JP7399964B2 - リンをドープされた窒化ケイ素膜の堆積方法 - Google Patents
リンをドープされた窒化ケイ素膜の堆積方法 Download PDFInfo
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- JP7399964B2 JP7399964B2 JP2021532847A JP2021532847A JP7399964B2 JP 7399964 B2 JP7399964 B2 JP 7399964B2 JP 2021532847 A JP2021532847 A JP 2021532847A JP 2021532847 A JP2021532847 A JP 2021532847A JP 7399964 B2 JP7399964 B2 JP 7399964B2
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- phosphorus
- substrate
- plasma
- silicon nitride
- nitrogen
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- 238000000034 method Methods 0.000 title claims description 136
- 238000000151 deposition Methods 0.000 title claims description 86
- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 71
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 71
- 239000000758 substrate Substances 0.000 claims description 103
- 230000008569 process Effects 0.000 claims description 70
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 64
- 230000008021 deposition Effects 0.000 claims description 60
- 239000007789 gas Substances 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 45
- 238000012545 processing Methods 0.000 claims description 39
- 229910052757 nitrogen Inorganic materials 0.000 claims description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 25
- 229910052698 phosphorus Inorganic materials 0.000 claims description 25
- 239000011574 phosphorus Substances 0.000 claims description 25
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 24
- 239000002243 precursor Substances 0.000 claims description 21
- 239000012159 carrier gas Substances 0.000 claims description 18
- 239000012686 silicon precursor Substances 0.000 claims description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000012688 phosphorus precursor Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- SAWKFRBJGLMMES-UHFFFAOYSA-N methylphosphine Chemical compound PC SAWKFRBJGLMMES-UHFFFAOYSA-N 0.000 claims description 4
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 claims description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 3
- 239000005046 Chlorosilane Substances 0.000 claims description 3
- LUXIMSHPDKSEDK-UHFFFAOYSA-N bis(disilanyl)silane Chemical compound [SiH3][SiH2][SiH2][SiH2][SiH3] LUXIMSHPDKSEDK-UHFFFAOYSA-N 0.000 claims description 3
- DLIJPAHLBJIQHE-UHFFFAOYSA-N butylphosphane Chemical compound CCCCP DLIJPAHLBJIQHE-UHFFFAOYSA-N 0.000 claims description 3
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 3
- GKCPCPKXFGQXGS-UHFFFAOYSA-N ditert-butyldiazene Chemical compound CC(C)(C)N=NC(C)(C)C GKCPCPKXFGQXGS-UHFFFAOYSA-N 0.000 claims description 3
- UCSVJZQSZZAKLD-UHFFFAOYSA-N ethyl azide Chemical compound CCN=[N+]=[N-] UCSVJZQSZZAKLD-UHFFFAOYSA-N 0.000 claims description 3
- JLHMVTORNNQCRM-UHFFFAOYSA-N ethylphosphine Chemical compound CCP JLHMVTORNNQCRM-UHFFFAOYSA-N 0.000 claims description 3
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims description 3
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 claims description 3
- 229940067157 phenylhydrazine Drugs 0.000 claims description 3
- NNOBHPBYUHDMQF-UHFFFAOYSA-N propylphosphine Chemical compound CCCP NNOBHPBYUHDMQF-UHFFFAOYSA-N 0.000 claims description 3
- 239000005049 silicon tetrachloride Substances 0.000 claims description 3
- MUQNAPSBHXFMHT-UHFFFAOYSA-N tert-butylhydrazine Chemical compound CC(C)(C)NN MUQNAPSBHXFMHT-UHFFFAOYSA-N 0.000 claims description 3
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 claims description 3
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 claims description 3
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 2
- -1 tetrasilane Chemical compound 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 20
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000007175 bidirectional communication Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001293 incoloy Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
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- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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Description
Claims (20)
- 処理チャンバ内で基板に材料を堆積する方法であって、
プラズマ化学気相堆積プロセス中に、基板をRF電力の存在下で堆積ガスに曝露して、基板上にリンをドープされた窒化ケイ素膜を堆積すること
を含み、ここで、
堆積ガスが、ケイ素前駆体、窒素前駆体、リン前駆体、及びキャリアガスを含み;かつ
リンをドープされた窒化ケイ素膜が、約0.1原子パーセント(at%)から約10at%の範囲のリン濃度を有する、
方法。 - 基板を堆積ガスに曝露し続けながらRF電力をオフにすることをさらに含む、請求項1に記載の方法。
- プラズマ化学気相堆積プロセスが、基板を堆積ガスに曝露し続けながらRF電力をオン/オフでパルス化することを含む、パルスプラズマプロセスである、請求項1に記載の方法。
- プラズマ化学気相堆積プロセスが、基板を堆積ガスに曝露し続けながらRF電力をオンに維持することを含む連続プラズマプロセスである、請求項1に記載の方法。
- 基板を堆積ガスに曝露し続けながら基板を水素に曝露することによって、リンをドープされた窒化ケイ素膜を高密度化することをさらに含む、請求項1に記載の方法。
- プラズマ化学気相堆積プロセス及び窒素-プラズマプロセスのサイクルを順次交互に繰り返すことによって、リンをドープされた窒化ケイ素膜を高密度化することをさらに含み、ここで、窒素-プラズマプロセスが、堆積ガスへの基板の曝露を停止する一方で、基板を窒素プラズマに曝露することを含む、請求項1に記載の方法。
- リン濃度が約0.5at%から約8at%の範囲にある、請求項1に記載の方法。
- リン濃度が約1at%から約6at%の範囲にある、請求項1に記載の方法。
- リンをドープされた窒化ケイ素膜が、約40at%から約70at%の範囲の窒素濃度を有する、請求項1に記載の方法。
- リンをドープされた窒化ケイ素膜が、約25at%から約55at%の範囲のケイ素濃度を有する、請求項1に記載の方法。
- リン前駆体が、ホスフィン、メチルホスフィン、エチルホスフィン、プロピルホスフィン、ブチルホスフィン、オキシ塩化リン、リン酸トリメチル、リン酸トリエチル、それらの異性体、又はそれらの任意の組合せを含む、請求項1に記載の方法。
- 窒素前駆体が、アンモニア、ヒドラジン、ジメチルヒドラジン、tert-ブチルヒドラジン、フェニルヒドラジン、2,2’-アゾイソブタン、アジ化エチル、それらの異性体、又はそれらの任意の組合せを含む、請求項1に記載の方法。
- ケイ素前駆体が、シラン、ジシラン、トリシラン、テトラシラン、ペンタシラン、メチルシラン、クロロシラン、ジクロロシラン、トリクロロシラン、四塩化ケイ素、ヘキサクロロジシラン、又はそれらの任意の組合せを含む、請求項1に記載の方法。
- キャリアガスが、窒素(N2)、アルゴン、ヘリウム、それらのプラズマ、又はそれらの任意の組合せを含む、請求項1に記載の方法。
- リンをドープされた窒化ケイ素膜が、ハードマスク層又はエッチング停止層である、請求項1に記載の方法。
- 処理チャンバ内で基板に材料を堆積する方法であって、
プラズマ化学気相堆積プロセス中に基板上にリンをドープされた窒化ケイ素膜を堆積させつつ、基板を堆積ガスに曝露すること
を含み、ここで、
堆積ガスが、ケイ素前駆体、窒素前駆体、リン前駆体、及びキャリアガスを含み;かつ
リンをドープされた窒化ケイ素膜が、約0.5原子パーセント(at%)から約8at%の範囲のリン濃度を有する、
方法。 - 堆積ガスが、ホスフィン、シラン、及びアンモニアを含み、リン濃度が約1at%から約6at%の範囲にある、請求項16に記載の方法。
- 処理チャンバ内で基板に材料を堆積する方法であって、
プラズマ化学気相堆積プロセス中に、基板を堆積ガスに曝露して、基板上にリンをドープされた窒化ケイ素膜を堆積することであって、
堆積ガスが、ケイ素前駆体、窒素前駆体、リン前駆体、及びキャリアガスを含み;かつ
リンをドープされた窒化ケイ素膜が、約0.1原子パーセント(at%)から約10at%の範囲のリン濃度を有する、
堆積すること;
プラズマ化学気相堆積プロセスを停止すること;次に、
窒素-プラズマプロセス中に、基板を窒素プラズマに曝露してリンをドープされた窒化ケイ素膜を高密度化すること;
