JP7390619B2 - 原子拡散接合法及び接合構造体 - Google Patents
原子拡散接合法及び接合構造体 Download PDFInfo
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- JP7390619B2 JP7390619B2 JP2020095730A JP2020095730A JP7390619B2 JP 7390619 B2 JP7390619 B2 JP 7390619B2 JP 2020095730 A JP2020095730 A JP 2020095730A JP 2020095730 A JP2020095730 A JP 2020095730A JP 7390619 B2 JP7390619 B2 JP 7390619B2
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- bonding
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- atomic diffusion
- bonding film
- nitride
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Description
真空容器内において,平滑面を有する2つの基体それぞれの前記平滑面に窒化物から成る接合膜を形成すると共に,前記2つの基体に形成された前記接合膜同士が接触するように前記2つの基体を重ね合わせることにより,前記接合膜の接合界面に原子拡散を生じさせて前記2つの基体を接合することを特徴とする(請求項1)。
真空容器内において,一方の基体の平滑面に窒化物から成る接合膜を形成すると共に,少なくとも表面に窒化物の薄膜を有する平滑面を備えた他方の基体の前記平滑面に,前記一方の基体に形成された前記接合膜が接触するように前記一方,他方の2つの基体を重ね合わせることにより,前記接合膜と前記他方の基体の前記平滑面との接合界面に原子拡散を生じさせることにより前記2つの基体を接合することを特徴とする(請求項2)。
真空容器内において,一方の基体の平滑面に窒化物から成る接合膜を形成すると共に,活性化処理した平滑面を備えた他方の基体の前記平滑面に,前記一方の基体に形成された前記接合膜が接触するように前記一方,他方の2つの基体を重ね合わせることにより,前記接合膜と前記他方の基体の前記平滑面との接合界面に原子拡散を生じさせることにより前記2つの基体を接合することを特徴とする(請求項3)。
第1基体と,
前記第1基体と対向配置された第2基体と,
前記第1基体と前記第2基体との間に設けられ,前記第1基体に積層された窒化物から成る第1接合膜と,前記第2基体に積層された窒化物から成る第2接合膜で構成された中間層を備え,
前記中間層が前記第1接合膜と前記第2接合膜間に原子拡散が生じた界面を有することを特徴とする(請求項13)。
第1基体と,
前記第1基体と対向配置された第2基体と,
前記第1基体と前記第2基体との間に設けられ,前記第1基体に積層(ただし,前記第1基体との間に原子拡散を生じた積層を除く)された窒化物から成る接合膜で構成された中間層を備え,
前記中間層と前記第2基体間に原子拡散が生じた界面を有することを特徴とする(請求項14)。
これらの界面は,前記原子拡散に伴う原子再配列を生じた界面とすることができる(請求項15)。
本発明の原子拡散接合法では,真空容器内においてスパッタリングやイオンプレーティング等の真空製膜により形成した窒化物の薄膜を接合膜として原子拡散接合を行うもので,接合対象とする2つの基体それぞれの平滑面上に形成された窒化物の接合膜同士を重ね合わせることにより,又は,
接合対象とする一方の基体の平滑面上に形成された窒化物の接合膜を,少なくとも表面が窒化物の薄膜が形成された他方の基体の平滑面に重ね合わせることにより,更には,
接合対象とする一方の基体の平滑面上に形成された窒化物の接合膜を,活性化処理した平滑面を備えた他方の基体の平滑面に重ね合わせることにより,接合界面において原子拡散を生じさせて,両基体の接合を行うものである。
(1)材質
本発明の原子拡散接合法による接合対象とする基体としては,スパッタリングやイオンプレーティング等,一例として到達真空度が1×10-3~1×10-8Pa,好ましくは1×10-4~1×10-8Paの高真空度である真空容器を用いた高真空度雰囲気における真空成膜により前述した窒化物の接合膜を形成可能な材質であれば如何なるものも対象とすることができ,各種の純金属,合金の他,Si基板,SiO2基板等の半導体,ガラス,セラミックス,樹脂,酸化物,窒化物等であって前記方法による真空成膜が可能なものであれば本発明における基体(被接合材)とすることができる。
基体の形状は特に限定されず,例えば平板状のものから各種の複雑な立体形状のもの迄,その用途,目的に応じて各種の形状のものを対象とすることができるが,他方の基体との接合が行われる部分(接合面)については所定の精度で平滑に形成された平滑面を備えていることが必要である。
