JP7355598B2 - フォトマスク、電子デバイスの製造方法、および、フォトマスクの製造方法 - Google Patents

フォトマスク、電子デバイスの製造方法、および、フォトマスクの製造方法 Download PDF

Info

Publication number
JP7355598B2
JP7355598B2 JP2019192029A JP2019192029A JP7355598B2 JP 7355598 B2 JP7355598 B2 JP 7355598B2 JP 2019192029 A JP2019192029 A JP 2019192029A JP 2019192029 A JP2019192029 A JP 2019192029A JP 7355598 B2 JP7355598 B2 JP 7355598B2
Authority
JP
Japan
Prior art keywords
photomask
transmission control
transfer
exposure
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019192029A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020067661A5 (zh
JP2020067661A (ja
Inventor
周平 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of JP2020067661A publication Critical patent/JP2020067661A/ja
Publication of JP2020067661A5 publication Critical patent/JP2020067661A5/ja
Application granted granted Critical
Publication of JP7355598B2 publication Critical patent/JP7355598B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2019192029A 2018-10-22 2019-10-21 フォトマスク、電子デバイスの製造方法、および、フォトマスクの製造方法 Active JP7355598B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018198733 2018-10-22
JP2018198733 2018-10-22

Publications (3)

Publication Number Publication Date
JP2020067661A JP2020067661A (ja) 2020-04-30
JP2020067661A5 JP2020067661A5 (zh) 2022-08-29
JP7355598B2 true JP7355598B2 (ja) 2023-10-03

Family

ID=70310460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019192029A Active JP7355598B2 (ja) 2018-10-22 2019-10-21 フォトマスク、電子デバイスの製造方法、および、フォトマスクの製造方法

Country Status (4)

Country Link
JP (1) JP7355598B2 (zh)
KR (1) KR102371333B1 (zh)
CN (1) CN111077725B (zh)
TW (2) TWI821625B (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008122698A (ja) 2006-11-13 2008-05-29 Dainippon Printing Co Ltd プロキシミティ露光用階調マスク
WO2014111983A1 (ja) 2013-01-21 2014-07-24 パナソニック株式会社 フォトマスク及びそれを用いたパターン形成方法
JP2014191323A (ja) 2013-03-28 2014-10-06 Toppan Printing Co Ltd プロキシミティ露光用フォトマスクおよびそれを用いるパターン露光方法
JP2017062462A (ja) 2015-09-26 2017-03-30 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP2018077266A (ja) 2016-11-07 2018-05-17 Hoya株式会社 フォトマスク、近接露光用フォトマスクの製造方法、及び、表示装置の製造方法
JP2018116088A (ja) 2017-01-16 2018-07-26 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308741A (en) * 1992-07-31 1994-05-03 Motorola, Inc. Lithographic method using double exposure techniques, mask position shifting and light phase shifting
JPH11271958A (ja) * 1998-02-06 1999-10-08 Internatl Business Mach Corp <Ibm> 高解像フォトマスクおよびその製造方法
KR100553069B1 (ko) * 1999-11-08 2006-02-15 마츠시타 덴끼 산교 가부시키가이샤 포토마스크 및 포토마스크의 작성방법
US6905899B2 (en) * 2003-09-23 2005-06-14 Macronix International Co., Ltd. Methods for forming a photoresist pattern using an anti-optical proximity effect
JP4697960B2 (ja) * 2004-12-21 2011-06-08 大日本印刷株式会社 パターンニング方法とこれに用いられる近接露光用の原版マスク
JP5897498B2 (ja) * 2012-04-27 2016-03-30 富士フイルム株式会社 光学材料用永久膜の製造方法、有機ｅｌ表示装置の製造方法および液晶表示装置の製造方法
JP6089604B2 (ja) 2012-11-06 2017-03-08 大日本印刷株式会社 位相シフトマスクの製造方法
JP6522277B2 (ja) * 2013-11-19 2019-05-29 Hoya株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP6557638B2 (ja) 2016-07-06 2019-08-07 株式会社エスケーエレクトロニクス ハーフトーンマスクおよびハーフトーンマスクブランクス
US10394114B2 (en) * 2016-08-25 2019-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Chromeless phase shift mask structure and process

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008122698A (ja) 2006-11-13 2008-05-29 Dainippon Printing Co Ltd プロキシミティ露光用階調マスク
WO2014111983A1 (ja) 2013-01-21 2014-07-24 パナソニック株式会社 フォトマスク及びそれを用いたパターン形成方法
JP2014191323A (ja) 2013-03-28 2014-10-06 Toppan Printing Co Ltd プロキシミティ露光用フォトマスクおよびそれを用いるパターン露光方法
JP2017062462A (ja) 2015-09-26 2017-03-30 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP2018077266A (ja) 2016-11-07 2018-05-17 Hoya株式会社 フォトマスク、近接露光用フォトマスクの製造方法、及び、表示装置の製造方法
JP2018116088A (ja) 2017-01-16 2018-07-26 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法

Also Published As

Publication number Publication date
KR20200045408A (ko) 2020-05-04
TW202132904A (zh) 2021-09-01
TWI787548B (zh) 2022-12-21
TWI821625B (zh) 2023-11-11
JP2020067661A (ja) 2020-04-30
CN111077725B (zh) 2023-10-27
TW202024775A (zh) 2020-07-01
CN111077725A (zh) 2020-04-28
KR102371333B1 (ko) 2022-03-04

Similar Documents

Publication Publication Date Title
TWI575305B (zh) 遮罩毛胚、相位移遮罩及其製造方法
JP5555789B2 (ja) フォトマスク及びその製造方法、並びにパターン転写方法
JP4968709B2 (ja) グレートーンマスクの製造方法
KR101071454B1 (ko) 포토마스크의 제조 방법, 패턴 전사 방법, 포토마스크 및데이터베이스
KR20170117988A (ko) 포토마스크 및 표시 장치의 제조 방법
JP2009053683A (ja) グレートーンマスクの製造方法及びグレートーンマスク、グレートーンマスクの検査方法、並びにパターン転写方法
JP4934236B2 (ja) グレートーンマスクブランク、グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
CN103676468A (zh) 光掩模及其制造方法、转印方法及平板显示器的制造方法
KR20110025232A (ko) 마스크 블랭크 및 포토마스크
KR101173731B1 (ko) 다계조 포토마스크 및 그 제조 방법
TWI422963B (zh) 多階調光罩及其製造方法、及圖案轉印方法
KR101065564B1 (ko) 포토마스크 정보의 취득 방법, 포토마스크의 품질 표시방법, 전자 디바이스의 제조 지원 방법, 전자 디바이스의제조 방법, 및 포토마스크 제품
TWI691783B (zh) 顯示裝置製造用光罩、及顯示裝置之製造方法
JP7372814B2 (ja) フォトマスク、フォトマスクの製造方法、および、電子デバイスの製造方法
TWI569090B (zh) 相位移遮罩及使用該相位移遮罩之抗蝕劑圖案形成方法
JP2012212125A (ja) フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP7355598B2 (ja) フォトマスク、電子デバイスの製造方法、および、フォトマスクの製造方法
KR101216849B1 (ko) 다계조 포토마스크의 제조 방법 및 다계조 포토마스크와 패턴 전사 방법
JP5185154B2 (ja) 多階調フォトマスクの検査方法
KR101343256B1 (ko) 포토마스크의 제조 방법, 패턴 전사 방법 및 표시 장치의 제조 방법
JP2011209759A (ja) ５階調フォトマスクの製造方法及びパターン転写方法
CN113406857A (zh) 光掩模以及显示装置的制造方法
JP4714312B2 (ja) 多階調フォトマスク及び多階調フォトマスクの製造方法

Legal Events

Date Code Title Description
AA64 Notification of invalidation of claim of internal priority (with term)

Free format text: JAPANESE INTERMEDIATE CODE: A241764

Effective date: 20191126

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220817

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220817

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230406

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230516

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230626

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230912

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230921

R150 Certificate of patent or registration of utility model

Ref document number: 7355598

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150