窒素-プラズマプロセスを停止すること;及び
プラズマ化学気相堆積プロセス及び窒素-プラズマプロセスのサイクルを連続的に繰り返すこと
を含む、方法。 - プラズマ化学気相堆積プロセスが、基板を堆積ガスに曝露し続けながらRF電力をオン/オフでパルス化することを含む、パルスプラズマプロセスである、請求項18に記載の方法。
- プラズマ化学気相堆積プロセスが、基板を堆積ガスに曝露し続けながらRF電力をオンに維持することを含む連続プラズマプロセスである、請求項18に記載の方法。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005007748A1 (ja) | 2003-07-18 | 2005-01-27 | Az Electronic Materials (Japan) K.K. | リン含有シラザン組成物、リン含有シリカ質膜、リン含有シリカ質充填材、リン含有シリカ質膜の製造方法及び半導体装置 |
JP2007521658A (ja) | 2003-07-07 | 2007-08-02 | マイクロン テクノロジー,インコーポレイテッド | リンでドープした二酸化ケイ素含有層の形成方法及び集積回路の作製におけるトレンチ分離の形成方法 |
JP2011119575A (ja) | 2009-12-07 | 2011-06-16 | Canon Inc | 薄膜トランジスタ及びその製造方法 |
JP2015144268A (ja) | 2013-12-30 | 2015-08-06 | ラム リサーチ コーポレーションLam Research Corporation | パルスプラズマ暴露を伴うプラズマ原子層堆積 |
JP2018524808A (ja) | 2015-06-16 | 2018-08-30 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | ハライドシラン化合物及び組成物並びにそれを使用してケイ素含有膜を堆積するためのプロセス |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6413732A (en) * | 1987-07-08 | 1989-01-18 | Toshiba Corp | Method of depositing insulating film onto inp substrate |
US5902650A (en) * | 1995-07-11 | 1999-05-11 | Applied Komatsu Technology, Inc. | Method of depositing amorphous silicon based films having controlled conductivity |
US5968611A (en) * | 1997-11-26 | 1999-10-19 | The Research Foundation Of State University Of New York | Silicon nitrogen-based films and method of making the same |
EP1352107A2 (en) * | 2000-10-25 | 2003-10-15 | International Business Machines Corporation | An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same |
US6500772B2 (en) * | 2001-01-08 | 2002-12-31 | International Business Machines Corporation | Methods and materials for depositing films on semiconductor substrates |
US8061299B2 (en) * | 2004-02-17 | 2011-11-22 | Engle George M | Formation of photoconductive and photovoltaic films |
US8138104B2 (en) * | 2005-05-26 | 2012-03-20 | Applied Materials, Inc. | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure |
US20110151142A1 (en) * | 2009-12-22 | 2011-06-23 | Applied Materials, Inc. | Pecvd multi-step processing with continuous plasma |
WO2012092020A2 (en) * | 2010-12-30 | 2012-07-05 | Applied Materials, Inc. | Thin film deposition using microwave plasma |
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---|---|---|---|---|
JP2007521658A (ja) | 2003-07-07 | 2007-08-02 | マイクロン テクノロジー,インコーポレイテッド | リンでドープした二酸化ケイ素含有層の形成方法及び集積回路の作製におけるトレンチ分離の形成方法 |
WO2005007748A1 (ja) | 2003-07-18 | 2005-01-27 | Az Electronic Materials (Japan) K.K. | リン含有シラザン組成物、リン含有シリカ質膜、リン含有シリカ質充填材、リン含有シリカ質膜の製造方法及び半導体装置 |
JP2011119575A (ja) | 2009-12-07 | 2011-06-16 | Canon Inc | 薄膜トランジスタ及びその製造方法 |
JP2015144268A (ja) | 2013-12-30 | 2015-08-06 | ラム リサーチ コーポレーションLam Research Corporation | パルスプラズマ暴露を伴うプラズマ原子層堆積 |
JP2018524808A (ja) | 2015-06-16 | 2018-08-30 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | ハライドシラン化合物及び組成物並びにそれを使用してケイ素含有膜を堆積するためのプロセス |
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