JP7420859B2 - 極紫外線露光用ペリクル - Google Patents
極紫外線露光用ペリクル Download PDFInfo
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- JP7420859B2 JP7420859B2 JP2022064515A JP2022064515A JP7420859B2 JP 7420859 B2 JP7420859 B2 JP 7420859B2 JP 2022064515 A JP2022064515 A JP 2022064515A JP 2022064515 A JP2022064515 A JP 2022064515A JP 7420859 B2 JP7420859 B2 JP 7420859B2
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- 239000010410 layer Substances 0.000 claims description 289
- 239000012792 core layer Substances 0.000 claims description 154
- 239000000463 material Substances 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 34
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 229910052758 niobium Inorganic materials 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- 238000002834 transmittance Methods 0.000 description 104
- 239000000126 substance Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001017 electron-beam sputter deposition Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
ペリクルは、マスクに設置されて、露光工程中に発生する異物がマスクに付着するのを防止し、露光装置によって選択的に使用されている。
図1は、本発明の第1実施形態による極紫外線露光用ペリクルを示す断面図である。また、図2は、図1のA部分の拡大図である。
図3は、本発明の第2実施形態による極紫外線露光用ペリクルを示す拡大図である。
図4は、本発明の第3実施形態による極紫外線露光用ペリクルを示す拡大図である。
このような本発明によるペリクルの350W以上の極紫外線出力環境での透過率と反射率を確認するために、図5~図40による第1~第36実験例によるペリクルに対するシミュレーションを行った。
図5~図13は、第1~第9実験例による極紫外線露光用ペリクルの透過率と反射率を示すグラフである。
図14~図22は、第10~第18実験例による極紫外線露光用ペリクルの透過率と反射率を示すグラフである。
また、「SiN」は、キャッピング層を示す。
図23~図31は、第19~第27実験例による極紫外線露光用ペリクルの透過率と反射率を示すグラフである。
図32~図40は、第28~第36実験例による極紫外線露光用ペリクルの透過率と反射率を示すグラフである。
13 開放部
20、120、220 ペリクル層
21 コア層
23、25 中間層
23 第1中間層
25 第2中間層
27 支持層
29 キャッピング層
100 極紫外線露光用ペリクル
Claims (5)
- 支持層、前記支持層の上に形成されたコア層、および、前記コア層の上に形成されたキャッピング層を含むペリクル層を含み、
前記コア層は、Mおよびαを組み合わせたM-α素材で形成され、
前記Mは、Si、Zr、Mo、Ru、Y、W、Ti、IrおよびNbのうち一つであり、前記αは、B、N、C、OおよびFのうち少なくとも2個であり、
前記支持層は、KOHに対する耐性を有する素材で形成され、
前記キャッピング層は、YOF、YBxNy(x+y≧1)、YOxNy(x+y≧1)、またはSiBxNy(x+y≧2)から選択される素材で形成される、
ことを特徴とする極紫外線露光用ペリクル。 - 前記コア層の素材は、SiBxN1-x(0<x<1)、SiB 6 xN 1 -x(0<x<1)、YB 2 xN 1 -x(0<x<1)のいずれかである請求項1に記載の極紫外線露光用ペリクル。
- 前記ペリクル層は、
前記コア層の一面または両面に形成される中間層を含み、
前記中間層は、YOF、YBxNy(x+y≧1)、YOxNy(x+y≧1)、またはSiBxNy(x+y≧2)から選択される素材で形成される、
ことを特徴とする請求項1に記載の極紫外線露光用ペリクル。 - 中心部に開放部が形成された基板と、
前記開放部を覆うように前記基板の上に形成され、支持層、前記支持層の上に形成されたコア層、および、前記コア層の上に形成されたキャッピング層を含むペリクル層と、を含み、
前記コア層は、Mおよびαを組み合わせたM-α素材で形成され、
前記Mは、Si、Zr、Mo、Ru、Y、W、Ti、IrおよびNbのうち一つであり、前記αは、B、N、C、OおよびFのうち少なくとも2個であり、
前記支持層は、KOHに対する耐性を有する素材で形成され、
前記キャッピング層は、YOF、YBxNy(x+y≧1)、YOxNy(x+y≧1)、またはSiBxNy(x+y≧2)から選択される素材で形成される、
ことを特徴とする極紫外線露光用ペリクル。 - 前記ペリクル層は、
前記コア層の一面または両面に形成される中間層を含み、
前記中間層は、YOF、YBxNy(x+y≧1)、YOxNy(x+y≧1)、またはSiBxNy(x+y≧2)から選択される素材で形成される、
ことを特徴とする請求項4に記載の極紫外線露光用ペリクル。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2021-0048288 | 2021-04-14 | ||
KR1020210048288A KR20220142571A (ko) | 2021-04-14 | 2021-04-14 | 극자외선 노광용 펠리클 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022163710A JP2022163710A (ja) | 2022-10-26 |
JP7420859B2 true JP7420859B2 (ja) | 2024-01-23 |
Family
