BR112020005696B1 - Dispositivo amplificador de baixo ruído (lna) e método para construir um dispositivo amplificador de baixo ruído - Google Patents

Dispositivo amplificador de baixo ruído (lna) e método para construir um dispositivo amplificador de baixo ruído Download PDF

Info

Publication number
BR112020005696B1
BR112020005696B1 BR112020005696-0A BR112020005696A BR112020005696B1 BR 112020005696 B1 BR112020005696 B1 BR 112020005696B1 BR 112020005696 A BR112020005696 A BR 112020005696A BR 112020005696 B1 BR112020005696 B1 BR 112020005696B1
Authority
BR
Brazil
Prior art keywords
contact
layer
lna
transistor
drain
Prior art date
Application number
BR112020005696-0A
Other languages
English (en)
Portuguese (pt)
Other versions
BR112020005696A2 (pt
Inventor
Sinan Goktepeli
Original Assignee
Qualcomm Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Incorporated filed Critical Qualcomm Incorporated
Publication of BR112020005696A2 publication Critical patent/BR112020005696A2/pt
Publication of BR112020005696B1 publication Critical patent/BR112020005696B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0064—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with separate antennas for the more than one band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication
    • H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
    • H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B15/00—Suppression or limitation of noise or interference
    • H04B15/005—Reducing noise, e.g. humm, from the supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Transceivers (AREA)
BR112020005696-0A 2017-09-27 2018-08-27 Dispositivo amplificador de baixo ruído (lna) e método para construir um dispositivo amplificador de baixo ruído BR112020005696B1 (pt)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762564155P 2017-09-27 2017-09-27
US62/564,155 2017-09-27
US15/976,710 2018-05-10
US15/976,710 US10439565B2 (en) 2017-09-27 2018-05-10 Low parasitic capacitance low noise amplifier
PCT/US2018/048128 WO2019067130A1 (en) 2017-09-27 2018-08-27 LOW NOISE AMPLIFIER WITH LOW PARASITE CAPACITY

Publications (2)

Publication Number Publication Date
BR112020005696A2 BR112020005696A2 (pt) 2020-10-20
BR112020005696B1 true BR112020005696B1 (pt) 2023-11-21

Family

ID=65809274

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112020005696-0A BR112020005696B1 (pt) 2017-09-27 2018-08-27 Dispositivo amplificador de baixo ruído (lna) e método para construir um dispositivo amplificador de baixo ruído

Country Status (8)

Country Link
US (1) US10439565B2 (enExample)
EP (1) EP3688806A1 (enExample)
JP (1) JP7364557B2 (enExample)
KR (1) KR102605453B1 (enExample)
CN (1) CN111164757A (enExample)
BR (1) BR112020005696B1 (enExample)
CA (1) CA3073501C (enExample)
WO (1) WO2019067130A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11239325B2 (en) * 2020-04-28 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having backside via and method of fabricating thereof
DE102020122823B4 (de) 2020-05-12 2022-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtungen mit entkopplungskondensatoren
US11450600B2 (en) 2020-05-12 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including decoupling capacitors
US11626494B2 (en) * 2020-06-17 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial backside contact
JP7542338B2 (ja) * 2020-07-02 2024-08-30 株式会社東芝 電子回路、電流計測装置、電圧計測装置、電力変換器、およびインバータ
US11355487B2 (en) * 2020-07-20 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Layout designs of integrated circuits having backside routing tracks
JP2022025995A (ja) * 2020-07-30 2022-02-10 株式会社東芝 半導体装置
US11393831B2 (en) 2020-07-31 2022-07-19 Taiwan Semiconductor Manufacturing Company Limited Optimized static random access memory
US11437379B2 (en) 2020-09-18 2022-09-06 Qualcomm Incorporated Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits
US11404374B2 (en) 2020-09-30 2022-08-02 Qualcomm Incorporated Circuits employing a back side-front side connection structure for coupling back side routing to front side routing, and related complementary metal oxide semiconductor (CMOS) circuits and methods
US12218664B2 (en) 2020-10-21 2025-02-04 Arm Limited Backside power supply techniques
US12266601B2 (en) * 2021-03-30 2025-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with backside contact
US20220352256A1 (en) * 2021-04-28 2022-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Backside memory integration
US12224286B2 (en) 2021-09-22 2025-02-11 Qualcomm Incorporated Symmetric dual-sided MOS IC
CN116032221A (zh) * 2023-03-29 2023-04-28 成都明夷电子科技有限公司 一种低噪声共源共栅放大器及微波系统
US20250185292A1 (en) * 2023-12-04 2025-06-05 International Business Machines Corporation Extra gate device integration with semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917681B2 (ja) * 1978-10-18 1984-04-23 日立金属株式会社 エレベ−タベルトの緊張方法及び装置
US5541442A (en) * 1994-08-31 1996-07-30 International Business Machines Corporation Integrated compact capacitor-resistor/inductor configuration
US7402866B2 (en) 2006-06-27 2008-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Backside contacts for MOS devices
US7666723B2 (en) 2007-02-22 2010-02-23 International Business Machines Corporation Methods of forming wiring to transistor and related transistor
US8665570B2 (en) * 2009-03-13 2014-03-04 Qualcomm Incorporated Diode having a pocket implant blocked and circuits and methods employing same
US8716091B2 (en) 2010-03-30 2014-05-06 International Business Machines Corporation Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain
US9219129B2 (en) 2012-05-10 2015-12-22 International Business Machines Corporation Inverted thin channel mosfet with self-aligned expanded source/drain
US8748245B1 (en) 2013-03-27 2014-06-10 Io Semiconductor, Inc. Semiconductor-on-insulator integrated circuit with interconnect below the insulator
CN104241357A (zh) * 2013-06-18 2014-12-24 中芯国际集成电路制造(上海)有限公司 一种晶体管、集成电路以及集成电路的制造方法
US9165926B2 (en) * 2013-10-02 2015-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Dynamic threshold MOS and methods of forming the same
US9209305B1 (en) * 2014-06-06 2015-12-08 Stmicroelectronics, Inc. Backside source-drain contact for integrated circuit transistor devices and method of making same
WO2017052667A1 (en) 2015-09-27 2017-03-30 Intel Corporation Metal on both sides of the transistor integrated with magnetic inductors
US9755030B2 (en) 2015-12-17 2017-09-05 International Business Machines Corporation Method for reduced source and drain contact to gate stack capacitance
US9755029B1 (en) 2016-06-22 2017-09-05 Qualcomm Incorporated Switch device performance improvement through multisided biased shielding
US9780210B1 (en) 2016-08-11 2017-10-03 Qualcomm Incorporated Backside semiconductor growth
US10420171B2 (en) * 2016-08-26 2019-09-17 Qualcomm Incorporated Semiconductor devices on two sides of an isolation layer

