JP7359267B2 - 接合用銅ペースト、接合体の製造方法及び半導体装置の製造方法 - Google Patents

接合用銅ペースト、接合体の製造方法及び半導体装置の製造方法 Download PDF

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JP7359267B2
JP7359267B2 JP2022138060A JP2022138060A JP7359267B2 JP 7359267 B2 JP7359267 B2 JP 7359267B2 JP 2022138060 A JP2022138060 A JP 2022138060A JP 2022138060 A JP2022138060 A JP 2022138060A JP 7359267 B2 JP7359267 B2 JP 7359267B2
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bonding
copper
particles
micro
mass
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JP2022180400A (ja
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祐貴 川名
和彦 蔵渕
芳則 江尻
偉夫 中子
千絵 須鎌
大 石川
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Resonac Corp
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Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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Description

本発明は、接合用銅ペースト、それを用いた接合体の製造方法及び半導体装置の製造方法、並びに接合体及び半導体装置に関する。
半導体装置を製造する際、半導体素子とリードフレーム等（支持部材）とを接合させるため、さまざまな接合材が用いられている。半導体装置の中でも、１５０℃以上の高温で動作させるパワー半導体、ＬＳＩ等の接合には、接合材として高融点鉛はんだが用いられてきた。近年、半導体素子の高容量化及び省スペース化により動作温度が高融点鉛はんだの融点近くまで上昇しており、接続信頼性を確保することが難しくなってきている。一方で、ＲｏＨＳ規制強化に伴い、鉛を含有しない接合材が求められている。
これまでにも、鉛はんだ以外の材料を用いた半導体素子の接合が検討されている。例えば、下記特許文献１には、銀ナノ粒子を低温焼結させ、焼結銀層を形成する技術が提案されている。このような焼結銀はパワーサイクルに対する接続信頼性が高いことが知られている（非特許文献１）。
更に別の材料として、銅粒子を焼結させ、焼結銅層を形成する技術も提案されている。例えば、下記特許文献２には、半導体素子と電極とを接合するための接合材として、酸化第２銅粒子及び還元剤を含む接合用ペーストが開示されている。また、下記特許文献３には、銅ナノ粒子と、銅マイクロ粒子もしくは銅サブマイクロ粒子、あるいはそれら両方を含む接合材が開示されている。
特許第４９２８６３９号 特許第５００６０８１号 特開２０１４－１６７１４５号公報
Ｒ． Ｋｈａｚａｋａ， Ｌ． Ｍｅｎｄｉｚａｂａｌ， Ｄ． Ｈｅｎｒｙ： Ｊ． ＥｌｅｃＴｒｏｎ． Ｍａｔｅｒ， ４３（７）， ２０１４， ２４５９－２４６６
上記特許文献１に記載の方法は、高い接続信頼性を得るには焼結銀層の緻密化が必須であるため、加圧を伴う熱圧着プロセスが必要となる。加圧を伴う熱圧着プロセスを行う場合、生産効率の低下、歩留まりの低下等の課題がある。更に、銀ナノ粒子を用いる場合、銀による材料コストの著しい増加等が問題となる。
上記特許文献２に記載の方法は、酸化銅から銅に還元する際の体積収縮を熱圧着プロセスにより回避している。しかし、熱圧着プロセスには、上述した課題がある。
上記特許文献３に記載の方法は、無加圧で焼結を行っているが、以下の点で実用に供するには未だ充分ではない。すなわち、銅ナノ粒子は酸化抑制及び分散性の向上のために保護剤で表面を修飾する必要があるが、銅ナノ粒子は比表面積が大きいため、銅ナノ粒子を主成分とする接合材においては表面保護剤の配合量が増える傾向にある。また、分散性を確保するために分散媒の配合量が増える傾向にある。そのため、上記特許文献３に記載の接合材は、保管、塗工等の供給安定性のため、表面保護剤又は分散媒の割合を多くしており、焼結時の体積収縮が大きくなりやすく、また焼結後の緻密度が低下しやすい傾向にあり焼結体強度の確保が難しい。
本発明は、無加圧での接合を行う場合であっても充分な接合強度を得ることができる接合用銅ペーストを提供することを目的とする。本発明は更に、接合用銅ペーストを用いる接合体の製造方法及び半導体装置の製造方法、並びに接合体及び半導体装置を提供することも目的とする。
本発明は、金属粒子と、分散媒と、を含む接合用銅ペーストであって、金属粒子が、体積平均粒径が０．１２μｍ以上０．８μｍ以下であるサブマイクロ銅粒子と、体積平均粒径が２μｍ以上５０μｍ以下であるマイクロ銅粒子とを含み、サブマイクロ銅粒子の含有量及びマイクロ銅粒子の含有量の合計が、金属粒子の全質量を基準として、８０質量％以上であり、サブマイクロ銅粒子の含有量が、サブマイクロ銅粒子の質量及びマイクロ銅粒子の質量の合計を基準として、３０質量％以上９０質量％以下である、接合用銅ペーストを提供する。
本発明の接合用銅ペーストによれば、無加圧での接合を行う場合であっても充分な接合強度を得ることができる。このような効果が得られる理由について、上記サブマイクロ銅粒子と上記マイクロ銅粒子とを特定の割合で含有させることにより、充分な焼結性を維持しつつ、表面保護剤又は分散媒に起因する焼結時の体積収縮を充分抑制することが可能となり、焼結体強度の確保及び被着面との接合力向上が達成されることが考えられる。また、本発明の接合用銅ペーストは、サブマイクロ銅粒子及びマイクロ銅粒子によって上述した効果を得ることができることから、高価な銅ナノ粒子を主成分とする接合材に比べて、より安価で且つ安定的に供給できるという利点を有する。これにより、例えば、半導体装置等の接合体を製造する場合に生産安定性を一層高めることが可能となる。
上記接合用銅ペーストにおいて、マイクロ銅粒子はフレーク状であってもよい。フレーク状のマイクロ銅粒子を用いる場合、例えば半導体装置におけるダイシェア強度及び接続信頼性を向上させることが更に容易となる。なお、このような効果が得られる理由として、接合用銅ペースト内のマイクロ銅粒子が、接合面に対して略平行に配向することにより、接合用銅ペーストを焼結させたときの体積収縮を抑制できること、フレーク状のマイクロ銅粒子の重なり面積が増大することで接合力が向上すること及び、フレーク状のマイクロ銅粒子がサブマイクロ銅粒子を整列し補強効果が得られることが考えられる。
本発明の接合用銅ペーストは無加圧接合用であってもよい。本明細書において、「無加圧」とは、接合する部材の自重、又はその自重に加え、０．０１ＭＰａ以下の圧力を受けている状態を意味する。
本発明はまた、第一の部材、該第一の部材の自重が働く方向側に、上記接合用銅ペースト、及び第二の部材がこの順に積層された積層体を用意し、接合用銅ペーストを、第一の部材の自重、又は第一の部材の自重及び０．０１ＭＰａ以下の圧力を受けた状態で焼結する工程を備える、接合体の製造方法を提供する。
本発明の接合体の製造方法によれば、上記接合用銅ペーストを用いることにより、無加圧接合によって部材同士が充分な接合力で接合された接合体を製造することができる。
本発明はまた、第一の部材、該第一の部材の自重が働く方向側に、上記接合用銅ペースト、及び第二の部材がこの順に積層された積層体を用意し、接合用銅ペーストを、第一の部材の自重、又は第一の部材の自重及び０．０１ＭＰａ以下の圧力を受けた状態で焼結する工程を備え、第一の部材及び第二の部材の少なくとも一方が半導体素子である、半導体装置の製造方法を提供する。
本発明の半導体装置の製造方法によれば、上記接合用銅ペーストを用いることにより、無加圧接合によってダイシェア強度に優れた半導体装置を製造することができる。また、本発明の半導体装置の製造方法によって製造される半導体装置は接続信頼性に優れたものになり得る。
本発明はまた、第一の部材と、第二の部材と、第一の部材と第二の部材とを接合する上記接合用銅ペーストの焼結体と、を備える、接合体を提供する。本発明の接合体は、第一の部材及び第二の部材が充分な接合力を有する銅の焼結体を介して接合されている。また本発明の接合体は、熱伝導率に優れた銅の焼結体を備えることにより、部材の放熱性に優れたものになり得る。
上記接合体において、第一の部材及び第二の部材の少なくとも一方が、焼結体と接する面に、銅、ニッケル、銀、金及びパラジウムからなる群から選択される少なくとも１種の金属を含んでいてもよい。この場合、第一の部材及び第二の部材の少なくとも一方と、焼結体との接着性を更に高めることができる。
本発明はまた、第一の部材と、第二の部材と、第一の部材と第二の部材とを接合する上記接合用銅ペーストの焼結体と、を備え、第一の部材及び第二の部材の少なくとも一方が半導体素子である、半導体装置を提供する。本発明の半導体装置は、充分な接合力を有し、熱伝導率及び融点が高い銅の焼結体を備えることにより、充分なダイシェア強度を有し、接続信頼性に優れるとともに、パワーサイクル耐性にも優れたものになり得る。
本発明によれば、無加圧での接合を行う場合であっても充分な接合強度を得ることができる接合用銅ペーストを提供することができる。本発明は更に、接合用銅ペーストを用いる接合体の製造方法及び半導体装置の製造方法、並びに接合体及び半導体装置を提供することができる。
本実施形態の接合用銅ペーストを用いて製造される接合体の一例を示す模式断面図である。 本実施形態の接合用銅ペーストを用いて製造される半導体装置の一例を示す模式断面図である。 本実施形態の接合用銅ペーストを用いて製造される半導体装置の一例を示す模式断面図である。 本実施形態の接合用銅ペーストを用いて製造される半導体装置の一例を示す模式断面図である。 本実施形態の接合用銅ペーストを用いて製造される半導体装置の一例を示す模式断面図である。 本実施形態の接合用銅ペーストを用いて製造される半導体装置の一例を示す模式断面図である。 本実施形態の接合用銅ペーストを用いて製造される半導体装置の一例を示す模式断面図である。 本実施形態の接合用銅ペーストを用いて製造される半導体装置の一例を示す模式断面図である。 本実施形態の接合用銅ペーストを用いて製造される半導体装置の一例を示す模式断面図である。 実施例１の接合体の断面のＳＥＭ像を示す。 実施例１２の接合体の断面のＳＥＭ像を示す。 実施例１３の接合体の断面のＳＥＭ像を示す。 比較例２の接合体の断面のＳＥＭ像を示す。
以下、本発明を実施するための形態（以下、「本実施形態」という。）について詳細に説明する。本発明は、以下の実施形態に限定されるものではない。
＜接合用銅ペースト＞
本実施形態の接合用銅ペーストは、金属粒子と、分散媒と、を含む接合用銅ペーストであって、金属粒子がサブマイクロ銅粒子及びマイクロ銅粒子を含む。
（金属粒子）
本実施形態に係る金属粒子としては、サブマイクロ銅粒子、マイクロ銅粒子、銅粒子以外のその他の金属粒子等が挙げられる。
（サブマイクロ銅粒子）
サブマイクロ銅粒子としては、粒径が０．１２μｍ以上０．８μｍ以下の銅粒子を含むものが挙げられ、例えば、体積平均粒径が０．１２μｍ以上０．８μｍ以下の銅粒子を用いることができる。サブマイクロ銅粒子の体積平均粒径が０．１２μｍ以上であれば、サブマイクロ銅粒子の合成コストの抑制、良好な分散性、表面処理剤の使用量の抑制といった効果が得られやすくなる。サブマイクロ銅粒子の体積平均粒径が０．８μｍ以下であれば、サブマイクロ銅粒子の焼結性が優れるという効果が得られやすくなる。より一層上記効果を奏するという観点から、サブマイクロ銅粒子の体積平均粒径は、０．１５μｍ以上０．８μｍ以下であってもよく、０．１５μｍ以上０．６μｍ以下であってもよく、０．２μｍ以上０．５μｍ以下であってもよく、０．３μｍ以上０．４５μｍ以下であってもよい。
