CN114300569A - 一种双波段可调谐室温红外光电探测器 - Google Patents
一种双波段可调谐室温红外光电探测器 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 32
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 10
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 7
- 229910000859 α-Fe Inorganic materials 0.000 claims description 7
- YMVZSICZWDQCMV-UHFFFAOYSA-N [O-2].[Mn+2].[Sr+2].[La+3] Chemical compound [O-2].[Mn+2].[Sr+2].[La+3] YMVZSICZWDQCMV-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- -1 graphite alkene Chemical class 0.000 claims description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 238000005411 Van der Waals force Methods 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 description 11
- 230000010287 polarization Effects 0.000 description 8
- 230000000737 periodic effect Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- PIRUAZLFEUQMTG-UHFFFAOYSA-N lanthanum;oxomanganese;strontium Chemical group [Sr].[La].[Mn]=O PIRUAZLFEUQMTG-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
本发明公开了一种双波段可调谐室温红外光电探测器,包括导线、源/漏电极、石墨烯、衬底、底电极薄膜和铁电薄膜,所述源/漏电极的顶部为接触金属电极;所述石墨烯与铁电薄膜接触,并且接收被检测的红外光信号;所述源/漏电极与石墨烯接触,并且收集石墨烯接收红外光信号后产生的正负电荷,且通过连接导线形成源/漏电流,本发明涉及红外光电探测器技术领域。该双波段可调谐室温红外光电探测器,使用石墨烯,可与基底以范德华力接触,无需考虑晶格匹配问题,无需复杂的外延生长工艺,大大降低了生产成本,本发明无需对石墨烯图形化,避免了石墨烯加工过程中对材料的损伤及不光滑边缘的产生,简化了加工流程。
Description
技术领域
本发明涉及红外光电探测器技术领域,具体为一种双波段可调谐室温红外光电探测器。
背景技术
多频谱光电探测系统可以从复杂场景中区分绝对温度和特征信号的能力,还能够通过信号处理算法提高灵敏度,广泛应用于预警、遥感和航空航天等领域,特别地,双波段光电探测器可以屏蔽杂散信息,例如红外区域的背景干扰,然而,现有的多波段红外探测所使用的成像系统冗杂,在空间对准、尺寸缩小和功耗等方面仍面临着诸多挑战,尽管基于HgCdTe的量子阱探测器等替代设备能够使用顺序和同步模式感应中红外波段的光,但它们依赖于昂贵而复杂的生长方法(分子束外延、液相外延和金属有机化学气相沉积),且不可避免地面临极为严苛冷却需求。
最近,新兴的二维材料被用于光电领域,包括显示电极、激光器、光调制器、光伏和等离激元器件,在诸多基于二维材料的光电子器件中,基于石墨烯的等离激元光电探测器因其独特的特性而得到了极大的发展,首先,无带隙的石墨烯使电荷载流子能够产生超宽光谱,可从紫外线延伸到太赫兹频率,第二,石墨烯通过静电掺杂等方式改变载流子行为,第三,可动态调谐的石墨烯表面等离激元的激发能量比贵金属低得多,效率也比贵金属高,第四,因其可以范德华力与任何基底接触,无需复杂的空间对准和昂贵的生长技术,第五,不需要传统多频谱红外系统的冷却设备,基于石墨烯表面等离激元的红外探测器在常温下即可工作,然而,目前所报道的石墨烯等离激元的红外测器的通常基于图形化的石墨烯阵列,其不可避免地受到无序的边缘影响,降低了器件的性能,尽管已经开发出将贵金属等离激元纳米结构与石墨烯集成的替代方法,但通过改变纳米结构的几何形状或施加的栅极电压,它只能在可见光和近红外范围(0.3~3μm)内实现可调谐的选择性滤光和探测。
此外,目前所报道的石墨烯等离激元光电探测器主要关注单波段可调谐性,且面临着高能耗和复杂的图形化工艺等限制,与实际工业要求不相符合。
发明内容
(一)解决的技术问题
针对现有技术的不足,本发明提供了一种双波段可调谐室温红外光电探测器,解决了上述背景技术中所提出的问题。
(二)技术方案
为实现以上目的,本发明通过以下技术方案予以实现:一种双波段可调谐室温红外光电探测器,包括导线、源/漏电极、石墨烯、衬底、底电极薄膜和铁电薄膜,所述源/漏电极的顶部为接触金属电极;
所述石墨烯与铁电薄膜接触,并且接收被检测的红外光信号;
所述源/漏电极与石墨烯接触,并且收集石墨烯接收红外光信号后产生的正负电荷,且通过连接导线形成源/漏电流。
优选的,所述石墨烯为单层石墨烯,所述红外光源波长为5~50μm,所述源/漏电极为金属电极,并且优选金、钛、钯、镍金属电极,所述导线为金属掉线,并且优选直径为1μm的金、铝导线,所述铁电薄膜为高质量在衬底上外延生长的铁电薄膜及其异质结构。
优选的,所述铁电薄膜为铁酸铋、锆钛酸铅、钛酸钡、铌酸锂、钽铌酸钾、钛酸铅、或钽酸锶铋,并且铁电薄膜的厚度为25nm。
优选的,所述底电极薄膜为镧锶锰氧、钌酸锶或镍酸镧,并且底电极薄膜厚度为25nm,所述衬底为钛酸锶或铝酸镧,所述衬底的厚度为500μm,并且周期极化的铁电薄膜图案为圆环状
优选的,所述底电极薄膜为形成在衬底上的底电极薄膜,所述铁电薄膜为形成在底电极上的周期极化的铁电薄膜铁电薄膜。
(三)有益效果
本发明提供了一种双波段可调谐室温红外光电探测器具备以下有益效果:
(1)、该双波段可调谐室温红外光电探测器,使用石墨烯,可与基底以范德华力接触,无需考虑晶格匹配问题,无需复杂的外延生长工艺,大大降低了生产成本。
(2)、该双波段可调谐室温红外光电探测器,本发明无需对石墨烯图形化,避免了石墨烯加工过程中对材料的损伤及不光滑边缘的产生,简化了加工流程。
(3)、该双波段可调谐室温红外光电探测器,本发明无需复杂纳米金属阵列的制备,简化了器件的制造工艺,降低了大规模生产的成本。
(4)、该双波段可调谐室温红外光电探测器,本发明可采用功函数有差异的金属电极作为源/漏接触电极,可实现零偏压室温探测,大大降低了器件的功耗和制造成本。
(5)、该双波段可调谐室温红外光电探测器,无需对准设备,原位实现可调谐红外探测,避免了复杂的加工工艺。
附图说明
图1为本发明中结构的主视图;
图2为本发明中结构的俯视图
图3为本发明中周期极化的圆环状铁电薄膜俯视示意图;
图4为本发明中周期为200nm,内外圆半径分别为20nm和30nm的器件费米能级与光响应的共振峰位置关系图;
图5为本发明中周期为200nm,石墨烯费米能级为0.54eV,内、外圆半径之比为2:3的器件外圆半径与光响应的共振峰位置关系图;
图6为本发明中周期为200nm,石墨烯费米能级为0.54eV,外圆半径为60nm,器件内圆半径与与光响应的共振峰位置关系图;
图7为本发明中石墨烯费米能级为0.54eV,内、外圆半径比为2:3,外圆与周期为3:10的器件周期与光响应的共振峰位置关系图;
图8为本发明中器件光响应度与共振峰位置关系图。
图中,1-源/漏电极、2-石墨烯、3-衬底、4-底电极薄膜、5-铁电薄膜。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例一(请参阅图4)
(1)、选用铁电薄膜为铁酸铋(BFO)、底电极为镧锶锰氧(LSMO)、衬底为钛酸锶(STO);
(2)、BFO厚度为25nm;LSMO厚度为25nm,STO厚度为500μm;
(3)、将铁电薄膜进行周期极化,图案为周期环状,内圆半径为20nm,外圆半径为30nm,周期为200nm,极化向下的铁电畴所掺杂的石墨烯费米能级为0.1~0.7eV,可实现6.1~14.4μm和25.1~44.9μm两个波段的可调谐探测。
实施例二(请参阅图5)
