JP7391949B2 - 表示装置およびその製造方法 - Google Patents
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- JP7391949B2 JP7391949B2 JP2021515222A JP2021515222A JP7391949B2 JP 7391949 B2 JP7391949 B2 JP 7391949B2 JP 2021515222 A JP2021515222 A JP 2021515222A JP 2021515222 A JP2021515222 A JP 2021515222A JP 7391949 B2 JP7391949 B2 JP 7391949B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95053—Bonding environment
- H01L2224/95085—Bonding environment being a liquid, e.g. for fluidic self-assembly
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
Description
Claims (12)
- 第1方向に延びる第1領域と、前記第1方向に延びて前記第1領域から前記第1方向と交差する第2方向に配列された第2領域を含み、
前記第1領域上に隣接して配置される複数の第1発光素子および前記第2領域上に隣接して配置される複数の第2発光素子と、
前記第1領域上で前記第1発光素子の一端と連結されて前記第1方向に延びる少なくとも一つの第1配線と、
前記第2領域上で前記第2発光素子の一端と連結されて前記第1方向に延びる少なくとも一つの第2配線とを含み、
少なくとも一部が前記第1領域の一側から前記第2領域の他側まで前記第2方向に延びる第3配線をさらに含み、
前記第1配線と前記第2配線は電気的に分離され、
前記第1配線は、前記第1領域の一側から前記第1領域の他側まで前記第2方向に延びる第1配線幹部、および前記第1配線幹部から分岐して前記第1領域上で前記第1方向に延びる第1配線枝部を含み、
前記第2配線は、前記第2領域の一側から前記第2領域の他側まで前記第2方向に延びる第2配線幹部、および前記第2配線幹部から分岐して前記第2領域上で前記第1方向に延びる第2配線枝部を含み、
前記第3配線は、前記第2方向に延びる第3配線幹部、および前記第3配線幹部から分枝して設けられ、少なくとも一部が前記第1領域および前記第2領域上で前記第1方向に延び、互いに離隔して配置された複数の第3配線枝部を含み、
前記複数の第3配線枝部は、前記第1領域と前記第2領域とに互いに配置され、
前記第3配線枝部の各々は、前記第3配線幹部と前記第1方向において間隔をあけて配置される、表示装置。 - 前記第3配線枝部は、前記第1領域上で前記第1発光素子の他端と連結されて前記第2領域上で前記第2発光素子の他端と連結される、請求項1に記載の表示装置。
- 前記第2方向に延びる表示領域と、
前記第2方向に延び、前記表示領域の前記第1方向の両側に位置する非表示領域を含み、
前記第1配線幹部、前記第2配線幹部および前記第3配線幹部は、前記非表示領域上に配置される、請求項1に記載の表示装置。 - 前記非表示領域は、
前記表示領域の一側に位置した第1非表示領域と、
前記表示領域の他側に位置した第2非表示領域とを含む、請求項3に記載の表示装置。 - 前記第1配線は前記第1非表示領域に配置される前記第1配線幹部および前記第2非表示領域に配置される第1サブ配線幹部を含み、
前記第2配線は前記第1非表示領域に配置される前記第2配線幹部および前記第2非表示領域に配置される第2サブ配線幹部を含み、
前記第3配線は前記第1非表示領域に配置される前記第3配線幹部および前記第2非表示領域に配置される第3サブ配線幹部を含む、請求項4に記載の表示装置。 - 前記第3配線枝部は一端が前記第3配線幹部と離隔して終止し、他端が前記第3サブ配線幹部と離隔して終止し、
前記第1配線枝部は両端がそれぞれ前記第1配線幹部および前記第1サブ配線幹部と連結され、
前記第2配線枝部は両端がそれぞれ前記第2配線幹部および前記第2サブ配線幹部と連結される、請求項5に記載の表示装置。 - 前記第1配線、前記第2配線および前記第3配線を含む第1配線層と、
前記第1配線層上に位置し、前記第1配線幹部と前記第1配線枝部を連結する第1ブリッジ配線および前記第2配線幹部と前記第2配線枝部を連結する第2ブリッジ配線を含む第2配線層をさらに含む、請求項3に記載の表示装置。 - 前記第1方向に延びて前記第2領域の他側に位置する第3領域をさらに含み、
前記第1領域の前記一側から前記第1方向に延びて前記第3領域の他側まで延びる第4配線幹部および前記第4配線幹部から分枝され、前記第3領域に配置される第4配線枝部を含む第4配線を含み、
前記第4配線は前記第1配線および前記第2配線と電気的に分離された、請求項2に記載の表示装置。 - 前記第3配線幹部は前記第1領域の一側から前記第1方向に延びて前記第3領域の他側まで延び、
前記第3配線枝部は前記第3配線幹部から分枝されて前記第3領域上にも配置される、請求項8に記載の表示装置。 - 前記第3領域で一端が前記第3配線枝部と連結され、他端が前記第4配線枝部と連結される第3発光素子をさらに含む、請求項9に記載の表示装置。
- 少なくとも一つの接地配線および前記接地配線と離隔して対向する整列配線を含む下部基板を準備する段階と、
前記下部基板上の少なくとも一部に発光素子を含む塗布性溶液を塗布し、前記整列配線に交流電源を印加して前記接地配線と前記整列配線の間に前記発光素子を整列する段階とを含み、
前記下部基板は第1方向に延びる第1領域と、前記第1方向に延び、前記第1領域から前記第1方向と交差する第2方向に配列された第2領域を含み、
前記整列配線は前記第1領域に配置される第1整列配線および前記第2領域に配置される第2整列配線を含み、
前記接地配線は、
前記第1領域で前記第1整列配線と対向して離隔する第1接地配線と、
前記第2領域で前記第2整列配線と対向して離隔する第2接地配線を含み、
前記発光素子は、
前記第1整列配線および前記第1接地配線の間に整列される第1発光素子と、
前記第2整列配線および前記第2接地配線の間に整列される第2発光素子とを含み、
前記発光素子を整列する段階は、
第1時点で前記塗布性溶液を前記第1領域の少なくとも一部に塗布し、前記交流電源を前記第1整列配線に印加して前記第1整列配線と前記第1接地配線の間に前記発光素子を整列する段階と、
前記第1時点と異なる第2時点で前記塗布性溶液を前記第2領域の少なくとも一部に塗布し、前記交流電源を前記第2整列配線に印加して前記第2整列配線と前記第2接地配線の間に前記発光素子を整列する段階とを含み、
前記第1時点で、
前記第1整列配線に印加される前記交流電源は前記第1整列配線および前記第1接地配線の間に第1電場を形成し、
前記第1発光素子は一端が第1整列配線に連結され、他端が前記第1接地配線に連結され、
前記第2時点で、
前記第1電場が除去され、
前記第2整列配線に印加される前記交流電源は前記第2整列配線および前記第2接地配線の間に前記第1電場と実質的に同じ強度の第2電場を形成し、
前記第2発光素子は一端が前記第2整列配線に連結され、他端が前記第2接地配線に連結され、
前記第1時点および前記第2時点と異なる第3時点で、
前記第2電場は除去され、前記第1接地配線および前記第2接地配線は部分的にパターニングされて少なくとも一つの断片を形成する、表示装置の製造方法。 - 前記塗布性溶液は前記第1領域の一側から前記第2領域の他側まで順次塗布される、請求項11に記載の表示装置の製造方法。
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