JP7357542B2 - 超合金スパッタリングターゲット - Google Patents
超合金スパッタリングターゲット Download PDFInfo
- Publication number
- JP7357542B2 JP7357542B2 JP2019557473A JP2019557473A JP7357542B2 JP 7357542 B2 JP7357542 B2 JP 7357542B2 JP 2019557473 A JP2019557473 A JP 2019557473A JP 2019557473 A JP2019557473 A JP 2019557473A JP 7357542 B2 JP7357542 B2 JP 7357542B2
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- JP
- Japan
- Prior art keywords
- superalloy
- target
- sputtering
- cathodic arc
- arc target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910000601 superalloy Inorganic materials 0.000 title claims description 141
- 238000005477 sputtering target Methods 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 51
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 30
- 239000000843 powder Substances 0.000 claims description 29
- 239000013078 crystal Substances 0.000 claims description 27
- 239000012071 phase Substances 0.000 claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 238000002441 X-ray diffraction Methods 0.000 claims description 14
- 238000002490 spark plasma sintering Methods 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000005275 alloying Methods 0.000 claims description 11
- 229910052715 tantalum Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 238000004663 powder metallurgy Methods 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 239000002244 precipitate Substances 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 238000003786 synthesis reaction Methods 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 13
- 238000010298 pulverizing process Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 65
- 238000000034 method Methods 0.000 description 64
- 238000000576 coating method Methods 0.000 description 51
- 230000008569 process Effects 0.000 description 51
- 239000011248 coating agent Substances 0.000 description 43
- 239000000758 substrate Substances 0.000 description 35
- 230000007704 transition Effects 0.000 description 30
- 230000004888 barrier function Effects 0.000 description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 24
- 229910052760 oxygen Inorganic materials 0.000 description 24
- 239000001301 oxygen Substances 0.000 description 24
- 239000007789 gas Substances 0.000 description 22
- 229910000951 Aluminide Inorganic materials 0.000 description 19
- 238000000151 deposition Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 15
- 230000008021 deposition Effects 0.000 description 14
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 13
- 238000001704 evaporation Methods 0.000 description 13
- 230000008020 evaporation Effects 0.000 description 13
- 239000011651 chromium Substances 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 8
- 239000006104 solid solution Substances 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 238000013507 mapping Methods 0.000 description 7
- 229910001175 oxide dispersion-strengthened alloy Inorganic materials 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000001887 electron backscatter diffraction Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 6