ID=81074122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022064515A Active JP7420859B2 (ja) | 2021-04-14 | 2022-04-08 | 極紫外線露光用ペリクル |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220334464A1 (ja) |
EP (1) | EP4075195A1 (ja) |
JP (1) | JP7420859B2 (ja) |
KR (1) | KR20220142571A (ja) |
TW (1) | TW202305500A (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016175019A1 (ja) | 2015-04-27 | 2016-11-03 | 三井化学株式会社 | ペリクルの製造方法およびペリクル付フォトマスクの製造方法 |
US20170227843A1 (en) | 2016-02-09 | 2017-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle for advanced lithography |
WO2017179199A1 (ja) | 2016-04-15 | 2017-10-19 | 凸版印刷株式会社 | ペリクル |
JP2018151622A (ja) | 2017-03-10 | 2018-09-27 | エスアンドエス テック カンパニー リミテッド | 極紫外線リソグラフィ用ペリクル及びその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5394808B2 (ja) * | 2009-04-22 | 2014-01-22 | 信越化学工業株式会社 | リソグラフィ用ペリクルおよびその製造方法 |
US20130250260A1 (en) * | 2012-03-23 | 2013-09-26 | Globalfoundries Inc. | Pellicles for use during euv photolithography processes |
JP6364404B2 (ja) * | 2013-05-24 | 2018-07-25 | 三井化学株式会社 | ペリクル、及びこれらを含むeuv露光装置 |
KR101910302B1 (ko) * | 2014-09-19 | 2018-10-19 | 미쯔이가가꾸가부시끼가이샤 | 펠리클, 펠리클의 제조 방법 및 펠리클을 사용한 노광 방법 |
CN115202162A (zh) * | 2015-12-14 | 2022-10-18 | Asml荷兰有限公司 | 用于制造隔膜组件的方法 |
US9759997B2 (en) * | 2015-12-17 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle assembly and method for advanced lithography |
US10908496B2 (en) * | 2016-04-25 | 2021-02-02 | Asml Netherlands B.V. | Membrane for EUV lithography |
DE102017202861A1 (de) * | 2017-02-22 | 2017-04-13 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage mit multifunktionalem Pellikel und Verfahren zur Herstellung der Projektionsbelichtungsanlage |
KR20190013460A (ko) * | 2017-07-31 | 2019-02-11 | 삼성전자주식회사 | 포토마스크용 펠리클과 이를 포함하는 레티클 및 포토마스크용 펠리클의 제조방법 |
KR20200126216A (ko) * | 2019-04-29 | 2020-11-06 | 주식회사 에스앤에스텍 | 극자외선 리소그래피용 펠리클 및 이의 제조방법 |
EP3798728A1 (en) * | 2019-09-26 | 2021-03-31 | S&S Tech Co., Ltd. | Pellicle for euv lithography and method for manufacturing the same |
-
2021
- 2021-04-14 KR KR1020210048288A patent/KR20220142571A/ko not_active Application Discontinuation
-
2022
- 2022-03-18 US US17/698,455 patent/US20220334464A1/en active Pending
- 2022-03-30 EP EP22165584.8A patent/EP4075195A1/en active Pending
- 2022-04-07 TW TW111113321A patent/TW202305500A/zh unknown
- 2022-04-08 JP JP2022064515A patent/JP7420859B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016175019A1 (ja) | 2015-04-27 | 2016-11-03 | 三井化学株式会社 | ペリクルの製造方法およびペリクル付フォトマスクの製造方法 |
US20170227843A1 (en) | 2016-02-09 | 2017-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle for advanced lithography |
WO2017179199A1 (ja) | 2016-04-15 | 2017-10-19 | 凸版印刷株式会社 | ペリクル |
JP2018151622A (ja) | 2017-03-10 | 2018-09-27 | エスアンドエス テック カンパニー リミテッド | 極紫外線リソグラフィ用ペリクル及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2022163710A (ja) | 2022-10-26 |
KR20220142571A (ko) | 2022-10-24 |
US20220334464A1 (en) | 2022-10-20 |
EP4075195A1 (en) | 2022-10-19 |
TW202305500A (zh) | 2023-02-01 |
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