JP7355598B2 - フォトマスク、電子デバイスの製造方法、および、フォトマスクの製造方法 - Google Patents

フォトマスク、電子デバイスの製造方法、および、フォトマスクの製造方法 Download PDF

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Publication number
JP7355598B2
JP7355598B2 JP2019192029A JP2019192029A JP7355598B2 JP 7355598 B2 JP7355598 B2 JP 7355598B2 JP 2019192029 A JP2019192029 A JP 2019192029A JP 2019192029 A JP2019192029 A JP 2019192029A JP 7355598 B2 JP7355598 B2 JP 7355598B2
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Japan
Prior art keywords
photomask
transmission control
transfer
exposure
pattern
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JP2019192029A
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Japanese (ja)
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JP2020067661A (ja
JP2020067661A5 (ko
Inventor
周平 小林
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2019192029A 2018-10-22 2019-10-21 フォトマスク、電子デバイスの製造方法、および、フォトマスクの製造方法 Active JP7355598B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018198733 2018-10-22
JP2018198733 2018-10-22

Publications (3)

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JP2020067661A JP2020067661A (ja) 2020-04-30
JP2020067661A5 JP2020067661A5 (ko) 2022-08-29
JP7355598B2 true JP7355598B2 (ja) 2023-10-03

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JP2019192029A Active JP7355598B2 (ja) 2018-10-22 2019-10-21 フォトマスク、電子デバイスの製造方法、および、フォトマスクの製造方法

Country Status (4)

Country Link
JP (1) JP7355598B2 (ko)
KR (1) KR102371333B1 (ko)
CN (1) CN111077725B (ko)
TW (2) TWI821625B (ko)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008122698A (ja) 2006-11-13 2008-05-29 Dainippon Printing Co Ltd プロキシミティ露光用階調マスク
WO2014111983A1 (ja) 2013-01-21 2014-07-24 パナソニック株式会社 フォトマスク及びそれを用いたパターン形成方法
JP2014191323A (ja) 2013-03-28 2014-10-06 Toppan Printing Co Ltd プロキシミティ露光用フォトマスクおよびそれを用いるパターン露光方法
JP2017062462A (ja) 2015-09-26 2017-03-30 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP2018077266A (ja) 2016-11-07 2018-05-17 Hoya株式会社 フォトマスク、近接露光用フォトマスクの製造方法、及び、表示装置の製造方法
JP2018116088A (ja) 2017-01-16 2018-07-26 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308741A (en) * 1992-07-31 1994-05-03 Motorola, Inc. Lithographic method using double exposure techniques, mask position shifting and light phase shifting
JPH11271958A (ja) * 1998-02-06 1999-10-08 Internatl Business Mach Corp <Ibm> 高解像フォトマスクおよびその製造方法
DE60020163T2 (de) * 1999-11-08 2005-10-20 Matsushita Electric Industrial Co., Ltd., Kadoma Fotomaske, verfahren zu ihrer herstellung
US6905899B2 (en) 2003-09-23 2005-06-14 Macronix International Co., Ltd. Methods for forming a photoresist pattern using an anti-optical proximity effect
JP4697960B2 (ja) 2004-12-21 2011-06-08 大日本印刷株式会社 パターンニング方法とこれに用いられる近接露光用の原版マスク
JP5897498B2 (ja) * 2012-04-27 2016-03-30 富士フイルム株式会社 光学材料用永久膜の製造方法、有機ｅｌ表示装置の製造方法および液晶表示装置の製造方法
JP6089604B2 (ja) 2012-11-06 2017-03-08 大日本印刷株式会社 位相シフトマスクの製造方法
JP6522277B2 (ja) * 2013-11-19 2019-05-29 Hoya株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP6557638B2 (ja) 2016-07-06 2019-08-07 株式会社エスケーエレクトロニクス ハーフトーンマスクおよびハーフトーンマスクブランクス
US10394114B2 (en) * 2016-08-25 2019-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Chromeless phase shift mask structure and process

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008122698A (ja) 2006-11-13 2008-05-29 Dainippon Printing Co Ltd プロキシミティ露光用階調マスク
WO2014111983A1 (ja) 2013-01-21 2014-07-24 パナソニック株式会社 フォトマスク及びそれを用いたパターン形成方法
JP2014191323A (ja) 2013-03-28 2014-10-06 Toppan Printing Co Ltd プロキシミティ露光用フォトマスクおよびそれを用いるパターン露光方法
JP2017062462A (ja) 2015-09-26 2017-03-30 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP2018077266A (ja) 2016-11-07 2018-05-17 Hoya株式会社 フォトマスク、近接露光用フォトマスクの製造方法、及び、表示装置の製造方法
JP2018116088A (ja) 2017-01-16 2018-07-26 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法

Also Published As

Publication number Publication date
TW202132904A (zh) 2021-09-01
TWI787548B (zh) 2022-12-21
CN111077725A (zh) 2020-04-28
CN111077725B (zh) 2023-10-27
JP2020067661A (ja) 2020-04-30
TWI821625B (zh) 2023-11-11
TW202024775A (zh) 2020-07-01
KR20200045408A (ko) 2020-05-04
KR102371333B1 (ko) 2022-03-04

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