Classifications

• • G—PHYSICS
  • G02—OPTICS
  • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
  • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
  • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
  • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
  • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
  • G02F1/1333—Constructional arrangements; Manufacturing methods
  • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
  • G02F1/133528—Polarisers
  • G02F1/133548—Wire-grid polarisers
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/40—Oxides
  • C23C16/401—Oxides containing silicon
  • C23C16/402—Silicon dioxide
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
  • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
  • G02B1/14—Protective coatings, e.g. hard coatings
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
  • C09K2323/03—Viewing layer characterised by chemical composition
  • C09K2323/033—Silicon compound, e.g. glass or organosilicon
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/30—Polarising elements
  • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
  • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles

Definitions

• the present application is related generally to silane chemistry used as a protective surface layer on a wire grid polarizer.
• Some devices e.g . wire grid polarizers
• wire grid polarizers have small, delicate features which can include nm-sized dimensions. Such delicate featu res can be damaged by tensile forces in water or other liquid on the device. These delicate features may need protection from such tensile forces.
• disadvantages of such methods can include non-uniform protective chemistry thickness, waste disposal, health hazards, rinsing residue, and damage to manufactu ring equipment.
• protective chemistry that can protect devices from corrosion or other damage from liquids, particularly with protective chemistry that has high-temperature du rability. It has also been recognized that it would be advantageous to provide methods of application of protective chemistry that avoid dissolving the device during application, that provide a more uniform protective chemistry thickness, that minimize waste disposal problems and health hazards, that avoid leaving rinsing residue, and that avoid or minimize damage to manufacturing
• the present invention is directed to various em bodiments of a method of depositing a silane chemical that satisfy these needs. Each embodiment may satisfy one, some, or all of these needs.
• the method can comprise vapor depositing a siiane chemical onto a wire grid polarizer by placing the wire grid polarizer into a chamber and introducing a siiane chemical and water into the chamber, the siiane chemical and the water being in a gaseous phase in the chamber.
• the method can further comprise (a) maintaining the siiane chemical and the water simultaneously in the gaseous phase in the chamber, (b) reacting the siiane chemical and the water in the chamber to form (R 1 )2Si(OH)2 molecules, R 1 Si(OH) 3 molecules, or both, where each R 1 is independently any chemical element or group, and (c) forming a siiane coating on the device from a chemical reaction of the (R 1 )2Si(OH)2 molecules, R 1 Si(OH) 3 molecules, or both, with the device and with other (R 1 )2Si(OH)2 molecules, R 1 Si(OH) 3 molecules, or both.
• the method can further comprise forming a siiane coating with multiple layers on the device, with siiane in each layer chemically bonding to siiane in an adjacent layer, from a chemical reaction of the
• FIG. 1 is a schematic, cross-sectional side-view of a chamber 13 with a device 10 therein, which chamber 13 can be used for vapor deposition of a siiane chemical onto the device 10, in accordance with an embodiment of the present invention .
• FIG. 2 is a schematic, cross-sectional side-view of a coated device 20 comprising a device 10 with a siiane coating 24, in accordance with an
• FIG. 3 is a schematic, cross-sectional side-view of a coated device 30 comprising a device 10 with a conformal coating of silicon dioxide 34 and a siiane coating 24 on the device 10, in accordance with an embodiment of the present invention.
• alkyl refers to branched, unbranched, cyclic, saturated, unsaturated, substituted, unsubstituted, and heteroalkyl hydrocarbon groups.
• substituted alkyl refers to an alkyl substituted with one or more substituent groups
• heteroalkyl refers to an alkyl in which at least one carbon atom is replaced with a heteroatom.
