CN118355512A - 电磁波检测器以及电磁波检测器阵列 - Google Patents

电磁波检测器以及电磁波检测器阵列 Download PDF

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Publication number
CN118355512A
CN118355512A CN202280081347.6A CN202280081347A CN118355512A CN 118355512 A CN118355512 A CN 118355512A CN 202280081347 A CN202280081347 A CN 202280081347A CN 118355512 A CN118355512 A CN 118355512A
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CN
China
Prior art keywords
electromagnetic wave
layer
ferroelectric layer
wave detector
dimensional material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280081347.6A
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English (en)
Chinese (zh)
Inventor
小川新平
岛谷政彰
福岛昌一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN118355512A publication Critical patent/CN118355512A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10N15/15—Thermoelectric active materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08—Measuring electromagnetic field characteristics
    • G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
    • G01R29/0878—Sensors; antennas; probes; detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202280081347.6A 2021-12-13 2022-12-05 电磁波检测器以及电磁波检测器阵列 Pending CN118355512A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021201601 2021-12-13
JP2021-201601 2021-12-13
PCT/JP2022/044762 WO2023112751A1 (ja) 2021-12-13 2022-12-05 電磁波検出器及び電磁波検出器アレイ

Publications (1)

Publication Number Publication Date
CN118355512A true CN118355512A (zh) 2024-07-16

Family

ID=86774613

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280081347.6A Pending CN118355512A (zh) 2021-12-13 2022-12-05 电磁波检测器以及电磁波检测器阵列

Country Status (4)

Country Link
US (1) US20240426887A1 (https=)
JP (1) JP7399361B2 (https=)
CN (1) CN118355512A (https=)
WO (1) WO2023112751A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119325261A (zh) * 2024-12-18 2025-01-17 松山湖材料实验室 一种仿生偏振视觉芯片器件及其制备方法、卷积神经网络
CN119421511A (zh) * 2025-01-02 2025-02-11 国科大杭州高等研究院 一种PbSe薄膜肖特基结探测器、制备方法及其应用

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7550854B2 (ja) * 2020-06-15 2024-09-13 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3604933A (en) * 1969-01-08 1971-09-14 Carborundum Co Electromagnetic radiation-detection device comprising ferroelectric sensing, reference and temperature-stabilizing components
WO2018012076A1 (ja) * 2016-07-12 2018-01-18 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
US11024447B2 (en) * 2016-11-21 2021-06-01 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Two-dimensional materials integrated with multiferroic layers
CN108198876B (zh) 2017-12-14 2019-09-13 上海集成电路研发中心有限公司 一种红外传感器以及红外信号强度的检测方法
CN108565312B (zh) 2018-03-20 2020-02-14 上海集成电路研发中心有限公司 一种石墨烯红外传感器结构
CN109449244B (zh) 2018-10-22 2020-06-26 中国科学院上海技术物理研究所 一种二维半导体和铁电材料功能互补型超宽光谱探测器
JP6884288B1 (ja) * 2019-07-04 2021-06-09 三菱電機株式会社 電磁波検出器
CN111370523B (zh) * 2020-03-16 2023-05-12 电子科技大学 一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器
CN112071939A (zh) 2020-07-31 2020-12-11 西安交通大学 一种基于铁电半导体和薄层二维材料的光电探测器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119325261A (zh) * 2024-12-18 2025-01-17 松山湖材料实验室 一种仿生偏振视觉芯片器件及其制备方法、卷积神经网络
CN119421511A (zh) * 2025-01-02 2025-02-11 国科大杭州高等研究院 一种PbSe薄膜肖特基结探测器、制备方法及其应用

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Publication number Publication date
JP7399361B2 (ja) 2023-12-15
US20240426887A1 (en) 2024-12-26
JPWO2023112751A1 (https=) 2023-06-22
WO2023112751A1 (ja) 2023-06-22

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