Also Published As

Publication number Publication date
CN111164757A (zh) 2020-05-15
JP7364557B2 (ja) 2023-10-18
BR112020005696A2 (pt) 2020-10-20
US20190097592A1 (en) 2019-03-28
CA3073501A1 (en) 2019-04-04
KR20200060380A (ko) 2020-05-29
CA3073501C (en) 2024-11-12
JP2020535697A (ja) 2020-12-03
KR102605453B1 (ko) 2023-11-22
US10439565B2 (en) 2019-10-08
WO2019067130A1 (en) 2019-04-04
EP3688806A1 (en) 2020-08-05

Similar Documents

Publication Publication Date Title
BR112020005696B1 (pt) Dispositivo amplificador de baixo ruído (lna) e método para construir um dispositivo amplificador de baixo ruído
KR102054924B1 (ko) 듀얼-사이디드 프로세싱을 갖는 로직 회로 블록 레이아웃들
CN109643691B (zh) 背面半导体生长
CN109314097B (zh) 用于反向偏置开关晶体管的方法和装置
EP3510636A1 (en) Deep trench active device with backside body contact
US20190109570A1 (en) Transistor layout for improved harmonic performance
KR102816437B1 (ko) 듀얼 사이드 콘택 스위치에서의 커패시턴스 밸런스
US10483392B2 (en) Capacitive tuning using backside gate
BR112019002750B1 (pt) Estrutura de circuito integrado, método de construção de uma estrutura de circuito integrado e módulo de extremidade anterior de frequência de rádio
US20250072059A1 (en) Enhanced body tied to source low noise amplifier device
US20250046736A1 (en) Waffle-shaped radio frequency (rf) switch
US20250113606A1 (en) Body tied to source standard cell implementations in semiconductor-on-insulator (soi) technology
BR112019012321B1 (pt) Dispositivo de circuito integrado e módulo de front-end de radiofrequência (rf)
BR112020005804B1 (pt) Processamento de transferência de camada em volume com silicetação de fundo
BR112020005804A2 (pt) processamento de transferência de camada em volume com silicetação de fundo
HK40009868A (en) Logic circuit block layouts with dual-sided processing
HK40009868B (en) Logic circuit block layouts with dual-sided processing

Legal Events

Date Code Title Description
B350 Update of information on the portal [chapter 15.35 patent gazette]
B06W Patent application suspended after preliminary examination (for patents with searches from other patent authorities) chapter 6.23 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 27/08/2018, OBSERVADAS AS CONDICOES LEGAIS