なお、本願明細書において体積平均粒径とは、５０％体積平均粒径を意味する。銅粒子の体積平均粒径を求める場合、原料となる銅粒子、又は接合用銅ペーストから揮発成分を除去した乾燥銅粒子を、分散剤を用いて分散媒に分散させたものを光散乱法粒度分布測定装置（例えば、島津ナノ粒子径分布測定装置（ＳＡＬＤ－７５００ｎａｎｏ，株式会社島津製作所製））で測定する方法等により求めることができる。光散乱法粒度分布測定装置を用いる場合、分散媒としては、ヘキサン、トルエン、α－テルピネオール等を用いることができる。
サブマイクロ銅粒子は、粒径が０．１２μｍ以上０．８μｍ以下の銅粒子を１０質量％以上含むことができる。接合用銅ペーストの焼結性の観点から、サブマイクロ銅粒子は、粒径が０．１２μｍ以上０．８μｍ以下の銅粒子を２０質量％以上含むことができ、３０質量％以上含むことができ、１００質量％含むことができる。サブマイクロ銅粒子における粒径が０．１２μｍ以上０．８μｍ以下の銅粒子の含有割合が２０質量％以上であると、銅粒子の分散性がより向上し、粘度の上昇、ペースト濃度の低下をより抑制することができる。
銅粒子の粒径は、下記方法により求めることができる。銅粒子の粒径は、例えば、ＳＥＭ像から算出することができる。銅粒子の粉末を、ＳＥＭ用のカーボンテープ上にスパチュラで載せ、ＳＥＭ用サンプルとする。このＳＥＭ用サンプルをＳＥＭ装置により５０００倍で観察する。このＳＥＭ像の銅粒子に外接する四角形を画像処理ソフトにより作図し、その一辺をその粒子の粒径とする。
サブマイクロ銅粒子の含有量は、金属粒子の全質量を基準として、２０質量％以上９０質量％以下であってもよく、３０質量％以上９０質量％以下であってもよく、３５質量％以上８５質量％以下であってもよく、４０質量％以上８０質量％以下であってもよい。サブマイクロ銅粒子の含有量が上記範囲内であれば、接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となる。接合用銅ペーストを半導体素子の接合に用いる場合、サブマイクロ銅粒子の含有量が上記範囲内であれば、半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。
サブマイクロ銅粒子の含有量は、サブマイクロ銅粒子の質量及びマイクロ銅粒子の質量の合計を基準として、２０質量％以上９０質量％以下であることが好ましい。サブマイクロ銅粒子の上記含有量が２０質量％以上であれば、マイクロ銅粒子の間を充分に充填することができ、接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となり、接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。サブマイクロ銅粒子の含有量が９０質量％以下であれば、接合用銅ペーストを焼結した時の体積収縮を充分に抑制できるため、接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となる。接合用銅ペーストを半導体素子の接合に用いる場合、サブマイクロ銅粒子の含有量が９０質量％以下であれば、半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。より一層上記効果を奏するという観点から、サブマイクロ銅粒子の含有量は、サブマイクロ銅粒子の質量及びマイクロ銅粒子の質量の合計を基準として、３０質量％以上８５質量％以下であってもよく、３５質量％以上８５質量％以下であってもよく、４０質量％以上８０質量％以下であってもよい。
サブマイクロ銅粒子の形状は、特に限定されるものではない。サブマイクロ銅粒子の形状としては、例えば、球状、塊状、針状、フレーク状、略球状及びこれらの凝集体が挙げられる。分散性及び充填性の観点から、サブマイクロ銅粒子の形状は、球状、略球状、フレーク状であってもよく、燃焼性、分散性、フレーク状マイクロ粒子との混合性等の観点から、球状又は略球状であってもよい。本明細書において、「フレーク状」とは、板状、鱗片状等の平板状の形状を包含する。
サブマイクロ銅粒子は、分散性、充填性、及びフレーク状マイクロ粒子との混合性の観点から、アスペクト比が５以下であってもよく、３以下であってもよい。本明細書において、「アスペクト比」とは、粒子の長辺／厚みを示す。粒子の長辺及び厚みの測定は、例えば、粒子のＳＥＭ像から求めることができる。
サブマイクロ銅粒子は、特定の表面処理剤で処理されていてもよい。特定の表面処理剤としては、例えば、炭素数８～１６の有機酸が挙げられる。炭素数８～１６の有機酸としては、例えば、カプリル酸、メチルヘプタン酸、エチルヘキサン酸、プロピルペンタン酸、ペラルゴン酸、メチルオクタン酸、エチルヘプタン酸、プロピルヘキサン酸、カプリン酸、メチルノナン酸、エチルオクタン酸、プロピルヘプタン酸、ブチルヘキサン酸、ウンデカン酸、メチルデカン酸、エチルノナン酸、プロピルオクタン酸、ブチルヘプタン酸、ラウリン酸、メチルウンデカン酸、エチルデカン酸、プロピルノナン酸、ブチルオクタン酸、ペンチルヘプタン酸、トリデカン酸、メチルドデカン酸、エチルウンデカン酸、プロピルデカン酸、ブチルノナン酸、ペンチルオクタン酸、ミリスチン酸、メチルトリデカン酸、エチルドデカン酸、プロピルウンデカン酸、ブチルデカン酸、ペンチルノナン酸、ヘキシルオクタン酸、ペンタデカン酸、メチルテトラデカン酸、エチルトリデカン酸、プロピルドデカン酸、ブチルウンデカン酸、ペンチルデカン酸、ヘキシルノナン酸、パルミチン酸、メチルペンタデカン酸、エチルテトラデカン酸、プロピルトリデカン酸、ブチルドデカン酸、ペンチルウンデカン酸、ヘキシルデカン酸、ヘプチルノナン酸、メチルシクロヘキサンカルボン酸、エチルシクロヘキサンカルボン酸、プロピルシクロヘキサンカルボン酸、ブチルシクロヘキサンカルボン酸、ペンチルシクロヘキサンカルボン酸、ヘキシルシクロヘキサンカルボン酸、ヘプチルシクロヘキサンカルボン酸、オクチルシクロヘキサンカルボン酸、ノニルシクロヘキサンカルボン酸等の飽和脂肪酸；オクテン酸、ノネン酸、メチルノネン酸、デセン酸、ウンデセン酸、ドデセン酸、トリデセン酸、テトラデセン酸、ミリストレイン酸、ペンタデセン酸、ヘキサデセン酸、パルミトレイン酸、サビエン酸等の不飽和脂肪酸；テレフタル酸、ピロメリット酸、ｏ－フェノキシ安息香酸、メチル安息香酸、エチル安息香酸、プロピル安息香酸、ブチル安息香酸、ペンチル安息香酸、ヘキシル安息香酸、ヘプチル安息香酸、オクチル安息香酸、ノニル安息香酸等の芳香族カルボン酸が挙げられる。有機酸は、１種を単独で使用してもよく、２種以上を組み合わせて使用してもよい。このような有機酸と上記サブマイクロ銅粒子とを組み合わせることで、サブマイクロ銅粒子の分散性と焼結時における有機酸の脱離性とを両立できる傾向にある。
表面処理剤の処理量は、サブマイクロ銅粒子の表面に一分子層～三分子層付着する量であってもよい。この量は、サブマイクロ銅粒子の表面に付着した分子層数（ｎ）と、サブマイクロ銅粒子の比表面積（Ａｐ）（単位ｍ２／ｇ）と、表面処理剤の分子量（Ｍｓ）（単位ｇ／ｍｏｌ）と、表面処理剤の最小被覆面積（ＳＳ）（単位ｍ２／個）と、アボガドロ数（ＮＡ）（６．０２×１０２３個）とから算出できる。具体的には、表面処理剤の処理量は、表面処理剤の処理量（質量％）＝｛（ｎ・Ａｐ・Ｍｓ）／（ＳＳ・ＮＡ＋ｎ・Ａｐ・Ｍｓ）｝×１００％の式に従って算出される。
サブマイクロ銅粒子の比表面積は、乾燥させたサブマイクロ銅粒子をＢＥＴ比表面積測定法で測定することで算出できる。表面処理剤の最小被覆面積は、表面処理剤が直鎖飽和脂肪酸の場合、２．０５×１０－１９ｍ２／１分子である。それ以外の表面処理剤の場合には、例えば、分子モデルからの計算、又は「化学と教育」（上江田捷博、稲福純夫、森巌、４０（２），１９９２，ｐ１１４－１１７）に記載の方法で測定できる。表面処理剤の定量方法の一例を示す。表面処理剤は、接合用銅ペーストから分散媒を除去した乾燥粉の熱脱離ガス・ガスクロマトグラフ質量分析計により同定でき、これにより表面処理剤の炭素数及び分子量を決定できる。表面処理剤の炭素分割合は、炭素分分析により分析できる。炭素分分析法としては、例えば、高周波誘導加熱炉燃焼／赤外線吸収法が挙げられる。同定された表面処理剤の炭素数、分子量及び炭素分割合から上記式により表面処理剤量を算出できる。
表面処理剤の上記処理量は、０．０７質量％以上２．１質量％以下であってもよく、０．１０質量％以上１．６質量％以下であってもよく、０．２質量％以上１．１質量％以下であってもよい。
上記サブマイクロ銅粒子は良好な焼結性を有するため、銅ナノ粒子を主に用いた接合材にみられる高価な合成コスト、良好でない分散性、焼結後の体積収縮の低下等の課題を低減することができる。
本実施形態に係るサブマイクロ銅粒子としては、市販されているものを用いることができる。市販されているサブマイクロ粒子としては、例えば、ＣＨ－０２００（三井金属鉱業株式会社製、体積平均粒径０．３６μｍ）、ＨＴ－１４（三井金属鉱業株式会社製、体積平均粒径０．４１μｍ）、ＣＴ－５００（三井金属鉱業株式会社製、体積平均粒径０．７２μｍ）、Ｔｎ－Ｃｕ１００（太陽日酸株式会社製、体積平均粒径０．１２μｍ）が挙げられる。
（マイクロ銅粒子）
マイクロ銅粒子としては、粒径が２μｍ以上５０μｍ以下の銅粒子を含むものが挙げられ、例えば、体積平均粒径が２μｍ以上５０μｍ以下の銅粒子を用いることができる。マイクロ銅粒子の体積平均粒径が上記範囲内であれば、接合用銅ペーストを焼結した際の体積収縮を充分に低減でき、接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となる。接合用銅ペーストを半導体素子の接合に用いる場合、マイクロ銅粒子の体積平均粒径が上記範囲内であれば、半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。より一層上記効果を奏するという観点から、マイクロ銅粒子の体積平均粒径は、３μｍ以上２０μｍ以下であってもよく、３μｍ以上１０μｍ以下であってもよい。
マイクロ銅粒子は、粒径が２μｍ以上５０μｍ以下の銅粒子を５０質量％以上含むことができる。接合体内での配向、補強効果、接合ペーストの充填性の観点から、マイクロ銅粒子は、粒径が２μｍ以上５０μｍ以下の銅粒子を７０質量％以上含むことができ、８０質量％以上含むことができ、１００質量％含むことができる。接合不良を抑制する観点から、マイクロ銅粒子は、例えば、最大径が２０μｍを超える粒子などの接合厚みを超えるサイズの粒子を含まないことが好ましい。
マイクロ銅粒子の含有量は、金属粒子の全質量を基準として、１０質量％以上９０質量％以下であってもよく、１５質量％以上６５質量％以下であってもよく、２０質量％以上６０質量％以下であってもよい。マイクロ銅粒子の含有量が、上記範囲内であれば、接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となる。接合用銅ペーストを半導体素子の接合に用いる場合、マイクロ銅粒子の含有量が上記範囲内であれば、半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。
サブマイクロ銅粒子の含有量及びマイクロ銅粒子の含有量の合計は、金属粒子の全質量を基準として、８０質量％以上とすることができる。サブマイクロ銅粒子の含有量及びマイクロ銅粒子の含有量の合計が上記範囲内であれば、接合用銅ペーストを焼結した際の体積収縮を充分に低減でき、接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となる。接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。より一層上記効果を奏するという観点から、サブマイクロ銅粒子の含有量及びマイクロ銅粒子の含有量の合計は、金属粒子の全質量を基準として、９０質量％以上であってもよく、９５質量％以上であってもよく、１００質量％であってもよい。
マイクロ銅粒子の形状は、特に限定されるものではない。マイクロ銅粒子の形状としては、例えば、球状、塊状、針状、フレーク状、略球状、及びこれらの凝集体が挙げられる。マイクロ銅粒子の形状は、中でも、フレーク状が好ましい。フレーク状のマイクロ銅粒子を用いることで、接合用銅ペースト内のマイクロ銅粒子が、接合面に対して略平行に配向することにより、接合用銅ペーストを焼結させたときの体積収縮を抑制でき、接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となる。接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。より一層上記効果を奏するという観点から、フレーク状のマイクロ銅粒子としては、中でも、アスペクト比が４以上であってもよく、６以上であってもよい。
