CN111164757A - 低寄生电容低噪声放大器 - Google Patents

低寄生电容低噪声放大器 Download PDF

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Publication number
CN111164757A
CN111164757A CN201880062330.XA CN201880062330A CN111164757A CN 111164757 A CN111164757 A CN 111164757A CN 201880062330 A CN201880062330 A CN 201880062330A CN 111164757 A CN111164757 A CN 111164757A
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China
Prior art keywords
contact
transistor
coupled
drain
source
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Pending
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CN201880062330.XA
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English (en)
Chinese (zh)
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S·格科特佩里
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0064—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with separate antennas for the more than one band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication
    • H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
    • H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B15/00—Suppression or limitation of noise or interference
    • H04B15/005—Reducing noise, e.g. humm, from the supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/213—Cross-sectional shapes or dispositions
    • H10W20/2134—TSVs extending from the semiconductor wafer into back-end-of-line layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/218—Through-semiconductor vias, e.g. TSVs in silicon-on-insulator [SOI] wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/481—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes on the rear surfaces of the wafers or substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Transceivers (AREA)
CN201880062330.XA 2017-09-27 2018-08-27 低寄生电容低噪声放大器 Pending CN111164757A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762564155P 2017-09-27 2017-09-27
US62/564,155 2017-09-27
US15/976,710 US10439565B2 (en) 2017-09-27 2018-05-10 Low parasitic capacitance low noise amplifier
US15/976,710 2018-05-10
PCT/US2018/048128 WO2019067130A1 (en) 2017-09-27 2018-08-27 LOW NOISE AMPLIFIER WITH LOW PARASITE CAPACITY

Publications (1)

Publication Number Publication Date
CN111164757A true CN111164757A (zh) 2020-05-15

Family

ID=65809274

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880062330.XA Pending CN111164757A (zh) 2017-09-27 2018-08-27 低寄生电容低噪声放大器

Country Status (8)

Country Link
US (1) US10439565B2 (enExample)
EP (1) EP3688806A1 (enExample)
JP (1) JP7364557B2 (enExample)
KR (1) KR102605453B1 (enExample)
CN (1) CN111164757A (enExample)
BR (1) BR112020005696B1 (enExample)
CA (1) CA3073501C (enExample)
WO (1) WO2019067130A1 (enExample)

Cited By (1)

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CN116032221A (zh) * 2023-03-29 2023-04-28 成都明夷电子科技有限公司 一种低噪声共源共栅放大器及微波系统

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US11239325B2 (en) * 2020-04-28 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having backside via and method of fabricating thereof
DE102020122823B4 (de) 2020-05-12 2022-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtungen mit entkopplungskondensatoren
US11450600B2 (en) 2020-05-12 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including decoupling capacitors
US11626494B2 (en) * 2020-06-17 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial backside contact
JP7542338B2 (ja) * 2020-07-02 2024-08-30 株式会社東芝 電子回路、電流計測装置、電圧計測装置、電力変換器、およびインバータ
US11355487B2 (en) * 2020-07-20 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Layout designs of integrated circuits having backside routing tracks
JP2022025995A (ja) * 2020-07-30 2022-02-10 株式会社東芝 半導体装置
US11393831B2 (en) 2020-07-31 2022-07-19 Taiwan Semiconductor Manufacturing Company Limited Optimized static random access memory
US11437379B2 (en) 2020-09-18 2022-09-06 Qualcomm Incorporated Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits
US11404374B2 (en) 2020-09-30 2022-08-02 Qualcomm Incorporated Circuits employing a back side-front side connection structure for coupling back side routing to front side routing, and related complementary metal oxide semiconductor (CMOS) circuits and methods
US12218664B2 (en) 2020-10-21 2025-02-04 Arm Limited Backside power supply techniques
US12266601B2 (en) * 2021-03-30 2025-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with backside contact
US12593459B2 (en) * 2021-04-28 2026-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Backside memory integration
US12224286B2 (en) 2021-09-22 2025-02-11 Qualcomm Incorporated Symmetric dual-sided MOS IC
JP7838407B2 (ja) * 2022-06-10 2026-04-01 住友電気工業株式会社 増幅回路
US12706140B2 (en) 2022-11-03 2026-08-11 Arm Limited Buried metal techniques for memory applications
US20250046736A1 (en) * 2023-07-31 2025-02-06 Qualcomm Incorporated Waffle-shaped radio frequency (rf) switch
US20250185292A1 (en) * 2023-12-04 2025-06-05 International Business Machines Corporation Extra gate device integration with semiconductor device

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US20150091092A1 (en) * 2013-10-02 2015-04-02 Taiwan Semiconductor Manufacturing Company, Ltd. Dynamic Threshold MOS and Methods of Forming the Same

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CN107924949A (zh) 2015-09-27 2018-04-17 英特尔公司 与磁感应器集成的晶体管的两侧上的金属
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116032221A (zh) * 2023-03-29 2023-04-28 成都明夷电子科技有限公司 一种低噪声共源共栅放大器及微波系统

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JP7364557B2 (ja) 2023-10-18
US20190097592A1 (en) 2019-03-28
BR112020005696A2 (pt) 2020-10-20
US10439565B2 (en) 2019-10-08
EP3688806A1 (en) 2020-08-05
CA3073501A1 (en) 2019-04-04
CA3073501C (en) 2024-11-12
JP2020535697A (ja) 2020-12-03
KR20200060380A (ko) 2020-05-29
KR102605453B1 (ko) 2023-11-22
WO2019067130A1 (en) 2019-04-04
BR112020005696B1 (pt) 2023-11-21

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