JP7391793B2 - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 206
- 238000012545 processing Methods 0.000 title claims description 86
- 238000003672 processing method Methods 0.000 title claims description 9
- 230000003068 static effect Effects 0.000 claims description 174
- 230000008030 elimination Effects 0.000 claims description 111
- 238000003379 elimination reaction Methods 0.000 claims description 111
- 239000007788 liquid Substances 0.000 claims description 73
- 239000012530 fluid Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 59
- 230000005611 electricity Effects 0.000 claims description 49
- 239000004020 conductor Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- 238000011084 recovery Methods 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910001868 water Inorganic materials 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Description
200 処理容器
340 支持ユニット
360 昇降ユニット
380 上部流体供給ユニット
390 下部流体供給ユニット
392 カバー
394 固定シャフト
396 液吐出管
398 ガス吐出管
399 ベアリング
400 除電ユニット
410 除電プレート
430 除電ピン
500 制御器
Claims (15)
- 基板を処理する装置において、
基板を支持し、支持板を含む支持ユニットと、
前記支持ユニットに支持された基板の下部に流体を供給する下部流体供給ユニットと、
前記支持ユニットに支持された基板を除電する除電ユニットと、
制御器と、を含み、
前記除電ユニットは、
前記支持ユニットに支持された基板の下面と離隔されるように提供される除電プレートと、
前記支持板に提供され、前記除電プレートを前記支持板から離隔させる除電ピンと、を含み、
前記制御器は、
前記基板の下部に前記流体を供給して前記基板の下面と前記除電プレートとの間の空間に液膜を形成するように前記下部流体供給ユニットを制御する基板処理装置。 - 前記除電ピンは、前記除電プレートと電気的に連結され、接地される請求項1に記載の基板処理装置。
- 前記除電ピンは、前記支持板と電気的に連結され、前記支持板は、接地される請求項2に記載の基板処理装置。
- 前記除電プレートは、前記除電ピンの上端に結合される請求項2に記載の基板処理装置。
- 前記除電プレートは、
上部から見る時、リング形状を有する請求項1に記載の基板処理装置。 - 前記除電プレートは、
上部から見る時、一部が切断されて曲がったリング形状を有する請求項5に記載の基板処理装置。 - 前記除電プレートは、前記支持ユニットに支持された基板の縁領域に配置される請求項1乃至請求項6のいずれかの一項に記載の基板処理装置。
- 前記支持ユニットは、
前記支持板に提供され、基板の側部を支持するチョクピンを含み、
前記除電プレートは、
前記チョクピンの間に配置される請求項1乃至請求項6のいずれかの一項に記載の基板処理装置。 - 前記チョクピンは、
上部から見る時、前記支持板に円周方向に沿って配置し、
前記除電プレートは、前記円周方向に沿って配置される前記チョクピンの間に配置される請求項8に記載の基板処理装置。 - 前記除電プレートは、導電性素材を含む材質で提供される請求項1乃至請求項6のいずれかの一項に記載の基板処理装置。
- 基板を処理する方法において、
前記基板の下面と離隔されるように提供される除電プレートの間の空間に流体を供給して液膜を形成し、
前記液膜が前記基板と前記除電プレートを電気的に連結して前記基板を除電し、
前記除電プレートは、支持板を含む支持ユニットに支持された基板の下面と離隔されるように提供され、
前記除電プレートは、前記支持板に提供された除電ピンによって前記支持板から離隔される
基板処理方法。 - 前記除電プレートが上部から見る時、前記基板の縁領域に配置されて前記基板の縁領域を除電する請求項11に記載の基板処理方法。
- 基板を処理する装置において、
基板を支持し、支持板を含む支持ユニットと、
前記支持ユニットに支持された基板が処理される処理空間を有する処理容器と、
前記支持ユニットに支持された基板の下部に流体を供給する下部流体供給ユニットと、
前記支持ユニットに支持された基板の上面に処理液を供給する上部流体供給ユニットと、
前記支持ユニットに支持された基板を除電する除電ユニットと、
制御器と、を含み、
前記除電ユニットは、
前記支持ユニットに支持された基板の下面と離隔されるように提供され、接地される除電プレートと、
前記支持板に提供され、前記除電プレートを前記支持板から離隔させる除電ピンと、を含み、
前記制御器は、
前記基板の下部に前記流体を供給して前記基板の下面と前記除電プレートとの間の空間に液膜を形成するように前記下部流体供給ユニットを制御する基板処理装置。 - 前記除電ピンは、前記除電プレートと電気的に連結され、接地される請求項13に記載の基板処理装置。
- 前記除電ピンは、前記支持板と電気的に連結され、前記支持板は接地される請求項14に記載の基板処理装置。
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CN114156227B (zh) * | 2022-02-10 | 2022-07-08 | 上海隐冠半导体技术有限公司 | 夹持装置 |
CN115413100B (zh) * | 2022-10-27 | 2023-03-14 | 江油星联电子科技有限公司 | 一种电路板除静电装置 |
CN117174646B (zh) * | 2023-11-03 | 2024-03-12 | 南通莱欧电子科技有限公司 | 一种半导体生产用静电消除设备 |
Citations (5)
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JP2005123534A (ja) | 2003-10-20 | 2005-05-12 | Electroplating Eng Of Japan Co | ウェハ洗浄装置 |
JP2007012887A (ja) | 2005-06-30 | 2007-01-18 | Dainippon Screen Mfg Co Ltd | 基板処理方法、基板処理装置および周囲部材の除電方法 |
JP2007184363A (ja) | 2006-01-05 | 2007-07-19 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板除電方法 |
JP2011103438A (ja) | 2009-10-16 | 2011-05-26 | Tokyo Electron Ltd | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体 |
JP2017183389A (ja) | 2016-03-29 | 2017-10-05 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
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JP2891951B2 (ja) * | 1996-12-06 | 1999-05-17 | 鹿児島日本電気株式会社 | フォトレジスト現像装置 |
KR20150010144A (ko) * | 2013-07-18 | 2015-01-28 | 엘지디스플레이 주식회사 | 기판 지지 장치 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123534A (ja) | 2003-10-20 | 2005-05-12 | Electroplating Eng Of Japan Co | ウェハ洗浄装置 |
JP2007012887A (ja) | 2005-06-30 | 2007-01-18 | Dainippon Screen Mfg Co Ltd | 基板処理方法、基板処理装置および周囲部材の除電方法 |
JP2007184363A (ja) | 2006-01-05 | 2007-07-19 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板除電方法 |
JP2011103438A (ja) | 2009-10-16 | 2011-05-26 | Tokyo Electron Ltd | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体 |
JP2017183389A (ja) | 2016-03-29 | 2017-10-05 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
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