マイクロ銅粒子において、表面処理剤の処理の有無は特に限定されるものではない。分散安定性及び耐酸化性の観点から、マイクロ銅粒子は表面処理剤で処理されていてもよい。表面処理剤は、接合時に除去されるものであってもよい。このような表面処理剤としては、例えば、パルミチン酸、ステアリン酸、アラキジン酸、オレイン酸等の脂肪族カルボン酸；テレフタル酸、ピロメリット酸、ｏ－フェノキシ安息香酸等の芳香族カルボン酸；セチルアルコール、ステアリルアルコール、イソボルニルシクロヘキサノール、テトラエチレングリコール等の脂肪族アルコール；ｐ－フェニルフェノール等の芳香族アルコール；オクチルアミン、ドデシルアミン、ステアリルアミン等のアルキルアミン；ステアロニトリル、デカニトリル等の脂肪族ニトリル；アルキルアルコキシシラン等のシランカップリング剤；ポリエチレングリコール、ポリビニルアルコール、ポリビニルピロリドン、シリコーンオリゴマー等の高分子処理剤などが挙げられる。表面処理剤は、１種を単独で使用してもよく、２種以上を組み合わせて使用してもよい。
表面処理剤の処理量は、粒子表面に一分子層以上の量であってもよい。このような表面処理剤の処理量は、マイクロ銅粒子の比表面積、表面処理剤の分子量、及び表面処理剤の最小被覆面積により変化する。表面処理剤の処理量は、通常０．００１質量％以上である。マイクロ銅粒子の比表面積、表面処理剤の分子量、及び表面処理剤の最小被覆面積については、上述した方法により算出することができる。
上記サブマイクロ銅粒子のみから接合用銅ペーストを調製する場合、分散媒の乾燥に伴う体積収縮及び焼結収縮が大きいため、接合用銅ペーストの焼結時に被着面より剥離しやすくなり、半導体素子等の接合においては充分なダイシェア強度及び接続信頼性が得られにくい。サブマイクロ銅粒子とマイクロ銅粒子とを併用することで、接合用銅ペーストを焼結させたときの体積収縮が抑制され、接合体は充分な接合強度を有することができる。接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示すという効果が得られる。
本実施形態に係るマイクロ銅粒子としては、市販されているものを用いることができる。市販されているマイクロ粒子としては、例えば、ＭＡ－Ｃ０２５（三井金属鉱業株式会社製、体積平均粒径７．５μｍ）、３Ｌ３（福田金属箔粉工業株式会社製、体積平均粒径８．０μｍ）、１１１０Ｆ（三井金属鉱業株式会社製、体積平均粒径３．８μｍ）、Ｃｕ－ＨＷＱ３．０μｍ（福田金属箔粉工業株式会社製、体積平均粒径３．０μｍ）が挙げられる。
（銅粒子以外のその他の金属粒子）
金属粒子としては、サブマイクロ銅粒子及びマイクロ銅粒子以外のその他の金属粒子を含んでいてもよく、例えば、ニッケル、銀、金、パラジウム、白金等の粒子を含んでいてもよい。その他の金属粒子は、体積平均粒径が０．０１μｍ以上１０μｍ以下であってもよく、０．０１μｍ以上５μｍ以下であってもよく、０．０５μｍ以上３μｍ以下であってもよい。その他の金属粒子を含んでいる場合、その含有量は、充分な接合性を得るという観点から、金属粒子の全質量を基準として、２０質量％未満であってもよく、１０質量％以下であってもよい。その他の金属粒子は、含まれなくてもよい。その他の金属粒子の形状は、特に限定されるものではない。
銅粒子以外の金属粒子を含むことで、複数種の金属が固溶又は分散した焼結体を得ることができるため、焼結体の降伏応力、疲労強度等の機械的な特性が改善され、接続信頼性が向上しやすい。また、複数種の金属粒子を添加することで、接合用銅ペーストの焼結体は、特定の被着体に対して充分な接合強度を有することができる。接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置のダイシェア強度及び接続信頼性が向上しやすい。
（分散媒）
分散媒は特に限定されるものではなく、揮発性のものであってもよい。揮発性の分散媒としては、例えば、ペンタノール、ヘキサノール、ヘプタノール、オクタノール、デカノール、エチレングリコール、ジエチレングリコール、プロピレングリコール、ブチレングリコール、α－テルピネオール、イソボルニルシクロヘキサノール（ＭＴＰＨ）等の一価及び多価アルコール類；エチレングリコールブチルエーテル、エチレングリコールフェニルエーテル、ジエチレングリコールメチルエーテル、ジエチレングリコールエチルエーテル、ジエチレングリコールブチルエーテル、ジエチレングリコールイソブチルエーテル、ジエチレングリコールヘキシルエーテル、トリエチレングリコールメチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールジブチルエーテル、ジエチレングリコールブチルメチルエーテル、ジエチレングリコールイソプロピルメチルエーテル、トリエチレングリコールジメチルエーテル、トリエチレングリコールブチルメチルエーテル、プロピレングリコールプロピルエーテル、ジプロピレングリコールメチルエーテル、ジプロピレングリコールエチルエーテル、ジプロピレングリコールプロピルエーテル、ジプロピレングリコールブチルエーテル、ジプロピレングリコールジメチルエーテル、トリプロピレングリコールメチルエーテル、トリプロピレングリコールジメチルエーテル等のエーテル類；エチレングリコールエチルエーテルアセテート、エチレングリコールブチルエーテルアセテート、ジエチレングリコールエチルエーテルアセテート、ジエチレングリコールブチルエーテルアセテート、ジプロピレングリコールメチルエーテルアセテート（ＤＰＭＡ）、乳酸エチル、乳酸ブチル、γ－ブチロラクトン、炭酸プロピレン等のエステル類；Ｎ－メチル－２－ピロリドン、Ｎ，Ｎ－ジメチルアセトアミド、Ｎ，Ｎ－ジメチルホルムアミド等の酸アミド；シクロヘキサノン、オクタン、ノナン、デカン、ウンデカン等の脂肪族炭化水素；ベンゼン、トルエン、キシレン等の芳香族炭化水素；炭素数１～１８のアルキル基を有するメルカプタン類；炭素数５～７のシクロアルキル基を有するメルカプタン類が挙げられる。炭素数１～１８のアルキル基を有するメルカプタン類としては、例えば、エチルメルカプタン、ｎ－プロピルメルカプタン、ｉ－プロピルメルカプタン、ｎ－ブチルメルカプタン、ｉ－ブチルメルカプタン、ｔ－ブチルメルカプタン、ペンチルメルカプタン、ヘキシルメルカプタン及びドデシルメルカプタンが挙げられる。炭素数５～７のシクロアルキル基を有するメルカプタン類としては、例えば、シクロペンチルメルカプタン、シクロヘキシルメルカプタン及びシクロヘプチルメルカプタンが挙げられる。
分散媒の含有量は、金属粒子の全質量を１００質量部として、５～５０質量部であってもよい。分散媒の含有量が上記範囲内であれば、接合用銅ペーストをより適切な粘度に調整でき、また、銅粒子の焼結を阻害しにくい。
（添加剤）
接合用銅ペーストには、必要に応じて、ノニオン系界面活性剤、フッ素系界面活性剤等の濡れ向上剤；シリコーン油等の消泡剤；無機イオン交換体等のイオントラップ剤などを適宜添加してもよい。
本実施形態の接合用銅ペーストの一態様としては、上記金属粒子が、体積平均粒径が０．１２μｍ以上０．８μｍ以下、好ましくは０．１５μｍ以上０．８μｍ以下であるサブマイクロ銅粒子と、体積平均粒径が２μｍ以上５０μｍ以下であるマイクロ銅粒子を含み、サブマイクロ銅粒子の含有量及びマイクロ銅粒子の含有量の合計が、金属粒子の全質量を基準として、８０質量％以上であり、サブマイクロ銅粒子の含有量が、サブマイクロ銅粒子の質量及びマイクロ銅粒子の質量の合計を基準として、３０質量％以上９０質量％以下である接合用銅ペーストが挙げられる。
上記接合用銅ペーストとしては、体積平均粒径が０．１２μｍ以上０．８μｍ以下、好ましくは０．１５μｍ以上０．８μｍ以下であるサブマイクロ銅粒子と、体積平均粒径が２μｍ以上５０μｍ以下であるマイクロ銅粒子と、分散媒と、必要に応じてその他の上記成分を配合してなり、サブマイクロ銅粒子の配合量及びマイクロ銅粒子の配合量の合計が、金属粒子の全質量を基準として、８０質量％以上であり、サブマイクロ銅粒子の配合量が、サブマイクロ銅粒子の配合量及びマイクロ銅粒子の配合量の合計を基準として、３０質量％以上９０質量％以下であるものが挙げられる。
また、本実施形態の接合用銅ペーストの別の態様としては、サブマイクロ銅粒子として、粒径が０．１２μｍ以上０．８μｍ以下、好ましくは０．１５μｍ以上０．８μｍ以下である銅粒子を、金属粒子の全質量を基準として、２４～８０質量％含有し、マイクロ銅粒子として、粒径が２μｍ以上５０μｍ以下であるマイクロ銅粒子を、金属粒子の全質量を基準として、８～７０質量％含有し、サブマイクロ銅粒子の含有量が、サブマイクロ銅粒子の質量及びマイクロ銅粒子の質量の合計を基準として、３０質量％以上９０質量％以下である接合用銅ペーストが挙げられる。ここでの粒径は、最大粒径を意味し、原料となる銅粒子、又は接合用銅ペーストから揮発成分を除去した乾燥銅粒子を走査型電子顕微鏡（ＳＥＭ）で観察する方法により求められる。
銅粒子が球状でない場合は、その粒径は、下記方法により求められる最大粒径とすることができる。銅粒子の最大粒径をＳＥＭ像から算出する方法を例示する。銅粒子の粉末を、ＳＥＭ用のカーボンテープ上にスパチュラで載せ、ＳＥＭ用サンプルとする。このＳＥＭ用サンプルをＳＥＭ装置により５０００倍で観察する。このＳＥＭ像の銅粒子に外接する長方形を画像処理ソフトにより作図し、長方形の長辺をその粒子の長径とする。この長径を最大粒径とする。
（接合用銅ペーストの調製）
接合用銅ペーストは、上述のサブマイクロ銅粒子、マイクロ銅粒子、その他の金属粒子及び任意の添加剤を分散媒に混合して調製することができる。各成分の混合後に、撹拌処理を行ってもよい。接合用銅ペーストは、分級操作により分散液の最大粒径を調整してもよい。このとき、分散液の最大粒径は２０μｍ以下とすることができ、１０μｍ以下とすることもできる。
接合用銅ペーストは、サブマイクロ銅粒子、表面処理剤、分散媒をあらかじめ混合して、分散処理を行ってサブマイクロ銅粒子の分散液を調製し、更にマイクロ銅粒子、その他の金属粒子及び任意の添加剤を混合して調製してもよい。このような手順とすることで、サブマイクロ銅粒子の分散性が向上してマイクロ銅粒子との混合性が良くなり、接合用銅ペーストの性能がより向上する。サブマイクロ銅粒子の分散液を分級操作によって凝集物を除去してもよい。
撹拌処理は、撹拌機を用いて行うことができる。撹拌機としては、例えば、自転公転型攪拌装置、ライカイ機、二軸混練機、三本ロールミル、プラネタリーミキサー、薄層せん断分散機が挙げられる。
分級操作は、例えば、ろ過、自然沈降、遠心分離を用いて行うことができる。ろ過用のフィルタとしては、例えば、金属メッシュ、メタルフィルター、ナイロンメッシュが挙げられる。
分散処理としては、例えば、薄層せん断分散機、ビーズミル、超音波ホモジナイザー、ハイシアミキサー、狭ギャップ三本ロールミル、湿式超微粒化装置、超音速式ジェットミル、超高圧ホモジナイザーが挙げられる。
接合用銅ペーストは、成型する場合には各々の印刷・塗布手法に適した粘度に調整してもよい。接合用銅ペーストの粘度としては、例えば、２５℃におけるＣａｓｓｏｎ粘度が０．０５Ｐａ・ｓ以上２．０Ｐａ・ｓ以下であってもよく、０．０６Ｐａ・ｓ以上１．０Ｐａ・ｓ以下であってもよい。
本実施形態の接合用銅ペーストによれば、上述のサブマイクロ銅粒子及びマイクロ銅粒子を所定の割合で併用することで、良好な焼結性を得ることができ、更に、焼結時の体積収縮を抑制することができる。そのため、本実施形態の接合用銅ペーストは、過度の加圧をすることなく、部材との接合力を確保することができ、接合用銅ペーストを焼結させて製造される接合体は充分な接合強度を有することができる。接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示す。すなわち、本実施形態の接合用銅ペーストは、無加圧接合用の接合材として用いてもよい。また、本実施形態の接合用銅ペーストによれば、比較的安価な銅粒子を用いることで、製造コストを抑えることができ、大量生産をすることができる。特に、本実施形態の接合用銅ペーストは、サブマイクロ銅粒子及びマイクロ銅粒子によって上述した効果を得ることができることから、高価な銅ナノ粒子を主成分とする接合材に比べて、より安価で且つ安定的に供給できるという利点を有する。これにより、例えば、半導体装置等の接合体を製造する場合に生産安定性を一層高めることが可能となる。
＜接合体及び半導体装置＞
以下、図面を参照しながら好適な実施形態について詳細に説明する。なお、図面中、同一又は相当部分には同一符号を付し、重複する説明は省略する。また、図面の寸法比率は、図示の比率に限られるものではない。
