JP7398968B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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JP7398968B2
JP7398968B2 JP2020006880A JP2020006880A JP7398968B2 JP 7398968 B2 JP7398968 B2 JP 7398968B2 JP 2020006880 A JP2020006880 A JP 2020006880A JP 2020006880 A JP2020006880 A JP 2020006880A JP 7398968 B2 JP7398968 B2 JP 7398968B2
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semiconductor device
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semiconductor layer
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JP2021114548A (ja
JP2021114548A5 (https=
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年輝 彦坂
純平 田島
真也 布上
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Toshiba Corp
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Toshiba Corp
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Priority to US17/015,378 priority patent/US11581407B2/en
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Publication of JP2021114548A5 publication Critical patent/JP2021114548A5/ja
Priority to US17/985,538 priority patent/US11817483B2/en
Priority to JP2023023566A priority patent/JP7506207B2/ja
Priority to US18/471,372 priority patent/US12094934B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2020006880A 2020-01-20 2020-01-20 半導体装置及びその製造方法 Active JP7398968B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020006880A JP7398968B2 (ja) 2020-01-20 2020-01-20 半導体装置及びその製造方法
US17/015,378 US11581407B2 (en) 2020-01-20 2020-09-09 Semiconductor device and method for manufacturing the same
US17/985,538 US11817483B2 (en) 2020-01-20 2022-11-11 Semiconductor device and method for manufacturing the same
JP2023023566A JP7506207B2 (ja) 2020-01-20 2023-02-17 半導体装置及びその製造方法
US18/471,372 US12094934B2 (en) 2020-01-20 2023-09-21 Semiconductor device and method for manufacturing the same

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JP2020006880A JP7398968B2 (ja) 2020-01-20 2020-01-20 半導体装置及びその製造方法

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JP2021114548A5 JP2021114548A5 (https=) 2022-04-13
JP7398968B2 true JP7398968B2 (ja) 2023-12-15

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7398968B2 (ja) * 2020-01-20 2023-12-15 株式会社東芝 半導体装置及びその製造方法
JP7164827B1 (ja) 2021-07-09 2022-11-02 ダイキン工業株式会社 通信アダプタ
JP7698510B2 (ja) * 2021-08-16 2025-06-25 株式会社東芝 窒化物半導体、半導体装置及び窒化物半導体の製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311913A (ja) 2003-04-02 2004-11-04 Sumitomo Electric Ind Ltd 窒化物系半導体エピタキシャル基板、その製造方法、及びｈｅｍｔ用基板
JP2005235935A (ja) 2004-02-18 2005-09-02 Furukawa Electric Co Ltd:The 高電子移動度トランジスタ
JP2007251144A (ja) 2006-02-20 2007-09-27 Furukawa Electric Co Ltd:The 半導体素子
JP2012033575A (ja) 2010-07-28 2012-02-16 Sumitomo Electric Ind Ltd 半導体装置
JP2012099706A (ja) 2010-11-04 2012-05-24 Panasonic Corp 窒化物半導体装置
JP2014179546A (ja) 2013-03-15 2014-09-25 Renesas Electronics Corp 半導体装置
WO2016039177A1 (ja) 2014-09-09 2016-03-17 シャープ株式会社 窒化物半導体積層体の製造方法および窒化物半導体積層体
JP2016213507A (ja) 2016-09-07 2016-12-15 富士通株式会社 化合物半導体装置
WO2019098193A1 (ja) 2017-11-20 2019-05-23 ローム株式会社 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408413B2 (ja) 1998-03-06 2003-05-19 松下電器産業株式会社 半導体の製造方法及び半導体装置
JP5325534B2 (ja) 2008-10-29 2013-10-23 株式会社東芝 窒化物半導体素子
US8330167B2 (en) 2008-11-26 2012-12-11 Furukawa Electric Co., Ltd GaN-based field effect transistor and method of manufacturing the same
CN102754226B (zh) 2010-04-28 2015-07-15 松下电器产业株式会社 氮化物系半导体元件及其制造方法
JP2015115371A (ja) 2013-12-09 2015-06-22 古河電気工業株式会社 窒化物半導体装置およびその製造方法、並びに電界効果トランジスタおよびダイオード
JP6462456B2 (ja) 2015-03-31 2019-01-30 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP2018041878A (ja) 2016-09-08 2018-03-15 富士電機株式会社 半導体装置の製造方法および半導体装置
JP2018121001A (ja) 2017-01-27 2018-08-02 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP7398968B2 (ja) * 2020-01-20 2023-12-15 株式会社東芝 半導体装置及びその製造方法
JP7261196B2 (ja) * 2020-04-06 2023-04-19 株式会社東芝 半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004311913A (ja) 2003-04-02 2004-11-04 Sumitomo Electric Ind Ltd 窒化物系半導体エピタキシャル基板、その製造方法、及びｈｅｍｔ用基板
JP2005235935A (ja) 2004-02-18 2005-09-02 Furukawa Electric Co Ltd:The 高電子移動度トランジスタ
JP2007251144A (ja) 2006-02-20 2007-09-27 Furukawa Electric Co Ltd:The 半導体素子
JP2012033575A (ja) 2010-07-28 2012-02-16 Sumitomo Electric Ind Ltd 半導体装置
JP2012099706A (ja) 2010-11-04 2012-05-24 Panasonic Corp 窒化物半導体装置
JP2014179546A (ja) 2013-03-15 2014-09-25 Renesas Electronics Corp 半導体装置
WO2016039177A1 (ja) 2014-09-09 2016-03-17 シャープ株式会社 窒化物半導体積層体の製造方法および窒化物半導体積層体
JP2016213507A (ja) 2016-09-07 2016-12-15 富士通株式会社 化合物半導体装置
WO2019098193A1 (ja) 2017-11-20 2019-05-23 ローム株式会社 半導体装置

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JP2021114548A (ja) 2021-08-05
JP2023056037A (ja) 2023-04-18
JP7506207B2 (ja) 2024-06-25
US11817483B2 (en) 2023-11-14
US12094934B2 (en) 2024-09-17
US11581407B2 (en) 2023-02-14
US20240014273A1 (en) 2024-01-11
US20230073529A1 (en) 2023-03-09
US20210226016A1 (en) 2021-07-22

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