CN111370523A - 一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器 - Google Patents

一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器 Download PDF

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CN111370523A
CN111370523A CN202010183235.4A CN202010183235A CN111370523A CN 111370523 A CN111370523 A CN 111370523A CN 202010183235 A CN202010183235 A CN 202010183235A CN 111370523 A CN111370523 A CN 111370523A
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黄文�
林霖
龚天巡
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University of Electronic Science and Technology of China
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Abstract

本发明涉及一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器，包括基底：如半导体硅(Si)或氧化物钛酸锶(STO)、底电极：如镧锶锰氧(LSMO)、铁电材料：如铁酸铋(BFO)或掺铪的氧化锆(HfZrO)、以及上层的二维材料：如石墨烯。发明提出的光电探测器，利用铁电材料不同的极化方向引起二维材料电化学势的差异，通过设计铁电畴的形状，改变铁电畴的大小，利用表面等离子共振效应，得到了一种能对光电探测器吸收波段进行调控的、大面积的二维材料的光电探测器的结构。本发明的光电探测器具有结构简单、便于集成、可在室温下工作的优点，并且还可以通过在纳米尺度下简易且精确的改变铁电畴从而对传感器的响应波段进行调控。本发明提供的光电探测器可用于中远红外以及太赫兹波段。

Description

一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器
方法领域
本发明属于光通信技术领域，具体涉及一种光电探测器。
背景方法
太赫兹是介于毫米波与红外光之间的电磁波波谱区域，通常是指电磁波谱中频率从100GHz到10THz(1THz＝1012Hz)，对应的波长从3毫米到30微米。在过去的很长一段时间中，由于缺乏有效的太赫兹源和高灵敏度的探测器，这一频段一度被称为“太赫兹空白”。近年来，随着纳米科学领域和光电子学的不断发展与革新，新型的太赫兹源和探测器不断出现，以及太赫兹技术在安检、成像、物质鉴定等方面具有巨大的潜力，关于太赫兹的相关研究也得到重视。
二维材料是指电子仅可在两个维度的非纳米尺度(1-100nm)上自由运动的材料，其中石墨烯是一种典型的二维材料。石墨烯是单层碳原子以蜂窝状结构排列的二维材料，因其在光学、电学、热学、力学等诸多方面存在优异的性质，引起了全球研究者的广泛关注。石墨烯厚度仅为0.33nm，但与光有强的相互作用。未掺杂的石墨烯从近红外到可见光具有一致的响应，没有在某个波段具有独特的响应，对垂直入射的光的吸收率约为2.3％。但是，石墨烯对光的绝对吸收率不高且对光的波段不具有选择性。
发明内容
有鉴于此，本发明提出一种波长可调谐的基于图形化铁电畴的二维材料太赫兹波探测器，以铁酸铋(BFO)作为铁电材料、石墨烯作为二维材料的实例中，在远红外到太赫兹波段具有响应，且吸收波段可调。
本发明提供了一种基于铁电材料和石墨烯的光电探测器，包括：
以钛酸锶(STO)为基底，以镧锶锰氧(LSMO)为底电极，利用外延法生长一层BFO。
BFO为铁电材料，利用压电力显微镜(PFM)或水印法获得具有特定形状和大小的局域极化电畴。
单层石墨烯层，转移至上述极化的铁电材料BFO之上。
通过放置光源，即平面波，通过放置监视器，用于计算石墨烯材料的透射率、反射率、吸收率、以及表面电场强度和光生载流子数量。
更具体地，铁电材料以BFO为例，材料所使用的相关参数为Kumar等人所报道的参数。
更具体地，在模型中铁电畴的表现形式为石墨烯电化学势的变化，而铁电畴大小的变化体现在不同电化学势石墨烯的大小的不同。
本发明的优点主要有：
1.本发明证明了石墨烯可以在特定的铁电畴的影响下，体现出对某些波段具有响应的特性。
2.本发明器件具有对吸收光可调控的特性，可以通过改变铁电畴的形状以及大小来调控器件的光吸收的特性，并且器件结构简单，易于实现。
3.本发明方法具有通用性，适用于所有铁电材料的极化对石墨烯在光吸收方面的影响。
附图说明
图1为仿真器件的结构图以及BFO畴的形状和极化方向示意图
图2为在固定铁电畴的大小的条件下，器件光吸收波段和吸收率随石墨烯电化学势变化的曲线
图3为在固定石墨烯电化学势的条件下，器件光吸收波段和吸收率随铁电畴大小变化的曲线
图4为在铁电畴边长为100nm，石墨烯电化学势分别为0.001eV和0.4eV的条件下，在不同波段下的电场变化图
图5为在铁电畴边长为100nm，石墨烯电化学势分别为0.001eV和0.4eV的条件下，在特定波段的光生载流子的分布
具体实施方式
为了便于理解，下面结合附图对本发明作进一步的说明。显然，所描述的实例是本发明的一部分实例，而不是全部实例。基于本发明中的实例，本领域普通方法人员在没有做出创造性劳动的前提下获得的所有其他实例，都属于本发明的保护范围。
图1为仿真器件的结构图以及BFO局域电畴的形状和极化方向示意图。在图1中所示方位，从上至下分别为石墨烯、BFO、LSMO、STO。在图1左所示棋盘状为铁电畴的形状，其中浅色区域代表极化方向垂直石墨烯表面向上，后简述为方向向上，深色区域代表极化方向垂直石墨烯表面向下，后简述为方向向下。在利用时域有限差分法(FDTD)仿真中，具体体现在铁电畴对石墨烯电化学势上的变化。以每个极化方向相同的小方块的边长为100nm，设定极化方向向下区域所在的石墨烯的电化学势为0.001eV为例，仿真区域为长宽均为200nm的以上述区域为中心、高度为400nm的长方体为仿真区域。设置长宽边界为周期性边界条件，设置顶部和底部边界条件为完美匹配层(PML)，将吸收所有电磁波。
图2为在固定每个极化方向相同的小方块的边长为100nm，并且将极化方向向上的区域的石墨烯的电化学势固定在0.001eV的情况下，极化方向向下区域的石墨烯的电化学势从0.1eV到0.7eV对应的光吸收曲线。可以看出不同铁电材料、在底电极施加栅压的情况下，器件对光吸收的波段具有可调控的性质。对应吸收波段从低频率往高频率偏移。
图3为在将极化方向向上区域和向下区域的石墨烯的电化学势分别固定在0.001eV和0.4eV的情况下，每个极化方向相同的小方块的边长为从100nm到1μm对应的光吸收曲线。在仿真中，应当相应地设置仿真区域、源和监视器的大小。可以看出小方块的边长越大，对应的吸收波段从高频率往低频率偏移。
图4中(a)(b)(c)分别对应的是在固定每个极化方向相同的电畴的边长为100nm，并且将极化方向向上区域和向下区域的石墨烯的电化学势固定在0.001eV和0.4eV的情况下，光频率在7.532THz、14.702THz和24.281THz对应的电场分布图。可以看出固定铁电畴的大小和石墨烯的电化学势的情况下，在特定波段中不同极化方向的铁电畴的交界处存在表面等离子共振效应，体现为极强的电场强度。图5中则代表在同等条件下，在14.702THz波段中的光生载流子的分布，其中颜色坐标中的数字代表的是以10为底的对数坐标。可以看出在光生载流子数量越多的情况下，对应的电场强度也越高。
由上述图片可知，在特定需求下，可以通过使用不同的铁电材料、设置不同的铁电畴的大小来改变器件对光的选择性吸收，并由此可推知，可通过集成各种大小不同的铁电使器件对某一个波段范围具有响应性。

Claims (4)

1.一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器，其特征在于：包括基底：如半导体硅(Si)或氧化物钛酸锶(STO)、底电极：如镧锶锰氧(LSMO)、铁电材料：如铁酸铋(BFO)或掺铪的氧化锆(HfZrO)、以及上层的二维材料：如石墨烯；所述底电极LSMO置于STO之上；所述铁电材料置于STO之上，二维材料之下；所述石墨烯为大面积单层的石墨烯，作为二维材料的实例；以调控光电探测器波段为目标的优化问题；将光电响应问题简化为石墨烯对不同波段的光的吸收问题。
2.按照权利要求1所述的一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器，其特征在于：所述基底、底电极、铁电材料不仅限于实例中所述材料，所述石墨烯是二维材料的一种实例，不仅限于石墨烯。
3.按照权利要求1所述的一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器，其特征在于：所述的以调控光电探测器波段为目标的优化问题，变量包括铁电畴对石墨烯电化学势的影响，以及铁电畴的形状和大小。
4.按照权利要求1所述的一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器，其特征在于：将光电效应简化为石墨烯对不同波段的光的吸收问题，通过仿真计算石墨烯对光的吸收率，得到器件对特定波段的光具有响应的性质。
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