカコーティングを形成するプロセス |
| US20160291209A1 (en) | 2015-04-03 | 2016-10-06 | Brigham Young University | Wire Grid Polarizer with Silane Protective Coating |
| US20160289458A1 (en) | 2015-04-03 | 2016-10-06 | Moxtek, Inc. | Hydrophobic Phosphonate and Silane Chemistry |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2020528563A (ja) | 2020-09-24 |
| US20200347495A1 (en) | 2020-11-05 |
| US10752989B2 (en) | 2020-08-25 |
| US20190032202A1 (en) | 2019-01-31 |
| WO2019022943A1 (en) | 2019-01-31 |
| US11822182B2 (en) | 2023-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7534087B2 (ja) | パターニング応用のための選択的堆積スキーム | |
| TWI772516B (zh) | 藉由化學蝕刻去除選擇性沉積缺陷 | |
| TWI722301B (zh) | 在金屬材料表面上沉積阻擋層的方法 | |
| JP6761028B2 (ja) | コンフォーマルな金属又はメタロイド窒化ケイ素膜を堆積するための方法及びその結果として得られる膜 | |
| TWI549958B (zh) | 鉬(iv)醯胺前驅物及其於原子層沈積之用途 | |
| US11164745B2 (en) | Method of enhancing selective deposition by cross-linking of blocking molecules | |
| JP2021520640A (ja) | 原子層堆積で使用するための重合性自己組織化単分子層 | |
| JP7614215B2 (ja) | 原子層蒸着および化学気相蒸着用基板表面改質剤およびこれを利用した基板表面の改質方法 | |
| US20120045884A1 (en) | Protective thin films for use during fabrication of semiconductors, mems, and microstructures | |
| US20140308822A1 (en) | Deposition technique for depositing a coating on a device | |
| Sampson et al. | Inhibiting metal oxide atomic layer deposition: beyond zinc oxide | |
| JP7427857B2 (ja) | シランコーティングの適用方法 | |
| TWI810141B (zh) | 用於將自組裝單層沈積於基板上的設備以及自組裝單層形成和選擇性沉積的方法 | |
| US10662526B2 (en) | Method for selective deposition using a base-catalyzed inhibitor | |
| Kim et al. | Large‐area, conformal, and uniform synthesis of hybrid polymeric film via initiated chemical vapor deposition | |
| Choi et al. | Molecular Mechanism of Selective Al2O3 Atomic Layer Deposition on Self-Assembled Monolayers | |
| US20150346391A1 (en) | Method for forming anti stiction coating and anti stiction coating thereof | |
| KR100697505B1 (ko) | 박막 필름 및 코팅을 생성하기 위해 반응성 증기를 제어도포하는 장치 및 방법 | |
| KR101184924B1 (ko) | 금속층 형성 방법 | |
| KR101672984B1 (ko) | 표면기능화를 이용한 초박막 연속 금속 박막의 제조방법 | |
| US11201051B2 (en) | Method for layer by layer growth of conformal films | |
| JP2023143793A (ja) | 基板処理方法及びこれを用いた選択的蒸着方法 | |
| KR20250067018A (ko) | 점착 방지 층 성막 | |
| KR20240148739A (ko) | 기판 패터닝 방법, 시스템 및 구조 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210705 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210705 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220715 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220726 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220913 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20221206 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20230123 |
|
| C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20230124 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20230123 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240104 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7427857 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |