JP7413485B2 - semiconductor equipment - Google Patents

Description

The present invention relates to a semiconductor device.

For example, a semiconductor device in which a semiconductor element such as a transistor is sealed in a resin package has been proposed. Patent Document 1 discloses a semiconductor device including a semiconductor element having three electrodes, three leads electrically connected to these electrodes, and a resin package that partially covers each of the semiconductor element and the three leads. The three electrodes are formed on the same surface of the semiconductor element. The semiconductor element is bonded to one of the three leads. The three electrodes are individually electrically connected to the three leads via three wires. The resin package covers the entire semiconductor element, all three wires, and a portion of each of the three leads. The portions of the three leads that protrude from the resin package serve as terminal portions for mounting the semiconductor device.

In a conventional semiconductor device, the lead on which the semiconductor element is arranged is larger than the semiconductor element in plan view. This large lead determines the size of the resin package. Therefore, large leads are an impediment to miniaturization of semiconductor devices.

The above three wires generally have a loop shape. Therefore, in order to properly cover the three wires, the resin package needs to have a suitable height. This increases the height of the semiconductor device. Moreover, at the same time, in order to properly bond the three wires mentioned above, it is necessary to ensure a certain distance between the so-called first bonding part and the second bonding part. Further, the terminal portions of the three leads protrude from the resin package. These increase the planar dimensions of the semiconductor device. As described above, the above semiconductor device has a problem in that it is difficult to achieve miniaturization.

Japanese Patent Application Publication No. 2012-190936

The present invention was conceived under the above circumstances, and its main objective is to provide a semiconductor device that can be miniaturized.

According to a first aspect of the present invention, the present invention includes a semiconductor element, a main lead on which the semiconductor element is arranged, and a resin package that covers the semiconductor element and the main lead, and the main lead is formed from the resin package. A semiconductor device is provided, in which the semiconductor element has an exposed portion that does not overlap the main lead when viewed in the thickness direction of the semiconductor element.

Preferably, the main lead has a main lead main surface and a main lead back surface facing opposite to each other, the semiconductor element is disposed on the main lead main surface, and the main lead back surface is covered with the resin. exposed from the package.

Preferably, the main lead includes a main full thickness part and a main eave part, the main full thickness part is a part extending from the main surface of the main lead to the back surface of the main lead, and the main eave part is a part of the semiconductor It projects from the main full thickness section in a direction perpendicular to the thickness direction of the element.

Preferably, the entire semiconductor element overlaps the main full thickness section when viewed in the thickness direction of the semiconductor element.

Preferably, the device further includes a first sub-lead electrically connected to the semiconductor element, and the first sub-lead is spaced apart from the main lead and exposed from the resin package.

Preferably, the main eave part has a main front part, and the main front part projects from the main full thickness part toward the first sub-lead.

Preferably, the main eave part has a main lateral part, and the main lateral part projects from the main full thickness part in a direction that is perpendicular to the direction in which the main front part projects. .

Preferably, the main lead includes a main lateral connecting part protruding from the main lateral part, and the main lateral connecting part has an end surface exposed from the resin package.

Preferably, the main eave part has a main rear part, and the main rear part projects from the main full thickness part in a direction opposite to the direction in which the main front part projects.

Preferably, the main lead includes a main rear connecting part protruding from the main rear part, and the main rear connecting part has an end surface exposed from the resin package.

Preferably, the main full-thickness section is entirely surrounded by the main eaves section when viewed in the thickness direction of the semiconductor element.

Preferably, the main eaves portion entirely overlaps the semiconductor element when viewed in the thickness direction of the semiconductor element.

Preferably, the semiconductor device further includes a main surface plating layer formed on the main lead and interposed between the semiconductor element and the main lead.

Preferably, the main surface plating layer overlaps the entire main eaves part.

Preferably, the semiconductor element further includes a first sub-lead electrically connected to the semiconductor element, and the first sub-lead is spaced apart from the main lead and located outside the resin package when viewed in the thickness direction of the semiconductor element. is exposed from the resin package.

Preferably, the first sub-lead includes a first sub-full thickness part and a first sub-eaves part, and the first sub-lead has a first sub-lead main surface and a first sub-lead back surface facing opposite to each other. The back surface of the first sub-lead is exposed from the resin package, the first sub-full thickness portion is a portion extending from the main surface of the first sub-lead to the back surface of the first sub-lead, and The first sub-eaves portion protrudes from the first sub-full thickness portion in a direction perpendicular to the thickness direction of the semiconductor element, and constitutes the first sub-lead main surface.

Preferably, the first sub-eaves part has a first sub-front part, and the first sub-front part protrudes from the first sub-full thickness part toward the main lead.

Preferably, the first sub-full thickness section is exposed from the resin package toward the outside of the resin package when viewed in the thickness direction of the semiconductor element.

Preferably, the first sub-lead includes a first sub-extending portion and extends from the first sub-full thickness portion in a direction perpendicular to the thickness direction of the semiconductor element, and The first sub-lead back surface is constituted by the first sub-lead, and the first sub-extending portion is exposed from the resin package toward the outside of the resin package when viewed in the thickness direction of the semiconductor element.

Preferably, the first sub-lead has a first sub-lead main surface and a first sub-lead back surface facing opposite to each other, and the first sub-lead back surface is exposed from the resin package.

Preferably, the resin package has a resin back surface facing in the same direction as the back surface of the first sub-lead, and the resin back surface is flush with the back surface of the first sub-lead.

Preferably, the first sub-lead has a first sub-lead end surface connected to a back surface of the first sub-lead, and the first sub-lead end surface faces a side opposite to the side where the main lead is located. .

Preferably, the first sub-lead end face is exposed from the resin package.

Preferably, the resin package has a first resin end face facing in the same direction as the first sub-lead end face, and the first resin end face is flush with the first sub-lead end face. .

Preferably, the first sub-lead has a first sub-lead side surface that is connected to the back surface of the first sub-lead, and the first sub-lead side surface is in the same direction as the direction in which the first sub-lead end surface faces and the thickness of the semiconductor element. It faces in a direction that is perpendicular to both directions.

Preferably, the first sub-lead side surface is exposed from the resin package.

Preferably, the resin package has a first resin side face facing in the same direction as the first sub-lead side face, and the first sub-lead side face is flush with the first resin side face. .

Preferably, the device further includes a first wire that is directly connected to the semiconductor element and connects the semiconductor element and the first sub-lead.

Preferably, the device further includes a first sub-plating layer interposed between the first sub-lead and the first wire.

Preferably, a second sub-lead electrically connected to the semiconductor element is further provided, and the second sub-lead is spaced apart from the main lead and the first sub-lead, and when viewed in the thickness direction of the semiconductor element. The resin package is exposed to the outside of the resin package.

Preferably, the device further includes a second wire that is directly connected to the semiconductor element and connects the semiconductor element and the second sub-lead.

Preferably, the device further includes a second sub-plating layer interposed between the second sub-lead and the second wire.

Preferably, the semiconductor element has a semiconductor layer stacked on each other, a eutectic layer of a semiconductor and a metal, and a single metal layer constituting the back electrode, and the single metal layer is directly bonded to the main lead. has been done.

Preferably, the eutectic layer is made of a eutectic of Si and Au.

Preferably, the metal single layer is thinner than the eutectic layer.

Preferably, the semiconductor element further includes a first wire, and the semiconductor element includes a first surface electrode to which the first wire is bonded, and the first surface electrode is connected to the main surface when viewed in the thickness direction of the semiconductor element. It overlaps the thick part.

Preferably, the semiconductor element further includes a second wire, and the semiconductor element includes a second surface electrode to which the second wire is bonded, and the second surface electrode covers the main entire surface when viewed in the thickness direction of the semiconductor element. It overlaps the thick part.

Preferably, the semiconductor element further includes a first wire and a second wire, and the semiconductor element includes a first surface electrode to which the first wire is bonded, a second surface electrode to which the second wire is bonded; At least one of the first surface electrode and the second surface electrode overlaps the main full thickness portion when viewed in the thickness direction of the semiconductor element.

According to a second aspect of the present invention, it has a front surface and a back surface facing in opposite directions in the thickness direction, a first surface electrode and a second surface electrode formed on the surface, and a back surface electrode formed on the back surface. A main lead having a semiconductor element, a die pad portion to which the back electrode is conductively connected, and a main back terminal portion facing opposite to the die pad portion, and a main lead connected to the first front electrode via a first wire. a first sub-lead having a first wire bonding portion and a first sub-back terminal portion facing opposite to the first wire bonding portion; and a second wire bonding connected to the second surface electrode via a second wire. and a second sub-lead having a second sub-back terminal portion facing opposite to the second wire bonding portion; a portion of the semiconductor element, the main lead, the first sub-lead, and the second sub-lead; and a resin package that covers the die pad part and exposes the main back terminal part, the first sub back terminal part, and the second sub back terminal part on the same side, and the main lead is connected to the die pad part. The main full thickness part extends from the main back terminal part to the main rear surface terminal part, and the main eaves part protrudes from the die pad part side part of the main full thickness part in a direction perpendicular to the thickness direction, and The die pad portion and the semiconductor element overlap both the main full thickness portion and the main eaves portion when viewed in the thickness direction, and at least one of the first surface electrode and the second surface electrode overlaps the main eaves portion. The first wire has a first bonding part bonded to the first wire bonding part and a second bonding part bonded to the first surface electrode via a first bump, The second wire is characterized in that it has a first bonding part bonded to the second wire bonding part, and a second bonding part bonded to the second surface electrode via a second bump. , a semiconductor device is provided.

Preferably, the first surface electrode is a gate electrode, the second surface electrode is a source electrode, and the back electrode is a drain electrode, and the semiconductor element is configured as a transistor, and the first surface electrode is preferably a gate electrode. The electrode is spaced apart from the first sub-lead and the second sub-lead from the second surface electrode.

Preferably, the first surface electrode overlaps the main full thickness section when viewed in the thickness direction, and the second surface electrode overlaps the main eaves section when viewed in the thickness direction.

Preferably, the first surface electrode overlaps both the main full thickness section and the main eaves section when viewed in the thickness direction.

Preferably, the first bump of the first wire and the second bonding part of the first wire overlap both the main full thickness part and the main eaves part when viewed in the thickness direction.

Preferably, the main eaves portion has a main front portion that projects from the main full thickness portion toward the first sub-lead and the second sub-lead.

Preferably, the main eave part has a main side part that projects in a direction perpendicular to a direction in which the main front part projects.

Preferably, the main lead has a main lateral connecting part that protrudes from the main lateral part and has one end surface exposed from the resin package.

Preferably, the main eave part has a main rear part that projects on the opposite side from the main front part.

Preferably, the main lead has a main rear connecting part that protrudes from the main rear part and has one end surface exposed from the resin package.

Preferably, all of the main full thickness section is surrounded by the main eave section.

Preferably, a main surface plating layer is formed on the die pad portion.

Preferably, the main surface plating layer overlaps all of the main eaves.

Preferably, the first sub-lead includes a first sub-full thickness part extending from the first wire bonding part to the first sub-back terminal part, and a part of the first sub-full thickness part from the first wire bonding part side. and a first sub-eaves portion projecting in a direction perpendicular to the thickness direction.

Preferably, the first sub-eaves portion has a first sub-front portion that projects from the first sub-full thickness portion toward the main lead.

Preferably, the first sub-eaves part has a first sub-lateral part that projects in a direction perpendicular to the direction in which the first sub-front part projects.

Preferably, the first sub-lead has a first sub-lateral connecting part that protrudes from the first sub-lateral part and has one end surface exposed from the resin package.

Preferably, the first sub-eaves part has a first sub-rear part that protrudes on a side opposite to the first sub-front part.

Preferably, the first sub-lead has a first sub-rear connecting part that protrudes from the first sub-rear part and has one end surface exposed from the resin package.

Preferably, the entire first sub-full thickness section is surrounded by the first sub-eaves section.

Preferably, a first sub-surface plating layer is formed on the first wire bonding portion.

Preferably, the first sub-surface plating layer overlaps all of the first sub-eaves portions.

Preferably, the second sub-lead includes a second sub-full thickness part extending from the second wire bonding part to the second sub-back terminal part, and a part of the second sub-full thickness part from the second wire bonding part side. and a second sub-eaves portion projecting in a direction perpendicular to the thickness direction.

Preferably, the second sub-eaves portion has a second sub-front portion that projects from the second sub-full thickness portion toward the main lead.

Preferably, the second sub-eaves part has a second sub-lateral part that projects in a direction perpendicular to the direction in which the second sub-front part projects.

Preferably, the second sub-lead has a second sub-lateral connecting part that protrudes from the second sub-lateral part and has one end surface exposed from the resin package.

Preferably, the second sub-eaves part has a second sub-rear part that protrudes on a side opposite to the second sub-front part.

Preferably, the second sub-lead has a second sub-rear connecting part that protrudes from the second sub-rear part and has one end surface exposed from the resin package.

Preferably, the entire second sub-full thickness section is surrounded by the second sub-eaves section.

Preferably, a second sub-surface plating layer is formed on the second wire bonding portion.

Preferably, the second sub-surface plating layer overlaps all of the second sub-eaves portions.

Preferably, the semiconductor element has a semiconductor layer stacked on each other, a eutectic layer of a semiconductor and a metal, and a single metal layer constituting the back electrode, and the single metal layer is directly bonded to the die pad portion. has been done.

Preferably, the eutectic layer is made of a eutectic of Si and Au.

Preferably, the metal single layer is thinner than the eutectic layer.

Other features and advantages of the invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

1 is a perspective view of a semiconductor device according to a first embodiment of the present invention. 2 is a plan view of the semiconductor device shown in FIG. 1. FIG. 2 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 3 is a sectional view taken along line IV-IV in FIG. 2. FIG. 3 is a sectional view taken along line VV in FIG. 2. FIG. 2 is a partially enlarged sectional view of the semiconductor device shown in FIG. 1. FIG. 3 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 3 is a cross-sectional view taken along line VIII-VIII in FIG. 2. FIG. 3 is a sectional view taken along line IX-IX in FIG. 2. FIG. 2 is an enlarged image showing a second bonding portion of the semiconductor device shown in FIG. 1. FIG. 2 is a cross-sectional view showing one step in the method for manufacturing the semiconductor device shown in FIG. 1. FIG. FIG. 3 is a perspective view of a semiconductor device according to a second embodiment of the present invention. 13 is a plan view of the semiconductor device shown in FIG. 12. FIG. 2 is an enlarged plan view of a main part showing a semiconductor element of the semiconductor device of FIG. 1. FIG. FIG. 6 is a plan view of a modified example of the semiconductor device of the present invention. FIG. 7 is a perspective view showing an example of a semiconductor device according to a third embodiment of the present invention. 17 is a perspective view showing the semiconductor device of FIG. 16. FIG. 17 is a plan view showing the semiconductor device of FIG. 16. FIG. 19 is a sectional view taken along line XIX-XIX in FIG. 18. FIG. 19 is a sectional view taken along line XX-XX in FIG. 18. FIG. 17 is an enlarged cross-sectional view of a main part of the semiconductor device of FIG. 16. FIG. 19 is a sectional view taken along line XXII-XXII in FIG. 18. FIG. 19 is a sectional view taken along line XXIII-XXIII in FIG. 18. FIG. 19 is a sectional view taken along line XXIV-XXIV in FIG. 18. FIG. 17 is an enlarged plan view of a main part showing a semiconductor element of the semiconductor device of FIG. 16. FIG. 17 is a cross-sectional view showing an example of the manufacturing process of the semiconductor device shown in FIG. 16. FIG. 17 is a cross-sectional view showing an example of the manufacturing process of the semiconductor device shown in FIG. 16. FIG. 17 is a cross-sectional view showing an example of the manufacturing process of the semiconductor device shown in FIG. 16. FIG. 17 is a cross-sectional view showing an example of the manufacturing process of the semiconductor device shown in FIG. 16. FIG. 17 is a cross-sectional view showing an example of the manufacturing process of the semiconductor device shown in FIG. 16. FIG. 17 is a cross-sectional view showing an example of the manufacturing process of the semiconductor device shown in FIG. 16. FIG. 17 is an enlarged image showing a second bonding portion formed in an example of the manufacturing process of the semiconductor device shown in FIG. 16. FIG. FIG. 17 is a plan view of a main part showing a cutting step in an example of the manufacturing process of the semiconductor device shown in FIG. 16; 17 is an X-ray image showing the semiconductor device of FIG. 16. FIG. 7 is a plan view showing an example of a semiconductor device according to a fourth embodiment of the present invention.

Embodiments of the present invention will be specifically described below with reference to the drawings.

A first embodiment of the present invention will be described using FIGS. 1 to 11.

FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present invention. FIG. 2 is a plan view of the semiconductor device shown in FIG. 1. FIG. 3 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 2. FIG. 5 is a sectional view taken along line VV in FIG. 2. FIG. 6 is a partially enlarged sectional view of the semiconductor device shown in FIG. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG.

The semiconductor device 101 of this embodiment includes a semiconductor element 200, a main lead 300, a first sub-lead 400, a second sub-lead 500, a first wire 600, a second wire 700, and a resin package 800. In FIGS. 1 and 2, the resin package 800 is indicated by a two-dot chain line. The semiconductor device 101 is configured as a relatively small semiconductor device that can be surface-mounted. To give an example of the size of the semiconductor device 101, the dimension in the x direction is approximately 0.4 to 0.8 mm, the dimension in the y direction is approximately 0.2 to 0.6 mm, and the dimension in the thickness direction z is approximately 0.3 to 0.8 mm. It is about 4 mm.

In this embodiment, the semiconductor element 200 is configured as a so-called transistor. The semiconductor element 200 has a front surface 201 and a back surface 202, and a first surface electrode 211, a second surface electrode 212, and a back surface electrode 220 are formed. The front surface 201 and the back surface 202 face oppositely to each other in the z direction. To give an example of the size of the semiconductor element 200, the dimension in the x direction is about 300 μm, and the dimension in the y direction is about 300 μm.

As shown in FIG. 14, the first surface electrode 211 and the second surface electrode 212 are formed on the surface 201, and are each formed by a portion of an electrode layer 213 made of, for example, an Au plating layer. In this embodiment, the first surface electrode 211 is the gate electrode, and the second surface electrode 212 is the source electrode. In this embodiment, in FIG. 14, the first surface electrode 211 is located on the left side in the x direction, and the second surface electrode 212 is located on the right side in the x direction. Further, the first surface electrode 211 is located on the lower side in the y-direction diagram, and the second surface electrode 212 is located on the upper side in the y-direction diagram. A back electrode 220 is formed on the back surface 202. In this embodiment, the back electrode 220 is a drain electrode.

A removed region 214 is formed by removing a portion of the electrode layer 231. The removal region 214 has a shape surrounding the first surface electrode 211. More specifically, the removal region 214 includes a portion extending parallel to each other along the four sides of the semiconductor element 200 and a portion positioned across a relatively large area to surround the first surface electrode 211. There is. The first surface electrode 211 and the second surface electrode 212 are insulated by the annular removed region 214.

The peripheral area of the second surface electrode 212 is an active area 216. A MOSFET 217 is built into the active region 216 at a portion located inward from the surface 201 in the z direction. MOSFET 217 is composed of a plurality of unit cells 218 arranged in a matrix. Note that the arrangement form of the plurality of unit cells 218 is not limited to a matrix form, and may be, for example, a stripe form or a staggered form.

Note that in this embodiment, one second surface electrode 212 is provided as a source electrode, but the present invention is not limited to this, and a plurality of second surface electrodes 212 may be provided.

A semiconductor element 200 is arranged on the main lead 300 . As shown in FIGS. 2 and 3, in this embodiment, the semiconductor element 200 has a portion that does not overlap the main lead 300 when viewed in the thickness direction z. That is, the semiconductor element 200 has a portion that protrudes outside the main lead 300 when viewed in the thickness direction z. As will be described in detail later, the main lead 300 is exposed from the resin package 800. The main lead 300 originates from the lead frame. The main lead 300 is formed by patterning, such as etching, a metal plate made of, for example, Cu.

As shown in FIGS. 4, 5, etc., the main lead 300 has a main lead main surface 310 and a main lead back surface 320 facing oppositely to each other. Both the main lead main surface 310 and the main lead back surface 320 are flat.

The main lead surface 310 faces upward in the thickness direction z. The semiconductor element 200 is arranged on the main lead main surface 310. Further, in this embodiment, a main surface plating layer 311 is formed on the main lead main surface 310 of the main lead 300. Main surface plating layer 311 is interposed between semiconductor element 200 and main lead 300. The main surface plating layer 311 is formed over the entire main lead surface 310 . The main surface plating layer 311 is made of Ag and has a thickness of about 2 μm, for example.

In FIG. 3, the back surface 320 of the main lead is shown by hatching. The main lead back surface 320 faces downward in the thickness direction z, opposite to the main lead main surface 310, and is used for surface mounting the semiconductor device 101. The main lead back surface 320 has a rectangular shape. The main lead back surface 320 completely overlaps the main lead main surface 310 when viewed in the thickness direction z, and is included in the main lead main surface 310 .

Main lead 300 includes a main full-thickness section 330 and a main canopy section 340 .

The main full thickness portion 330 is a portion extending from the main lead main surface 310 to the main lead back surface 320 in the thickness direction z. In the present embodiment, the main full thickness portion 330 entirely overlaps the semiconductor element 200 when viewed in the thickness direction z. At least one of the first surface electrode 211 and the second surface electrode 212 overlaps with the main full thickness portion 330 in the thickness direction z. In the present embodiment, both the first surface electrode 211 and the second surface electrode 212 overlap in the main full thickness portion 330 in the thickness direction z. That is, in the thickness direction z, the first surface electrode 211 and the second surface electrode 212 are arranged near the center of the semiconductor element 200. Unlike this embodiment, only the first surface electrode 211 overlaps with the main full thickness portion 330 in the thickness direction z, and the second surface electrode 212 overlaps with the main full thickness portion 330 in the thickness direction z. You don't have to. Similarly, unlike this embodiment, only the second surface electrode 212 overlaps the main full thickness section 330 in the thickness direction z, and the first surface electrode 211 overlaps the main full thickness section 330 in the thickness direction z. They do not need to overlap. In this embodiment, the thickness of the main full thickness portion 330 is approximately 0.9 to 1.1 mm. The main full thickness portion 330 constitutes the back surface 320 of the main lead.

The main eaves portion 340 projects from the main full thickness portion 330 in a direction perpendicular to the thickness direction z. In this embodiment, the main eaves section 340 protrudes from the main full thickness section 330 in the x and y directions that are perpendicular to the thickness direction z. In the present embodiment, the main eaves portion 340 further protrudes from the main lead main surface 310 side portion of the main full thickness portion 330 in the x direction and the y direction that are perpendicular to the thickness direction z. The thickness of the main eaves portion 340 is, for example, half of the main full thickness portion 330, and is approximately 0.05 mm. The main eaves portion 340 and the main full thickness portion 330 constitute the above-mentioned main lead main surface 310. On the other hand, the main eaves portion 340 does not constitute the main lead back surface 320. The main eaves section 340 surrounds the main full thickness section 330 when viewed in the thickness direction z. Furthermore, in this embodiment, the main eaves portion 340 entirely overlaps the semiconductor element 200 when viewed in the thickness direction z.

In this embodiment, the main eaves section 340 has a main front section 341, a main side section 342, and a main rear section 343.

The main front portion 341 projects from the main full thickness portion 330 toward the first sub-lead 400 . Furthermore, in this embodiment, the main front portion 341 protrudes from the main full-thickness portion 330 toward the second sub-lead 500.

The main lateral parts 342 project from the main full thickness part 330 in a direction that is perpendicular to the direction in which the main front part 341 projects. Specifically, the main side portion 342 protrudes from the main full thickness portion 330 in the y direction. In this embodiment, two main side portions 342 are formed. Further, in this embodiment, the main lead 300 has two main lateral connecting parts 351. The main side connecting portion 351 extends from the main side portion 342 of the main eave portion 340 and has the same thickness as the main side portion 342. The end surface of the main side connecting portion 351 in the y direction is exposed from the resin package 800.