(1)、选用铁电薄膜为铁酸铋(BFO)、底电极为镧锶锰氧(LSMO)、衬底为钛酸锶(STO);
(2)、BFO厚度为25nm;LSMO厚度为25nm,STO厚度为500μm;
(3)、将铁电薄膜进行周期极化,图案为周期环状,内圆半径与外圆半径之比为2:3,外圆半径为15~90nm,周期为200nm,极化向下的铁电畴所掺杂的石墨烯费米能级为0.54eV,可实现9.9~16.3μm和20.8~35.2μm两个波段的可调谐探测。
实施例三(请参阅图6)
(1)、选用铁电薄膜为铁酸铋(BFO)、底电极为镧锶锰氧(LSMO)、衬底为钛酸锶(STO);
(2)、BFO厚度为25nm;LSMO厚度为25nm,STO厚度为500μm;
(3)、将铁电薄膜进行周期极化,图案为周期环状,外圆半径为60nm,内圆半径为10~50nm,周期为200nm,极化向下的铁电畴所掺杂的石墨烯费米能级为0.54eV,可实现5.4~8.8μm和17.3~39.7μm两个波段的可调谐探测。
实施例四(请参阅图7)
(1)、选用铁电薄膜为铁酸铋(BFO)、底电极为镧锶锰氧(LSMO)、衬底为钛酸锶(STO);
(2)、BFO厚度为25nm;LSMO厚度为25nm,STO厚度为500μm;
(3)、将铁电薄膜进行周期极化,图案为周期环状,内圆半径与外圆半径的比例为2:3,外圆半径与周期之比为3:10,周期为50~800nm,极化向下的铁电畴所掺杂的石墨烯费米能级为0.54eV,可实现3.7~13.6μm和15.1~52.1μm两个波段的可调谐探测。
实施例五(请参阅图8)
(1)、选用铁电薄膜为铁酸铋(BFO)、底电极为镧锶锰氧(LSMO)、衬底为钛酸锶(STO);
(2)、BFO厚度为25nm;LSMO厚度为25nm,STO厚度为500μm;
(3)、将铁电薄膜进行周期极化,图案为周期环状,内圆半径为40nm,外圆半径为60nm,周期为200nm,极化向下的铁电畴所掺杂的石墨烯费米能级为0.54eV;
(4)、进一步地,通过计算器件的探测性能,理论上在5~50μm范围内的响应度可达到667~1080A/W。
工作原理
本发明通过调整周期极化铁电畴的圆环状图案与铁电畴极化场大小,以实现器件在5~50μm范围内的双波段可调谐探测,周期极化铁电畴的周期为,外圆与内圆的半径比为,外圆外径为,内圆半径为,通过铁电畴极化场大小调节的石墨烯费米能级为0.1~0.7eV。
需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (5)
1.一种双波段可调谐室温红外光电探测器,包括导线、源/漏电极(1)、石墨烯(2)、衬底(3)、底电极薄膜(4)和铁电薄膜(5),其特征在于:所述源/漏电极(1)的顶部为接触金属电极;
所述石墨烯(2)与铁电薄膜(5)接触,并且接收被检测的红外光信号;
所述源/漏电极(1)与石墨烯(2)接触,并且收集石墨烯(2)接收红外光信号后产生的正负电荷,且通过连接导线形成源/漏电流。
2.根据权利要求1所述的一种双波段可调谐室温红外光电探测器,其特征在于:所述石墨烯(2)为单层石墨烯,所述红外光源波长为5~50μm,所述源/漏电极(1)为金属电极,并且优选金、钛、钯、镍金属电极,所述导线为金属掉线,并且优选直径为1μm的金、铝导线,所述铁电薄膜(5)为高质量在衬底(3)上外延生长的铁电薄膜(5)及其异质结构。
3.根据权利要求1所述的一种双波段可调谐室温红外光电探测器,其特征在于:所述铁电薄膜(5)为铁酸铋(BFO)、锆钛酸铅(PZT)、钛酸钡(BTO)、铌酸锂(LNO)、钽铌酸钾(KTN)、钛酸铅(PTO)或钽酸锶铋(SBT),并且铁电薄膜(5)的厚度为25nm。
4.根据权利要求1所述的一种双波段可调谐室温红外光电探测器,其特征在于:所述底电极薄膜(4)为镧锶锰氧、钌酸锶(BTO)或镍酸镧(LNO),并且底电极薄膜(4)厚度为25nm,所述衬底(3)为钛酸锶(STO)或铝酸镧(LAO),所述衬底(3)的厚度为500μm,并且周期极化的铁电薄膜(5)图案为圆环状。
5.根据权利要求1所述的一种双波段可调谐室温红外光电探测器,其特征在于:所述底电极薄膜(4)为形成在衬底(3)上的底电极薄膜(4),所述铁电薄膜(5)为形成在底电极上的周期极化的铁电薄膜铁电薄膜(5)。
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