- 230000006911 nucleation Effects 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
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- 230000007797 corrosion Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000005728 strengthening Methods 0.000 description 4
- 239000012720 thermal barrier coating Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
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- 239000002131 composite material Substances 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000010431 corundum Substances 0.000 description 3
- 238000005328 electron beam physical vapour deposition Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000007750 plasma spraying Methods 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 229910010038 TiAl Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002050 diffraction method Methods 0.000 description 2
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- 238000002474 experimental method Methods 0.000 description 2
- 238000010286 high velocity air fuel Methods 0.000 description 2
- 238000007749 high velocity oxygen fuel spraying Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- LLQPHQFNMLZJMP-UHFFFAOYSA-N Fentrazamide Chemical compound N1=NN(C=2C(=CC=CC=2)Cl)C(=O)N1C(=O)N(CC)C1CCCCC1 LLQPHQFNMLZJMP-UHFFFAOYSA-N 0.000 description 1
- 229910000943 NiAl Inorganic materials 0.000 description 1
- 229910000624 NiAl3 Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000007868 Raney catalyst Substances 0.000 description 1
- 229910000564 Raney nickel Inorganic materials 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 229910004490 TaAl Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- RHBRWKIPYGZNMP-UHFFFAOYSA-N [O--].[O--].[O--].[Al+3].[Cr+3] Chemical compound [O--].[O--].[O--].[Al+3].[Cr+3] RHBRWKIPYGZNMP-UHFFFAOYSA-N 0.000 description 1
- CNGGOAOYPQGTLH-UHFFFAOYSA-N [O-2].[O-2].[Mg+2].[Al+3] Chemical compound [O-2].[O-2].[Mg+2].[Al+3] CNGGOAOYPQGTLH-UHFFFAOYSA-N 0.000 description 1
- YAIQCYZCSGLAAN-UHFFFAOYSA-N [Si+4].[O-2].[Al+3] Chemical compound [Si+4].[O-2].[Al+3] YAIQCYZCSGLAAN-UHFFFAOYSA-N 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- QQHSIRTYSFLSRM-UHFFFAOYSA-N alumanylidynechromium Chemical compound [Al].[Cr] QQHSIRTYSFLSRM-UHFFFAOYSA-N 0.000 description 1
- IHNDUGMUECOVKK-UHFFFAOYSA-N aluminum chromium(3+) oxygen(2-) Chemical compound [O-2].[Cr+3].[O-2].[Al+3] IHNDUGMUECOVKK-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000010288 cold spraying Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009510 drug design Methods 0.000 description 1
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- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
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- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910001293 incoloy Inorganic materials 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004482 other powder Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- VSSLEOGOUUKTNN-UHFFFAOYSA-N tantalum titanium Chemical compound [Ti].[Ta] VSSLEOGOUUKTNN-UHFFFAOYSA-N 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000010290 vacuum plasma spraying Methods 0.000 description 1