The main rear portion 343 protrudes from the main full thickness portion 330 in a direction opposite to the direction in which the main front portion 341 protrudes. In this embodiment, the main lead 300 has a main rear connecting portion 352 . The main rear connecting portion 352 extends from the main rear portion 343 of the main eave portion 340 and has the same thickness as the main rear portion 343. The end surface of the main rear connecting portion 352 in the x direction is exposed from the resin package 800.

As shown in FIG. 6, in the semiconductor element 200, the back electrode 220 is bonded to the main lead main surface 310 (main surface plating layer 311). Specifically, the back electrode 220 as a single metal layer is directly bonded to the main lead main surface 310 (main surface plating layer 311) by, for example, thermocompression bonding. In this thermocompression bonding, no vibration is applied, only heat and pressure are applied.

The first sub-lead 400 is spaced apart from the main lead 300. Specifically, the first sub-lead 400 is spaced apart from the main lead 300 in the x direction. Further, the first sub-lead 400 is spaced apart from the second sub-lead 500. The first sub-lead 400 is exposed from the resin package 800 to the outside of the resin package 800 when viewed in the thickness direction z. In this embodiment, the first sub-lead 400 is exposed from the resin package 800 in the x and y directions. The first secondary lead 400 originates from the lead frame. The first sub-lead 400 is formed, for example, by subjecting a metal plate made of Cu to patterning such as etching.

The first sub-lead 400 has a first sub-lead main surface 410, a first sub-lead back surface 420, a first sub-lead end surface 481, and a first sub-lead side surface 482. The first sub-lead main surface 410, the first sub-lead back surface 420, the first sub-lead end surface 481, and the first sub-lead side surface 482 are all flat.

The first secondary lead main surface 410 faces upward in the thickness direction z. A first wire 600 is bonded to the first sub-lead main surface 410. In this embodiment, a first sub-surface plating layer 411 is formed on the main surface 410 of the first sub-lead. The first sub-surface plating layer 411 is interposed between the first sub-lead main surface 410 and the first wire 600. The first sub-surface plating layer 411 is formed over the entire first sub-lead main surface 410. The first subsurface plating layer 411 is made of Ag and has a thickness of about 2 μm, for example. In addition, in FIG. 1, for convenience of understanding, the first sub-surface plating layer 411 is halftone.

The first sub-lead back surface 420 faces the opposite side to the direction in which the first sub-lead main surface 410 faces. Specifically, the first sub-lead back surface 420 faces downward in the thickness direction z, opposite to the first sub-lead main surface 410. The first sub-lead back surface 420 is exposed from the resin package 800. The first sub-lead back surface 420 is used for surface mounting the semiconductor device 101. In FIG. 3, the back surface 420 of the first sub-lead is shown by hatching.

The first sub-lead end face 481 faces the opposite side to the side where the main lead 300 is located. Specifically, the first sub-lead end face 481 faces the right side in FIG. The first sub-lead end surface 481 is connected to the first sub-lead back surface 420. The first sub-lead end surface 481 is exposed from the resin package 800.

The first sub-lead side surface 482 faces in a direction that is perpendicular to both the direction in which the first sub-lead end face 481 faces and the thickness direction z of the semiconductor element 200. Specifically, the first sub-lead side surface 482 faces downward in FIG. The first sub-lead side surface 482 is connected to the first sub-lead back surface 420. The first sub-lead side surface 482 is exposed from the resin package 800.

The first sub-lead 400 includes a first sub-full thickness section 430 and a first sub-eaves section 440 .

The first sub-full thickness portion 430 is a portion extending from the first sub-lead main surface 410 to the first sub-lead back surface 420 in the thickness direction z. In this embodiment, the thickness of the first sub-full thickness portion 430 is approximately 0.1 mm. The first sub-full thickness portion 430 constitutes a first sub-lead main surface 410 and a first sub-lead back surface 420. In this embodiment, the first sub-full thickness portion 430 is exposed from the resin package 800. Therefore, the first sub-full thickness portion 430 constitutes a first sub-lead end surface 481 and a first sub-lead side surface 482.

The first sub-eaves portion 440 protrudes from the first sub-full thickness portion 430 in a direction perpendicular to the thickness direction z. In this embodiment, the first sub-eaves portion 440 protrudes in the x direction and the y direction. The thickness of the first sub-eaves portion 440 is, for example, half of the first sub-full thickness portion 430, and is approximately 0.05 mm. The first sub-eaves portion 440 constitutes the first sub-lead main surface 410. On the other hand, the first sub-eaves portion 440 does not constitute the first sub-lead back surface 420.

In this embodiment, the first sub-eaves part 440 has a first sub-front part 441 and a first sub-inner part 442.

The first sub-front part 441 projects from the first sub-full thickness part 430 toward the main lead 300. The first sub-inner part 442 projects from the first sub-full thickness section 430 toward the second sub-lead 500.

The second sub-lead 500 is spaced apart from the main lead 300. Specifically, the second sub-lead 500 is spaced apart from the main lead 300 in the x direction. Further, the second sub-lead 500 is spaced apart from the first sub-lead 400. The second sub-lead 500 is exposed from the resin package 800 to the outside of the resin package 800 when viewed in the thickness direction z. In this embodiment, the second sub-lead 500 is exposed from the resin package 800 in the x and y directions. The second sub-lead 500 originates from the lead frame. The second sub-lead 500 is formed, for example, by subjecting a metal plate made of Cu to patterning such as etching.

The second sub-lead 500 has a second sub-lead main surface 510, a second sub-lead back surface 520, a second sub-lead end surface 581, and a second sub-lead side surface 582. The second sub-lead main surface 510, the second sub-lead back surface 520, the second sub-lead end surface 581, and the second sub-lead side surface 582 are all flat.

The second sub-lead main surface 510 faces upward in the thickness direction z. A second wire 700 is bonded to the second sub-lead main surface 510. In this embodiment, a second sub-surface plating layer 511 is formed on the second sub-lead main surface 510. The second sub-surface plating layer 511 is interposed between the second sub-lead main surface 510 and the second wire 700. The second sub-surface plating layer 511 is formed over the entire second sub-lead main surface 510. The second sub-surface plating layer 511 is made of Ag and has a thickness of about 2 μm, for example. In addition, in FIG. 1, for convenience of understanding, the second sub-surface plating layer 511 is halftone.

The second sub-lead back surface 520 faces the opposite side to the direction in which the second sub-lead main surface 510 faces. Specifically, the second sub-lead back surface 520 faces downward in the thickness direction z, opposite to the second sub-lead main surface 510. The second sub-lead back surface 520 is exposed from the resin package 800. The second sub-lead back surface 520 is used for surface mounting the semiconductor device 101. In FIG. 3, the back surface 520 of the second sub-lead is shown by hatching.

The second sub-lead end face 581 faces the opposite side to the side where the main lead 300 is located. Specifically, the second sub-lead end face 581 faces the right side in FIG. The second sub-lead end surface 581 is connected to the second sub-lead back surface 520. The second sub-lead end face 581 is exposed from the resin package 800.

The second sub-lead side surface 582 faces in a direction that is perpendicular to both the direction in which the second sub-lead end face 581 faces and the thickness direction z of the semiconductor element 200. Specifically, the second sub-lead side surface 582 faces upward in FIG. 3 . The second sub-lead side surface 582 is connected to the second sub-lead back surface 520. The second sub-lead side surface 582 is exposed from the resin package 800.

The second sub-lead 500 includes a second sub-full thickness section 530 and a second sub-eaves section 540.

The second sub-full thickness portion 530 is a portion extending from the second sub-lead main surface 510 to the second sub-lead back surface 520 in the thickness direction z. In this embodiment, the thickness of the second sub-full thickness portion 530 is approximately 0.1 mm. The second sub-full thickness portion 530 constitutes a second sub-lead main surface 510 and a second sub-lead back surface 520. In this embodiment, the second sub-full thickness portion 530 is exposed from the resin package 800. Therefore, the second sub-full thickness portion 530 constitutes a second sub-lead end surface 581 and a second sub-lead side surface 582.

The second sub-eaves portion 540 protrudes from the second sub-full thickness portion 530 in a direction perpendicular to the thickness direction z. In this embodiment, the second sub-eaves portion 540 protrudes in the x direction and the y direction. The thickness of the second sub-eaves portion 540 is, for example, half of the second sub-full thickness portion 530, and is approximately 0.05 mm. The second sub-eaves portion 540 constitutes the second sub-lead main surface 510. On the other hand, the second sub-eaves portion 540 does not constitute the second sub-lead back surface 520.

In this embodiment, the second sub-eaves part 540 has a second sub-front part 541 and a second sub-inner part 542.

The second sub-front part 541 projects from the second sub-full thickness part 530 toward the main lead 300. The second sub-inner portion 542 protrudes from the second sub-full thickness portion 530 toward the first sub-lead 400.

The first wire 600 is directly connected to the semiconductor element 200 and makes the semiconductor element 200 and the first sub-lead 400 electrically conductive. Specifically, the first wire 600 is bonded to the first surface electrode 211 of the semiconductor element 200 and the first sub-surface plating layer 411.

The first wire 600 has a first bonding section 610 and a second bonding section 620. The first wire 600 is made of Au and has a diameter of about 20 μm.

The first bonding portion 610 is bonded to the first subsurface plating layer 411 and has a crown-shaped lump portion.

The second bonding portion 620 is bonded to the first surface electrode 211 of the semiconductor element 200 via the first bump 630. The second bonding portion 620 has a tapered shape in which the thickness in the thickness direction z becomes smaller toward the tip.

The first bump 630 is a portion similar to the lump portion of the first bonding portion 610 . In this embodiment, the first bump 630 has a slightly smaller volume than the lump portion of the first bonding part 610. The first bump 630 overlaps the main full thickness portion 330 when viewed in the thickness direction z. Note that FIG. 10 shows an enlarged image of the second bonding section 620 of the semiconductor device shown in FIG. 1.

The second wire 700 is directly connected to the semiconductor element 200 and makes the semiconductor element 200 and the second sub-lead 500 conductive. Specifically, the second wire 700 is bonded to the second surface electrode 212 of the semiconductor element 200 and the second sub-surface plating layer 511.

The second wire 700 has a first bonding section 710 and a second bonding section 720. The second wire 700 is made of Au and has a diameter of about 20 μm.

The first bonding portion 710 is bonded to the second sub-surface plating layer 511 and has a crown-shaped lump portion.

The second bonding portion 720 is bonded to the second surface electrode 212 of the semiconductor element 200 via a second bump 730. The second bonding portion 720 has a tapered shape in which the thickness in the thickness direction z becomes smaller toward the tip.

The second bump 730 is a portion similar to the lump portion of the first bonding portion 710 . The second bump 730 overlaps the main full thickness portion 330 when viewed in the thickness direction z. In this embodiment, the second bump 730 has a slightly smaller volume than the bulk portion of the first bonding portion 710 .

The resin package 800 covers the semiconductor element 200, the main lead 300, the first sub-lead 400, the second sub-lead 500, the first wire 600, and the second wire 700. The resin package 800 is made of, for example, black epoxy resin. In addition, the resin package 800 has all of the main lead back surface 320 of the main lead 300, the first sub lead back surface 420 of the first sub lead 400, and the second sub lead back surface 520 of the second sub lead 500 in the thickness direction z downward direction. It is exposed on the side.

The resin package 800 has a resin main surface 801, a resin back surface 802, a first resin side surface 803, a second resin side surface 804, a first resin end surface 805, and a second resin end surface 806.

The main resin surface 801 faces in the same direction as the main lead main surface 310. In this embodiment, the main resin surface 801 is flat.

The resin back surface 802 faces in the same direction as the main lead back surface 320 faces. That is, the resin back surface 802 faces in the opposite direction to the direction in which the resin main surface 801 faces. The resin back surface 802 is flat. The main lead 300, the first sub-lead 400, and the second sub-lead 500 are exposed from the resin back surface 802. In this embodiment, the resin back surface 802 is flush with the main lead back surface 320, the first sub-lead back surface 420, and the second sub-lead back surface 520.

