JP7391296B2 - 成膜方法 - Google Patents

成膜方法 Download PDF

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Publication number
JP7391296B2
JP7391296B2 JP2017196465A JP2017196465A JP7391296B2 JP 7391296 B2 JP7391296 B2 JP 7391296B2 JP 2017196465 A JP2017196465 A JP 2017196465A JP 2017196465 A JP2017196465 A JP 2017196465A JP 7391296 B2 JP7391296 B2 JP 7391296B2
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Japan
Prior art keywords
film
film forming
substrate
raw material
group
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JP2017196465A
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Japanese (ja)
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JP2019070180A (ja
JP2019070180A5 (enExample
Inventor
慎悟 柳生
貴博 佐々木
宜朗 渡辺
孝 四戸
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Flosfia Inc
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Flosfia Inc
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Priority to JP2017196465A priority Critical patent/JP7391296B2/ja
Priority to CN201811147185.3A priority patent/CN109628910B/zh
Priority to US16/151,461 priority patent/US10927458B2/en
Publication of JP2019070180A publication Critical patent/JP2019070180A/ja
Publication of JP2019070180A5 publication Critical patent/JP2019070180A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
JP2017196465A 2017-10-07 2017-10-07 成膜方法 Active JP7391296B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017196465A JP7391296B2 (ja) 2017-10-07 2017-10-07 成膜方法
CN201811147185.3A CN109628910B (zh) 2017-10-07 2018-09-29 形成膜的方法
US16/151,461 US10927458B2 (en) 2017-10-07 2018-10-04 Method of forming film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017196465A JP7391296B2 (ja) 2017-10-07 2017-10-07 成膜方法

Publications (3)

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JP2019070180A JP2019070180A (ja) 2019-05-09
JP2019070180A5 JP2019070180A5 (enExample) 2020-12-03
JP7391296B2 true JP7391296B2 (ja) 2023-12-05

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013543659A (ja) 2010-10-01 2013-12-05 アプライド マテリアルズ インコーポレイテッド 薄膜トランジスタ用途に用いられる砒化ガリウムに基づく材料
US20150105234A1 (en) 2012-06-18 2015-04-16 University Of Florida Research Foundation, Inc. Tungsten nitrido precursors for the cvd of tungsten nitride, carbonitride, and oxide films
WO2017106587A1 (en) 2015-12-18 2017-06-22 Dow Corning Corporation Tris(disilanyl)amine
WO2017110953A1 (ja) 2015-12-24 2017-06-29 株式会社Flosfia 成膜方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4427714A (en) * 1981-01-16 1984-01-24 Pa Management Consultants Limited Thin films of compounds and alloy compounds of Group III and Group V elements
US4975299A (en) * 1989-11-02 1990-12-04 Eastman Kodak Company Vapor deposition process for depositing an organo-metallic compound layer on a substrate
JP2014043640A (ja) * 2012-07-31 2014-03-13 Tosoh Corp ケイ素含有薄膜の製造方法及びケイ素含有薄膜

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013543659A (ja) 2010-10-01 2013-12-05 アプライド マテリアルズ インコーポレイテッド 薄膜トランジスタ用途に用いられる砒化ガリウムに基づく材料
US20150105234A1 (en) 2012-06-18 2015-04-16 University Of Florida Research Foundation, Inc. Tungsten nitrido precursors for the cvd of tungsten nitride, carbonitride, and oxide films
WO2017106587A1 (en) 2015-12-18 2017-06-22 Dow Corning Corporation Tris(disilanyl)amine
WO2017110953A1 (ja) 2015-12-24 2017-06-29 株式会社Flosfia 成膜方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
岡田拓也ほか，ミストデポジション法を用いたポリイミド系水平配向膜の成膜基礎条件の検討，２０１７年日本液晶学会討論会予稿集，２０１７年０９月

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