- 229910001247 waspaloy Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000010284 wire arc spraying Methods 0.000 description 1
- 229910006281 γ-TiAl Inorganic materials 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/02—Compacting only
- B22F3/087—Compacting only using high energy impulses, e.g. magnetic field impulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0433—Nickel- or cobalt-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
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- C—CHEMISTRY; METALLURGY
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- C—CHEMISTRY; METALLURGY
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F01D5/00—Blades; Blade-carrying members; Heating, heat-insulating, cooling or antivibration means on the blades or the members
- F01D5/12—Blades
- F01D5/28—Selecting particular materials; Particular measures relating thereto; Measures against erosion or corrosion
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- B22F3/10—Sintering only
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
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Description
-PVDコーティングユニットに超合金(SA)基板を提供する工程と、
-コーティングユニットのアーク蒸発源のカソードとして超合金ターゲットを提供する工程と、
-基板に基板バイアスをかける工程と、
-超合金ターゲットからの真空アーク蒸着により、基板の表面に超合金の境界面層(IF-1)を蒸着する工程と、
-酸素を含む反応性ガス供給物をコーティングユニットに提供する工程と、
-真空アーク蒸着により、同じ超合金又は異なる金属組成物の遷移層(TL)を蒸着し、ここで、プロセス雰囲気中で反応ガスの分圧を変化させることによって層の酸素含有量を(IF-1)から表面に向かって、例えば、反応性ガスの分圧を上昇及び/又は変化させることにより、層の酸素含有量を(IF-1)から表面に向かって増加させることによって変化させる工程と、
-遷移層(TL)の蒸着と同様に、反応性ガスをより高濃度で含むプロセス雰囲気中での真空アーク蒸着により、遷移層に続いて、遷移層内よりも多量の超合金酸化物又は異なる金属酸化物組成物を含むバリア層(IF-2)を蒸着する工程と、
を含む、コーティング方法を開示することである。
超合金をターゲットとしたアーク電流:80A~250A、
基板バイアス:-20V~-800VDC及びバイポーラパルスバイアス
遷移層の更なるプロセスパラメータは以下の通りであった:
超合金をターゲットとしたアーク電流:80A~200A、
更なる金属組成物をターゲットとしたアーク電流:60A~200A、
基板バイアス:-20V~-800DC、及びユニポーラ及びバイポーラパルス。
境界面層の更なるプロセスパラメータは以下の通りであった:
超合金をターゲットとしたアーク電流:60A~200A;
更なる金属組成物をターゲットとしたアーク電流:60A~220A;
基板バイアス:-20V~-600VDC、好ましくはユニポーラ又はバイポーラパルス。
-超合金ターゲットが、ランダムな結晶粒配向の多結晶構造を有し、
-構造内の平均粒径が20μm未満であり、
-構造内の多孔率が10%未満である、
超合金ターゲットの製造に関する。
-合金粉末を放電プラズマ焼結(SPS)する工程
を含む、製造方法に関する。
-超合金基板と、
-超合金基板の表面の直接上にある、本質的に同じ超合金組成物の境界面層(IF-1)と、それに続く、
-本質的に同じ超合金及び超合金の酸化物、又は異なる金属組成物及び異なる金属酸化物の遷移層(TL)であって、遷移層の酸素含有量は、IF-1からバリア層に向かって増加している、遷移層と、
-超合金酸化物又は異なる金属酸化物のバリア層(IF-2)と、
を含む、超合金ワークピースである。
酸化アルミニウム、酸化アルミニウム-クロム、酸化エルビウム、酸化イットリウム、酸化イットリウム-アルミニウム、酸化マグネシウム-アルミニウム、酸化アルミニウム-ケイ素、酸化ハフニウム-ケイ素
のうちの少なくとも1つ又はそれらの混合物を含んでもよい。
-境界面層(IF-1)
-遷移層(TL)及び
-バリア層(IF-2)
の連続した層からなるボンドコートに関して、
以下のコーティング厚のいずれをも選択できる。
1μm≦dbond≦200μm
境界面層の層厚(IF-1):
0.01μm≦dIF-1≦20μm
遷移層(TL)の層厚:
0.1μm≦dTL≦100μm
バリア層(IF-2)の層厚:
1μm≦dIF-2≦50μm
-構造物の平均結晶粒径は50μm未満、好ましくは20μm未満である。
-粉末冶金製造は、元素粉末の混合物ではなく、合金粉末から開始することが好ましい。
-これにより、SPSプロセスではなく、粉末の製造中に相の合成が行われる。
-そのような製造されたターゲットには組織がない、つまり、それらはランダムな粒子配向によって特徴付けられ(例えば、EBSDで測定)、これは、溶融冶金によって製造されたターゲットとは大きく異なる。
-SPSプロセスによって生成された構造の多孔度は、10%未満、又は好ましくは5%未満に調整される。
-SPSプロセスは、1000~1350℃の温度範囲、好ましくは1100~1300℃の温度範囲で液相の形成を伴うことなく行われる。