The first resin side surface 803 faces in the same direction as the first sub-lead side surface 482 of the first sub-lead 400. The first resin side surface 803 is flat. The first sub-lead 400 is exposed from the first resin side surface 803. In this embodiment, the first sub-full thickness portion 430 is exposed from the second resin side surface 804. The first resin side surface 803 is flush with the first sub-lead side surface 482. In this embodiment, the main lead 300 is further exposed on the first resin side surface 803. Specifically, on the first resin side surface 803, the main lateral connecting portion 351 of the main lead 300 is exposed. The first resin side surface 803 is flush with the end surface of the main side connecting portion 351.

The second resin side surface 804 faces in the same direction as the second sub-lead side surface 582 of the second sub-lead 500. The second resin side surface 804 is flat. The second sub-lead 500 is exposed from the second resin side surface 804. The second resin side surface 804 is flush with the second sub-lead side surface 582. In this embodiment, the second sub-full thickness portion 530 is exposed from the second resin side surface 804. In this embodiment, the main lead 300 is further exposed on the second resin side surface 804. Specifically, on the second resin side surface 804, the main lateral connecting portion 351 of the main lead 300 is exposed. The second resin side surface 804 is flush with the end surface of the main side connecting portion 351.

The first resin end surface 805 faces in the same direction as the direction in which the first sub-lead end surface 481 of the first sub-lead 400 faces. The first resin end surface 805 is flat. The first sub-lead 400 is exposed from the first resin end surface 805. The first resin end surface 805 is flush with the first sub-lead end surface 481. In this embodiment, the first sub-full thickness portion 430 is exposed from the first resin end surface 805. Similarly, the first resin end surface 805 faces in the same direction as the second sub-lead end surface 581 of the second sub-lead 500. The second sub-lead 500 is exposed from the first resin end surface 805. The first resin end surface 805 is flush with the second sub-lead end surface 581. In this embodiment, the second sub-full thickness portion 530 is exposed from the first resin end surface 805.

The second resin end surface 806 faces in the opposite direction to the direction in which the first resin end surface 805 faces. The second resin end surface 806 is flat. The main lead 300 is exposed from the second resin end surface 806. In this embodiment, the main rear connecting portion 352 is exposed from the second resin end surface 806. The second resin end surface 806 is flush with the end surface of the main rear connecting portion 352.

Note that the reason why the surface of the resin is flush with the surface of the lead (main lead 300, first sub-lead 400, or second sub-lead 500) is that when manufacturing the semiconductor device 101, the lead frame and This is because the resin members that will become the resin package are diced all at once. FIG. 11 shows a cross-sectional view of one step in the method for manufacturing the semiconductor device shown in FIG. This figure shows the vicinity of the first sub-lead 400. Note that in this embodiment, the leads and the resin member are diced along line Ct1 in the figure.

Next, the effects of this embodiment will be explained.

In this embodiment, the semiconductor element 200 has a portion that does not overlap the main lead 300 when viewed in the thickness direction z of the semiconductor element 200 . According to such a configuration, the size of the main lead 300 can be made relatively smaller than the size of the semiconductor element 200 when viewed in the thickness direction z. As a result, the size of the resin package 800 in the thickness direction z is determined not by the main lead 300 but by the semiconductor element 200. Thereby, the size of the semiconductor device 101 in the thickness direction z can be reduced.

In this embodiment, the main lead 300 includes a main full-thickness section 330 and a main canopy section 340 . According to such a configuration, the bonding area between the semiconductor element 200 and the main lead 300 can be increased. Thereby, the semiconductor element 200 can be reliably bonded to the main lead 300.

The second bonding portion 620 of the first wire 600 is bonded to the first surface electrode 211 via the first bump 630, and the second bonding portion 720 of the second wire 700 is bonded to the second surface electrode 211 via the second bump 730. By configuring the first wire 600 and the second wire 700 to be joined to each other, the heights of the first wire 600 and the second wire 700 in the thickness direction z can be reduced. This contributes to lowering the height of the semiconductor device 101 in the thickness direction z. Therefore, according to this embodiment, the semiconductor device 101 can be made smaller.

Since the first surface electrode 211 as a gate electrode is spaced apart from the first sub-lead 400 and the second sub-lead 500 from the second surface electrode 212 as a source electrode, the length of the first wire 600 is can be made longer than the second wire 700. The longer the first wire 600 is, the easier it is to increase the bonding strength, especially at the second bonding portion 620. Generally, the first surface electrode 211 as a gate electrode is formed on a relatively smooth surface of the semiconductor layer 231 with an insulating layer (not shown) interposed therebetween. Such a first surface electrode 211 is relatively difficult to improve the bonding strength of wire bonding. On the other hand, the second surface electrode 212 as a source electrode is often connected to a metal portion filled in a plurality of trenches (vertical holes) formed in the semiconductor layer 231. With such a configuration, the second surface electrode 212 can relatively easily improve the bonding strength of wire bonding. Therefore, it is advantageous to bond the first wire 600, which can easily increase the bonding strength, to the first surface electrode 211, which serves as a gate electrode, where there is a concern that the bonding strength is relatively insufficient, in order to avoid problems such as wire peeling. .

Since the main eaves portion 340 has the main front portion 341, the bonding strength between the main lead 300 and the resin package 800 can be increased. Further, while bringing the semiconductor element 200 and the first sub-lead 400 and the second sub-lead 500 close together, it is possible to avoid the main lead back surface 320 from coming unduly close to the first sub-lead back surface 420 and the second sub-lead back surface 520. can do.

Since the main eaves portion 340 has the main side portions 342 and the main rear portion 343, the bonding strength between the main lead 300 and the resin package 800 can be increased. A configuration in which the entire main full-thickness section 330 is surrounded by the main eaves section 340 is suitable for increasing the bonding strength between the main lead 300 and the resin package 800.

The main side connecting portion 351 and the main rear connecting portion 352 appropriately hold the main lead 300 during the manufacturing process of the semiconductor device 101. The end face in the y direction of the main side connecting portion 351 and the end face in the x direction of the main rear connecting portion 352 are exposed from the resin package 800 but are separated from the back surface 320 of the main lead. Therefore, there is little possibility that the solder for surface mounting the semiconductor device 101 will erroneously spread to the y-direction end face of the main side connecting portion 351 and the x-direction end face of the main rear connecting portion 352.

By forming the main surface plating layer 311 on the main lead main surface 310, the bonding strength between the back electrode 220 of the semiconductor element 200 and the main lead main surface 310 can be increased. Since the main surface plating layer 311 overlaps all of the main eaves portion 340, the area that can be used as the main lead main surface 310 can be expanded.

Since the first sub-lead 400 has the first sub-eaves portion 440, the bonding strength between the first sub-lead 400 and the resin package 800 can be increased. By having the first sub-front part 441 of the first sub-eaves part 440, while increasing the bonding strength with the resin package 800, the distance between the first sub-lead back surface 420 and the main lead back surface 320 becomes unduly close. You can avoid putting it away. This means that even if the entire semiconductor device 101 is miniaturized, the first sub-lead back surface 420 and the main lead back surface 320 will be affected by the solder adhering to the first sub-lead back surface 420 and the solder adhering to the main lead back surface 320. This means that it is possible to prevent the problem of conduction occurring through the solder.

Since the first sub-eaves part 440 has the first sub-inner part 442, the bonding strength between the first sub-lead 400 and the resin package 800 can be increased. By having the first sub-inner part 442 of the first sub-eaves part 440, the bonding strength with the resin package 800 is increased, and the distance between the first sub-lead back surface 420 and the second sub-lead back surface 520 is unreasonable. It is possible to avoid approaching the This means that even if the entire semiconductor device 101 is downsized, the solder attached to the first sub-lead back surface 420 and the second sub-lead back surface 520 will be This means that it is possible to prevent the problem of electrical conduction via the solder adhering to the back surface 520.

In the present embodiment, the first sub-lead 400 has a first sub-lead end surface 481 connected to the first sub-lead back surface 420. The first sub-lead end face 481 is exposed from the resin package 800. Therefore, the back surface 420 of the first sub-lead can be made wider. Thereby, the tape 901 (see FIG. 11) used in resin molding for forming the resin package 800 and the first sub-lead back surface 420 can be more firmly bonded. Therefore, during resin molding, it is possible to prevent the resin material from entering between the tape 901 and the back surface 420 of the first sub-lead. This can prevent resin burrs from forming on the back surface 420 of the first sub-lead. Similarly, the same effect can be achieved by exposing the first sub-lead side surface 482 from the resin package 800. Furthermore, the effect on the first sub-lead 400 is also due to the fact that the second sub-lead end surface 581 of the second sub-lead 500 is exposed from the resin package 800 and the second sub-lead side surface 582 is exposed. The same effect as described above is achieved.

By forming the first sub-surface plating layer 411 on the first sub-lead main surface 410, the bonding strength between the first wire 600 and the first sub-lead main surface 410 can be increased.

Since the second sub-lead 500 has the second sub-eaves portion 540, the bonding strength between the second sub-lead 500 and the resin package 800 can be increased. Since the second sub-eaves part 540 has the second sub-front part 541, while increasing the bonding strength with the resin package 800, the distance between the second sub-lead back surface 520 and the main lead back surface 320 becomes unduly close. You can avoid putting it away.

Since the second sub-eaves part 540 has the second sub-inner part 542, the bonding strength between the second sub-lead 500 and the resin package 800 can be increased. By having the second sub-inner part 542 of the second sub-eaves part 540, the bonding strength with the resin package 800 is increased, and the distance between the second sub-lead back surface 520 and the first sub-lead back surface 420 is increased. It is possible to avoid approaching the This means that even if the entire semiconductor device 101 is downsized, the solder attached to the first sub-lead back surface 420 and the second sub-lead back surface 520 will be This means that it is possible to prevent the problem of electrical conduction via the solder adhering to the back surface 520.

By forming the second sub-surface plating layer 511 on the second sub-lead main surface 510, the bonding strength between the second wire 700 and the second sub-lead main surface 510 can be increased.

In bonding the semiconductor element 200 and the main lead surface 310 of the main lead 300, the back electrode 220 made of a single metal layer is directly bonded to the main lead surface 310, and vibration is not applied during the bonding. do not have. With such a configuration, there is no need to set a margin area in consideration of vibration in the area of the main lead 300 located around the semiconductor element 200. This is advantageous for downsizing the semiconductor device 101.

A second embodiment of the present invention will be described using FIGS. 12 and 13.

FIG. 12 is a perspective view of a semiconductor device according to a second embodiment of the invention. FIG. 13 is a plan view of the semiconductor device shown in FIG. 12.

The semiconductor device 102 shown in these figures is different from the semiconductor device 101 in the shapes of the first sub-lead 400 and the second sub-lead 500. The configuration other than what will be described below is the same as that of the semiconductor device 101, so the same reference numerals as in the first embodiment are given, and the explanation will be omitted.

In the present embodiment, the first sub-lead 400 includes a first sub-extending portion 460 in addition to a first sub-full thickness portion 430 and a first sub-eaves portion 440 .

In this embodiment, the first sub-full thickness portion 430 is not exposed from the resin package 800.

The first sub-extending portion 460 extends from the first sub-full thickness portion 430 in a direction perpendicular to the thickness direction z. The thickness of the first sub-extending portion 460 is, for example, half of the first sub-full thickness portion 430, and is approximately 0.05 mm. The first sub-extending portion 460 constitutes the first sub-lead back surface 420. On the other hand, the first sub-extending portion 460 does not constitute the first sub-lead main surface 410. The first sub-extending portion 460 is exposed from the resin package 800 toward the outside of the resin package 800 when viewed in the thickness direction z. Specifically, the first sub-extending portion 460 is exposed from the resin package 800 in the direction x and the direction y from the resin package 800. Therefore, the first sub-extending portion 460 constitutes a first sub-lead end surface 481 and a first sub-lead side surface 482.

In this embodiment, the first sub-extending portion 460 has a first sub-rear portion 461 and a first sub-lateral portion 462.

The first secondary rear portion 461 projects from the first secondary full thickness portion 430 toward the side opposite to the side where the main lead 300 is located. The first secondary rear portion 461 constitutes a first secondary lead end surface 481. The first secondary side portion 462 protrudes from the first secondary full thickness portion 430 toward the side opposite to the side where the second secondary lead 500 is located. The first secondary side portion 462 constitutes a first secondary lead side surface 482.

In this embodiment, the second sub-full thickness portion 530 is not exposed from the resin package 800.

The second sub-extending portion 560 extends from the second sub-full thickness portion 530 in a direction perpendicular to the thickness direction z. The thickness of the second sub-extension portion 560 is, for example, half of the second sub-full thickness portion 530, and is approximately 0.05 mm. The second sub-extending portion 560 constitutes the second sub-lead back surface 520. On the other hand, the second sub-extending portion 560 does not constitute the second sub-lead main surface 510. The second sub-extending portion 560 is exposed from the resin package 800 toward the outside of the resin package 800 when viewed in the thickness direction z. Specifically, the second sub-extending portion 560 is exposed from the resin package 800 in the direction x and the direction y from the resin package 800. Therefore, the second sub-extending portion 560 forms a second sub-lead end surface 581 and a second sub-lead side surface 582.

In this embodiment, the second sub-extending portion 560 has a second sub-rear portion 561 and a second sub-lateral portion 562.

The second secondary rear portion 561 projects from the second secondary full thickness portion 530 toward the side opposite to the side where the main lead 300 is located. The second secondary rear portion 561 constitutes a second secondary lead end surface 581. The second secondary side portion 562 protrudes from the second secondary full thickness portion 530 toward the side opposite to the side where the first secondary lead 400 is located. The second secondary side portion 562 constitutes a second secondary lead side surface 582.

Note that when manufacturing the semiconductor device 102, the leads and the resin member are diced along the line Ct2 in FIG. 11 used in the description of the semiconductor device 101.

Next, the effects of this embodiment will be explained.

According to this embodiment, in addition to the same effects as those described regarding the semiconductor device 101, the following effects are achieved.

According to the present embodiment, when cutting the first sub-lead 400 of the lead frame, it is not necessary to dice the first sub-full thickness portion 430, and it is only necessary to dice the relatively thin portion. The occurrence of burrs is proportional to the thickness of the lead frame being cut. Therefore, it is possible to suppress the occurrence of metal burrs that may be formed by cutting the portion of the lead frame that is to become the first sub-lead 400. Similarly, the generation of metal burrs that may be formed by cutting the portion of the lead frame that is to become the second sub-lead 500 can be suppressed.

In fact, when the main lead 300, first sub-lead 400, and second sub-lead 500 are patterned by etching, the boundary between the main full-thickness part 330 and the main eaves part 340 is as shown in FIGS. 1 to 13, etc. The sharp corners shown in are not formed, and a curved surface may be formed. Similarly, in the first sub-lead 400, the boundary between the first sub-full thickness part 430 and the first sub-eave part 440, the boundary between the first sub-eave part 440 and the first sub-extension part 460, and the boundary between the second sub-lead 500 The boundary between the second sub full thickness part 530 and the second sub eave part 540, the boundary between the second sub eave part 540 and the second sub extending part 560, etc. may also be curved surfaces. This is because even if the semiconductor devices 101 and 102 are designed with the shapes shown in FIGS. This is because it may occur.

FIG. 15 shows a modification of the semiconductor device. As shown in the figure, the positions of the first surface electrode 211 as the gate electrode, the second surface electrode 212 as the source electrode, the second bonding parts 620 and 720, the first bump 630, and the second bump 730 are , is different from the semiconductor device shown in FIG. For the explanation of the semiconductor device shown in FIG. 15 other than these positions, the explanation given regarding the semiconductor device 101 can be applied, so the explanation other than the positions will be omitted. In FIG. 2, the first surface electrode 211, which is a gate electrode, is located on the left side of the semiconductor element 200, and the second surface electrode 212, which is a source electrode, is located on the right side of the semiconductor element 200. Further, the second bonding section 620 and the first bump 630 were located on the left side of the second bonding section 720 and the second bump 730. On the other hand, in FIG. 15, the first surface electrode 211, which is a gate electrode, is located on the right side of the semiconductor element 200, and the second surface electrode 212, which is a source electrode, is located on the left side of the semiconductor element 200. Further, the second bonding section 620 and the first bump 630 are located on the right side of the second bonding section 720 and the second bump 730. In this way, the positions of the first surface electrode 211 serving as the gate electrode and the second surface electrode 212 serving as the source electrode in plan view can be freely changed.

The present invention is not limited to the embodiments described above. The specific configuration of each part of the present invention can be changed in design in various ways. The semiconductor element is not limited to a transistor, but may be a diode, for example.

16 to 24 show an example of a semiconductor device according to a third embodiment of the present invention.

The semiconductor device 101 of this embodiment includes a semiconductor element 200, a main lead 300, a first sub-lead 400, a second sub-lead 500, a first wire 600, a second wire 700, and a resin package 800. The semiconductor device 101 is configured as a relatively small semiconductor device that can be surface-mounted, and examples of the size include an x-direction dimension of about 0.8 mm, a y-direction dimension of about 0.6 mm, and a z-direction dimension of about 0.8 mm. The directional dimension is about 0.36 mm. Note that the z direction is the thickness direction of the semiconductor element, the main lead, the first sub-lead, and the second sub-lead as referred to in the present invention. FIG. 16 is a perspective view of the semiconductor device 101 viewed from above in the z direction. FIG. 17 is a perspective view of the semiconductor device 101 viewed from below in the z direction. FIG. 18 is a plan view of the semiconductor device 101. FIG. 19 is a cross-sectional view in the zx plane taken along line XIX-XIX in FIG. 18. FIG. 20 is a cross-sectional view in the zx plane along line XX-XX in FIG. 18. FIG. 21 is an enlarged cross-sectional view of essential parts in the zx plane that crosses the semiconductor element 200. FIG. 22 is a cross-sectional view in the yz plane along line XXII-XXII in FIG. 18. FIG. 23 is a cross-sectional view in the yz plane along line XXIII-XXIII in FIG. 18. FIG. 24 is a cross-sectional view in the yz plane along line XXIV-XXIV in FIG. 18.

In this embodiment, the semiconductor element 200 is configured as a so-called transistor. The semiconductor element 200 has a front surface 201 and a back surface 202, and a first surface electrode 211, a second surface electrode 212, and a back surface electrode 220 are formed. The front surface 201 and the back surface 202 face oppositely to each other in the z direction. To give an example of the size of the semiconductor element 200, the dimension in the x direction is about 300 μm, and the dimension in the y direction is about 300 μm.

As shown in FIG. 25, the first surface electrode 211 and the second surface electrode 212 are formed on the surface 201, and are each formed by a portion of an electrode layer 213 made of, for example, an Au plating layer. In this embodiment, the first surface electrode 211 is the gate electrode, and the second surface electrode 212 is the source electrode. In this embodiment, in FIGS. 18 and 25, the first surface electrode 211 is located on the left side in the x direction, and the second surface electrode 212 is located on the right side in the x direction. Further, the first surface electrode 211 is located on the lower side in the y-direction diagram, and the second surface electrode 212 is located on the upper side in the y-direction diagram. A back electrode 220 is formed on the back surface 202. In this embodiment, the back electrode 220 is a drain electrode.

A removed region 214 is formed by removing a portion of the electrode layer 231. The removed region 214 has a shape surrounding the first surface electrode 211. More specifically, the removal region 214 includes a portion extending parallel to each other along the four sides of the semiconductor element 200 and a portion located across a relatively large area to surround the first surface electrode 211. There is. The first surface electrode 211 and the second surface electrode 212 are insulated by the annular removed region 214.

The peripheral area of the second surface electrode 212 is an active area 216. A MOSFET 217 is built into the active region 216 at a portion located inward from the surface 201 in the z direction. MOSFET 217 is composed of a plurality of unit cells 218 arranged in a matrix. Note that the arrangement form of the plurality of unit cells 218 is not limited to a matrix form, and may be, for example, a stripe form or a staggered form.

Note that in this embodiment, one second surface electrode 212 is provided as a source electrode, but the present invention is not limited to this, and a plurality of second surface electrodes 212 may be provided.

FIG. 21 shows the vicinity of the back electrode 220 of the semiconductor element 200. The semiconductor element 200 of this embodiment has a semiconductor layer 231 and a eutectic layer 232. The semiconductor layer 231 is a layer in which parts that function as transistors are built, and is made of, for example, Si. The eutectic layer 232 is made of a eutectic of the semiconductor forming the semiconductor layer 231 and metal. In this embodiment, the eutectic layer 232 is made of a eutectic of Si as a semiconductor and Au as a metal. The eutectic layer 232 is formed by stacking layers of Au on the semiconductor layer 231 and then heating them to form an alloy. A back electrode 220 is laminated below the eutectic layer 232 in the z direction. The back electrode 220 is, for example, an Au layer formed by vapor deposition on the eutectic layer 232, and is an example of a single metal layer in the present invention. The thickness of the eutectic layer 232 is, for example, about 1200 nm. The back electrode 220 as a single metal layer has a thickness of, for example, about 600 nm, which is thinner than the eutectic layer 232. In this embodiment, the surface of the eutectic layer 232 facing downward in the z direction is defined as the back surface 202 of the semiconductor element 200.

The main lead 300 has a die pad section 310, a main back terminal section 320, a main full thickness section 330, and a main eaves section 340. The main lead 300 is formed by patterning, such as etching, a metal plate made of, for example, Cu.

The die pad portion 310 faces upward in the z direction, and is a portion on which the semiconductor element 200 is mounted. In this embodiment, the die pad section 310 has a rectangular shape with a dimension in the x direction of about 0.4 mm and a dimension in the y direction of about 0.5 mm. Further, in this embodiment, a main surface plating layer 311 is formed on the die pad portion 310. The main surface plating layer 311 is formed over the entire area of the die pad section 310. The main surface plating layer 311 is made of Ag and has a thickness of about 2 μm, for example. In addition, in FIG. 16, for convenience of understanding, the main surface plating layer 311 is halftone.

The main back terminal section 320 faces downward in the z direction on the opposite side from the die pad section 310, and is used for surface mounting the semiconductor device 101. The main back terminal portion 320 has a rectangular shape with a dimension in the x direction of about 0.18 mm and a dimension in the y direction of about 0.48 mm. The main back terminal section 320 completely overlaps the die pad section 310 when viewed in the z direction, and is included in the die pad section 310. In this embodiment, a main back plating layer 321 is formed on the main lead 300 . The main back plating layer 321 is laminated on a portion of the main lead 300 where the main back terminal portion 320 is to be formed, and is made of, for example, Ni, Sn, or an alloy thereof and has a thickness of about 0.06 mm. In this embodiment, for convenience, the lower surface of the main back surface plating layer 321 in the z direction is defined as the main back surface terminal section 320; however, for example, in a configuration that does not have the main back surface plating layer 321, the main back surface is A terminal portion 320 may also be configured.

The main full thickness portion 330 is a portion extending from the die pad portion 310 to the main back terminal portion 320 in the z direction. In this embodiment, the main full-thickness section 330 refers to a portion made of Cu excluding the main back plating layer 321, and has a thickness of about 0.1 mm. The main full-thickness section 330, like the main back terminal section 320, has an x-direction dimension of about 0.18 mm and a y-direction dimension of about 0.48 mm.

The main eaves portion 340 protrudes from the die pad portion 310 side portion of the main full thickness portion 330 in the x direction and the y direction that are perpendicular to the z direction. The upper end surface of the main eaves section 340 in the z direction is flush with the main full thickness section 330 . In this embodiment, the main eaves section 340 has a main front section 341, a main side section 342, and a main rear section 343. The thickness of the main eaves portion 340 is, for example, half of the main full thickness portion 330, and is approximately 0.05 mm.

The main front portion 341 protrudes from the main full thickness portion 330 toward the first sub-lead 400 and the second sub-lead 500 in the x direction. In this embodiment, the main front portion 341 has a rectangular shape with a dimension in the x direction of about 0.21 mm and a dimension in the y direction of about 0.5 mm.

The main side portions 342 protrude from the main full thickness portion 330 in the y direction. In this embodiment, two main side portions 342 are formed. The main side portion 342 has an x-direction dimension of about 0.18 mm and a y-direction dimension of about 0.01 mm. Further, in this embodiment, the main lead 300 has two main lateral connecting parts 351. The main side connecting portion 351 extends from the main side portion 342 of the main eave portion 340 and has the same thickness as the main side portion 342. The end surface of the main side connecting portion 351 in the y direction is exposed from the resin package 800. The main side connecting portion 351 has an x-direction dimension of about 0.1 mm and a y-direction dimension of about 0.04 mm.

The main rear portion 343 protrudes from the main full thickness portion 330 to the side opposite to the main front portion 341 . The main rear portion 343 has a dimension in the x direction of about 0.01 mm and a dimension in the y direction of about 0.5 mm. In this embodiment, the main lead 300 has two main rear connections 352. The main rear connecting portion 352 extends from the main rear portion 343 of the main eave portion 340 and has the same thickness as the main rear portion 343. The end surface of the main rear connecting portion 352 in the x direction is exposed from the resin package 800. The main rear connecting portion 352 has an x-direction dimension of about 0.04 mm and a y-direction dimension of about 0.1 mm.

With the above-described configuration, in this embodiment, the entire main full-thickness section 330 is surrounded by the main eaves section 340 when viewed in the z direction. Further, the upper surface in the z direction of the main full-thickness section 330 and the main eaves section 340 serves as the die pad section 310, and the main surface plating layer 311 overlaps all of the main full-thickness section 330 and the main eaves section 340. Further, as clearly shown in FIG. 18, about half of the semiconductor element 200 overlaps with the main full thickness part 330 when viewed in the z direction, and about the other half overlaps with the main front part 341 of the main eaves part 340. There is. The first surface electrode 211 as a gate electrode overlaps with the main full thickness portion 330, and the second surface electrode 212 as a source electrode overlaps with the main front portion 341 of the main eaves portion 340.

As shown in FIG. 21, in the semiconductor element 200, the back electrode 220 is bonded to the die pad portion 310 (main surface plating layer 311). Specifically, the back electrode 220 as a single metal layer is directly bonded to the die pad portion 310 (main surface plating layer 311) by, for example, thermocompression bonding. In this thermocompression bonding, no vibration is applied, only heat and pressure are applied.

The first sub-lead 400 is arranged apart from the main lead 300 in the x direction, and includes a first wire bonding part 410, a first sub-back terminal part 420, a first sub-full thickness part 430, and a first sub-lead 400. It has an eaves part 440. The first sub-lead 400 is formed, for example, by subjecting a metal plate made of Cu to patterning such as etching.

The first wire bonding part 410 faces upward in the z direction, and is a part to which the first wire 600 is bonded. In this embodiment, the first wire bonding section 410 has a rectangular shape with a dimension in the x direction of about 0.2 mm and a dimension in the y direction of about 0.2 mm. Further, in this embodiment, a first sub-surface plating layer 411 is formed on the first wire bonding portion 410. The first sub-surface plating layer 411 is formed over the entire area of the first wire bonding section 410. The first sub-surface plating layer 411 is made of Ag and has a thickness of about 2 μm, for example. Note that in FIG. 16, for convenience of understanding, the first sub-surface plating layer 411 is halftone.

The first sub-back terminal section 420 faces downward in the z direction on the opposite side from the first wire bonding section 410, and is used for surface mounting the semiconductor device 101. The first sub-back terminal portion 420 has a rectangular shape with a dimension in the x direction of about 0.18 mm and a dimension in the y direction of about 0.13 mm. The first sub-back terminal section 420 completely overlaps the first wire bonding section 410 when viewed in the z direction, and is included in the first wire bonding section 410 . In this embodiment, the first sub-lead 400 has a first sub-back plating layer 421 formed thereon. The first sub-back surface plating layer 421 is laminated on a portion of the first sub-lead 400 for forming the first sub-back terminal section 420, and is made of, for example, Ni, Sn, or these with a thickness of about 0.06 mm. Made of alloy. In this embodiment, for convenience, the lower surface in the z direction of the first sub-back plating layer 421 is defined as the first sub-back terminal part 420, but for example, in a configuration that does not have the first sub-back plating layer 421, the above-mentioned Cu The first sub-back terminal section 420 may be constituted by a portion consisting of.

The first sub-full thickness portion 430 is a portion extending from the first wire bonding portion 410 to the first sub-back terminal portion 420 in the z direction. In this embodiment, the first sub-full thickness portion 430 refers to a portion made of Cu excluding the first sub-back plating layer 421, and has a thickness of approximately 0.1 mm. The first sub-full thickness section 430, like the first sub-back terminal section 420, has an x-direction dimension of about 0.18 mm and a y-direction dimension of about 0.13 mm.

The first sub-eaves part 440 protrudes from the first sub-full-thickness part 430 on the first wire bonding part 410 side in the x direction and the y direction, which are perpendicular to the z direction. The upper end surface of the first sub-eaves part 440 in the z direction is flush with the first sub-full thickness part 430. In this embodiment, the first sub-eaves part 440 has a first sub-front part 441, a first sub-lateral part 442, and a first sub-rear part 443. The thickness of the first sub-eaves portion 440 is, for example, half the thickness of the first sub-full thickness portion 430, and is approximately 0.05 mm.

The first sub-front part 441 projects from the first sub-full thickness part 430 toward the main lead 300 in the x direction. In this embodiment, the first sub-front part 441 has a dimension in the x direction of about 0.01 mm and a dimension in the y direction of about 0.2 mm.

The first secondary side portion 442 protrudes from the first secondary full thickness portion 430 in the y direction. In this embodiment, two first sub-lateral parts 442 are formed. In FIG. 18, the first sub-lateral portion 442 located at the upper side of the figure in the y-direction protrudes toward the second sub-lead 500, and has an x-direction dimension of approximately 0.2 mm and a y-direction dimension of approximately 0.06 mm. be. The first sub-lateral portion 442 located at the lower part of the figure in the y direction has a dimension in the y direction of about 0.2 mm in the x direction, and a dimension in the y direction of about 0.01 mm. Further, in this embodiment, the first sub-lead 400 has a first sub-lateral connection portion 451. The first sub-lateral connecting part 451 extends downward in the y-direction view in FIG. ing. The y-direction end face of the first sub-lateral connecting portion 451 is exposed from the resin package 800. The first sub-lateral connecting portion 451 has an x-direction dimension of about 0.1 mm and a y-direction dimension of about 0.04 mm.

The first secondary rear part 443 protrudes from the first secondary full thickness part 430 to the side opposite to the first secondary front part 441 . The first sub-rear portion 443 has an x-direction dimension of about 0.01 mm and a y-direction dimension of about 0.14 mm. In this embodiment, the first sub-lead 400 has a first sub-rear connecting portion 452. The first secondary rear connecting part 452 extends from the first secondary rear part 443 of the first secondary eave part 440 and has the same thickness as the first secondary rear part 443. The x-direction end surface of the first sub-rear connecting portion 452 is exposed from the resin package 800. The first sub-rear connecting portion 452 has a dimension in the x direction of about 0.04 mm and a dimension in the y direction of about 0.1 mm.

With the above-described configuration, in this embodiment, the entire first sub full thickness section 430 is surrounded by the first sub eave section 440 when viewed in the z direction. Further, the upper surfaces in the z direction of the first sub full thickness section 430 and the first sub eaves section 440 are the first wire bonding section 410, and the first sub surface plating layer 411 is formed on the first sub full thickness section 430 and the first sub eave section 440. It overlaps all of the first sub-eaves part 440.

The second sub-lead 500 is spaced apart from the main lead 300 in the x-direction at a position lined up with the first sub-lead 400 in the y-direction, and includes a second wire bonding portion 510 and a second sub-back terminal portion. 520, a second sub full thickness section 530, and a second sub eave section 540. The second sub-lead 500 is formed by patterning, such as etching, a metal plate made of, for example, Cu.

The second wire bonding portion 510 faces upward in the z direction, and is a portion to which the second wire 700 is bonded. In this embodiment, the second wire bonding section 510 has a rectangular shape with a dimension in the x direction of about 0.2 mm and a dimension in the y direction of about 0.2 mm. Further, in this embodiment, a second sub-surface plating layer 511 is formed on the second wire bonding portion 510. The second sub-surface plating layer 511 is formed over the entire second wire bonding section 510. The second sub-surface plating layer 511 is made of Ag and has a thickness of about 2 μm, for example. In addition, in FIG. 16, for convenience of understanding, a halftone is applied to the second sub-surface plating layer 511.

The second sub-back terminal section 520 faces downward in the z direction on the opposite side from the second wire bonding section 510, and is used for surface mounting the semiconductor device 101. The second sub-back terminal portion 520 has a rectangular shape with a dimension in the x direction of about 0.18 mm and a dimension in the y direction of about 0.13 mm. The second sub-back terminal portion 520 completely overlaps the second wire bonding portion 510 when viewed in the z direction, and is included in the second wire bonding portion 510 . In this embodiment, a second sub-back surface plating layer 521 is formed on the second sub-lead 500. The second sub-back surface plating layer 521 is laminated on a portion of the second sub-lead 500 for forming the second sub-back terminal section 520, and is made of, for example, Ni, Sn, or these materials with a thickness of about 0.06 mm. Made of alloy. In this embodiment, for convenience, the lower surface in the z direction of the second sub-back plating layer 521 is defined as the second sub-back terminal part 520, but for example, in a configuration that does not have the second sub-back plating layer 521, the above-mentioned Cu The second sub-back surface terminal portion 520 may be configured by a portion consisting of.

The second sub-full thickness section 530 is a portion extending from the second wire bonding section 510 to the second sub-back terminal section 520 in the z direction. In this embodiment, the second sub-full thickness section 530 refers to a portion made of Cu excluding the second sub-back surface plating layer 521, and has a thickness of approximately 0.1 mm. The second sub-full thickness section 530, like the second sub-back terminal section 520, has an x-direction dimension of about 0.18 mm and a y-direction dimension of about 0.13 mm.

The second sub-eaves portion 540 protrudes from a portion of the second sub-full thickness portion 530 on the second wire bonding portion 510 side in the x direction and the y direction that are perpendicular to the z direction. The upper end surface of the second sub-eaves part 540 in the z direction is flush with the second sub-full thickness part 530. In this embodiment, the second sub-eaves part 540 has a second sub-front part 541, a second sub-lateral part 542, and a second sub-rear part 543. The thickness of the second sub-eaves portion 540 is, for example, half of the second sub-full thickness portion 530, and is approximately 0.05 mm.

The second sub-front part 541 projects from the second sub-full thickness part 530 toward the main lead 300 in the x direction. In this embodiment, the second sub-front part 541 has a dimension in the x direction of about 0.01 mm and a dimension in the y direction of about 0.2 mm.

The second secondary side portion 542 protrudes from the second secondary full thickness portion 530 in the y direction. In this embodiment, two second sub-lateral parts 542 are formed. In FIG. 18, the second sub-lateral portion 542 located lower in the figure in the y-direction protrudes toward the first sub-lead 400, and has an x-direction dimension of approximately 0.2 mm and a y-direction dimension of approximately 0.06 mm. be. The second sub-lateral portion 542 located at the upper side in the y-direction figure has an x-direction dimension of about 0.2 mm and a y-direction dimension of about 0.01 mm. Further, in this embodiment, the second sub-lead 500 has a second sub-lateral connection portion 551. The second secondary side connecting portion 551 extends upward in the y direction in FIG. 18 from the second secondary side portion 542 of the second secondary eave portion 540, and has the same thickness as the second secondary side portion 542. ing. The y-direction end surface of the second sub-lateral connecting portion 551 is exposed from the resin package 800. The second sub-lateral connecting portion 551 has a dimension in the x direction of about 0.1 mm and a dimension in the y direction of about 0.04 mm.

The second secondary rear part 543 projects from the second secondary full thickness part 530 to the opposite side to the second secondary front part 541. The second sub-rear portion 543 has an x-direction dimension of about 0.01 mm and a y-direction dimension of about 0.14 mm. In this embodiment, the second sub-lead 500 has a second sub-rear connecting portion 552. The second secondary rear connecting part 552 extends from the second secondary rear part 543 of the second secondary eave part 540, and has the same thickness as the second secondary rear part 543. The x-direction end surface of the second sub-rear connecting portion 552 is exposed from the resin package 800. The second sub-rear connecting portion 552 has an x-direction dimension of about 0.04 mm and a y-direction dimension of about 0.1 mm.

With the above-described configuration, in this embodiment, the entire second sub-full thickness section 530 is surrounded by the second sub-eaves section 540 when viewed in the z direction. Further, the upper surface in the z direction of the second sub full thickness section 530 and the second sub eaves section 540 is the second wire bonding section 510, and the second sub surface plating layer 511 is formed on the second sub full thickness section 530 and the second sub eaves section 540. It overlaps all of the second sub-eaves portion 540.

The first wire 600 is bonded to the first surface electrode 211 of the semiconductor element 200 and the first wire bonding portion 410 of the first sub-lead 400, and has a first bonding portion 610 and a second bonding portion 620. The first wire 600 is made of Au and has a diameter of about 20 μm.

The first bonding part 610 is bonded to the first wire bonding part 410 of the first sub-lead 400, and has a crown-shaped lump part. The second bonding portion 620 is bonded to the first surface electrode 211 of the semiconductor element 200 via the first bump 630. The second bonding portion 620 has a tapered shape in which the thickness in the z direction decreases toward the tip. The first bump 630 is a portion similar to the lump portion of the first bonding portion 610 . In this embodiment, the volume of the first bump 630 is slightly smaller than that of the lump portion of the first bonding portion 610 .

The second wire 700 is bonded to the second surface electrode 212 of the semiconductor element 200 and the second wire bonding portion 510 of the second sub-lead 500, and has a first bonding portion 710 and a second bonding portion 720. The second wire 700 is made of Au and has a diameter of about 20 μm.

The first bonding part 710 is bonded to the second wire bonding part 510 of the second sub-lead 500 and has a crown-shaped lump part. The second bonding portion 720 is bonded to the second surface electrode 212 of the semiconductor element 200 via a second bump 730. The second bonding portion 720 has a tapered shape in which the thickness in the z direction decreases toward the tip. The second bump 730 is a portion similar to the lump portion of the first bonding portion 710 . In this embodiment, the second bump 730 has a slightly smaller volume than the lump portion of the first bonding portion 710.

The resin package 800 covers the semiconductor element 200 and a portion of each of the main lead 300, the first sub-lead 400, and the second sub-lead 500, and is made of, for example, black epoxy resin. In addition, the resin package 800 connects all of the main back terminal portion 320 of the main lead 300, the first sub back terminal portion 420 of the first sub lead 400, and the second sub back terminal portion 520 of the second sub lead 500 in the z direction. It is exposed at the bottom. Further, in this embodiment, the distance between the upper ends of the first wire 600 and the second wire 700 in the z direction and the upper end of the resin package 800 in the z direction is about 50 μm.

Next, an example of a method for manufacturing the semiconductor device 101 will be described below with reference to FIGS. 26 to 33.

In FIGS. 26 to 32, the process of bonding the first wire 600 will be mainly described, but the second wire 700 is also bonded by the same process. First, as shown in FIG. 26, the semiconductor element 200 is bonded to the main lead 300. At this time, manufacturing efficiency can be improved by using a lead frame in which a plurality of main leads 300, first sub-leads 400, and second sub-leads 500 are connected. A capillary Cp is prepared, and a wire 601 is exposed from its tip. The wire 601 is made of Au and has a diameter of about 20 μm. Then, a ball 602 is formed at the tip of the wire 601 by generating a spark directly above the first surface electrode 211 of the semiconductor element 200 .

Next, as shown in FIG. 27, the ball 602 is joined to the first surface electrode 211 of the semiconductor element 200 by lowering the capillary Cp. Then, the capillary Cp is raised with the wire 601 fixed to the capillary Cp. As a result, a first bump 630 is formed on the first surface electrode 211, as shown in FIG.

Next, as shown in FIG. 29, a ball 602 is again formed at the tip of the wire 601 by generating a spark directly above the first wire bonding part 410 of the first sub-lead 400. Next, as shown in FIG. 30, by lowering the capillary Cp, the ball 602 is bonded to the first wire bonding portion 410 of the first sub-lead 400.

Next, the capillary Cp is moved as shown in FIG. 31 without the wire 601 being fixed to the capillary Cp. As a result, the first bonding portion 610 is first formed. Further, the tip of the capillary Cp is pressed against the first bump 630. At this time, the wire 601 is sandwiched between the capillary Cp and the first bump 630. Furthermore, heat and vibration may be applied, for example, via a support stand (not shown) that holds the main lead 300. Then, the capillary Cp is separated from the semiconductor element 200 while the wire 601 is fixed to the capillary Cp. As a result, a second bonding portion 620 is formed. FIG. 32 is an enlarged image of the second bonding portion 620 and the first bump 630 taken from above in the z direction. As clearly shown in the figure, a second bonding portion 620 having a slightly expanded shape is bonded to a first bump 630 having a circular shape in plan view.

After this, a bonding process for the first wire 600 and a bonding process for the second wire 700 are performed. For example, black epoxy resin is used to cover the semiconductor element 200, parts of the main lead 300, the first sub-lead 400, and the second sub-lead 500, and the first wire 600 and the second wire 700. to form a plate-shaped resin member. FIG. 33 shows the lead frame, semiconductor element 200, first wire 600, and second wire 700 described above, which are covered with the resin member (not shown). Then, by cutting the resin member and the lead frame together along the cutting line CL in the figure, the semiconductor device 101 shown in FIGS. 16 to 24 is obtained.

Next, the operation of the semiconductor device 101 will be explained.

According to this embodiment, the die pad section 310 and the semiconductor element 200 overlap both the main full thickness section 330 and the main eaves section 340 when viewed in the z direction. The main eaves portion 340 functions to increase the bonding strength between the main lead 300 and the resin package 800. While improving this bonding strength, it is possible to prevent the main lead 300 from protruding excessively from the semiconductor element 200. This contributes to reducing the size of the semiconductor device 101 in the z direction. Further, it is advantageous for at least one of the first surface electrode 211 and the second surface electrode 212 to overlap the main eaves portion 340 in reducing the size of the semiconductor device 101 in the z direction. The second bonding portion 620 of the first wire 600 is bonded to the first surface electrode 211 via the first bump 630, and the second bonding portion 720 of the second wire 700 is bonded to the second surface electrode 211 via the second bump 730. By configuring the first wire 600 and the second wire 700 to be joined to each other, the heights of the first wire 600 and the second wire 700 in the z direction can be reduced. This contributes to lowering the height of the semiconductor device 101 in the z direction. Therefore, according to this embodiment, the semiconductor device 101 can be made smaller.

Since the first surface electrode 211 serving as a gate electrode is farther away from the first sub-lead 400 and the second sub-lead 500 than the second surface electrode 212 serving as a source electrode, the length of the first wire 600 is can be made longer than the second wire 700. The longer the first wire 600 is, the easier it is to increase the bonding strength, especially at the second bonding portion 620. Generally, the first surface electrode 211 as a gate electrode is formed on a relatively smooth surface of the semiconductor layer 231 via an insulating layer (not shown). Such a first surface electrode 211 makes it relatively difficult to improve the bonding strength of wire bonding. On the other hand, the second surface electrode 212 as a source electrode is often connected to a metal portion filled in a plurality of trenches (vertical holes) formed in the semiconductor layer 231. With such a configuration, the second surface electrode 212 can relatively easily improve the bonding strength of wire bonding. Therefore, it is advantageous to bond the first wire 600, which can easily increase the bonding strength, to the first surface electrode 211, which serves as a gate electrode, where there is a concern that the bonding strength is relatively insufficient, in order to avoid problems such as wire peeling. .

As the first surface electrode 211 overlaps with the main full thickness portion 330 when viewed in the z direction, as shown in FIGS. 27 and 31, the first surface electrode 211 as a gate electrode may have a relatively insufficient bonding strength. However, the capillary Cp can be pressed against the capillary Cp more reliably. On the other hand, by arranging the second surface electrode 212 as a source electrode, which can relatively easily improve the bonding strength, at a position overlapping the main eaves portion 340 when viewed in the z-direction, the dimensions of the semiconductor device 101 in the z-direction can be reduced. be able to.

Since the main eaves portion 340 has the main front portion 341, the bonding strength between the main lead 300 and the resin package 800 can be increased. Furthermore, while the semiconductor element 200 and the first sub-lead 400 and the second sub-lead 500 are brought close to each other, the main back terminal section 320 and the first sub-back terminal section 420 and the second sub-back terminal section 520 are brought unduly close to each other. This can be avoided.

Since the main eaves portion 340 has the main side portions 342 and the main rear portion 343, the bonding strength between the main lead 300 and the resin package 800 can be increased. A configuration in which the entire main full-thickness section 330 is surrounded by the main eaves section 340 is suitable for increasing the bonding strength between the main lead 300 and the resin package 800.

The main side connecting portion 351 and the main rear connecting portion 352 appropriately hold the main lead 300 during the manufacturing process of the semiconductor device 101. The y-direction end face of the main side connecting portion 351 and the x-direction end face of the main rear connecting portion 352 are exposed from the resin package 800 but are separated from the main back terminal portion 320. Therefore, there is little possibility that the solder for surface mounting the semiconductor device 101 will erroneously spread to the y-direction end face of the main side connecting portion 351 and the x-direction end face of the main rear connecting portion 352.

By forming the main surface plating layer 311 on the die pad section 310, the bonding strength between the back electrode 220 of the semiconductor element 200 and the die pad section 310 can be increased. By overlapping the main surface plating layer 311 over the entire main eaves section 340, the area that can be used as the die pad section 310 can be expanded.

Since the first sub-lead 400 has the first sub-eaves portion 440, the bonding strength between the first sub-lead 400 and the resin package 800 can be increased. By having the first sub-front part 441 of the first sub-eaves part 440, while increasing the bonding strength with the resin package 800, the distance between the first sub-back terminal part 420 and the main back terminal part 320 is increased. You can avoid getting too close.

Since the first sub-eaves part 440 has the first sub-lateral parts 442 and the first sub-rear part 443, the bonding strength between the first sub-leads 400 and the resin package 800 can be increased. The configuration in which the first sub full thickness portion 430 is entirely surrounded by the first sub eave portion 440 is suitable for increasing the bonding strength between the first sub lead 400 and the resin package 800. Since the first sub-lateral part 442 on the second sub-lead 500 side is relatively large, the bonding strength is improved and the first sub-back terminal part 420 and the second sub-back terminal part 520 are It is possible to avoid approaching the

The first sub-lateral connection portion 451 and the first sub-back connection portion 452 appropriately hold the first sub-lead 400 during the manufacturing process of the semiconductor device 101. The y-direction end face of the first sub-lateral connection portion 451 and the x-direction end face of the first sub-back connection portion 452 are exposed from the resin package 800 but are spaced apart from the first sub-back terminal portion 420. Therefore, there is little possibility that the solder for surface mounting the semiconductor device 101 will erroneously spread to the y-direction end face of the first sub-lateral connection portion 451 and the x-direction end face of the first sub-back connection portion 452.

By forming the first sub-surface plating layer 411 on the first wire bonding section 410, the bonding strength between the first wire 600 and the first wire bonding section 410 can be increased.

Since the second sub-lead 500 has the second sub-eaves portion 540, the bonding strength between the second sub-lead 500 and the resin package 800 can be increased. By having the second sub-front part 541 of the second sub-eaves part 540, while increasing the bonding strength with the resin package 800, the distance between the second sub-back terminal part 520 and the main back terminal part 320 is increased. You can avoid getting too close.

