JP7423294B2 - 配線基板および電子機器 - Google Patents
配線基板および電子機器 Download PDFInfo
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- JP7423294B2 JP7423294B2 JP2019224921A JP2019224921A JP7423294B2 JP 7423294 B2 JP7423294 B2 JP 7423294B2 JP 2019224921 A JP2019224921 A JP 2019224921A JP 2019224921 A JP2019224921 A JP 2019224921A JP 7423294 B2 JP7423294 B2 JP 7423294B2
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- wiring
- wiring board
- differential signal
- layer
- opening
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- H05K1/00—Printed circuits
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- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
- H05K1/0219—Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
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- H05K1/0224—Patterned shielding planes, ground planes or power planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/0154—Polyimide
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/09236—Parallel layout
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Structure Of Printed Boards (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Description
図1は、第1実施形態に係る電子機器の一例としての撮像装置であるデジタルカメラ600の説明図である。撮像装置であるデジタルカメラ600は、レンズ交換式のデジタルカメラであり、カメラ本体601を備える。カメラ本体601は、レンズを含むレンズユニット(レンズ鏡筒)602が着脱可能となっている。カメラ本体601は、筐体611と、筐体611の内部に収納された、撮像ユニット100と、無線通信ユニット150と、を備える。
なお、本実施形態ではグランド層16は基材の第1面12Aに設けられていたが、グランド層の位置はこれに限定されない。グランド層16は配線層13と対向していればよく、例えば、図4に示すように、配線層13の上に設けられた絶縁層14の上に設けられていても良い。この変形例では、グランド層16の上に形成された被覆部17Bは接着機能を有している。
配線基板11の放射ノイズ量は、図5に示す構成のシステムを用いて評価した。
A(優):20dBμV未満
B(良):20dBμV以上、25dBμV未満
C(不可):25dBμV以上
配線基板の出力波形特性は、図6に示す構成のシステムを用いて評価した。
A(優):開口振幅110mV以上
B(良):開口振幅100mV以上、110mV未満
C(不可):開口振幅100mV未満
図2(b)に示した形状の配線基板11を作製した。
図2(b)に示した形状の配線基板を作製した。
111 第1半導体装置(撮像素子)
121 第2半導体装置(処理回路)
12 基材
12A 第1面
12B 第2面
13 配線層
131 信号配線
132 信号配線
133 信号配線
134 信号配線
13A 第1差動信号配線
13B 第2差動信号配線
150 無線通信ユニット
16 グランド層
16A 非開口部
21 開口部
600 デジタルカメラ(電子機器)
611 筐体
Claims (15)
- 第1面を有する基材と、
前記基材の第1面に設けられ、1対の信号配線からなる第1差動信号配線と、1対の信号配線からなる第2差動信号配線と、を有する配線層と、
前記第1差動信号配線および前記第2差動信号配線と対向し、所定の方向に沿って連続的に配置された複数の開口を有する開口部を有するグランド層と、を備える配線基板であって、
前記配線基板を平面視した際の前記開口の前記信号配線に沿った方向の長さをL1、前記開口の前記L1の長さ方向と直交する方向の長さをL2、前記第1差動信号配線と前記第2差動信号配線間の距離をL3としたときに、
前記L1が前記L2の4倍以上であり、かつ、前記L2が前記L3以下であることを特徴とする配線基板。 - 前記配線基板を平面視した際の前記グランド層における開口部の面積割合が、40%以上90%以下の範囲である請求項1に記載の配線基板。
- 前記L1が、1.5mm以下である請求項1または2に記載の配線基板。
- 前記開口の形状が、菱形、長方形、六角形および楕円のいずれかである請求項1乃至3のいずれか1項に記載の配線基板。
- 前記グランド層の厚さが、1μm以上20μm以下の範囲である請求項1乃至4のいずれか1項に記載の配線基板。
- 前記基材が、樹脂である請求項1乃至5のいずれか1項に記載の配線基板。
- 前記基材が、前記第1面に対向する第2面を有し、
前記グランド層が、前記第2面に設けられている請求項1乃至6のいずれか1項に記載の配線基板。 - 前記配線基板は、前記配線層の上に絶縁層を有し、
前記グランド層が、前記絶縁層の上に設けられている請求項1乃至6のいずれか1項に記載の配線基板。 - 前記第1差動信号配線および前記第2差動信号配線がそれぞれ、第1半導体装置および第2半導体装置の間を接続している請求項1乃至8のいずれか1項に記載の配線基板。
- 前記第1差動信号配線および前記第2差動信号配線に伝送される信号がデジタル信号であり、その伝送速度が5Gbps以上である請求項9に記載の配線基板。
- 前記第1半導体装置が、撮像素子であり、
前記第2半導体装置が、前記撮像素子から伝送される信号を処理する処理回路である請求項9または10に記載の配線基板。 - 第1面を有する基材と、
前記基材の第1面に設けられ、1対の信号配線からなる第1差動信号配線と、1対の信号配線からなる第2差動信号配線と、を有する配線層と、
前記第1差動信号配線および前記第2差動信号配線と対向し、所定の方向に沿って連続的に配置された複数の開口を有する開口部を有するグランド層と、を備える配線基板であって、
前記配線基板を平面視した際の前記開口の前記信号配線に沿った方向の長さをL1、前記開口の前記L1の長さ方向と直交する方向の長さをL2、前記第1差動信号配線と前記第2差動信号配線間の距離をL3としたときに、
前記L1が前記L2より大きく、かつ、前記L2が前記L3以下であり、
前記配線基板に、ビットレート5.3Gbpsの信号を送信したときの、温度25℃、相対湿度23~50%の雰囲気における300kHzから20GHzまでの周波数範囲で測定される放射ノイズが20dbμV未満であることを特徴とする配線基板。 - 前記配線基板に、ビットレート5.3Gbps、振幅150mV/sideの信号を送信したときの、温度25℃、相対湿度23~50%の雰囲気における開口振幅が110mV以上であることを特徴とする請求項12に記載の配線基板。
- 請求項1乃至13のいずれか1項に記載の配線基板と、
前記配線基板が収納される筐体と、を有する電子機器。 - 前記筐体には、外部機器と無線通信が可能な無線通信ユニットがさらに収納され、
前記筐体内において、前記配線基板のグランド層が、前記配線基板の配線層よりも前記無線通信ユニットに近い位置に配置されている請求項14に記載の電子機器。
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CN202011450420.1A CN112996228A (zh) | 2019-12-12 | 2020-12-11 | 布线基板和电子设备 |
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JP2010212438A (ja) | 2009-03-10 | 2010-09-24 | Sumitomo Bakelite Co Ltd | 回路基板 |
JP2012227211A (ja) | 2011-04-15 | 2012-11-15 | Olympus Corp | 差動信号用配線基板 |
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US20210185798A1 (en) | 2021-06-17 |
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