JP7364557B2 - 低寄生キャパシタンス低雑音増幅器 - Google Patents

低寄生キャパシタンス低雑音増幅器 Download PDF

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JP7364557B2
JP7364557B2 JP2020516404A JP2020516404A JP7364557B2 JP 7364557 B2 JP7364557 B2 JP 7364557B2 JP 2020516404 A JP2020516404 A JP 2020516404A JP 2020516404 A JP2020516404 A JP 2020516404A JP 7364557 B2 JP7364557 B2 JP 7364557B2
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contact
layer
transistor
drain
source
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JP2020535697A (ja
JP2020535697A5 (enExample
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シナン・ゴクテペリ
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0064—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with separate antennas for the more than one band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication
    • H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
    • H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B15/00—Suppression or limitation of noise or interference
    • H04B15/005—Reducing noise, e.g. humm, from the supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Transceivers (AREA)
JP2020516404A 2017-09-27 2018-08-27 低寄生キャパシタンス低雑音増幅器 Active JP7364557B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762564155P 2017-09-27 2017-09-27
US62/564,155 2017-09-27
US15/976,710 US10439565B2 (en) 2017-09-27 2018-05-10 Low parasitic capacitance low noise amplifier
US15/976,710 2018-05-10
PCT/US2018/048128 WO2019067130A1 (en) 2017-09-27 2018-08-27 LOW NOISE AMPLIFIER WITH LOW PARASITE CAPACITY

Publications (3)

Publication Number Publication Date
JP2020535697A JP2020535697A (ja) 2020-12-03
JP2020535697A5 JP2020535697A5 (enExample) 2021-09-24
JP7364557B2 true JP7364557B2 (ja) 2023-10-18

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ID=65809274

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Application Number Title Priority Date Filing Date
JP2020516404A Active JP7364557B2 (ja) 2017-09-27 2018-08-27 低寄生キャパシタンス低雑音増幅器

Country Status (8)

Country Link
US (1) US10439565B2 (enExample)
EP (1) EP3688806A1 (enExample)
JP (1) JP7364557B2 (enExample)
KR (1) KR102605453B1 (enExample)
CN (1) CN111164757A (enExample)
BR (1) BR112020005696B1 (enExample)
CA (1) CA3073501C (enExample)
WO (1) WO2019067130A1 (enExample)

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* Cited by examiner, † Cited by third party
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US11239325B2 (en) * 2020-04-28 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having backside via and method of fabricating thereof
US11450600B2 (en) 2020-05-12 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including decoupling capacitors
DE102020122823B4 (de) 2020-05-12 2022-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtungen mit entkopplungskondensatoren
US11626494B2 (en) 2020-06-17 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial backside contact
JP7542338B2 (ja) * 2020-07-02 2024-08-30 株式会社東芝 電子回路、電流計測装置、電圧計測装置、電力変換器、およびインバータ
US11355487B2 (en) * 2020-07-20 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Layout designs of integrated circuits having backside routing tracks
JP2022025995A (ja) * 2020-07-30 2022-02-10 株式会社東芝 半導体装置
US11393831B2 (en) 2020-07-31 2022-07-19 Taiwan Semiconductor Manufacturing Company Limited Optimized static random access memory
US11437379B2 (en) 2020-09-18 2022-09-06 Qualcomm Incorporated Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits
US11404374B2 (en) 2020-09-30 2022-08-02 Qualcomm Incorporated Circuits employing a back side-front side connection structure for coupling back side routing to front side routing, and related complementary metal oxide semiconductor (CMOS) circuits and methods
US12218664B2 (en) 2020-10-21 2025-02-04 Arm Limited Backside power supply techniques
US12266601B2 (en) * 2021-03-30 2025-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with backside contact
US20220352256A1 (en) * 2021-04-28 2022-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Backside memory integration
US12224286B2 (en) 2021-09-22 2025-02-11 Qualcomm Incorporated Symmetric dual-sided MOS IC
CN116032221A (zh) * 2023-03-29 2023-04-28 成都明夷电子科技有限公司 一种低噪声共源共栅放大器及微波系统
US20250185292A1 (en) * 2023-12-04 2025-06-05 International Business Machines Corporation Extra gate device integration with semiconductor device

Citations (4)

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US20070296002A1 (en) 2006-06-27 2007-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Backside contacts for MOS devices
JP2014513417A (ja) 2011-03-30 2014-05-29 クアルコム，インコーポレイテッド ダイオード、それを使用する回路、および製造方法
US20150357477A1 (en) 2014-06-06 2015-12-10 Stmicroelectronics, Inc. Backside source-drain contact for integrated circuit transistor devices and method of making same
US20180061766A1 (en) 2016-08-26 2018-03-01 Qualcomm Incorporated Semiconductor devices on two sides of an isolation layer

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US9219129B2 (en) 2012-05-10 2015-12-22 International Business Machines Corporation Inverted thin channel mosfet with self-aligned expanded source/drain
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CN104241357A (zh) * 2013-06-18 2014-12-24 中芯国际集成电路制造(上海)有限公司 一种晶体管、集成电路以及集成电路的制造方法
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US20070296002A1 (en) 2006-06-27 2007-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Backside contacts for MOS devices
JP2014513417A (ja) 2011-03-30 2014-05-29 クアルコム，インコーポレイテッド ダイオード、それを使用する回路、および製造方法
US20150357477A1 (en) 2014-06-06 2015-12-10 Stmicroelectronics, Inc. Backside source-drain contact for integrated circuit transistor devices and method of making same
US20180061766A1 (en) 2016-08-26 2018-03-01 Qualcomm Incorporated Semiconductor devices on two sides of an isolation layer

Also Published As

Publication number Publication date
EP3688806A1 (en) 2020-08-05
KR102605453B1 (ko) 2023-11-22
CN111164757A (zh) 2020-05-15
JP2020535697A (ja) 2020-12-03
US20190097592A1 (en) 2019-03-28
CA3073501C (en) 2024-11-12
BR112020005696B1 (pt) 2023-11-21
CA3073501A1 (en) 2019-04-04
WO2019067130A1 (en) 2019-04-04
KR20200060380A (ko) 2020-05-29
BR112020005696A2 (pt) 2020-10-20
US10439565B2 (en) 2019-10-08

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