(1)材質
(1-1) 材質一般
窒素とそれより陽性の元素は,希ガスや一部の白金族元素を除いてほとんどすべての元素が窒化物を形成することが知られており,これらの窒化物中,真空中及び大気中で安定に存在する窒化物であれば,その材質に限定はなく,本発明の原子拡散接合で使用する接合膜の材質とすることができる。
前述した窒化物の一方である,第13および第14族元素を含む窒化物としては,周期律表における周期2~5の第13族及び第14族の元素(B,Al,Ga,In,C,Si,Ge,Sn)より選択された1つ以上の元素を含む窒化物を挙げることができ,例えばこれらの元素と窒素(N)の化合物を挙げることができ,BN,AlN,Si3N4等の窒化物がこれに該当する。
前述した窒化物の他方である遷移金属を含む窒化物として,周期率表の周期4の第3~12属の元素(Sc,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Zn),第5及び6周期の第3~6属の元素〔Y,Zr,Nb,Mo,ランタノイド(La,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Td,Dy,Ho,Er,Tm,Yb,Lu),Hf,Ta,W〕より選択された,1つ以上の元素を含む窒化物を挙げることができ,これらの元素と窒素(N)の化合物であるTiN,CrN,MnN,Fe3N等がこれに該当する。
接合膜を形成する元素の組成は,膜厚方向あるいは面内方向に一様な構造であっても良く,または,膜厚方向あるいは面内方向で変化させた組成変調膜であっても良く,更には多層構造であっても良い。
接合する接合膜同士の界面や,接合膜と他方の基体の表面との界面間における強固な接合を得るためには,接合界面において一定以上の範囲で原子が拡散する必要がある。
接合膜の成膜方法は,真空中で基体の平滑面に接合膜として窒化物の薄膜を形成することができる真空成膜法であれば特に限定されず,既知の各種の方法で成膜可能である。
接合膜の形成時に真空容器内に不純物として存在する酸素や水,炭素などの不純物ガスは,形成する窒化物薄膜の内部に取り込まれて,接合膜の物性を劣化させる。
接合膜を構成する窒化物の物性を持たせるために,最低でも格子定数と同程度の膜厚が必要で,0.3nm以上の膜厚が必要である。
なお,本発明の原子拡散接合法では,接合する一方の基体の平滑面にのみ接合膜を形成し,他方の基体の平滑面は,表面を活性化して,これに接合膜が形成された一方の基体の平滑面を重ね合わせることによっても接合することもできる。
(1-1) 試験方法
前述した窒化物のうち,第13族元素の窒化物により形成した接合膜による接合試験例として,AlN薄膜を使用して本発明の原子拡散接合法による接合を行った。
γ=3/8×Et3y2/L4
ここで,Eはウエハのヤング率,tはウエハの厚さ,yはブレードの厚さの1/2である。
(1-2-1) 接合強度の測定結果
上記接合試験中,石英ウエハ(Sa=0.16nm)同士を接合して得たサンプルの接合強度(接合界面の自由エネルギー)γを測定した結果を図1(A)に,AlN薄膜の膜厚の変化に対する表面粗さSaの変化を図1(B)にそれぞれ示す。
図3(A)に,片側あたりの膜厚5nmのAlN薄膜を接合膜としてSiウエハ(Sa=0.14nm)同士を接合した非加熱のサンプルの断面TEM写真を示す。
以上の結果から,従来,原子拡散接合に使用することができないと考えられていた窒化物の接合膜を使用した場合であっても,室温において原子拡散を伴った強固な接合を行うことができることが確認された。
(2-1) 試験方法
前述した窒化物のうち,第13族元素の窒化物であるBN薄膜を使用して本発明の原子拡散接合法による接合を行った。
各サンプルの表面粗さSaと接合強度γを測定した結果を,表4に示す。
BN薄膜の表面粗さSaは,膜厚が0.3,0.5,1,2nmにおいて0.13nmであったが,膜厚が5nmでは0.15nmに僅かに増加した。
(3-1) 試験方法
前述した窒化物のうち,第14族元素の窒化物であるSi3N4薄膜を使用して本発明の原子拡散接合法による接合を行った。
各サンプルの接合強度γを測定した結果を,表5に示す。
AlN薄膜を接合膜とした試験例と同様に,Si3N4薄膜を接合膜とした接合試験においても,石英ウエハ,Siウエハのいずれ共に接合を行うことができることが確認された。
(4-1) 試験方法
前述した窒化物のうち,遷移金属の窒化物(侵入型窒化物)により形成した接合膜を使用した接合試験例として,TaN薄膜を接合膜として使用した接合を行った。
表面粗さSaと接合強度γの測定結果を表6に示す。
TaNは膜では,膜厚の増加にともなう表面粗さSaの増加は小さく,膜厚30nmでも0.16nmに留まっており,膜厚が50nmでも0.19nmであった。
(5-1) 試験方法
前述した遷移金属の窒化物(侵入型窒化物)により形成した接合膜を使用した接合試験例として,更に、TiN薄膜を接合膜として使用した接合を行った。