Since the second sub-eaves portion 540 has the second sub-side portions 542 and the second sub-rear portions 543, the bonding strength between the second sub-leads 500 and the resin package 800 can be increased. The configuration in which the second sub full thickness portion 530 is entirely surrounded by the second sub eave portion 540 is suitable for increasing the bonding strength between the second sub lead 500 and the resin package 800. Since the second sub-lateral portion 542 on the first sub-lead 400 side is relatively large, the bonding strength is improved and the second sub-back terminal portion 520 and the first sub-back terminal portion 420 are It is possible to avoid approaching the

The second sub-lateral connection portion 551 and the second sub-back connection portion 552 appropriately hold the second sub-lead 500 during the manufacturing process of the semiconductor device 101. The y-direction end face of the second sub-lateral connection portion 551 and the x-direction end face of the second sub-back connection portion 552 are exposed from the resin package 800 but are spaced apart from the second sub-back terminal portion 520. Therefore, there is little possibility that the solder for surface mounting the semiconductor device 101 will erroneously spread to the y-direction end face of the second sub-lateral connection portion 551 and the x-direction end face of the second sub-back connection portion 552.

By forming the second sub-surface plating layer 511 on the second wire bonding section 510, the bonding strength between the second wire 700 and the second wire bonding section 510 can be increased.

In the bonding between the semiconductor element 200 and the die pad portion 310 of the main lead 300, the back electrode 220 made of a single metal layer is directly bonded to the die pad portion 310, and no vibration is applied during the bonding. With such a configuration, there is no need to set a margin area in consideration of vibration in the area of the main lead 300 located around the semiconductor element 200. This is advantageous for downsizing the semiconductor device 101.

FIG. 34 is an X-ray image of the semiconductor device 101. As clearly shown in the figure, when the main lead 300, first sub-lead 400, and second sub-lead 500 are patterned by etching, the boundary between the main full-thickness part 330 and the main eaves part 340 is ~The clear corners shown in FIG. 24 are not formed, but a curved surface is formed. Similarly, the boundary between the first sub full thickness part 440 and the first sub eave part 440 in the first sub lead 400 or the boundary between the second sub full thickness part 540 and the second sub eave part 540 in the second sub lead 500 The boundary also becomes a curved surface. This is because even if the semiconductor device 101 is designed to have the form shown in FIGS. 16 to 24, if the semiconductor device 101 has the extremely small configuration described above, the curved surface described above will inevitably occur during the etching process. .

FIG. 35 shows a semiconductor device based on the fourth embodiment of the present invention. In addition, in the figure, the same or similar elements as in the above embodiment are given the same reference numerals as in the above embodiment.

In this embodiment, the first surface electrode 211 overlaps both the main full thickness section 330 and the main eaves section 340 when viewed in the z direction. The first bump 630 and the second bonding part 620 of the first wire 600 overlap both the main full thickness part 330 and the main eaves part 340 when viewed in the z direction. In the figure, a broken line extending in the y direction overlaps the first bump 630 and second bonding portion 620 of the first wire 600. This broken line is the boundary between the main full thickness section 330 and the main eaves section 340 when viewed in the z direction. Such an embodiment also allows the semiconductor device 102 to be made smaller.

The semiconductor device according to the present invention is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device according to the present invention can be changed in design in various ways.

The semiconductor element referred to in the present invention is not limited to a transistor, and various semiconductor elements having a first surface electrode and a second surface electrode can be used.

101 Semiconductor device 102 Semiconductor device 200 Semiconductor element 201 Front surface 202 Back surface 211 First surface electrode 212 Second surface electrode 220 Back surface electrode 231 Semiconductor layer 232 Eutectic layer 300 Main lead 310 Main lead main surface 311 Main surface plating layer 320 Main lead back surface 330 Main full thickness part 340 Main eaves part 341 Main front part 342 Main lateral part 343 Main rear part 351 Main lateral connection part 352 Main rear connection part 400 First sub lead 410 First sub lead main surface 411 First sub surface Plating layer 420 First secondary lead back surface 430 First secondary full thickness part 440 First secondary eaves part 441 First secondary front part 442 First secondary inner part 460 First secondary extension part 461 First secondary rear part 462 First Sub side part 481 First sub lead end surface 482 First sub lead side surface 500 Second sub lead 510 Second sub lead main surface 511 Second sub surface plating layer 520 Second sub lead back surface 530 Second sub full thickness part 540 Second secondary eave part 541 Second secondary front part 542 Second secondary inner part 560 Second secondary extension part 561 Second secondary rear part 562 Second secondary side part 581 Second secondary lead end surface 582 Second secondary lead side surface 600 First wire 610 First bonding section 620 Second bonding section 630 First bump 700 Second wire 710 First bonding section 720 Second bonding section 730 Second bump 800 Resin package 801 Resin main surface 802 Resin back surface 803 First resin side surface 804 Second resin Side surface 805 First resin end surface 806 Second resin end surface 901 Tape Ct1 Line Ct2 Line x Direction y Direction z Thickness direction 101, 102 Semiconductor device 200 Semiconductor element 201 Front surface 202 Back surface 211 First surface electrode 212 Second surface electrode 213 Electrode layer 214 Removal region 216 Active region 217 MOSFET
218 Unit cell 220 Back electrode (single metal layer)
231 Semiconductor layer 232 Eutectic layer 300 Main lead 310 Die pad section 311 Main surface plating layer 320 Main back terminal section 321 Main back surface plating layer 330 Main full thickness section 340 Main eaves section 341 Main front section 342 Main side section 343 Main rear section 351 Main side connection part 352 Main rear connection part 400 First sub lead 410 First wire bonding part 411 First sub surface plating layer 420 First sub back terminal part 421 First sub back plating layer 430 First sub full thickness part 440 First sub-eaves part 441 First sub-front part 442 First sub-lateral part 443 First sub-rear part 451 First sub-lateral connection part 452 First sub-rear connection part 500 Second sub-lead 510 Second wire bonding Part 511 Second sub surface plating layer 520 Second sub back terminal part 521 Second sub back plating layer 530 Second sub full thickness part 540 Second sub eave part 541 Second sub front part 542 Second sub side part 543 2nd secondary rear part 551 2nd secondary side connection part 552 2nd secondary rear connection part 600 1st wire 610 1st bonding part 620 2nd bonding part 630 1st bump 700 2nd wire 710 1st bonding part 720 2nd bonding part 730 2nd Bump 800 Resin package Cp Capillary 601 Wire

Claims (4)

a semiconductor element having a first electrode and a second electrode;
a main lead on which the semiconductor element is arranged;
a first sub-lead facing the main lead;
a first wire having a first end and a second end, the first end being connected to the first electrode, and the second end being connected to the first sub-lead;
a second wire having a first end and a second end, the first end being connected to the second electrode, the first wire along the first wire when viewed in the thickness direction of the semiconductor element; a second wire on the left side of the first wire when going from the electrode to the first sub-lead;
A resin package that covers the semiconductor element, the main lead, the first sub-lead, the first wire, and the second wire, the resin package having a rectangular shape when viewed in the thickness direction of the semiconductor element,
The resin package has a first surface having a normal direction parallel to the thickness direction of the semiconductor element, and a second surface having a normal direction perpendicular to the thickness direction,
The main lead and the first sub-lead are exposed from the first surface of the resin package,
The main lead and the first sub-lead each have a first portion and a second portion exposed from the second surface of the resin package,
When viewed in the thickness direction, the first end of the second wire is larger than the first end of the first wire in a first direction parallel to the second surface of the resin package. It is offset to the 1st secondary lead side,
The semiconductor device is a semiconductor device, wherein the semiconductor element has a portion that does not overlap the main lead when viewed in the thickness direction . a semiconductor element having a first electrode and a second electrode;
a main lead on which the semiconductor element is arranged;
a first sub-lead facing the main lead;
a first wire having a first end and a second end, the first end being connected to the first electrode, and the second end being connected to the first sub-lead;
a second wire having a first end and a second end, the first end being connected to the second electrode; a second wire on the left side of the first wire when going from the electrode to the first sub-lead;
A resin package that covers the semiconductor element, the main lead, the first sub-lead, the first wire, and the second wire, the resin package having a rectangular shape when viewed in the thickness direction of the semiconductor element,
The resin package has a first surface having a normal direction parallel to the thickness direction of the semiconductor element, and a second surface having a normal direction perpendicular to the thickness direction,
The main lead and the first sub-lead are exposed from the first surface of the resin package,
The main lead and the first sub-lead each have a first portion and a second portion exposed from the second surface of the resin package,
When viewed in the thickness direction, the first end of the second wire is larger than the first end of the first wire in a first direction parallel to the second surface of the resin package. It is offset to the 1st secondary lead side,
The main lead has a main lead main surface and a main lead back surface,
The semiconductor element is arranged on the main surface of the main lead, and the back surface of the main lead is exposed from the first surface of the resin package,
The main lead includes a main full thickness part and a main eave part,
The main full thickness portion is a portion extending from the main surface of the main lead to the back surface of the main lead,
The main eave part protrudes from the main full thickness part so as to intersect with the thickness direction,
In the semiconductor device, the first electrode overlaps both the main full thickness portion and the main eaves portion when viewed in the thickness direction. a semiconductor element having a first electrode and a second electrode;
a main lead on which the semiconductor element is arranged;
a first sub-lead facing the main lead;
a first wire having a first end and a second end, the first end being connected to the first electrode, and the second end being connected to the first sub-lead;
a second wire having a first end and a second end, the first end being connected to the second electrode, the first wire along the first wire when viewed in the thickness direction of the semiconductor element; a second wire on the left side of the first wire when going from the electrode to the first sub-lead;
A resin package that covers the semiconductor element, the main lead, the first sub-lead, the first wire, and the second wire, the resin package having a rectangular shape when viewed in the thickness direction of the semiconductor element,
The resin package has a first surface having a normal direction parallel to the thickness direction of the semiconductor element, and a second surface having a normal direction perpendicular to the thickness direction,
The main lead and the first sub-lead are exposed from the first surface of the resin package,
The main lead and the first sub-lead each have a first portion and a second portion exposed from the second surface of the resin package,
When viewed in the thickness direction, the first end of the second wire is larger than the first end of the first wire in a first direction parallel to the second surface of the resin package. It is offset to the 1st secondary lead side,
The main lead has a main lead main surface and a main lead back surface,
The semiconductor element is arranged on the main surface of the main lead, and the back surface of the main lead is exposed from the first surface of the resin package,
The main lead includes a main full thickness part and a main eave part,
The main full thickness portion is a portion extending from the main surface of the main lead to the back surface of the main lead,
The main eave part protrudes from the main full thickness part so as to intersect with the thickness direction,
In the semiconductor device, the main full-thickness section is entirely surrounded by the main eaves section when viewed in the thickness direction. a semiconductor element having a first electrode and a second electrode;
a main lead on which the semiconductor element is arranged;
a first sub-lead facing the main lead;
a first wire having a first end and a second end, the first end being connected to the first electrode, and the second end being connected to the first sub-lead;
a second wire having a first end and a second end, the first end being connected to the second electrode, the first wire along the first wire when viewed in the thickness direction of the semiconductor element; a second wire on the left side of the first wire when going from the electrode to the first sub-lead;
A resin package that covers the semiconductor element, the main lead, the first sub-lead, the first wire, and the second wire, the resin package having a rectangular shape when viewed in the thickness direction of the semiconductor element,
The resin package has a first surface having a normal direction parallel to the thickness direction of the semiconductor element, and a second surface having a normal direction perpendicular to the thickness direction,
The main lead and the first sub-lead are exposed from the first surface of the resin package,
The main lead and the first sub-lead each have a first portion and a second portion exposed from the second surface of the resin package,
When viewed in the thickness direction, the first end of the second wire is larger than the first end of the first wire in a first direction parallel to the second surface of the resin package. It is offset to the 1st secondary lead side,
The main lead has a main lead main surface and a main lead back surface,
The semiconductor element is arranged on the main surface of the main lead, and the back surface of the main lead is exposed from the first surface of the resin package,
The main lead includes a main full thickness part and a main eave part,
The main full thickness portion is a portion extending from the main surface of the main lead to the back surface of the main lead,
The main eave part protrudes from the main full thickness part so as to intersect with the thickness direction,
In the semiconductor device, the main eaves portion entirely overlaps the semiconductor element when viewed in the thickness direction.

Images