JP7350753B2 - 撮像装置および電子機器 - Google Patents

撮像装置および電子機器 Download PDF

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Publication number
JP7350753B2
JP7350753B2 JP2020540870A JP2020540870A JP7350753B2 JP 7350753 B2 JP7350753 B2 JP 7350753B2 JP 2020540870 A JP2020540870 A JP 2020540870A JP 2020540870 A JP2020540870 A JP 2020540870A JP 7350753 B2 JP7350753 B2 JP 7350753B2
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transistor
layer
electrode
light emitting
source
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Japanese (ja)
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JPWO2020049398A1 (ja
JPWO2020049398A5 (https=
Inventor
舜平 山崎
哲史 瀬尾
紘慈 楠
隆之 池田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/198—Contact-type image sensors [CIS]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2020540870A 2018-09-07 2019-08-26 撮像装置および電子機器 Active JP7350753B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018167669 2018-09-07
JP2018167669 2018-09-07
PCT/IB2019/057137 WO2020049398A1 (ja) 2018-09-07 2019-08-26 撮像装置および電子機器

Publications (3)

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JPWO2020049398A1 JPWO2020049398A1 (ja) 2021-09-24
JPWO2020049398A5 JPWO2020049398A5 (https=) 2022-08-15
JP7350753B2 true JP7350753B2 (ja) 2023-09-26

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US (1) US20210351224A1 (https=)
JP (1) JP7350753B2 (https=)
CN (1) CN112640107A (https=)
WO (1) WO2020049398A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101422362B1 (ko) 2009-07-10 2014-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 패널 및 전자 기기
WO2021009638A1 (ja) 2019-07-17 2021-01-21 株式会社半導体エネルギー研究所 表示装置
WO2021024070A1 (ja) 2019-08-02 2021-02-11 株式会社半導体エネルギー研究所 機能パネル、表示装置、入出力装置、情報処理装置
JPWO2021111227A1 (https=) 2019-12-02 2021-06-10
WO2022076894A1 (en) 2020-10-08 2022-04-14 Avicenatech Corp. Integration of oe devices with ics
KR102632064B1 (ko) * 2022-01-19 2024-01-31 연세대학교 산학협력단 Spad 어레이를 이용하는 이미지 센서

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002268615A (ja) 2000-12-14 2002-09-20 Semiconductor Energy Lab Co Ltd 半導体装置
JP2004349907A (ja) 2003-05-21 2004-12-09 Minolta Co Ltd 固体撮像装置
JP2007081203A (ja) 2005-09-15 2007-03-29 Fujifilm Corp エリアセンサ、画像入力装置、およびそれを組み込んだ電子写真装置等
JP2010153449A (ja) 2008-12-24 2010-07-08 Seiko Epson Corp 光源一体型光電変換装置
JP2012256020A (ja) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
JP2013073965A (ja) 2011-09-26 2013-04-22 Toshiba Corp 光電変換装置及びその製造方法
JP2015005280A (ja) 2013-05-20 2015-01-08 株式会社半導体エネルギー研究所 撮像パネル、撮像装置
JP2015039165A (ja) 2013-07-19 2015-02-26 株式会社半導体エネルギー研究所 固体撮像装置、半導体表示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104393007A (zh) * 2009-11-06 2015-03-04 株式会社半导体能源研究所 半导体装置
KR102205856B1 (ko) * 2014-06-11 2021-01-21 삼성디스플레이 주식회사 센서를 포함하는 유기 발광 표시 장치
TWI713367B (zh) * 2015-07-07 2020-12-11 日商半導體能源研究所股份有限公司 成像裝置及其運作方法
KR102456530B1 (ko) * 2015-09-09 2022-10-20 삼성전자주식회사 이미지 센서
US10896923B2 (en) * 2015-09-18 2021-01-19 Semiconductor Energy Laboratory Co., Ltd. Method of operating an imaging device with global shutter system
CN109509767B (zh) * 2017-09-15 2024-07-12 京东方科技集团股份有限公司 一种显示面板及显示装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002268615A (ja) 2000-12-14 2002-09-20 Semiconductor Energy Lab Co Ltd 半導体装置
JP2004349907A (ja) 2003-05-21 2004-12-09 Minolta Co Ltd 固体撮像装置
JP2007081203A (ja) 2005-09-15 2007-03-29 Fujifilm Corp エリアセンサ、画像入力装置、およびそれを組み込んだ電子写真装置等
JP2010153449A (ja) 2008-12-24 2010-07-08 Seiko Epson Corp 光源一体型光電変換装置
JP2012256020A (ja) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
JP2013073965A (ja) 2011-09-26 2013-04-22 Toshiba Corp 光電変換装置及びその製造方法
JP2015005280A (ja) 2013-05-20 2015-01-08 株式会社半導体エネルギー研究所 撮像パネル、撮像装置
JP2015039165A (ja) 2013-07-19 2015-02-26 株式会社半導体エネルギー研究所 固体撮像装置、半導体表示装置

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US20210351224A1 (en) 2021-11-11
CN112640107A (zh) 2021-04-09
JPWO2020049398A1 (ja) 2021-09-24
WO2020049398A1 (ja) 2020-03-12

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