表面粗さSaと接合強度γの測定結果を表7に示す。
TiN薄膜では,接合後,非加熱の接合強度γは,膜厚1nmでは0.44J/m2であったが,膜厚2nmでは0.09J/m2に低下した。
Claims (17)
- 真空容器内において,平滑面を有する2つの基体それぞれの前記平滑面に窒化物から成る接合膜を形成すると共に,前記2つの基体に形成された前記接合膜同士が接触するように前記2つの基体を重ね合わせることにより,前記接合膜の接合界面に原子拡散を生じさせて前記2つの基体を接合することを特徴とする原子拡散接合法。
- 真空容器内において,一方の基体の平滑面に窒化物から成る接合膜を形成すると共に,少なくとも表面に窒化物の薄膜を有する平滑面を備えた他方の基体の前記平滑面に,前記一方の基体に形成された前記接合膜が接触するように前記一方,他方の2つの基体を重ね合わせることにより,前記接合膜と前記他方の基体の前記平滑面との接合界面に原子拡散を生じさせることにより前記2つの基体を接合することを特徴とする原子拡散接合法。
- 真空容器内において,一方の基体の平滑面に窒化物から成る接合膜を形成すると共に,活性化処理した平滑面を備えた他方の基体の前記平滑面に,前記一方の基体に形成された前記接合膜が接触するように前記一方,他方の2つの基体を重ね合わせることにより,前記接合膜と前記他方の基体の前記平滑面との接合界面に原子拡散を生じさせることにより前記2つの基体を接合することを特徴とする原子拡散接合法。
- 前記接合界面に原子拡散に伴う原子再配列を生じさせることを特徴とする請求項1~3いずれか1項記載の原子拡散接合法。
- 前記接合膜の表面の算術平均粗さを0.5nm以下としたことを特徴とする請求項1~4いずれか1項記載の原子拡散接合法。
- 前記基体の重ね合わせを,前記基体を加熱することなく行うことを特徴とする請求項1~5いずれか1項記載の原子拡散接合法。
- 前記基体を重ね合わせる際の前記基体の温度を,室温以上400℃以下の範囲で加熱して原子拡散を促進させることを特徴とする請求項1~5いずれか1項記載の原子拡散接合法。
- 前記接合膜の形成及び/又は前記基体の重ね合わせを,到達真空圧力が1×10-3Pa~1×10-8Paの真空容器内で行うことを特徴とする請求項1~7いずれか1項記載の原子拡散接合法。
- 前記接合膜の形成と,前記基体の重ね合わせを同一真空中で行うことを特徴とする請求項1~8いずれか1項記載の原子拡散接合法。
- 前記接合膜を,周期律表の周期2~5で第13および14族元素群より選択された1つ以上の元素を含む窒化物により形成することを特徴とする請求項1~9いずれか1項記載の原子拡散接合法。
- 前記接合膜を,周期率表の周期4で第3~12属元素群,及び,周期5~6で第3~6属元素群より選択された1つ以上の元素を含む窒化物により形成することを特徴とする請求項1~9いずれか1項記載の原子拡散接合法。
- 前記接合膜の膜厚を0.3nm~5μmとしたことを特徴とする請求項1~11いずれか1項記載の原子拡散接合法。
- 第1基体と,
前記第1基体と対向配置された第2基体と,
前記第1基体と前記第2基体との間に設けられ,前記第1基体に積層された窒化物から成る第1接合膜と,前記第2基体に積層された窒化物から成る第2接合膜で構成された中間層を備え,
前記中間層の前記第1接合膜と前記第2接合膜間に原子拡散が生じた界面を有することを特徴とする接合構造体。 - 第1基体と,
前記第1基体と対向配置された第2基体と,
前記第1基体と前記第2基体との間に設けられ,前記第1基体に積層(ただし,前記第1基体との間に原子拡散を生じた積層を除く)された窒化物から成る接合膜で構成された中間層を備え,
前記中間層と前記第2基体間に原子拡散が生じた界面を有することを特徴とする接合構造体。 - 前記界面は,前記原子拡散に伴う原子再配列を生じた界面であることを特徴とする請求項13又は14記載の接合構造体。
- 上記接合構造体の前記中間層の厚みを,0.3nm~10μmとしたことを特徴とする請求項13~15いずれか1項記載の接合構造体。
- 前記中間層の窒化物を構成する材料が,前記第1基体あるいは前記第2基体を構成する材料と異なることを特徴とする請求項13~16いずれか1項記載の接合構造体。
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JP2016087664A (ja) | 2014-11-06 | 2016-05-23 | 株式会社ムサシノエンジニアリング | 原子拡散接合方法及び前記方法により接合された構造体 |
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JP2021186837A (ja) | 2021-12-13 |
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KR20230017201A (ko) | 2023-02-03 |
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