• the alkyl can be relatively small to facilitate vapor deposition, such as for example with ⁇ 2 carbon atoms, ⁇ 3 carbon atoms, ⁇ 5 carbon atoms, or ⁇ 10 carbon atoms.
• aryl refers to a group containing a single aromatic ring or multiple aromatic rings that are fused together or linked (such that the different aromatic rings are bound to a common group).
• substituted aryl refers to an aryl group comprising one or more substituent groups.
• heteroaryl refers to an aryl group in which at least one carbon atom is replaced with a heteroatom. If not otherwise indicated, the term “aryl” includes unsubstituted aryl, substituted aryl, and heteroaryl.
• conformal coating means a thin film which conforms to the contours of feature topology.
• nm means nanometer(s).
• pascal As used herein, the term "Pa” means pascal, the SI unit of pressure.
• X includes a bond to the device
• other similar phrases mean a direct bond between the chemical and the device 10 or a bond to intermediate chemical(s) or layer(s) (e.g. layer of silicon dioxide 34) which is/are bonded to the device 10.
• additional layer(s) can be other conformal-coating(s).
• a method of vapor depositing a silane chemical onto a device 10 can comprise some or all of the following steps, which can be performed in the following order or other order if so specified. Some of the steps can be
• the method can comprise (1) placing the device 10 into a chamber 13; (2) applying a conformal coating of silicon dioxide 34 on the device 10; (3) introducing a silane chemical and water into the chamber 13; (4) reacting the silane chemical and the water in the chamber 13 to form R ⁇ COH ⁇ molecules, (R 1 ) 2 Si(OH)2 molecules, or both ; (5) forming a silane coating 24 on the device 10 from a chemical reaction of the R 1 Si(OH)3 /
• steps 1 & 2 can be reversed if the conformal coating of silicon dioxide 34 is applied in a different tool than the chamber 13.
• examples of thicknesses T 34 of the conformal coating of silicon dioxide 34 include > 0.5 nm or > 5 nm ; and ⁇ 15 nm, ⁇ 30 nm, ⁇ 45 nm, or ⁇ 60 nm .
• This conformal coating of silicon dioxide 34 can aid the adhesion of the silane coating 24 described below.
• the silane chemical and/or water can be introduced as gases, or can be introduced as liquids that phase change to gases in the chamber.
• Exam ples of the silane chemical include (R 1 ) 2 Si(R 2 ) 2 , R 1 Si(R 2 ) 3 , and Si(R 2 ) 4 molecules.
• Each R 1 can be any chemical element or group, such as for example a hydrophobic group, and is further described below.
• Each R 2 can independently be a reactive group such as for example -CI, -OR 3 , -OCOR 3 , - N (R 3 ) 2 , or -OH .
• Each R 3 can independently be -CH 3 , -CH 2 CH 3 , -CH 2 CH 2 CH 3 , any other alkyl group, an aryl group, or com binations thereof.
• the reactive groups R 2 can react with water, thus forming (R 1 ) 2 Si(OH) 2 , R 1 Si(OH) 3 , and Si(OH) 4 molecu les respectively.
• the (R 1 ) 2 Si(OH) 2 , R ⁇ KOhOs, and Si(OH) 4 molecules can be formed in the gaseous phase.
• the silane chemical can be introduced first, before introduction of the water, and retained as a gas in the chamber 13 for a period of time, such as for example > 5 minutes, > 15 minutes, > 25 minutes and ⁇ 35 minutes, ⁇ 60 minutes, or ⁇ 120 minutes.
• Examples of pressure of the chamber 13 while retaining the silane chemical in the chamber 13 include > 1 Pa, > 5 Pa, > 10 Pa, > 50 Pa, or > 100 Pa and ⁇ 500 Pa, ⁇ 1000 Pa, ⁇ 5000 Pa, or ⁇ 10,000 Pa .
• the water can be introduced into the chamber and retained for a period of time, such as for example > 5 minutes, > 25 minutes, > 50 minutes, or > 75 minutes and ⁇ 100 minutes, ⁇ 150 minutes, or ⁇ 200 minutes.
• Examples of pressure of the chamber 13 while retaining the water in the chamber 13 include > 100 Pa, > 500 Pa, or > 1000 Pa and ⁇ 5000 Pa, ⁇ 10,000 Pa, or ⁇ 50,000 Pa. Use of a low pressure can allow the silane chemical and the water to be in the gaseous phase at a lower temperature.
• Step 4 can also include maintaining the silane chemical and the water simultaneously in the gaseous phase in the chamber for a period of time.
• a longer period of time can result in improved coverage of the silane coating 24 on the device 10 and/or a thicker silane coating 24 that includes multiple layers.
• this time can be > 5 minutes, > 25 minutes, > 50 minutes, or > 75 minutes and ⁇ 100 minutes, ⁇ 150 minutes, or ⁇ 200 minutes. This period of time is one factor in controlling coverage and thickness T24 of the silane coating 24 on the device 10.
• Step 5 can include forming a silane coating 24 on the device 10 with multiple layers.