図１は、本実施形態の接合用銅ペーストを用いて製造される接合体の一例を示す模式断面図である。本実施形態の接合体１００は、第一の部材２と、第二の部材３と、第一の部材と第二の部材とを接合する上記接合用銅ペーストの焼結体１と、を備える。
第一の部材２及び第二の部材３としては、例えば、ＩＧＢＴ、ダイオード、ショットキーバリヤダイオード、ＭＯＳ－ＦＥＴ、サイリスタ、ロジック、センサー、アナログ集積回路、ＬＥＤ、半導体レーザー、発信器等の半導体素子、リードフレーム、金属板貼付セラミックス基板（例えばＤＢＣ）、ＬＥＤパッケージ等の半導体素子搭載用基材、銅リボン及び金属フレーム等の金属配線、金属ブロック等のブロック体、端子等の給電用部材、放熱板、水冷板などが挙げられる。
第一の部材２及び第二の部材３は、接合用銅ペーストの焼結体と接する面４ａ及び４ｂに金属を含んでいてもよい。金属としては、例えば、銅、ニッケル、銀、金、パラジウム、白金、鉛、錫、コバルト等が挙げられる。金属は、１種を単独で使用してもよく、２種以上を組み合わせて使用してもよい。また、焼結体と接する面は、上記金属を含む合金であってもよい。合金に用いられる金属としては、上記金属の他に、亜鉛、マンガン、アルミニウム、ベリリウム、チタン、クロム、鉄、モリブデン等が挙げられる。焼結体と接する面に金属を含む部材としては、例えば、各種金属メッキを有する部材、ワイヤ、金属メッキを有するチップ、ヒートスプレッダ、金属板が貼り付けられたセラミックス基板、各種金属メッキを有するリードフレーム又は各種金属からなるリードフレーム、銅板、銅箔が挙げられる。また、第二の部材３が半導体素子である場合、第一の部材２は、金属フレーム等の金属配線、金属ブロック等の熱伝導性及び導電性を有するブロック体などであってもよい。
接合体のダイシェア強度は、第一の部材及び第二の部材を充分に接合するという観点から、１０ＭＰａ以上であってもよく、１５ＭＰａ以上であってもよく、２０ＭＰａ以上であってもよく、３０ＭＰａ以上であってもよい。ダイシェア強度は、万能型ボンドテスタ（４０００シリーズ、ＤＡＧＥ社製）等を用いて測定することができる。
接合用銅ペーストの焼結体の熱伝導率は、放熱性及び高温化での接続信頼性という観点から、１００Ｗ／（ｍ・Ｋ）以上であってもよく、１２０Ｗ／（ｍ・Ｋ）以上であってもよく、１５０Ｗ／（ｍ・Ｋ）以上であってもよい。熱伝導率は、接合用銅ペーストの焼結体の熱拡散率、比熱容量、及び密度から、算出することができる。
以下、本実施形態の接合用銅ペーストを用いた接合体の製造方法について説明する。
本実施形態の接合用銅ペーストを用いた接合体の製造方法は、第一の部材、該第一の部材の自重が働く方向側に、上記接合用銅ペースト、及び第二の部材がこの順に積層された積層体を用意し、接合用銅ペーストを、第一の部材の自重、又は第一の部材の自重及び０．０１ＭＰａ以下の圧力を受けた状態で焼結する工程を備える。第一の部材の自重が働く方向とは、重力が働く方向ということもできる。
上記積層体は、例えば、第二の部材の必要な部分に本実施形態の接合用銅ペーストを設け、次いで接合用銅ペースト上に第一の部材を配置することにより用意することができる。
本実施形態の接合用銅ペーストを、第二の部材の必要な部分に設ける方法としては、接合用銅ペーストを堆積させられる方法であればよい。このような方法としては、例えば、スクリーン印刷、転写印刷、オフセット印刷、ジェットプリンティング法、ディスペンサー、ジェットディスペンサ、ニードルディスペンサ、カンマコータ、スリットコータ、ダイコータ、グラビアコータ、スリットコート、凸版印刷、凹版印刷、グラビア印刷、ステンシル印刷、ソフトリソグラフ、バーコート、アプリケータ、粒子堆積法、スプレーコータ、スピンコータ、ディップコータ、電着塗装等を用いることができる。接合用銅ペーストの厚みは、１μｍ以上１０００μｍ以下であってもよく、１０μｍ以上５００μｍ以下であってもよく、５０μｍ以上２００μｍ以下であってもよく、１０μｍ以上３０００μｍ以下であってもよく、１５μｍ以上５００μｍ以下であってもよく、２０μｍ以上３００μｍ以下であってもよく、５μｍ以上５００μｍ以下であってもよく、１０μｍ以上２５０μｍ以下であってもよく、１５μｍ以上１５０μｍ以下であってもよい。
第二の部材上に設けられた接合用銅ペーストは、焼結時の流動及びボイドの発生を抑制する観点から、適宜乾燥させてもよい。乾燥時のガス雰囲気は大気中であってもよく、窒素、希ガス等の無酸素雰囲気中であってもよく、水素、ギ酸等の還元雰囲気中であってもよい。乾燥方法は、常温放置による乾燥であってもよく、加熱乾燥であってもよく、減圧乾燥であってもよい。加熱乾燥又は減圧乾燥には、例えば、ホットプレート、温風乾燥機、温風加熱炉、窒素乾燥機、赤外線乾燥機、赤外線加熱炉、遠赤外線加熱炉、マイクロ波加熱装置、レーザー加熱装置、電磁加熱装置、ヒーター加熱装置、蒸気加熱炉、熱板プレス装置等を用いることができる。乾燥の温度及び時間は、使用した分散媒の種類及び量に合わせて適宜調整してもよい。乾燥の温度及び時間としては、例えば、５０℃以上１８０℃以下で１分以上１２０分間以下乾燥させてもよい。
接合用銅ペースト上に第一の部材を配置する方法としては、例えば、チップマウンター、フリップチップボンダー、カーボン製又はセラミックス製の位置決め冶具が挙げられる。
積層体を加熱処理することで、接合用銅ペーストの焼結を行う。加熱処理には、例えば、ホットプレート、温風乾燥機、温風加熱炉、窒素乾燥機、赤外線乾燥機、赤外線加熱炉、遠赤外線加熱炉、マイクロ波加熱装置、レーザー加熱装置、電磁加熱装置、ヒーター加熱装置、蒸気加熱炉等を用いることができる。
焼結時のガス雰囲気は、焼結体、第一の部材及び第二の部材の酸化抑制の観点から、無酸素雰囲気であってもよい。焼結時のガス雰囲気は、接合用銅ペーストの銅粒子の表面酸化物を除去するという観点から、還元雰囲気であってもよい。無酸素雰囲気としては、例えば、窒素、希ガス等の無酸素ガスの導入、又は真空下が挙げられる。還元雰囲気としては、例えば、純水素ガス中、フォーミングガスに代表される水素及び窒素の混合ガス中、ギ酸ガスを含む窒素中、水素及び希ガスの混合ガス中、ギ酸ガスを含む希ガス中等が挙げられる。
加熱処理時の到達最高温度は、第一の部材及び第二の部材への熱ダメージの低減及び歩留まりを向上させるという観点から、２５０℃以上４５０℃以下であってもよく、２５０℃以上４００℃以下であってもよく、２５０℃以上３５０℃以下であってもよい。到達最高温度が、２００℃以上であれば、到達最高温度保持時間が６０分以下において焼結が充分に進行する傾向にある。
到達最高温度保持時間は、分散媒を全て揮発させ、また、歩留まりを向上させるという観点から、１分以上６０分以下であってもよく、１分以上４０分未満であってもよく、１分以上３０分未満であってもよい。
本実施形態の接合用銅ペーストを用いることにより、積層体を焼結する際、無加圧での接合を行う場合であっても、接合体は充分な接合強度を有することができる。すなわち、接合用銅ペーストに積層した第一の部材による自重のみ、又は第一の部材の自重に加え、０．０１ＭＰａ以下、好ましくは０．００５ＭＰａ以下の圧力を受けた状態で、充分な接合強度を得ることができる。焼結時に受ける圧力が上記範囲内であれば、特別な加圧装置が不要なため歩留まりを損なうこと無く、ボイドの低減、ダイシェア強度及び接続信頼性をより一層向上させることができる。接合用銅ペーストが０．０１ＭＰａ以下の圧力を受ける方法としては、例えば、第一の部材上に重りを載せる方法等が挙げられる。
上記接合体において、第一の部材及び第二の部材の少なくとも一方は、半導体素子であってもよい。半導体素子としては、例えば、ダイオード、整流器、サイリスタ、ＭＯＳゲートドライバ、パワースイッチ、パワーＭＯＳＦＥＴ、ＩＧＢＴ、ショットキーダイオード、ファーストリカバリダイオード等からなるパワーモジュール、発信機、増幅器、ＬＥＤモジュールなどが挙げられる。このような場合、上記接合体は半導体装置となる。得られる半導体装置は充分なダイシェア強度及び接続信頼性を有することができる。
図２は、本実施形態の接合用銅ペーストを用いて製造される半導体装置の一例を示す模式断面図である。図２に示す半導体装置１１０は、リードフレーム５ａ上に、本実施形態に係る接合用銅ペーストの焼結体１を介して接続された半導体素子８と、これらをモールドするモールドレジン７とからなる。半導体素子８は、ワイヤ６を介してリードフレーム５ｂに接続されている。
本実施形態の接合用銅ペーストを用いて製造される半導体装置としては、例えば、ダイオード、整流器、サイリスタ、ＭＯＳゲートドライバ、パワースイッチ、パワーＭＯＳＦＥＴ、ＩＧＢＴ、ショットキーダイオード、ファーストリカバリダイオード等からなるパワーモジュール、発信機、増幅器、高輝度ＬＥＤモジュール、センサーなどが挙げられる。
上記半導体装置は、上述した接合体の製造方法と同様にして製造することができる。すなわち、半導体装置の製造方法は、第一の部材及び第二の部材の少なくとも一方に半導体素子を用い、第一の部材、該第一の部材の自重が働く方向側に、上記接合用銅ペースト、及び第二の部材がこの順に積層された積層体を用意し、接合用銅ペーストを、第一の部材の自重、又は第一の部材の自重及び０．０１ＭＰａ以下の圧力を受けた状態で焼結する工程を備える。例えば、リードフレーム５ａ上に接合用銅ペーストを設け、半導体素子８を配置して加熱する工程が挙げられる。得られる半導体装置は、無加圧での接合を行った場合であっても、充分なダイシェア強度及び接続信頼性を有することができる。本実施形態の半導体装置は、充分な接合力を有し、熱伝導率及び融点が高い銅の焼結体を備えることにより、充分なダイシェア強度を有し、接続信頼性に優れるとともに、パワーサイクル耐性にも優れたものになり得る。
上記の方法は、第二の部材が半導体素子である場合、第一の部材として金属配線又はブロック体等を半導体素子に接合するときの半導体素子へのダメージを低減することができる。半導体素子上に金属配線又はブロック体等の部材を接合した半導体装置について、以下に説明する。
係る半導体装置の一実施形態としては、第一の電極と、第一の電極と電気的に接続されている半導体素子と、金属配線を介して半導体素子と電気的に接続されている第二の電極と、を備え、半導体素子と金属配線との間、及び、金属配線と第二の電極との間に、上記接合用銅ペーストの焼結体を有するものが挙げられる。
図３は、上記の半導体装置の一例を示す模式断面図である。図３に示される半導体装置２００は、第一の電極２２及び第二の電極２４を有する絶縁基板２１と、第一の電極２２上に上記接合用銅ペーストの焼結体１によって接合された半導体素子２３と、半導体素子２３と第二の電極２４とを電気的に接続する金属配線２５とを備える。金属配線２５と半導体素子２３、及び金属配線２５と第二の電極２４はそれぞれ接合用銅ペーストの焼結体１によって接合されている。また、半導体素子２３は、ワイヤ２７を介して第三の電極２６に接続されている。半導体装置２００は、絶縁基板２１の上記電極等が搭載されている面とは反対側に、銅板２８を備えている。半導体装置２００は、上記構造体が絶縁体２９で封止されている。半導体装置２００は、第一の電極２２上に半導体素子２３を１個有しているが、２個以上有していてもよい。この場合、複数ある半導体素子２３はそれぞれ接合用銅ペーストの焼結体１によって金属配線２５と接合することができる。
図４は、半導体装置の別の例を示す模式断面図である。図４に示される半導体装置２１０は、半導体素子２３と金属配線２５との間にブロック体３０が設けられており、半導体素子２３とブロック体３０、及びブロック体３０と金属配線２５がそれぞれ接合用銅ペーストの焼結体１によって接合されていること以外は、図３に示される半導体装置２００と同様の構成を有する。なお、ブロック体３０の位置は適宜変更でき、例えば、第一の電極２２と半導体素子２３との間に設けられていてもよい。
図５は、半導体装置の別の例を示す模式断面図である。図５に示される半導体装置２２０は、第一の電極２２上に、半導体素子２３及びブロック体３０並びにこれらを接合する接合用銅ペーストの焼結体１が更に設けられていること以外は、図４に示される半導体装置２１０と同様の構成を有する。半導体装置２２０は、第一の電極２２上に半導体素子を２個有しているが、３個以上有していてもよい。この場合も、３個以上ある半導体素子２３はそれぞれブロック体３０を介して接合用銅ペーストの焼結体１によって金属配線２５と接合することができる。なお、ブロック体３０の位置は適宜変更でき、例えば、第一の電極２２と半導体素子２３との間に設けられていてもよい。
絶縁基板２１としては、例えば、アルミナ、窒化アルミ、窒化珪素等のセラミックス、高熱伝導粒子／樹脂コンポジット、ポリイミド樹脂、ポリマレイミド樹脂などが挙げられる。
第一の電極２２、第二の電極２４及び第三の電極２６を構成する金属としては、例えば、銅、ニッケル、銀、金、パラジウム、白金、鉛、錫、コバルト等が挙げられる。これらの金属は、１種を単独で使用してもよく、２種以上を組み合わせて使用してもよい。また、電極は、接合用銅ペーストの焼結体１と接する面に上記金属を含む合金を有していてもよい。合金に用いられる金属としては、上記金属の他に、亜鉛、マンガン、アルミニウム、ベリリウム、チタン、クロム、鉄、モリブデン等が挙げられる。
金属配線としては、帯状、板状、立方体状、円筒状、Ｌ字状、コ字状、へ字状等の形状を有する金属フレームなどが挙げられる。金属配線の材質としては、例えば、銀、銅、鉄、アルミニウム、モリブデン、タングステン、タンタル、ニオブ、或いはこれらの合金が挙げられる。また、金属配線は、幅が１μｍ～３０μｍであってもよく、厚みが２０μｍ～５ｍｍであってもよい。
ブロック体としては、熱伝導性及び導電性に優れるものが好ましく、例えば、銀、銅、鉄、アルミニウム、モリブデン、タングステン、タンタル、ニオブ、或いはこれらの合金を用いることができる。半導体素子上にブロック体を設けることで、放熱性が更に向上する。ブロック体の数は適宜変更することができる。
絶縁体２９としては、例えば、シリコーンゲル、ポリマレイミド樹脂、ポリイミド樹脂、ポリアミドイミド樹脂等が挙げられる。
図３～５に示される半導体装置は、大容量で高信頼性を要求されるパワーモジュールに用いることができる。
図３～５に示される半導体装置は、例えば、第一の電極及び第二の電極を備える絶縁基板を用意し、第一の電極上に接合用銅ペースト、半導体素子、必要に応じて更に接合用銅ペースト、ブロック体、接合用銅ペーストを、第一の電極側からこの順に設け、第二の電極上に接合用銅ペーストを設け、半導体素子又はブロック体上の接合用銅ペースト及び第二の電極上の接合用銅ペースト上に、これらの接合用銅ペーストを架橋するように金属配線を配置する工程と、接合用銅ペーストを、各部材の自重又は各部材の自重及び０．０１ＭＰａ以下の圧力を受けた状態で焼結する工程とを備える方法により製造することができる。
このような製造方法によれば、無加圧で半導体装置を製造することができるため、ブリッジ部を有する金属配線を変形することなく接合できることに加え、半導体素子上に半導体素子よりも面積の小さい部材を接合する場合であっても半導体素子に対するダメージをより軽減することができる。
図６は、半導体装置の更に別の例を示す模式断面図である。図６に示される半導体装置３００は、第一の電極２２と、第一の電極２２上に接合用銅ペーストの焼結体１によって接合された半導体素子２３と、半導体素子２３と第二の電極２４とを電気的に接続する金属配線２５とを備える。金属配線２５と半導体素子２３、及び金属配線２５と第二の電極２４はそれぞれ接合用銅ペーストの焼結体１によって接合されている。また、半導体素子２３は、ワイヤ２７を介して第三の電極２６に接続されている。半導体装置３００は、上記構造体が封止材３１で封止されている。半導体装置３００は、第一の電極２２上に半導体素子２３を１個有しているが、２個以上有していてもよい。この場合、複数ある半導体素子２３はそれぞれ接合用銅ペーストの焼結体１によって金属配線２５と接合することができる。
図７は、半導体装置の別の例を示す模式断面図である。図７に示す半導体装置３１０は、半導体素子２３と金属配線２５との間にブロック体３０が設けられており、半導体素子２３とブロック体３０、及びブロック体３０と金属配線２５がそれぞれ接合用銅ペーストの焼結体１によって接合されていること以外は、図６に示される半導体装置３００と同様の構成を有する。なお、ブロック体３０の位置は適宜変更でき、例えば、第一の電極２２と半導体素子２３との間に設けられていてもよい。
図８は、半導体装置の別の例を示す模式断面図である。図８に示される半導体装置３２０は、第一の電極２２上に、半導体素子２３及びブロック体３０並びにこれらを接合する接合用銅ペーストの焼結体１が更に設けられていること以外は、図７に示される半導体装置３１０と同様の構成を有する。半導体装置３２０は、第一の電極２２上に半導体素子を２個有しているが、３個以上有していてもよい。この場合も、３個以上ある半導体素子２３はそれぞれブロック体３０を介して接合用銅ペーストの焼結体１によって金属配線２５と接合することができる。なお、ブロック体３０の位置は適宜変更でき、例えば、第一の電極２２と半導体素子２３との間に設けられていてもよい。
図６～８に示される第一の電極２２及び第二の電極２４は、リードフレーム、銅板、銅・モリブデン焼結体等であってもよい。
封止材３１としては、例えば、耐熱性固形封止材、高熱伝導コンポジット等が挙げられる。
接合用銅ペーストの焼結体１は、半導体装置２００～２２０で説明したものと同様にすることができる。
図６～８に示す実施形態の半導体装置は、第一の電極及び第二の電極としてリードフレーム等を採用することで、小型化したパワーモジュールに用いることができる。このような半導体装置は、上述した半導体装置の製造方法と同様にして製造することができる。
更に、半導体素子上にブロック体を接合した構造を有する半導体装置の別の実施形態について説明する。
上記の半導体装置としては、第一の熱伝導部材と、第二の熱伝導部材と、第一の熱伝導部材及び第二の熱伝導部材の間に配置される半導体素子と、を備え、第一の熱伝導部材と半導体素子との間、及び、半導体素子と第二の熱伝導部材との間のうちの少なくとも一方の間に、上記接合用銅ペーストの焼結体を有するものが挙げられる。
図９は、本実施形態の一例を示す模式断面図である。図９に示す半導体装置４００は、第一の熱伝導部材３２と、第一の熱伝導部材３２上に接合用銅ペーストの焼結体１を介して接合された半導体素子２３と、半導体素子２３上に接合用銅ペーストの焼結体１を介して接合されたブロック体３０と、ブロック体３０上に接合用銅ペーストの焼結体１を介して接合された第二の熱伝導部材３３と、を備える。半導体素子２３は、ワイヤ３５を介して電極３４に接続されている。半導体装置４００は、第一の熱伝導部材３２と第二の熱伝導部材の間が封止材３１で封止されている。半導体装置４００は、半導体素子を２個有しているが、１個又は３個以上有していてもよく、ブロック体の数も適宜変更することができる。なお、ブロック体３０の位置は適宜変更でき、例えば、第一の電極２２と半導体素子２３との間に設けられていてもよい。
熱伝導部材は、半導体素子２３から発生した熱を外部へ放出する機能、及び半導体素子を外部と電気的に接続するための電極としての機能を併せ持つものである。このような熱伝導部材には、例えば、銅、アルミニウム、又はこれらの合金が用いられる。
図９に示す半導体装置は、半導体素子の両面側に熱伝導部材を備えることで、放熱性に優れる両面冷却構造を有することができる。このような半導体装置は、第一の熱伝導部材上に接合用銅ペースト、半導体素子、接合用銅ペースト、ブロック体、接合用銅ペースト、第二の熱伝導部材を、第一の熱伝導部材側からこの順に積層した積層体を用意し、接合用銅ペーストを、各部材の自重又は各部材の自重及び０．０１ＭＰａ以下の圧力を受けた状態で焼結する工程を備える方法により、製造することができる。なお、上記積層体は、上記とは逆の順に積層されたものであってもよい。
以下、実施例により本発明をさらに具体的に説明する。ただし、本発明は以下の実施例に限定されるものではない。
（調製例１）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）０．３５ｇ及びイソボルニルシクロヘキサノール（ＭＴＰＨ、日本テルペン化学株式会社製）０．８５ｇと、サブマイクロ銅粒子としてＣＨ－０２００（表面処理剤：ラウリン酸、三井金属鉱業株式会社製）３．５２ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）５．２８ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。密栓をしたポリ瓶を、自転公転型攪拌装置（Ｐｌａｎｅｔａｒｙ Ｖａｃｕｕｍ Ｍｉｘｅｒ ＡＲＶ－３１０、株式会社シンキー製）を用いて、２０００ｍｉｎ－１（２０００回転／分）で２分間撹拌した。その後、混合液を超音波ホモジナイザー（ＵＳ－６００、日本精機株式会社製）により１９．６ｋＨｚ、６００Ｗ、１分間処理した。次いで、密栓したポリ瓶を自転公転型攪拌装置（Ｐｌａｎｅｔａｒｙ Ｖａｃｕｕｍ Ｍｉｘｅｒ ＡＲＶ－３１０、株式会社シンキー製）を用いて、２０００ｍｉｎ－１（２０００回転／分）で２分間撹拌した。この混合液を接合用銅ペースト１とした。
（調製例２）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）０．４４ｇ及びイソボルニルシクロヘキサノール（ＭＴＰＨ、日本テルペン化学株式会社製）０．７６ｇと、サブマイクロ銅粒子としてＣＨ－０２００（表面処理剤：ラウリン酸、三井金属鉱業株式会社製）４．４０ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）４．４０ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト２を調製した。
（調製例３）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）０．５２ｇ及びイソボルニルシクロヘキサノール（ＭＴＰＨ、日本テルペン化学部式会社製）０．６８ｇと、サブマイクロ銅粒子としてＣＨ－０２００（表面処理剤：ラウリン酸、三井金属鉱業株式会社製）５．２８ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）３．５２ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト３を調製した。
（調製例４）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）０．６１ｇ及びイソボルニルシクロヘキサノール（ＭＴＰＨ、日本テルペン株式会社製）０．５９ｇと、サブマイクロ銅粒子としてＣＨ－０２００（表面処理剤：ラウリン酸、三井金属鉱業株式会社製）６．１６ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）２．６４ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト４を調製した。
（調製例５）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）０．７８ｇ及びイソボルニルシクロヘキサノール（ＭＴＰＨ、日本テルペン化学株式会社製）０．４２ｇと、サブマイクロ銅粒子としてＣＨ－０２００（表面処理剤：ラウリン酸、三井金属鉱業株式会社製）７．９１ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）０．８８ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト５を調製した。
（調製例６）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）０．９０ｇと、サブマイクロ銅粒子としてＣＨ－０２００（表面処理剤：ラウリン酸、三井金属鉱業株式会社製）６．４０ｇと、マイクロ銅粒子として３Ｌ３（福田金属箔粉工業株式会社製）２．７５ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト６を調製した。
（調製例７）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）０．９０ｇと、サブマイクロ銅粒子としてＣＨ－０２００（表面処理剤：ラウリン酸、三井金属鉱業株式会社製）４．５８ｇと、マイクロ銅粒子として１１１０Ｆ（三井金属鉱業株式会社製）４．５８ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト７を調製した。
（調製例８）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）０．６１ｇ及びイソボルニルシクロヘキサノール（ＭＴＰＨ、日本テルペン化学株式会社製）０．５９ｇと、サブマイクロ銅粒子としてＣＨ－０２００（表面処理剤：ラウリン酸、三井金属鉱業株式会社製）６．１６ｇと、マイクロ銅粒子としてＣｕ－ＨＷＱ３．０μｍ（福田金属箔粉工業株式会社製）２．６４ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト８を調製した。
（調製例９）
分散媒としてα－テルピネオール６.１ｇ及びイソボルニルシクロヘキサノール（ＭＴＰＨ、日本テルペン化学株式会社製）０．５９ｇと、サブマイクロ銅粒子としてＨＴ－１４（表面処理剤不含，三井金属鉱業株式会社製）６．１６ｇと、表面処理剤としてラウリン酸（和光純薬工業株式会社製）０．５８ｇと、を混合し、自動乳鉢で１０分混合して混合液を調製した。その後、混合液を超音波ホモジナイザー（ＵＳ－６００、日本精機株式会社製）により１９．６ｋＨｚ、６００Ｗ、２分間処理し、得られたペースト状組成物をナイロンメッシュ（ボルティングクロス３５５Ｔ、アズワン株式会社製）に通し、ＨＴ－１４ペースト状組成物を得た。ＨＴ－１４ペースト状組成物７．３６ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）２．６４ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト９を調製した。
（調製例１０）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）０．９４ｇ及びイソボルニルシクロヘキサノール（ＭＴＰＨ、日本テルペン化学株式会社製）０．２６ｇと、サブマイクロ銅粒子としてＣＨ－０２００（表面処理剤：ラウリン酸、三井金属鉱業株式会社製）２．６４ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）６．１６ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト１０を調製した。
（調製例１１）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）０．７８ｇ及びイソボルニルシクロヘキサノール（ＭＴＰＨ、日本テルペン化学株式会社製）０．４２ｇと、サブマイクロ銅粒子としてＣＨ－０２００（表面処理剤：ラウリン酸、三井金属鉱業株式会社製）７．９２ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）０．８８ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト１１を調製した。
（調製例１２）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）１．２０ｇと、サブマイクロ銅粒子としてＣＴ－５００（表面処理剤：不明、三井金属鉱業株式会社製）７．００ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）３．００ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト１２を調製した。
（調製例１３）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）１．２０ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）８．８０ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト１３を調製した。
（調製例１４）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）０．２２ｇ及びイソボルニルシクロヘキサノール（ＭＴＰＨ、日本テルペン化学株式会社製）１．１２ｇと、サブマイクロ銅粒子としてＣＨ－０２００（表面処理剤：ラウリン酸、三井金属鉱業株式会社製）０．８８ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）７．９２ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト１４を調製した。
（調製例１５）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）１．２０ｇと、サブマイクロ銅粒子としてＣＨ－０２００（表面処理剤：ラウリン酸、三井金属鉱業株式会社製）８．８０ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト１５を調製した。
（調製例１６）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）１．５０ｇと、銅粒子としてＣＳ－１０（表面処理剤：不明、三井金属鉱業株式会社製、５０％体積平均粒径：１．１μｍ、粒径が０．１２～０．８μｍである粒子の割合（質量％）：１８％）５．９５ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）２．５５ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト１６を調製した。
（調製例１７）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）１．０６ｇと、銅粒子としてＣｕ－ＨＷＱ１．５μｍ（表面処理剤：なし、福田金属箔粉工業株式会社製、５０％体積平均粒径：１．７μｍ、粒径が０．１２～０．８μｍである粒子の割合（質量％）：１１％）６．３７ｇと、マイクロ銅粒子としてＭＡ－Ｃ０２５（三井金属鉱業株式会社製）２．７３ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト１７を調製した。
（調製例１８）
分散媒としてα－テルピネオール（和光純薬工業株式会社製）０．６７ｇ及びイソボルニルシクロヘキサノール（ＭＴＰＨ、日本テルペン化学株式会社製）０．６０ｇと、マイクロ銅粒子としてＣｕ－ＨＷＱ３．０μｍ（表面処理剤：なし、福田金属箔粉工業株式会社製、５０％体積平均粒径：３μｍ、粒径が０．１２～０．８μｍである粒子の割合（質量％）：０．３％）６．１７ｇと、ＭＡ－Ｃ０２５（三井金属鉱業株式会社製）２．６４ｇと、をメノウ乳鉢で乾燥粉がなくなるまで混練し、混合液をポリ瓶に移した。この混合液を用いたこと以外は、調製例１と同様の方法を行い、接合用銅ペースト１８を調製した。
＜接合体の製造＞
（実施例１～７、９～１１、１６、参考例８）
接合用銅ペースト１～１２を用いて、以下の方法に従って接合体を製造した。接合体のダイシェア強度は、後述する方法により測定した。
１９ｍｍ×２５ｍｍの銅板（厚み：３ｍｍ）上に３ｍｍ×３ｍｍ正方形の開口を３行３列有するステンレス製のメタルマスク（厚さ：１００μｍ）を載せ、メタルスキージを用いたステンシル印刷により接合用銅ペーストを塗布した。塗布した接合用銅ペースト上に、２ｍｍ×２ｍｍの被着面がニッケルめっきされた銅ブロック（厚み：２５０μｍ）を載せ、ピンセットで軽く押さえた。これをチューブ炉（株式会社エイブイシー製）にセットし、アルゴンガスを３Ｌ／ｍｉｎで流して空気をアルゴンガスに置換した。その後、水素ガスを３００ｍｌ／ｍｉｎで流しながら、１０分間昇温した。昇温後、最高到達温度３５０℃、最高到達温度保持時間１０分間の条件で焼結処理して、銅板とニッケルめっきされた銅ブロックとを接合した接合体を得た。焼結後、アルゴンガスを０．３Ｌ／ｍｉｎに換えて冷却し、５０℃以下で接合体を空気中に取り出した。
（実施例１２）
接合用銅ペースト４を用いて、以下の方法に従って接合体を製造した。接合体のダイシェア強度は、後述する方法により測定した。
１９ｍｍ×２５ｍｍの銅板（厚み：３ｍｍ）上に３ｍｍ×３ｍｍ正方形の開口を３行３列有するステンレス製のメタルマスク（厚さ：１００μｍ）を載せ、メタルスキージを用いたステンシル印刷により接合用銅ペーストを塗布した。塗布した接合用銅ペースト上に、２ｍｍ×２ｍｍの被着面が金めっきされた銅ブロック（厚み：２５０μｍ）を載せ、ピンセットで軽く押さえた。これをチューブ炉（株式会社エイブイシー製）にセットし、アルゴンガスを３Ｌ／ｍｉｎで流して空気をアルゴンガスに置換した。その後、水素ガスを３００ｍｌ／ｍｉｎで流しながら、１０分間昇温した。昇温後、最高到達温度３５０℃、最高到達温度保持時間１０分間の条件で焼結処理して、銅板と金めっきされた銅ブロックとを接合した接合体を得た。焼結後、アルゴンガスを０．３Ｌ／ｍｉｎに換えて冷却し、５０℃以下で接合体を空気中に取り出した。
（実施例１３）
接合用銅ペースト４を用いて、以下の方法に従って接合体を製造した。接合体のダイシェア強度は、後述する方法により測定した。
１９ｍｍ×２５ｍｍの銅板（厚み：３ｍｍ）上に３ｍｍ×３ｍｍ正方形の開口を３行３列有するステンレス製のメタルマスク（厚さ：１００μｍ）を載せ、メタルスキージを用いたステンシル印刷により接合用銅ペーストを塗布した。塗布した接合用銅ペースト上に、２ｍｍ×２ｍｍの被着面がニッケルめっきされた銅ブロック（厚み：２５０μｍ）を載せ、ピンセットで軽く押さえた。この上に１５ｍｍ×１５ｍｍのＳＵＳブロック（重量：１５ｇ）を９枚の２ｍｍ×２ｍｍの被着面がニッケルめっきされた銅ブロック（厚み：２５０μｍ）に重なるように静置し、これをチューブ炉（株式会社エイブイシー製）にセットし、アルゴンガスを３Ｌ／ｍｉｎで流して空気をアルゴンガスに置換した。その後、水素ガスを３００ｍｌ／ｍｉｎで流しながら、１０分間昇温した。昇温後、最高到達温度３５０℃、最高到達温度保持時間１０分間の条件で焼結処理して、銅板とニッケルめっきされた銅ブロックとを接合した接合体を得た。焼結後、アルゴンガスを０．３Ｌ／ｍｉｎに換えて冷却し、５０℃以下で接合体を空気中に取り出した。
（実施例１４）
接合用銅ペースト４を用いて、以下の方法に従って接合体を製造した。接合体のダイシェア強度は、後述する方法により測定した。
１９ｍｍ×２５ｍｍの銅板（厚み：３ｍｍ）上に３ｍｍ×３ｍｍ正方形の開口を３行３列有するステンレス製のメタルマスク（厚さ：１００μｍ）を載せ、メタルスキージを用いたステンシル印刷により接合用銅ペーストを塗布した。塗布した接合用銅ペースト上に、２ｍｍ×２ｍｍの被着面がニッケルめっきされた銅ブロック（厚み：２５０μｍ）を載せ、これをチューブ炉（株式会社エイブイシー製）にセットし、アルゴンガスを３Ｌ／ｍｉｎで流して空気をアルゴンガスに置換した。その後、水素ガスを３００ｍｌ／ｍｉｎで流しながら、１０分間昇温した。昇温後、最高到達温度２５０℃、最高到達温度保持時間６０分の条件で焼結処理して、銅板とニッケルめっきされた銅ブロックとを接合した接合体を得た。焼結後、アルゴンガスを０．３Ｌ／ｍｉｎに換えて冷却し、５０℃以下で接合体を空気中に取り出した。
（実施例１５）
接合用銅ペースト４を用いて、以下の方法に従って接合体を製造した。接合体のダイシェア強度は、後述する方法により測定した。
１９ｍｍ×２５ｍｍの銅板（厚み：３ｍｍ）上に３ｍｍ×３ｍｍ正方形の開口を３行３列有するステンレス製のメタルマスク（厚さ：１００μｍ）を載せ、メタルスキージを用いたステンシル印刷により接合用銅ペーストを塗布した。塗布した接合用銅ペースト上に、２ｍｍ×２ｍｍの被着面がニッケルめっきされた銅ブロック（厚み：２５０μｍ）を載せ、これをチューブ炉（株式会社エイブイシー製）にセットし、アルゴンガスを３Ｌ／ｍｉｎで流して空気をアルゴンガスに置換した。その後、水素ガスを３００ｍｌ／ｍｉｎで流しながら、２０分間昇温した。昇温後、最高到達温度４５０℃、最高到達温度保持時間１０分間の条件で焼結処理して銅板とニッケルめっきされた銅ブロックとを接合した接合体を得た。焼結後、アルゴンガスを０．３Ｌ／ｍｉｎに換えて冷却し、５０℃以下で接合体を空気中に取り出した。
（比較例１～６）
接合用銅ペースト１３～１８を用いたこと以外は、実施例１と同様の方法により、接合体を製造した。接合体のダイシェア強度は、後述する方法により測定した。
＜測定方法＞
（ダイシェア強度）
接合体の接合強度は、ダイシェア強度により評価した。接合体を、ＤＳ－１００ロードセルを装着した万能型ボンドテスタ（４０００シリーズ、ＤＡＧＥ社製）を用い、測定スピード５ｍｍ／ｍｉｎ、測定高さ５０μｍで銅ブロックを水平方向に押し、接合体のダイシェア強度を測定した。８個の接合体を測定した値の平均値をダイシェア強度とした。
（５０％体積平均粒径）
島津ナノ粒子径分布測定装置（ＳＡＬＤ－７５００ｎａｎｏ、株式会社島津製作所製）と付属のソフトウェア（ＷｉｎｇＳＡＬＤＩＩ－７５００－ ｆｏｒ Ｊａｐａｎｅｓｅ Ｖ３．、株式会社島津製作所製）を用いて、以下の（１）～（５）に従って５０％体積平均粒径を測定した。
（１）ソフトウェアの設定
測定装置付属のパソコンでＷｉｎｇＳＡＬＤＩＩ－７５００－ ｆｏｒ Ｊａｐａｎｅｓｅ Ｖ３．１を起動し、マニュアルを押し装置の初期化を行った。初期化が終わった後に、保存ファイル名を指定し「次へ」をクリックし、測定条件及び粒子径分布計算条件を以下のように設定し、「次へ」をクリックした。
（測定条件）
・回折／散乱光の検出
平均回数（測定回数：１）：１２８、測定回数：１、測定間隔（秒）：２
・測定吸光範囲
最大値：０．２、最小値：０
・ブランク領域／測定領域
ブランク測定許容変動最大値：１５０、測定最適範囲（ＭＡＸ）：４５０００、測定最適範囲（ＭＩＮ）：１５０００
（粒子径分布計算条件）
屈折率の選択：参照試料／順金属／半導体など（固体値）
サンプルの物質：４ Ｃｏｐｐｅｒ（銅）
屈折率の選択：１．１８－２．２１、「側方／後方センサを評価する」にチェックを入れた
（２）ブランク測定
島津ナノ粒子径分布測定装置ＳＡＬＤ－７５００ｎａｎｏ用回分セル（ＳＡＬＤ－ＢＣ７５、株式会社島津製作所製）をＳＡＬＤ－７５００ｎａｎｏに取り付けて測定を行った。ＳＡＬＤ－ＢＣ７５に付属のロート付き回分セル（部品番号Ｓ３４７－６１０３０－４１、株式会社島津製作所製、以下「回分セル」という。）内にα－テルピネオール(和光純薬工業株式会社製)を回分セルの２つの標線の間に収まるようにスポイトで滴下した。ＷｉｎｇＳＡＬＤＩＩ－７５００－ ｆｏｒ Ｊａｐａｎｅｓｅ Ｖ３．の画面上から「診断」、「調整」を選択し、位置センサー出力が装置許容範囲内であることを確認した。「キャンセル」をクリックし元の画面に戻り、ブランク測定を選択し測定を行った。
（３）測定溶液の調製
ＳＡＬＤ－ＢＣ７５に付属の回分セルホルダ（部品番号Ｓ３４７－６２３０１、株式会社島津製作所製）のかくはんレバー上に測定したい接合用銅ペーストを２ｍｇ載せ、ロート付き回分セルにセットした。次に、ＷｉｎｇＳＡＬＤＩＩ－７５００－ ｆｏｒ Ｊａｐａｎｅｓｅ Ｖ３．の画面上から「スターラ」を選択し、１５分間撹拌を行った。
（４）測定
撹拌後、ＷｉｎｇＳＡＬＤＩＩ－７５００－ ｆｏｒ Ｊａｐａｎｅｓｅ Ｖ３．の画面上から「測定」を選択し測定を行った。（１）～（４）の操作を４回繰り返し、４回測定した。
（５）統計
ＷｉｎｇＳＡＬＤＩＩ－７５００－ ｆｏｒ Ｊａｐａｎｅｓｅ Ｖ３．を起動し、「開く」をクリックし、測定したファイルを選択し、ＷｉｎｇＳＡＬＤＩＩ－７５００－ ｆｏｒ Ｊａｐａｎｅｓｅ Ｖ３．の画面上に測定データを表示した。「重ね描き」をクリックし、画面下段に５０．０００％径を表示し、４回の平均値を５０％体積平均粒径とした。
表１～３には、実施例及び比較例の結果を示す。
Figure 0007359267000002
Figure 0007359267000003
実施例及び比較例を比較すると、サブマイクロ銅粒子及びマイクロ銅粒子の質量割合がダイシェア強度に影響を与えていることが分かる。これは、マイクロ銅粒子が増加しすぎると、焼結銅層の充填率が低下し、焼結体に空隙が多く発生しやすくなりダイシェア強度が低下したと考えられる。一方、サブマイクロ銅粒子が増加しすぎると、体積収縮により焼結体に空隙が多く発生しやすくなりダイシェア強度が低下したと考えられる。また、実施例の結果から、サブマイクロ銅粒子とマイクロ銅粒子との質量割合が適切であれば、接合用銅ペーストの焼結体は、金、ニッケル、銅のいずれとも強固に接合し、良好なダイシェア強度を示すことが分かる。また、実施例１３では、接合用銅ペーストに対し、銅ブロックの自重に加え、０．００４２ＭＰａの圧力がかかる条件で接合体を製造した結果、接合時に空隙が押しつぶされ空隙が減少し、より強固に接合できたためダイシェア強度が増加したと考えられる。実施例１５では、到達最高温度が４５０℃であることにより、実施例４と比べて、接合用銅ペーストの焼結が進んだためダイシェア強度が更に良好になったと考えられる。比較例４～６では、サブマイクロ銅粒子の体積平均粒径が大きすぎることで、接合用銅ペーストの焼結性が低下したため、接合体のダイシェア強度が低下したと考えられる。
（断面モルフォロジ観察）
接合体をカップ内にサンプルクリップ（Ｓａｍｐｌｋｌｉｐ Ｉ、Ｂｕｅｈｌｅｒ社製）で固定し、周囲にエポキシ注形樹脂（エポマウント、リファインテック株式会社製）をサンプル全体が埋まるまで流し込み、真空デシケータ内に静置し、１分間減圧して脱泡した。その後、室温（２５℃）下１０時間放置してエポキシ注形樹脂を硬化した。ダイヤモンド切断ホイール（１１－３０４、リファインテック株式会社製）をつけたリファインソー・ロー（ＲＣＡ－００５、リファインテック株式会社製）を用い、注形した接合体の観察したい断面付近で切断した。耐水研磨紙（カーボマックペーパー、リファインテック株式会社製）をつけた研磨装置（Ｒｅｆｉｎｅ Ｐｏｌｉｓｈｅｒ Ｈｖ、リファインテック株式会社製）で断面を削りシリコンチップにクラックの無い断面を出し、さらに余分な注形樹脂を削りＣＰ（クロスセクションポリッシャ）加工機にかけられるサイズに仕上げた。切削加工したサンプルをＣＰ加工機（ＩＭ４０００、株式会社日立ハイテクノロジーズ製）で加速電圧６ｋＶ、アルゴンガス流量０．０７～０．１ｃｍ３／ｍｉｎ、処理時間２時間の条件でクロスセクションポリッシングを行って断面加工を行った。断面にスパッタ装置（ＩＯＮ ＳＰＵＴＴＥＲ、株式会社日立ハイテクノロジーズ製）を用いて白金を１０ｎｍの厚みでスパッタしてＳＥＭ観察用のサンプルとした。このＳＥＭ用サンプルをＳＥＭ装置（ＥＳＥＭ ＸＬ３０、Ｐｈｉｌｉｐｓ社製）により、接合体の断面を印加電圧１０ｋＶで観察した。
図１０には、実施例１の接合体の断面のＳＥＭ像を示す。図１１には、実施例１２の接合体の断面のＳＥＭ像を示す。図１２には、実施例１３の断面のＳＥＭ像を示す。図１３には、比較例２の接合体の断面のＳＥＭ像を示す。図１０～１２から、接合用銅ペーストの焼結体は、銅板９、金めっきされた銅ブロック１２及びニッケルめっきされた銅ブロック１３と、マイクロ銅粒子の焼結体１０及びサブマイクロ銅粒子の焼結体１１を介して、接合できていることが分かる。また、図１０～１２から、サブマイクロ銅粒子とマイクロ銅粒子との質量割合が適切である場合、マイクロ銅粒子が被着面に対し、略平行に配向し、その隙間をサブマイクロ銅粒子が埋めていることが示された。一方、図１３から、サブマイクロ銅粒子がマイクロ銅粒子に対して少なすぎる場合、マイクロ銅粒子間の隙間を充分に埋めることができていないことが示された。このような構造の違いにより、比較例２の接合体では充分なダイシェア強度が得られていないと考えられる。
１…接合用銅ペーストの焼結体、２…第一の部材、３…第二の部材、５ａ、５ｂ…リードフレーム、６…ワイヤ、７…モールドレジン、８…半導体素子、９…銅板、１０…マイクロ銅粒子の焼結体、１１…サブマイクロ銅粒子の焼結体、１２…金めっきされた銅ブロック、１３…ニッケルめっきされた銅ブロック、１００…接合体、１１０…半導体装置、２１…絶縁基板、２２…第一の電極、２３…半導体素子、２４…第二の電極、２５…金属配線、２６…第三の電極、２７…ワイヤ、２８…銅板、２９…絶縁体、３０…ブロック体、３１…封止材、３２…第一の熱伝導部材、３３…第二の熱伝導部材、３４…電極、３５…ワイヤ、２００…半導体装置、２１０…半導体装置、２２０…半導体装置、３００…半導体装置、３１０…半導体装置、３２０…半導体装置、４００…半導体装置。

Claims (8)

  1. 金属粒子と、分散媒と、を含む接合用銅ペーストであって、
    前記金属粒子が、体積平均粒径が０．２μｍ以上０．８μｍ以下であるサブマイクロ銅粒子と、体積平均粒径が２μｍ以上５０μｍ以下であるマイクロ銅粒子とを含み、
    前記サブマイクロ銅粒子の含有量及び前記マイクロ銅粒子の含有量の合計が、前記金属粒子の全質量を基準として、８０質量％以上であり、
    前記サブマイクロ銅粒子の含有量が、前記サブマイクロ銅粒子の質量及び前記マイクロ銅粒子の質量の合計を基準として、３０質量％以上９０質量％以下であり、
    前記マイクロ銅粒子が、フレーク状であり、
    前記マイクロ銅粒子の含有量は、前記金属粒子の全質量を基準として、１０質量％以上９０質量％以下であり、
    前記サブマイクロ銅粒子が表面処理剤で処理されており、下記式で算出される前記表面処理剤の処理量が０．０７質量％以上２．１質量％以下である、接合用銅ペースト。
    表面処理剤の処理量（質量％）＝｛（ｎ・Ａ ｐ ・Ｍ ｓ ）／（Ｓ Ｓ ・Ｎ Ａ ＋ｎ・Ａ ｐ ・Ｍ ｓ ）｝×１００％
    ［式中、ｎはサブマイクロ銅粒子の表面に付着した分子層数を示し、Ａ ｐ はサブマイクロ銅粒子の比表面積（単位ｍ ２ ／ｇ）を示し、Ｍ ｓ は表面処理剤の分子量（単位ｇ／ｍｏｌ）を示し、Ｓ Ｓ は表面処理剤の最小被覆面積（単位ｍ ２ ／個）を示し、Ｎ Ａ はアボガドロ数を示す。］
  2. 前記表面処理剤が、炭素数８～１６の有機酸である、請求項１に記載の接合用銅ペースト。
  3. 前記表面処理剤が、ラウリン酸である、請求項１に記載の接合用銅ペースト。
  4. 第一の部材、請求項１～３のいずれか一項に記載の接合用銅ペースト、及び第二の部材がこの順に積層されている積層体を用意し、前記接合用銅ペーストを、０．０１ＭＰａ以下の圧力を受けた状態で焼結する工程を備える、接合体の製造方法。
  5. 第一の部材、請求項１～３のいずれか一項に記載の接合用銅ペースト、及び第二の部材がこの順に積層されている積層体を用意し、前記接合用銅ペーストを、０．０１ＭＰａ以下の圧力を受けた状態で焼結する工程を備え、
    前記第一の部材及び前記第二の部材の少なくとも一方が半導体素子である、半導体装置の製造方法。
  6. 第一の部材と、第二の部材と、前記第一の部材と前記第二の部材とを接合する請求項１～３のいずれか一項に記載の接合用銅ペーストの焼結体と、を備える、接合体。
  7. 前記第一の部材及び第二の部材の少なくとも一方が、前記焼結体と接する面に、銅、ニッケル、銀、金及びパラジウムからなる群から選択される少なくとも１種の金属を含む、請求項６に記載の接合体。
  8. 第一の部材と、第二の部材と、前記第一の部材と前記第二の部材とを接合する請求項１～３のいずれか一項に記載の接合用銅ペーストの焼結体と、を備え、
    前記第一の部材及び前記第二の部材の少なくとも一方が半導体素子である、半導体装置。
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JP7067002B2 (ja) * 2017-09-22 2022-05-16 昭和電工マテリアルズ株式会社 半導体装置の製造方法
JP7127269B2 (ja) * 2017-10-23 2022-08-30 昭和電工マテリアルズ株式会社 部材接続方法
EP3703140B1 (en) * 2017-10-24 2023-11-22 Resonac Corporation Method for manufacturing thermoelectric conversion module, thermoelectric conversion module, and binder for thermoelectric conversion module
CN111295741B (zh) * 2017-11-08 2023-09-01 株式会社力森诺科 接合体的制造方法及接合材料
JP6574234B2 (ja) * 2017-12-13 2019-09-11 Ｊｘ金属株式会社 半導体デバイス
JPWO2019188511A1 (ja) * 2018-03-29 2020-12-03 ハリマ化成株式会社 銅ペースト、接合方法および接合体の製造方法
JP7127407B2 (ja) * 2018-07-25 2022-08-30 昭和電工マテリアルズ株式会社 接合用金属ペースト、接合体及び接合体の製造方法
EP3852507A4 (en) * 2018-09-14 2021-11-10 Showa Denko Materials Co., Ltd. ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE ELECTRONIC COMPONENT