放電プラズマ焼結によって製造されたSA-Tの化学組成を、EDXによって調査した。分析する元素の数が多く、この方法に対する感度が異なるため、定量分析は困難である。しかしながら、材料の類似性により(Cを除く)定性的な比較が可能である。表1は、製造されたターゲットの製造時の未使用の表面の結果を表しており、全元素の組成に関する数値を3列目に、粉末組成に対する差異(Δ)の数値を4列目に示す。炭素とタンタルを除いて、元の粉末と組成がかなり合致している。XRD分析によって得られた未使用のターゲット表面の結晶構造を、非反応性プロセスにおけるアーク操作後のターゲット表面と比較した。図2に2θ/ωスキャンを示す。
次の工程では、製造時のターゲットをカソードとして利用し、アークで蒸発させた。蒸発は、表2に記載されている条件下で実施した。非反応性プロセスでは、蒸発中に追加のガスは使用しなかった。このアプローチは、気体原子との多重散乱に起因した、蒸着したコーティングへの液滴の混入を減らす可能性を断念させるものであるが、より高いエネルギーでのコーティングの凝縮を支持する金属蒸気のより高いイオン化度及びより高い運動エネルギーを維持することができる。反応プロセスは酸素のみで行った。酸素流の値は、コーティングのほぼ完全な酸化がもたらされるIF-2(酸化超合金層)が生成されるよう、蒸発する金属原子に対する酸素の比が確実に約4~5になるように選択した。非反応プロセスA及び反応プロセスB後のターゲットの化学組成をEDXで測定し、元の粉末組成に対する差(Δ)と共に表1に示す(5~8列目)。ターゲット表面の分析は、非反応性プロセスから反応性プロセスへのAl及びCrのわずかな減少を示しているが、他のターゲット元素の組成に大きな変化はない。非反応モードでのアーク操作後のターゲット表面のXRDパターンを図2(実線)に示す。未使用のターゲット(点線)と比較して、操作されたターゲットのピークはより狭く、より高い角度に向かってシフトしている。ピークはまた、fcc立方相(Fm-3m)に割り当てることもできる。操作されたターゲットの平均単位格子はわずかに小さく、格子定数は3.584Å(操作前)から3.568Å(操作後)に減少し、半値全幅(FWHM)の減少はターゲット表面上の再結晶プロセスを示している。
表2に示すプロセスAのパラメータを使用して、非反応処理によりコーティングを合成し、ターゲットの化学組成もコーティング内で維持できるかどうかを調査した。EDXによって得られた組成を表3に示し、どちらの場合も、コーティングAは境界面層(IF-1)の組成を有する。EDXが十分に高感度でなく、正確ではないCを除き、分析では、コーティング中で、Al濃度のみが減少を示し、Ti濃度はある程度の減少を示している。SA-S基板上のコーティングの初期XRD分析を実施した。コーティングとSA-Sの格子定数は非常に類似しているため、観測されたブラッグ反射をコーティングに明確に割り当てることはできなかった。そのため、サファイア基板上のコーティングについて測定を繰り返した(図7)。
Claims (10)
- -fcc結晶構造の割合が80から99%の範囲である、ランダムな結晶粒配向の多結晶構造を有し、
-前記構造内の平均粒径が20μm未満であり、
-前記構造内の多孔率が10%未満である、
超合金スパッタリング又はカソードアークターゲットであって、
前記超合金が、コバルトを主要な金属成分とするCo基超合金であり、前記Co基超合金が、合金元素としてCrを含み、前記Co基超合金が、合金元素としてC、W、Ni、Ti、Al、Ir及びTaのうちの少なくとも1つの元素を含み、又は、
前記超合金が、ニッケルを主要な金属成分とするNi基超合金であり、前記Ni基超合金が、合金元素としてCr、Co、Mo、W、Ta、Al、Ti及びCのうちの少なくとも1つの元素を含み、
前記ターゲットが、前記超合金の合金粉末から作られ、
前記ターゲットが、fcc相を有する、前記主要な金属成分とその他の合金元素との金属間相を含み、
前記ターゲットが、Ta及びTiを含む析出物を含む、超合金スパッタリング又はカソードアークターゲット。 - 前記Ni基超合金が、合金元素としてFe、Zr、Nb、Re、Y、V、B及びHfのうちの少なくとも1つの元素をさらに含むことを特徴とする、請求項1に記載の超合金スパッタリング又はカソードアークターゲット。
- 結晶学的コヒーレンス及びエピタキシーに関して、前記超合金スパッタリング又はカソードアークターゲットが主に同じ1つの結晶構造を有することを特徴とする、請求項1又は2に記載の超合金スパッタリング又はカソードアークターゲット。
- 前記超合金が、Ni基超合金又はCo基超合金であり、fcc結晶構造の割合が80~99%の範囲であることを特徴とする、請求項3に記載の超合金スパッタリング又はカソードアークターゲット。
- 未使用のターゲットのXRDパターンが、fcc立方としてインデックス付けできる主要なピークを示し、操作された前記ターゲットのXRDパターンが、前記未使用のターゲット表面で観察されたのと同様のfcc立方相を示すことを特徴とする、請求項1から4のいずれか一項に記載の超合金スパッタリング又はカソードアークターゲット。
- 粉末冶金製造による超合金スパッタリング又はカソードアークターゲットの製造方法であって、前記粉末冶金製造が、超合金の合金粉末から開始し、
-前記合金粉末を放電プラズマ焼結(SPS)する工程
を含み、
前記超合金が、コバルトを主要な金属成分とするCo基超合金であり、前記Co基超合金が、合金元素としてCrを含み、前記Co基超合金が、合金元素としてC、W、Ni、Ti、Al、Ir及びTaのうちの少なくとも1つの元素を含み、又は、
前記超合金が、ニッケルを主要な金属成分とするNi基超合金であり、前記Ni基超合金が、合金元素としてCr、Co、Mo、W、Ta、Al、Ti及びCのうちの少なくとも1つの元素を含み、
前記ターゲットは、
-fcc結晶構造の割合が80から99%の範囲である、ランダムな結晶粒配向の多結晶構造を有し、
-前記構造内の平均粒径が20μm未満であり、
-前記構造内の多孔率が10%未満であり、
前記ターゲットは、fcc相を有する、前記主要な金属成分とその他の合金元素との金属間相を含み、
前記ターゲットは、Ta及びTiを含む析出物を含む、
製造方法。 - 前記放電プラズマ焼結が、液相の形成を伴わずに1000~1350℃の温度範囲で行われることを特徴とする、請求項6に記載の超合金スパッタリング又はカソードアークターゲットの製造方法。
- 前記超合金スパッタリング又はカソードアークターゲットの相の合成が、前記粉末の製造中に行われることを特徴とする、請求項6又は7に記載の超合金スパッタリング又はカソードアークターゲットの製造方法。
- 前記合金粉末が、真空下で2つのグラファイトパンチの間のグラファイトダイで加圧され、DC電流又はパルスDC電流が同時に印加されることを特徴とする、請求項6から8のいずれか一項に記載の超合金スパッタリング又はカソードアークターゲットの製造方法。
- 前記合金粉末が、超合金の中実体を粉砕することにより製造されることを特徴とする、請求項6から9のいずれか一項に記載の超合金スパッタリング又はカソードアークターゲットの製造方法。
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