• Silane in the (R 1 ) 2 Si(OH) 2 , R 1 Si(OH) 3 , and Si(0H) 4 molecules can bond to the device 10 and with other (R 1 ) 2 Si(OH) 2 , R 1 Si(OH) 3 , and Si(OH) 4 molecules, thus cross-linking and forming multiple layers.
• the bond between layers of silane can be a Si-O-Si bond.
• Step 5 can occur simultaneously with step 3, step 4, or both.
• Step 6 can be useful for formation of an inert silane coating 24, by using R2Si(CH3)3 to replace -OH, at the end of a silane polymer chain, with CH3.
• An amount of water gas in the chamber, during one or more of steps 3-6, can be important for optimal deposition of the silane coating 24.
• water gas density in the chamber can be > 0.01 g/m 3 , > 0.1 g/m 3 , > 0.3 g/m 3 , or > 1 g/m 3 ; and ⁇ 5 g/m 3 , ⁇ 10 g/m 3 , ⁇ 30 g/m 3 , or ⁇ 100 g/m 3 .
• the silane coating 24 with multiple-layers can be the result of including (R 1 ) 2 Si(R 2 ) 2 molecules, R 1 Si(R 2 )3 molecules, Si(R 2 ) 4 molecules, or combinations thereof, in the silane chemical (R 2 is defined above).
• each R 2 can be a reactive group that will react with the water to form (R 1 ) 2 Si(OH) 2 molecules, R ⁇ OH ⁇ molecules, Si(OH) 4 , or combinations thereof.
• Each of the -OH functional groups attached to Si can react with the device 10 or the growing silane coating 24, resulting in a multi-layer coating.
• the above method can also include controlling an amount of the water in the chamber 13 to achieve a desired thickness T 24 of the silane coating 24.
• the silane chemical can include one or more of: (CH 3 )2Si(R 2 )2 molecules, (CH 3 )Si(R 2 )3 molecules, and Si(R 2 ) 4 molecules, where each R 2 can independently be a reactive group as described above.
• Such molecules can react with water to form (CH 3 )2Si(OH) 2 molecules, (CH 3 )Si(OH) 3 molecules, and Si(OH) 4 molecules respectively, which can react together to form one or more of chemical formulas ( 1) - (6) :
• T 2 4 of the silane coating 24 reduced process-waste disposal problems, reduced wasted silane chemical, reduced health hazards, reduced or no undesirable residue from rinsing, and use of with standard semiconductor processing equipment.
• One way to improve control of the amount of silane is to first dissolve the silane chemical in an organic solvent, then introduce the silane chemical dissolved in the organic solvent into the chamber 13.
• the device 10 can be an inlet liner for gas chromatography comprising a tube.
• the silane coating 24 can coat an internal surface of the tube, forming an inlet liner with a protective coating.
• the inert silane coatings 24 described herein can be particularly beneficial for use with such inlet liners.
• the device 10 can include nanometer-sized features 12 on a substrate 11.
• Such device 10 can be a wire grid polarizer and the nm-sized features 12 can be an array of wires, with nanometer-sized width w, height H, and pitch P.
• the silane coating 24 can coat a surface of the nm-sized features 12 and the substrate 11 as a conformal coating. Use of a conformal coating can allow the silane coating 24 to protect the device 10 with minimal adverse effect on performance of the device 10.
• the chemistry of the silane coating 24 described herein is particularly useful for the unique needs of a wire grid polarizer, including high-temperature durability, hydrophobicity, and minimal adverse effect on wire grid polarizer performance.
• the coated device 30 can further comprise a conformal coating of silicon dioxide 34, with a thickness T34 as described above, between the nm-sized features 12 and the silane coating 24.
• the silane coating 24 can include:
• R 1 can be any chemical element or group, such as for example a hydrophobic group or a hydrophiiic group.
• R 1 can comprise a carbon chain, which can include a perfluorinated group, such as for example CF 3 (CF2) n (CH2)m, where n and m are integers within the boundaries of: 4 ⁇ n ⁇ 10 and 2 ⁇ m ⁇ 5.
• CF2 CF 3
• CH2 n
• n and m are integers within the boundaries of: 4 ⁇ n ⁇ 10 and 2 ⁇ m ⁇ 5.
• Other examples of the hydrophobic group are described in USA Patent Publication Number US 2016/0291226, which is incorporated herein by reference. If the silane chemical includes (CH 3 )2Si(R 2 )2 molecules (R 2 defined above), the resulting silane coating 24 can be the following polymer, which can be resistant to high temperature:
• Integer r can have various values, such as for example > 5, > 10, > 100, or > 1000.
• Each R 1 can independently be any chemical element or group.
• R 1 can be -CH3, instead of more reactive chemistry, thus providing an inert, protective coating.
