JP7388545B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP7388545B2 JP7388545B2 JP2022516571A JP2022516571A JP7388545B2 JP 7388545 B2 JP7388545 B2 JP 7388545B2 JP 2022516571 A JP2022516571 A JP 2022516571A JP 2022516571 A JP2022516571 A JP 2022516571A JP 7388545 B2 JP7388545 B2 JP 7388545B2
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- 239000004065 semiconductor Substances 0.000 title claims description 187
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 238000005530 etching Methods 0.000 claims description 204
- 238000000034 method Methods 0.000 claims description 77
- 229910002704 AlGaN Inorganic materials 0.000 claims description 65
- 230000004888 barrier function Effects 0.000 claims description 32
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000059 patterning Methods 0.000 claims description 15
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 6
- 230000008569 process Effects 0.000 description 27
- 238000001312 dry etching Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
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- 150000004767 nitrides Chemical class 0.000 description 4
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- 125000002524 organometallic group Chemical group 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2020/017454 WO2021214933A1 (fr) | 2020-04-23 | 2020-04-23 | Procédé de production d'un dispositif semiconducteur |
Publications (2)
Publication Number | Publication Date |
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JPWO2021214933A1 JPWO2021214933A1 (fr) | 2021-10-28 |
JP7388545B2 true JP7388545B2 (ja) | 2023-11-29 |
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Application Number | Title | Priority Date | Filing Date |
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JP2022516571A Active JP7388545B2 (ja) | 2020-04-23 | 2020-04-23 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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JP (1) | JP7388545B2 (fr) |
WO (1) | WO2021214933A1 (fr) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006339561A (ja) | 2005-06-06 | 2006-12-14 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ及びその製造方法 |
JP2012156321A (ja) | 2011-01-26 | 2012-08-16 | Toshiba Corp | 窒化物半導体装置及びその製造方法 |
JP2012231081A (ja) | 2011-04-27 | 2012-11-22 | Sharp Corp | 半導体装置の製造方法 |
JP2013225621A (ja) | 2012-04-23 | 2013-10-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2014090033A (ja) | 2012-10-29 | 2014-05-15 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP2015165530A (ja) | 2014-03-03 | 2015-09-17 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4368963B2 (ja) * | 1999-03-03 | 2009-11-18 | 株式会社日立製作所 | 化合物半導体材料のエッチング方法 |
JP4316454B2 (ja) * | 2004-09-10 | 2009-08-19 | 株式会社東芝 | 半導体基板、半導体素子、半導体素子の製造方法及び半導体基板の製造方法 |
JP5827529B2 (ja) * | 2011-09-15 | 2015-12-02 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
-
2020
- 2020-04-23 JP JP2022516571A patent/JP7388545B2/ja active Active
- 2020-04-23 WO PCT/JP2020/017454 patent/WO2021214933A1/fr active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006339561A (ja) | 2005-06-06 | 2006-12-14 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ及びその製造方法 |
JP2012156321A (ja) | 2011-01-26 | 2012-08-16 | Toshiba Corp | 窒化物半導体装置及びその製造方法 |
JP2012231081A (ja) | 2011-04-27 | 2012-11-22 | Sharp Corp | 半導体装置の製造方法 |
JP2013225621A (ja) | 2012-04-23 | 2013-10-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2014090033A (ja) | 2012-10-29 | 2014-05-15 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP2015165530A (ja) | 2014-03-03 | 2015-09-17 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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Publication number | Publication date |
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JPWO2021214933A1 (fr) | 2021-10-28 |
WO2021214933A1 (fr) | 2021-10-28 |
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