JP7399361B2 - 電磁波検出器及び電磁波検出器アレイ - Google Patents

電磁波検出器及び電磁波検出器アレイ Download PDF

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Publication number
JP7399361B2
JP7399361B2 JP2023540159A JP2023540159A JP7399361B2 JP 7399361 B2 JP7399361 B2 JP 7399361B2 JP 2023540159 A JP2023540159 A JP 2023540159A JP 2023540159 A JP2023540159 A JP 2023540159A JP 7399361 B2 JP7399361 B2 JP 7399361B2
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layer
electromagnetic wave
ferroelectric layer
wave detector
dimensional material
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JPWO2023112751A5 (https=
JPWO2023112751A1 (https=
Inventor
新平 小川
政彰 嶋谷
昌一郎 福島
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10N15/15—Thermoelectric active materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08—Measuring electromagnetic field characteristics
    • G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
    • G01R29/0878—Sensors; antennas; probes; detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023540159A 2021-12-13 2022-12-05 電磁波検出器及び電磁波検出器アレイ Active JP7399361B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021201601 2021-12-13
JP2021201601 2021-12-13
PCT/JP2022/044762 WO2023112751A1 (ja) 2021-12-13 2022-12-05 電磁波検出器及び電磁波検出器アレイ

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JPWO2023112751A1 JPWO2023112751A1 (https=) 2023-06-22
JPWO2023112751A5 JPWO2023112751A5 (https=) 2023-11-15
JP7399361B2 true JP7399361B2 (ja) 2023-12-15

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US (1) US20240426887A1 (https=)
JP (1) JP7399361B2 (https=)
CN (1) CN118355512A (https=)
WO (1) WO2023112751A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7550854B2 (ja) * 2020-06-15 2024-09-13 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
CN119325261B (zh) * 2024-12-18 2025-03-25 松山湖材料实验室 一种仿生偏振视觉芯片器件及其制备方法、卷积神经网络
CN119421511B (zh) * 2025-01-02 2025-05-30 国科大杭州高等研究院 一种PbSe薄膜肖特基结探测器、制备方法及其应用

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018012076A1 (ja) 2016-07-12 2018-01-18 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
US20180144849A1 (en) 2016-11-21 2018-05-24 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Two-dimensional materials integrated with multiferroic layers
CN108198876A (zh) 2017-12-14 2018-06-22 上海集成电路研发中心有限公司 一种红外传感器以及红外信号强度的检测方法
CN108565312A (zh) 2018-03-20 2018-09-21 上海集成电路研发中心有限公司 一种石墨烯红外传感器结构
US20200127155A1 (en) 2018-10-22 2020-04-23 Shanghai Institute Of Technical Physics, Chinese Academy Of Sciences Ultra-broad spectrum detector integrated with functions of two-dimensional semiconductor and ferroelectric material
CN111370523A (zh) 2020-03-16 2020-07-03 电子科技大学 一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器
CN112071939A (zh) 2020-07-31 2020-12-11 西安交通大学 一种基于铁电半导体和薄层二维材料的光电探测器
WO2021002070A1 (ja) 2019-07-04 2021-01-07 三菱電機株式会社 電磁波検出器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3604933A (en) * 1969-01-08 1971-09-14 Carborundum Co Electromagnetic radiation-detection device comprising ferroelectric sensing, reference and temperature-stabilizing components

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018012076A1 (ja) 2016-07-12 2018-01-18 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
US20180144849A1 (en) 2016-11-21 2018-05-24 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Two-dimensional materials integrated with multiferroic layers
CN108198876A (zh) 2017-12-14 2018-06-22 上海集成电路研发中心有限公司 一种红外传感器以及红外信号强度的检测方法
CN108565312A (zh) 2018-03-20 2018-09-21 上海集成电路研发中心有限公司 一种石墨烯红外传感器结构
US20200127155A1 (en) 2018-10-22 2020-04-23 Shanghai Institute Of Technical Physics, Chinese Academy Of Sciences Ultra-broad spectrum detector integrated with functions of two-dimensional semiconductor and ferroelectric material
WO2021002070A1 (ja) 2019-07-04 2021-01-07 三菱電機株式会社 電磁波検出器
CN111370523A (zh) 2020-03-16 2020-07-03 电子科技大学 一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器
CN112071939A (zh) 2020-07-31 2020-12-11 西安交通大学 一种基于铁电半导体和薄层二维材料的光电探测器

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US20240426887A1 (en) 2024-12-26
CN118355512A (zh) 2024-07-16
JPWO2023112751A1 (https=) 2023-06-22
WO2023112751A1 (ja) 2023-06-22

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