• Including R 1 Si(R 2 )3 molecules and/or Si(R 2 ) 4 molecules can facilitate formation of multiple layers in the silane coating 24.
• Silane in each layer can chemically bond to silane in an adjacent layer.
• Thicker or multi-layer silane coating 24 can have improved high temperature resistance relative to a thinner or mono-layer silane coating.
• the silane coating 24 with multiple layers can include at least three layers, with silane in each layer chemically bonded to silane in an adjacent layer.
• the silane coating can include:
• each R 4 can include any chemical element or group, such as for example a hydrophobic group as described herein or a hydrophilic group, and X can include a bond to the device 10.
• Each R 1 can independently be -OSi(CH3)3, R 2 as defined above, or any other chemical element or group.
• the silane coating 24 with multiple layers can have sufficient minimum thicknesses T L for protection of the device 10. For example, testing has shown substantially increased high-temperature durability with increased thicknesses T 24 of the silane coating 24.
• minimum thicknesses T L of the silane coating 24 with multiple layers include > 0.7 nm, > 1 nm, > 2 nm, > 2.5 nm, > 2.7 nm, > 2.9 nm, and > 4 nm .
• the silane coating 24 can degrade performance of some devices 10, such as for example wire grid polarizers. Thus, it can be important to avoid a thickness T24 of the silane coating 24 beyond what is necessary for protection of the device 10.
• the silane coating 24 with multiple layers can have a maximum thickness T H of ⁇ 6 nm, ⁇ 8 nm, ⁇ 10 nm, ⁇ 12 nm, ⁇ 15 nm, ⁇ 20 nm, ⁇ 30 nm, or ⁇ 50 nm .
• a maximum thickness T H of the silane coating divided by a minimum thickness T L of the silane coating 24 can be ⁇ 2, ⁇ 3, ⁇ 5, ⁇ 10, or ⁇ 20.
• the silane coating 24 described herein can be vapor deposited as described above in the method of vapor depositing a silane chemical. Vapor deposition, instead of immersion deposition, of the silane coating 24 can result in reduced variation between the minimum thickness TL and the maximum thickness TH. Vapor-deposition can also be preferred over immersion because of reduced process-waste disposal problems, reduced health hazards, reduced or no undesirable residue from rinsing, and vapor-deposition can be done with standard semiconductor processing equipment.
• vapor deposition can avoid dissolution of soluble materials of the device while applying the protective chemistry.
• immersion in a liquid such as water
• vapor-deposition methods include chemical vapor-deposition (CVD), low-pressure CVD (LPCVD), plasma-enhanced CVD, physical vapor- deposition (PVD), atomic layer deposition (ALD), thermoreactive diffusion, electron-beam deposition, sputtering, and thermal evaporation.
• silane coatings 24 described herein can be resistant to high temperature. Such high temperature resistance can be beneficial in many applications, such as for example a wire grid polarizer in a small, high light intensity computer projector or an inlet liner for gas chromatography. Such high temperature resistance can be quantified as follows for a hydrophobic silane coating 24: A water contact angle, of a water drop on a surface of the silane coating 24 can be greater than 120° after heating the coated device 20 or 30 at 350° for > 80 hours, > 120 hours, > 500 hours, > 1000 hours, or > 1500 hours.
• covalent bonds can be formed between the silane coating 24 and the device 10 and/or conformal coating of silicon dioxide 34.
• covalent bonds can be formed between silane in each layer and silane in the adjacent layer.

Landscapes

• Chemical & Material Sciences (AREA)
• Physics & Mathematics (AREA)
• General Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Optics & Photonics (AREA)
• General Physics & Mathematics (AREA)
• Inorganic Chemistry (AREA)
• Nonlinear Science (AREA)
• Mathematical Physics (AREA)
• Crystallography & Structural Chemistry (AREA)
• Chemical Vapour Deposition (AREA)
• Polarising Elements (AREA)
• Surface Treatment Of Optical Elements (AREA)

Priority Applications (1)

Applications Claiming Priority (6)

Publications (1)

Family

ID=65040828

Family Applications (1)

Country Status (3)

Families Citing this family (2)

Citations (5)

Family Cites Families (9)

• 2018
  • 2018-07-05 US US16/028,039 patent/US10752989B2/en active Active
  • 2018-07-06 JP JP2019560247A patent/JP7427857B2/ja active Active
  • 2018-07-06 WO PCT/US2018/041117 patent/WO2019022943A1/en not_active Ceased
• 2020
  • 2020-07-20 US US16/933,090 patent/US11822182B2/en active Active

Patent Citations (5)

Also Published As

Similar Documents

Legal Events