CN114093977A - 一种低功耗可调谐室温中红外光电探测器及制作方法 - Google Patents
一种低功耗可调谐室温中红外光电探测器及制作方法 Download PDFInfo
- Publication number
- CN114093977A CN114093977A CN202111413076.3A CN202111413076A CN114093977A CN 114093977 A CN114093977 A CN 114093977A CN 202111413076 A CN202111413076 A CN 202111413076A CN 114093977 A CN114093977 A CN 114093977A
- Authority
- CN
- China
- Prior art keywords
- consumption
- power
- graphene
- low
- tunable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 19
- 230000000737 periodic effect Effects 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 230000010287 polarization Effects 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 3
- 229910000859 α-Fe Inorganic materials 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 2
- -1 lanthanum aluminate Chemical class 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 239000000523 sample Substances 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- YMVZSICZWDQCMV-UHFFFAOYSA-N [O-2].[Mn+2].[Sr+2].[La+3] Chemical compound [O-2].[Mn+2].[Sr+2].[La+3] YMVZSICZWDQCMV-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 3
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002075 lanthanum strontium manganite Inorganic materials 0.000 description 2
- PIRUAZLFEUQMTG-UHFFFAOYSA-N lanthanum;oxomanganese;strontium Chemical group [Sr].[La].[Mn]=O PIRUAZLFEUQMTG-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004476 mid-IR spectroscopy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
本发明属于红外光电探测器技术领域，尤其是一种低功耗可调谐室温中红外光电探测器及制作方法，包括源电极、漏电极、石墨烯、衬底、设于衬底上的底电极、设于底电极上的周期极化的铁电薄膜、导线；石墨烯与周期极化的铁电薄膜接触，源电极、漏电极与石墨烯接触，源电极、漏电极的顶部均设有接触电极，本发明无需对石墨烯图形化，避免了图形化石墨烯加工过程中对材料的损伤及不光滑边缘的产生，无需复杂接触电极的制备，简化了器件的制造工艺，降低了大规模生产的成本，采用功函数有差异的金属电极作为源漏接触电极，无需外加偏压，器件即可工作，大大降低了功耗，可在室温工作。
Description
技术领域
本发明涉及红外光电探测器技术领域，尤其涉及一种低功耗可调谐室温中红外光电探测器及制作方法。
背景技术
光电探测器，可将光信号转换为电信号，广泛应用于成像、通信、环境监测、材料鉴定、健康医疗、太空探索、国防安全等诸多领域。在紫外、可见光与近红外范围内，以GaN、硅、InGaAs探测器为为主的商业器件具有探测手段多、室温性能高、集成手段成熟、生产规模大等诸多优势；然而，在中红外波段，现有的商业化薄膜器件(如HgCdTe、GaSb/InAs、InSb、SiAs)表现出诸多弊端，主要包括薄膜生长与加工工艺复杂(外延生长难以兼容CMOS工艺)、价格昂贵、操作条件苛刻(工作温度低至液氮甚至液氦以下)、响应范围窄(受制于能带)等，这些缺陷与瓶颈极大地限制了其进一步应用，难以满足现有信息技术和社会生活高速发展的需求。
近年来，随着石墨烯研究的不断深入，因其独特的电学、光学性质，同时还具有极好的CMOS工艺兼容性，被认为是最具发展潜力的室温红外光电探测材料之一，且已有多个原型器件被证实，有望弥补传统薄膜光电探测材料的不足。然而，现有石墨烯中红外光电探测器的可调谐性能极大地依赖图形化石墨烯、复杂的金属电极阵列或外加电场来调控，这些器件制备工艺复杂、器件工作能耗高，极大地限制了其进一步应用。
发明内容
本发明的目的是为了解决石墨烯中红外光电探测器的可调谐性能极大地依赖图形化石墨烯、复杂的金属电极阵列或外加电场来调控，这些器件制备工艺复杂、器件工作能耗高，极大地限制了其进一步应用的缺点，而提出的一种低功耗可调谐室温中红外光电探测器及制作方法。
为了实现上述目的，本发明采用了如下技术方案：
一种低功耗可调谐室温中红外光电探测器，包括源电极、漏电极、石墨烯、衬底、设于衬底上的底电极、设于底电极上的周期极化的铁电薄膜、导线；石墨烯与周期极化的铁电薄膜接触，源电极、漏电极与石墨烯接触，源电极、漏电极的顶部均设有接触电极。
所述石墨烯为单层石墨烯；中红外光源波长为3-25μm；源漏电极为金属电极，金属电极为金、钛或钯电极；铁电薄膜为高质量在衬底上外延生长的铁电薄膜及其异质结构；铁电薄膜为铁酸铋BFO、锆钛酸铅PZT、钛酸钡BTO、铌酸锂LNO、钽铌酸钾KTN、钛酸铅PTO、或钽酸锶铋SBT；底电极为镧锶锰氧、钌酸锶BTO或镍酸镧LNO；衬底为钛酸锶STO或铝酸镧LAO；周期极化的图案为周期条带状或周期圆形状；源漏电极用导线与商用电流计相连；导线为铝线。
本发明还提出了一种低功耗可调谐室温中红外光电探测器的制作方法，包括以下步骤：
S1、将铁电薄膜进行周期极化翻转；
S2、转移石墨烯；
S3、沉积源/漏电极；
S4、焊接导线。
优选的，所述S1中，铁电薄膜小面积极化翻转可采用压电力显微镜的探针进行，大面积的铁电薄膜极化翻转采用水印法。
优选的，所述S2中，转移石墨烯的方法包括干法转移和湿法转移。
优选的，所述S3中，源/漏电极制作使用真空磁控溅射法。
优选的，所述S4中，导线焊接使用引线键合法。
与现有技术相比，本发明的优点在于：
本发明无需对石墨烯图形化，避免了图形化石墨烯加工过程中对材料的损伤及不光滑边缘的产生，无需复杂接触电极的制备，简化了器件的制造工艺，降低了大规模生产的成本，采用功函数有差异的金属电极作为源漏接触电极，无需外加偏压，器件即可工作，大大降低了功耗，可在室温工作。
附图说明
图1为本发明提出的一种低功耗可调谐室温中红外光电探测器的主视结构示意图；
图2为本发明提出的一种低功耗可调谐室温中红外光电探测器的俯视结构示意图；
图3为本发明提出的一种低功耗可调谐室温中红外光电探测器的周期极化的铁电薄膜俯视示意图。
图4为本发明提出的一种低功耗可调谐室温中红外光电探测器的均匀向下极化的铁电薄膜俯视示意图；
图5为本发明提出的一种低功耗可调谐室温中红外光电探测器的器件性能图。
图中：1、接触电极；2、源电极；3、漏电极；4、石墨烯；5、周期极化的铁电薄膜；6、底电极；7、衬底。
具体实施方式
下面将结合本实施例中的附图，对本实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本实施例一部分实施例，而不是全部的实施例。
一种低功耗可调谐室温中红外光电探测器的制作方法，包括以下步骤：
S1、选用铁电薄膜为铁酸铋BFO、底电极为镧锶锰氧LSMO、衬底为钛酸锶STO；
S2、BFO厚度为25nm；LSMO厚度为25nm，STO厚度为500μm；
S3、STO晶向为001；
S4、利用原子力显微镜对铁电薄膜进行周期极化，图案为周期条带状，极化方向为交替向上和向下极化，每根条带宽度为100nm，周期宽度为200nm，条带长度为10μm，图形阵列尺度为10μm×10μm；
S5、湿法转移单层石墨烯；
S6、沉积钛/钯金属电极，钛电极的厚度为20nm，钯电极的厚度为20nm；
S7、在钛/钯分别沉积金接触电极，金电极的厚度为100nm；
S8、使用引线键合法将源漏电极用铝导线连接，铝导线的直径为1μm；
最终结果：器件在零偏压，室温下，入射光波长为7.2μm时获得最高响应度17.86mA/W。
图3中，条带宽度(d)为100nm，周期宽度(P)为200nm，图案阵列长度(L)为10μm，图案阵列宽度(W)为10μm；
图4中，图案阵列长度(L)为10μm，图案阵列宽度(W)为10μm。
图5中，周期为200nm至5μm以及均匀极化图案对应的器件响应度。
对比方案1
利用原子力显微镜对铁电薄膜进行周期极化，图案为周期条带状，每根条带宽度为150nm，周期宽度为300nm，条带长度为10μm，图形阵列尺度为10μm×10μm；
最终结果：器件在零偏压，室温下，入射光波长为7.55μm时获得最高响应度19.46mA/W。
对比方案2
利用原子力显微镜对铁电薄膜进行周期极化，图案为周期条带状，每根条带宽度为250nm，周期宽度为500nm，条带长度为10μm，图形阵列尺度为10μm×10μm；
最终结果：器件在零偏压，室温下，入射光波长为7.72μm时获得最高响应度21.01mA/W。
对比方案3
利用原子力显微镜对铁电薄膜进行周期极化，图案为周期条带状，每根条带宽度为350nm，周期宽度为700nm，条带长度为10μm，图形阵列尺度为10μm×10μm；
最终结果：器件在零偏压，室温下，入射光波长为8.11μm时获得最高响应度24.09mA/W。
对比方案4
利用原子力显微镜对铁电薄膜进行周期极化，图案为周期条带状，每根条带宽度为400nm，周期宽度为800nm，条带长度为10μm，图形阵列尺度为10μm×10μm；
最终结果：器件在零偏压，室温下，入射光波长为8.33μm时获得最高响应度26.68mA/W。
对比方案5
利用原子力显微镜对铁电薄膜进行周期极化，图案为周期条带状，每根条带宽度为500nm，周期宽度为1000nm，条带长度为10μm，图形阵列尺度为10μm×10μm；
最终结果：器件在零偏压，室温下，入射光波长为8.45μm时获得最高响应度29.73mA/W。
对比方案6
利用原子力显微镜对铁电薄膜进行周期极化，图案为周期条带状，每根条带宽度为5μm，周期宽度为10μm，条带长度为10μm，图形阵列尺度为10μm×10μm；
最终结果：器件在零偏压，室温下，入射光波长为8.68-6.67μm时获得最高响应度0.85-1.74mA/W。
对比方案7
利用原子力显微镜对铁电薄膜进行周期极化，图案为正方形均匀向下极化，图形尺度为10μm×10μm；
最终结果：器件在零偏压，室温下，入射光波长为8.68-6.67μm时获得最高响应度0.91-1.48mA/W。
以上所述，仅为本实施例较佳的具体实施方式，但本实施例的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本实施例揭露的技术范围内，根据本实施例的技术方案及其发明构思加以等同替换或改变，都应涵盖在本实施例的保护范围之内。
Claims (10)
1.一种低功耗可调谐室温中红外光电探测器，包括源电极(2)、漏电极(3)、石墨烯(4)、衬底(7)、设于衬底(7)上的底电极(6)、设于底电极(6)上的周期极化的铁电薄膜(5)、导线；石墨烯(4)与周期极化的铁电薄膜(5)接触，源电极(2)、漏电极(3)与石墨烯(4)接触，源电极(2)、漏电极(3)的顶部均设有接触电极(1)。
2.根据权利要求1所述的一种低功耗可调谐室温中红外光电探测器，其特征在于，所述石墨烯(4)为单层石墨烯；源电极(2)、漏电极(3)为金属电极，金属电极为金、钛或钯电极。
3.根据权利要求1所述的一种低功耗可调谐室温中红外光电探测器，其特征在于，所述周期极化的铁电薄膜(5)为铁酸铋、锆钛酸铅、钛酸钡、铌酸锂、钽铌酸钾、钛酸铅或钽酸锶铋。
4.根据权利要求1所述的一种低功耗可调谐室温中红外光电探测器，其特征在于，所述底电极(6)为镧锶锰氧、钌酸锶或镍酸镧。
5.根据权利要求1所述的一种低功耗可调谐室温中红外光电探测器，其特征在于，所述衬底(7)为钛酸锶或铝酸镧，导线为铝线。
6.一种低功耗可调谐室温中红外光电探测器的制作方法，其特征在于，包括以下步骤：
S1、将铁电薄膜进行周期极化翻转；
S2、转移石墨烯；
S3、沉积源/漏电极；
S4、焊接导线。
7.根据权利要求6所述的一种低功耗可调谐室温中红外光电探测器的制作方法，其特征在于，所述S1中，铁电薄膜小面积极化翻转可采用压电力显微镜的探针进行，大面积的铁电薄膜极化翻转采用水印法。
8.根据权利要求6所述的一种低功耗可调谐室温中红外光电探测器的制作方法，其特征在于，所述S2中，转移石墨烯的方法包括干法转移和湿法转移。
9.根据权利要求6所述的一种低功耗可调谐室温中红外光电探测器的制作方法，其特征在于，所述S3中，源/漏电极制作使用真空磁控溅射法。
10.根据权利要求6所述的一种低功耗可调谐室温中红外光电探测器的制作方法，其特征在于，所述S4中，导线焊接使用引线键合法。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111413076.3A CN114093977A (zh) | 2021-11-25 | 2021-11-25 | 一种低功耗可调谐室温中红外光电探测器及制作方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111413076.3A CN114093977A (zh) | 2021-11-25 | 2021-11-25 | 一种低功耗可调谐室温中红外光电探测器及制作方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114093977A true CN114093977A (zh) | 2022-02-25 |
Family
ID=80304538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111413076.3A Pending CN114093977A (zh) | 2021-11-25 | 2021-11-25 | 一种低功耗可调谐室温中红外光电探测器及制作方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114093977A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114709280A (zh) * | 2022-03-28 | 2022-07-05 | 国家纳米科学中心 | 一种光电探测器及其制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060201415A1 (en) * | 2005-03-08 | 2006-09-14 | National University Of Singapore | Patterned ferroelectric thin films for microwave devices |
| WO2008083445A1 (en) * | 2007-01-12 | 2008-07-17 | The Australian National University | Optical analysis system and method |
| CN108389874A (zh) * | 2018-01-25 | 2018-08-10 | 电子科技大学 | 一种局域场增强型宽光谱高响应的光电探测器 |
| CN111370523A (zh) * | 2020-03-16 | 2020-07-03 | 电子科技大学 | 一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器 |
-
2021
- 2021-11-25 CN CN202111413076.3A patent/CN114093977A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060201415A1 (en) * | 2005-03-08 | 2006-09-14 | National University Of Singapore | Patterned ferroelectric thin films for microwave devices |
| WO2008083445A1 (en) * | 2007-01-12 | 2008-07-17 | The Australian National University | Optical analysis system and method |
| CN108389874A (zh) * | 2018-01-25 | 2018-08-10 | 电子科技大学 | 一种局域场增强型宽光谱高响应的光电探测器 |
| CN111370523A (zh) * | 2020-03-16 | 2020-07-03 | 电子科技大学 | 一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114709280A (zh) * | 2022-03-28 | 2022-07-05 | 国家纳米科学中心 | 一种光电探测器及其制备方法 |
| CN114709280B (zh) * | 2022-03-28 | 2024-05-24 | 国家纳米科学中心 | 一种光电探测器及其制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Huangfu et al. | Visible or near-infrared light self-powered photodetectors based on transparent ferroelectric ceramics | |
| Xu et al. | ZnO-based photodetector: from photon detector to pyro-phototronic effect enhanced detector | |
| Das et al. | Designing a lower band gap bulk ferroelectric material with a sizable polarization at room temperature | |
| Mondal et al. | Advanced pyroelectric materials for energy harvesting and sensing applications | |
| CN107342345A (zh) | 一种基于铁电栅介质和薄层二硫化钼沟道的光电晶体管 | |
| WO2015172585A1 (zh) | 一种热释电弛豫铁电红外探测器 | |
| US9548406B2 (en) | Photoelectric conversion element and method of manufacturing the same | |
| CN114093977A (zh) | 一种低功耗可调谐室温中红外光电探测器及制作方法 | |
| CN111370523B (zh) | 一种基于图形化铁电畴的石墨烯太赫兹波可调谐探测器 | |
| US20200126705A1 (en) | Oxide interface displaying electronically controllable ferromagnetism | |
| Chen et al. | High-performance self-powered visible-blind ultraviolet photodetection achieved by ferroelectric PbZr0. 52Ti0. 48O3 thin films | |
| Li et al. | Photovoltaic effect induced by self-polarization in BiFeO3 films | |
| You et al. | Manipulation of ferroelectric polarization and light absorption in non-noble metal/Aurivillius ferroelectric hybrid to enhance self-driven photodetection by coupling ferro-pyro-phototronic and plasmonic effect | |
| Yang et al. | Two-dimensional layered materials meet perovskite oxides: A combination for high-performance electronic devices | |
| CN113130676A (zh) | 焦平面红外探测器芯片、探测器和制备方法 | |
| Li et al. | Self-powered bipolar photodetector based on a Ce-BaTiO3 PTCR semiconductor for logic gates | |
| Liu et al. | Ferroelectric–optoelectronic hybrid system for photodetection | |
| Li et al. | Intercorrelated Ferroelectricity and Bulk Photovoltaic Effect in Two-Dimensional Sn2P2S6 Semiconductor for Polarization-Sensitive Photodetection | |
| CN104218116A (zh) | 基于超材料的远红外单谱信号探测器及其制备方法 | |
| US9503656B2 (en) | Solid state imaging device and image acquisition method using solid state imaging elements having a PN junction | |
| Yu et al. | Progress in Advanced Infrared Optoelectronic Sensors | |
| Qiu et al. | Ferroelectricity-Driven Self-Powered Weak Temperature and Broadband Light Detection in MoS2/CuInP2S6/WSe2 van der Waals Heterojunction Nanoarchitectonics | |
| KR20180069607A (ko) | 광전 소자 및 그 제조 방법 | |
| CN102544221A (zh) | 一种基于宝石衬底的宽波段薄膜型光电探测器的制备方法 | |
| Li et al. | Recent Application and Progress of Metal Halide Perovskite Photodetector on Flexible Substrates |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |