JP7370449B2 - 基板処理装置、及び基板処理方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Description
2 保持部
4 第1液供給部(液供給部)
5 回収部
6 循環路
7 ガス供給部
9 制御部
W 基板
Wa 第1主面
Wb 第2主面
Claims (10)
- 基板を保持する保持部と、
前記保持部に保持された前記基板の第1主面に対して、処理液を供給する液供給部と、
前記基板の処理に使用した使用済みの前記処理液を回収する回収部と、
前記回収部によって回収した前記処理液を前記液供給部に戻す循環路と、
前記保持部に保持された前記基板の前記第1主面とは反対向きの第2主面に対してガスを供給するガス供給部と、
前記液供給部、及び前記ガス供給部を制御する制御部とを、備え、
前記制御部は、前記循環路によって前記液供給部に戻す予定の前記処理液を前記第1主面に対して供給する際に、前記ガスを前記第2主面に対して供給し、
前記基板の前記第1主面に形成された、前記循環路によって前記液供給部に戻す予定の前記処理液の液膜の温度を測定するセンサを備え、
前記ガス供給部は、前記ガスの温度を調節する温調機構を含み、
前記制御部は、前記センサによって測定した前記液膜の温度に基づき前記温調機構によって前記ガスの温度を調節し、調節した温度の前記ガスを前記基板の前記第2主面に対して供給する、基板処理装置。 - 前記制御部は、前記センサによって前記液膜の温度を複数点で測定し、前記液膜の温度幅が閾値以上である場合に前記温調機構によって前記ガスの温度を調節し、調節した温度の前記ガスを前記基板の前記第2主面に対して供給する、請求項1に記載の基板処理装置。
- 前記保持部に保持された前記基板の前記第2主面に対して、第2処理液を供給する第2液供給部を備え、
前記制御部は、前記循環路によって前記液供給部に戻す予定の前記処理液を前記第1主面に対して供給する際に、前記第2処理液を前記第2主面に対して供給することを禁止し、
前記禁止する前記第2処理液は、前記循環路によって前記液供給部に戻す予定の前記処理液とは異なるものである、請求項1又は2に記載の基板処理装置。 - 前記ガス供給部は、前記保持部に保持された前記基板の前記第2主面の周縁部に向けて前記ガスを吐出するノズルを含む、請求項1~3のいずれか1項に記載の基板処理装置。
- 前記ノズルは、前記保持部に保持された前記基板の周縁に沿って、円環状に配置されるか、円弧状に複数配置されるか、点状に複数配置される、請求項4に記載の基板処理装置。
- 前記ノズルは、前記保持部に保持された前記基板の前記第2主面に対して垂直又は斜めに前記ガスを吐出する、請求項4又は5に記載の基板処理装置。
- 前記ノズルは、前記保持部に保持された前記基板の前記第2主面に対して平行に、且つ前記基板の径方向外方に向けて、前記ガスを吐出する、請求項4又は5に記載の基板処理装置。
- 基板の第1主面に対して処理液を供給することと、前記基板の処理に使用した使用済みの前記処理液を回収することと、回収した前記処理液を別の前記基板の処理に再利用することと、を有する、基板処理方法であって、
再利用する予定の前記処理液を前記基板の前記第1主面に対して供給する際に、前記基板の前記第1主面とは反対向きの第2主面に対してガスを供給することと、
前記基板の前記第1主面に形成された、前記再利用する予定の前記処理液の液膜の温度を測定することと、
前記ガスを前記基板の前記第2主面に対して供給する際に、前記測定した前記液膜の温度に基づき前記ガスの温度を調節することと、を有する、基板処理方法。 - 前記液膜の温度を測定することは、前記液膜の温度を複数点で測定することを含み、
前記ガスの温度を調節することは、前記液膜の温度幅が閾値以上である場合に実施される、請求項8に記載の基板処理方法。 - 前記再利用する予定の前記処理液とは異なる第2処理液を前記基板の前記第2主面に対して供給することと、
前記再利用する予定の前記処理液を前記基板の前記第1主面に対して供給する際に、前記第2処理液を前記基板の前記第2主面に対して供給することを禁止することと、を有する、請求項8又は9に記載の基板処理方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020029483 | 2020-02-25 | ||
JP2020029483 | 2020-02-25 | ||
PCT/JP2021/005413 WO2021172064A1 (ja) | 2020-02-25 | 2021-02-15 | 基板処理装置、及び基板処理方法 |
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JPWO2021172064A1 JPWO2021172064A1 (ja) | 2021-09-02 |
JP7370449B2 true JP7370449B2 (ja) | 2023-10-27 |
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JP2022503267A Active JP7370449B2 (ja) | 2020-02-25 | 2021-02-15 | 基板処理装置、及び基板処理方法 |
Country Status (6)
Country | Link |
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US (1) | US20230079190A1 (ja) |
JP (1) | JP7370449B2 (ja) |
KR (1) | KR20220145359A (ja) |
CN (1) | CN115136282A (ja) |
TW (1) | TW202200273A (ja) |
WO (1) | WO2021172064A1 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005217226A (ja) | 2004-01-30 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 半導体基板の洗浄方法及び洗浄装置 |
JP2007335826A (ja) | 2006-02-07 | 2007-12-27 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2012064760A (ja) | 2010-09-16 | 2012-03-29 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2015115409A (ja) | 2013-12-10 | 2015-06-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2018056293A (ja) | 2016-09-28 | 2018-04-05 | 東京エレクトロン株式会社 | 基板処理装置および処理液供給方法 |
JP2018517293A (ja) | 2015-05-14 | 2018-06-28 | エーシーエム リサーチ (シャンハイ) インコーポレーテッド | 基板のベベルおよび裏面を保護するための装置 |
JP2020004996A (ja) | 2019-09-05 | 2020-01-09 | 東京エレクトロン株式会社 | 液処理方法、基板処理装置、及び記憶媒体 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0864568A (ja) * | 1994-08-23 | 1996-03-08 | Toshiba Corp | ウェーハ洗浄装置 |
JP5156661B2 (ja) | 2009-02-12 | 2013-03-06 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
-
2021
- 2021-02-15 US US17/801,911 patent/US20230079190A1/en active Pending
- 2021-02-15 CN CN202180015032.7A patent/CN115136282A/zh active Pending
- 2021-02-15 WO PCT/JP2021/005413 patent/WO2021172064A1/ja active Application Filing
- 2021-02-15 KR KR1020227032277A patent/KR20220145359A/ko active Search and Examination
- 2021-02-15 JP JP2022503267A patent/JP7370449B2/ja active Active
- 2021-02-17 TW TW110105242A patent/TW202200273A/zh unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005217226A (ja) | 2004-01-30 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 半導体基板の洗浄方法及び洗浄装置 |
JP2007335826A (ja) | 2006-02-07 | 2007-12-27 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2012064760A (ja) | 2010-09-16 | 2012-03-29 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2015115409A (ja) | 2013-12-10 | 2015-06-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2018517293A (ja) | 2015-05-14 | 2018-06-28 | エーシーエム リサーチ (シャンハイ) インコーポレーテッド | 基板のベベルおよび裏面を保護するための装置 |
JP2018056293A (ja) | 2016-09-28 | 2018-04-05 | 東京エレクトロン株式会社 | 基板処理装置および処理液供給方法 |
JP2020004996A (ja) | 2019-09-05 | 2020-01-09 | 東京エレクトロン株式会社 | 液処理方法、基板処理装置、及び記憶媒体 |
Also Published As
Publication number | Publication date |
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CN115136282A (zh) | 2022-09-30 |
TW202200273A (zh) | 2022-01-01 |
US20230079190A1 (en) | 2023-03-16 |
KR20220145359A (ko) | 2022-10-28 |
WO2021172064A1 (ja) | 2021-09-02 |
JPWO2021172064A1 (ja) | 2021-09-02 |
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