SG11202105564QA (en) * 2018-11-29 2021-06-29 Showa Denko Materials Co Ltd Method for producing bonded object and semiconductor device and copper bonding paste
TWI701783B (zh) * 2019-06-03 2020-08-11 日商Ｊｘ金屬股份有限公司 半導體裝置
JP6956766B2 (ja) * 2019-08-07 2021-11-02 Ｊｘ金属株式会社 銅粉ペーストを用いた接合方法
JP6956765B2 (ja) * 2019-08-07 2021-11-02 Ｊｘ金属株式会社 銅粉ペーストを用いた接合方法
JPWO2021060204A1 (ja) * 2019-09-25 2021-04-01
CN114502301A (zh) * 2019-09-30 2022-05-13 昭和电工材料株式会社 接合用铜糊料、接合体的制造方法及接合体
JP7302487B2 (ja) * 2020-01-14 2023-07-04 トヨタ自動車株式会社 複合粒子、及び複合粒子の製造方法
JP7391678B2 (ja) * 2020-01-24 2023-12-05 大陽日酸株式会社 接合材
CN111415767B (zh) * 2020-03-06 2021-09-03 深圳第三代半导体研究院 一种基于多维金属纳米材料膏体及其互连工艺
TW202140691A (zh) * 2020-04-07 2021-11-01 日商昭和電工材料股份有限公司 銅糊、毛細結構的形成方法及熱管
JPWO2022049641A1 (ja) * 2020-09-01 2022-03-10
FR3113774B1 (fr) * 2020-09-03 2023-04-21 Commissariat Energie Atomique Procédé d’interconnexion de composants d’un système électronique par frittage
EP4368317A1 (en) * 2021-07-06 2024-05-15 Resonac Corporation Metal paste for joining, joint, and manufacturing method therefor
JPWO2023282229A1 (ja) * 2021-07-06 2023-01-12

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008062548A1 (en) 2006-11-24 2008-05-29 Nihon Handa Co., Ltd. Pasty metal particle composition and method of joining
JP2010018832A (ja) 2008-07-09 2010-01-28 Nippon Handa Kk 金属製部材用接合剤、金属製部材接合体の製造方法、金属製部材接合体、および電気回路接続用バンプの製造方法
JP2013069687A (ja) 2011-09-20 2013-04-18 Haraeus Materials Technology Gmbh & Co Kg ペースト及びエレクトロニクス構成要素を基材と結合する方法
WO2014129626A1 (ja) 2013-02-22 2014-08-28 古河電気工業株式会社 接続構造体、及び半導体装置

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4928639B1 (ja) 1969-06-17 1974-07-27
JPS506081B1 (ja) 1970-12-09 1975-03-11
US5744557A (en) * 1993-06-16 1998-04-28 Minnesota Mining And Manufacturing Company Energy-curable cyanate/ethylenically unsaturated compositions
US7411719B2 (en) * 1995-07-20 2008-08-12 E Ink Corporation Electrophoretic medium and process for the production thereof
US5611884A (en) * 1995-12-11 1997-03-18 Dow Corning Corporation Flip chip silicone pressure sensitive conductive adhesive
JPH11150135A (ja) * 1997-11-17 1999-06-02 Nec Corp 熱伝導性が良好な導電性ペースト及び電子部品
JP4416373B2 (ja) * 2002-03-08 2010-02-17 株式会社日立製作所 電子機器
WO2004086565A1 (ja) * 2003-03-26 2004-10-07 Jsr Corporation 異方導電性コネクターおよび導電性ペースト組成物、プローブ部材並びにウエハ検査装置およびウエハ検査方法
JP4296347B2 (ja) * 2004-01-19 2009-07-15 Ｄｏｗａエレクトロニクス株式会社 フレーク状銅粉およびその製造法
WO2006076603A2 (en) * 2005-01-14 2006-07-20 Cabot Corporation Printable electrical conductors
US8222116B2 (en) * 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
PL380649A1 (pl) * 2006-09-21 2008-03-31 Maciej Jan Pike-Biegunski Koloid, jego pochodna oraz nanocząsteczki substancji elektroprzewodzącej, sposób ich otrzymywania oraz zastosowania
JP5006081B2 (ja) 2007-03-28 2012-08-22 株式会社日立製作所 半導体装置、その製造方法、複合金属体及びその製造方法
CN100502104C (zh) * 2007-08-27 2009-06-17 李宝峰 用磷酸铁直接锂化制造锂离子电池正极材料磷酸亚铁锂的方法
DE102008039828A1 (de) * 2008-08-27 2010-03-04 W.C. Heraeus Gmbh Steuerung der Porosität von Metallpasten für den druckfreien Niedertemperatursinterprozess
JP5611537B2 (ja) * 2009-04-28 2014-10-22 日立化成株式会社 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置
FR2947481B1 (fr) * 2009-07-03 2011-08-26 Commissariat Energie Atomique Procede de collage cuivre-cuivre simplifie
EP2455179B1 (en) * 2009-07-14 2021-04-14 DOWA Electronics Materials Co., Ltd. Bonding material and bonding method each using metal nanoparticles
US9390829B2 (en) * 2010-01-25 2016-07-12 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
JP4928639B2 (ja) * 2010-03-15 2012-05-09 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法
CN102812520B (zh) * 2010-03-18 2016-10-19 古河电气工业株式会社 导电性糊料和由该糊料得到的导电连接部件
JP5506042B2 (ja) * 2010-07-27 2014-05-28 ハリマ化成株式会社 導電性銅ペースト
CN103260797B (zh) * 2010-12-17 2015-12-02 古河电气工业株式会社 加热接合用材料、加热接合用涂层材料、涂层物以及电子部件的接合方法
JP5687175B2 (ja) * 2011-11-28 2015-03-18 有限会社 ナプラ 微細空間内に機能部分を形成する方法
JP5598739B2 (ja) * 2012-05-18 2014-10-01 株式会社マテリアル・コンセプト 導電性ペースト
JP5980574B2 (ja) * 2012-05-29 2016-08-31 ハリマ化成株式会社 導電性金属厚膜形成用材料および導電性金属厚膜の形成方法
JP6053386B2 (ja) 2012-08-09 2016-12-27 古河電気工業株式会社 電子部品の接合方法
JP6199048B2 (ja) 2013-02-28 2017-09-20 国立大学法人大阪大学 接合材
US20140287159A1 (en) * 2013-03-21 2014-09-25 Intrinsiq Materials, Inc. Conductive paste formulations for improving adhesion to plastic substrates
US20140287158A1 (en) * 2013-03-21 2014-09-25 Intrinsiq Materials, Inc. Performance of conductive copper paste using copper flake
WO2014162990A1 (ja) * 2013-04-02 2014-10-09 昭和電工株式会社 導電性接着剤、異方性導電フィルム及びそれらを使用した電子機器
JP6130209B2 (ja) * 2013-05-14 2017-05-17 Ｄｏｗａエレクトロニクス株式会社 導電膜
JP6303392B2 (ja) * 2013-10-22 2018-04-04 日立化成株式会社 銀ペースト及びそれを用いた半導体装置、並びに銀ペーストの製造方法
WO2015098658A1 (ja) * 2013-12-24 2015-07-02 Dic株式会社 金属ナノ粒子を含有する接合用材料
EP3186320A4 (en) * 2014-08-29 2018-07-25 SDCmaterials, Inc. Composition comprising nanoparticles with desired sintering and melting point temperatures and methods of making thereof
US10333148B2 (en) * 2015-01-29 2019-06-25 Board Of Trustees Of The University Of Arkansas Density modulated thin film electrodes, methods of making same, and applications of same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008062548A1 (en) 2006-11-24 2008-05-29 Nihon Handa Co., Ltd. Pasty metal particle composition and method of joining
JP2010018832A (ja) 2008-07-09 2010-01-28 Nippon Handa Kk 金属製部材用接合剤、金属製部材接合体の製造方法、金属製部材接合体、および電気回路接続用バンプの製造方法
JP2013069687A (ja) 2011-09-20 2013-04-18 Haraeus Materials Technology Gmbh & Co Kg ペースト及びエレクトロニクス構成要素を基材と結合する方法
WO2014129626A1 (ja) 2013-02-22 2014-08-28 古河電気工業株式会社 接続構造体、及び半導体装置

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